专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

101. 发明申请

US20110201161A1 METHOD OF FORMING A BURIED PLATE BY ION IMPLANTATION 失效
标题翻译：通过离子植入形成板坯的方法
公开(公告)号：US20110201161A1
公开(公告)日：2011-08-18
申请号：US12705768
申请日：2010-02-15
申请人： Joseph Ervin , Geng Wang
发明人： Joseph Ervin , Geng Wang
IPC分类号： H01L21/02 , H01L21/336
CPC分类号： H01L21/84 , H01L21/2652 , H01L27/1087 , H01L27/1203 , H01L29/66181 , H01L29/78 , H01L29/945
摘要： A mask layer formed over a semiconductor substrate is lithographically patterned to form an opening therein. Ions are implanted at an angle that is normal to the surface of the semiconductor substrate through the opening and into an upper portion of the semiconductor substrate. Straggle of the implanted ions form a doped region that laterally extends beyond a horizontal cross-sectional area of the opening. A deep trench is formed by performing an anisotropic etch of a semiconductor material underneath the opening to a depth above a deep end of an implanted region. Ion implantation steps and anisotropic etch steps are alternately employed to extend the depth of the doped region and the depth of the deep trench, thereby forming a doped region around a deep trench that has narrow lateral dimensions. The doped region can be employed as a buried plate for a deep trench capacitor.
摘要翻译：在半导体衬底上形成的掩模层被光刻图案化以在其中形成开口。离子以与半导体衬底的表面垂直的角度通过开口注入并进入半导体衬底的上部。注入离子的束缚形成横向延伸超过开口的水平横截面积的掺杂区域。通过对开口下方的半导体材料进行向注入区域的深端上方的深度的各向异性蚀刻来形成深沟槽。交替使用离子注入步骤和各向异性蚀刻步骤来扩展掺杂区域的深度和深沟槽的深度，从而在具有窄横向尺寸的深沟槽周围形成掺杂区域。掺杂区域可以用作深沟槽电容器的掩埋板。

102. 发明申请

US20110193193A1 STRUCTURE AND METHOD FOR FORMING ISOLATION AND BURIED PLATE FOR TRENCH CAPACITOR 有权
标题翻译：用于形成用于TRENCH电容器的隔离和平板的结构和方法
公开(公告)号：US20110193193A1
公开(公告)日：2011-08-11
申请号：US12704084
申请日：2010-02-11
申请人： Abhishek Dube , Subramanian S. Iyer , Babar Ali Khan , Oh-jung Kwon , Junedong Lee , Paul C. Parries , Chengwen Pei , Gerd Pfeiffer , Ravi M. Todi , Geng Wang
发明人： Abhishek Dube , Subramanian S. Iyer , Babar Ali Khan , Oh-jung Kwon , Junedong Lee , Paul C. Parries , Chengwen Pei , Gerd Pfeiffer , Ravi M. Todi , Geng Wang
IPC分类号： H01L29/94 , H01L21/02
CPC分类号： H01L29/945 , H01L21/76229 , H01L21/84 , H01L29/66181
摘要： A structure and method for forming isolation and a buried plate for a trench capacitor is disclosed. Embodiments of the structure comprise an epitaxial layer serving as the buried plate, and a bounded deep trench isolation area serving to isolate one or more deep trench structures. Embodiments of the method comprise angular implanting of the deep trench isolation area to form a P region at the base of the deep trench isolation area that serves as an anti-punch through implant.
摘要翻译：公开了用于形成隔离的结构和方法以及用于沟槽电容器的掩埋板。该结构的实施例包括用作掩埋板的外延层和用于隔离一个或多个深沟槽结构的有界深沟槽隔离区域。该方法的实施例包括深沟槽隔离区域的角度注入，以在用作抗穿孔植入物的深沟槽隔离区域的底部形成P区。

103. 发明申请

US20110023071A1 Method, System, and Apparatus for Creating Content-on-Demand Service 有权
标题翻译：用于创建内容点播服务的方法，系统和设备
公开(公告)号：US20110023071A1
公开(公告)日：2011-01-27
申请号：US12892608
申请日：2010-09-28
申请人： Jincheng Li , Dongming Zhu , Jianfeng Zhong , Geng Wang , Xiao Wang , Shumin Cheng
发明人： Jincheng Li , Dongming Zhu , Jianfeng Zhong , Geng Wang , Xiao Wang , Shumin Cheng
IPC分类号： H04N7/173 , G06F15/16
CPC分类号： H04L65/1033 , H04L65/1016 , H04L65/1069 , H04L65/4084 , H04L65/608
摘要： A method, a system, and an apparatus for creating a Content-on-Demand (CoD) service are disclosed herein. The method includes receiving a Session Initiation Protocol (SIP) service request sent by a User Equipment (UE); converting the SIP service request into a Real-Time Streaming Protocol (RTSP) service request, and sending the RTSP service request to a server; receiving an RTSP service response sent by the server; and converting the RTSP service response into a SIP service response, and sending the SIP service response to the UE to create the CoD service between the UE and the server.
摘要翻译：本文公开了一种用于创建内容点播（CoD）服务的方法，系统和装置。该方法包括接收由用户设备（UE）发送的会话发起协议（SIP）服务请求; 将SIP服务请求转换为实时流协议（RTSP）服务请求，并将RTSP服务请求发送到服务器; 接收由服务器发送的RTSP服务响应; 并将RTSP服务响应转换成SIP服务响应，并向UE发送SIP服务响应以在UE与服务器之间创建CoD服务。

104. 发明授权

US07262451B2 High performance embedded DRAM technology with strained silicon 失效
标题翻译：具有应变硅的高性能嵌入式DRAM技术
公开(公告)号：US07262451B2
公开(公告)日：2007-08-28
申请号：US10541660
申请日：2003-01-08
申请人： Jack A. Mandelman , Jeffrey P. Gambino , Geng Wang
发明人： Jack A. Mandelman , Jeffrey P. Gambino , Geng Wang
IPC分类号： H01L27/108
CPC分类号： H01L27/10894 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L21/3081 , H01L27/10864
摘要： Semiconductor devices are fabricated in a strained layer region and strained layer-free region of the same substrate. A first semiconductor device, such as a memory cell, e.g. a deep trench storage cell, is formed in a strained layer-free region of the substrate. A strained layer region is selectively formed in the same substrate. A second semiconductor device (66, 68, 70), such as an FET, e.g. an MOSFET logic device, is formed in the strained layer region.
摘要翻译：半导体器件制造在同一衬底的应变层区域和无应变层的层中。第一半导体器件，例如存储器单元，例如在衬底的无应变层的区域中形成深沟槽存储单元。在相同的衬底中选择性地形成应变层区域。第二半导体器件（66,68,70），例如FET，例如，一个MOSFET逻辑器件，形成在应变层区域中。

105. 发明授权

US07212000B2 Detection of a defective disk of a hard disk drive 失效
标题翻译：检测硬盘驱动器的故障磁盘
公开(公告)号：US07212000B2
公开(公告)日：2007-05-01
申请号：US10698866
申请日：2003-10-30
申请人： Geng Wang , Sang Lee
发明人： Geng Wang , Sang Lee
IPC分类号： G01B7/00
CPC分类号： G11B27/36 , G11B20/1816 , G11B2220/2516
摘要： A method and apparatus for detecting a defective disk for a hard disk drive. The method includes placing a disk into a tester so that a first side of the disk is adjacent to a first head of the tester and a second side of the disk is adjacent to a second head. First data is read from the first side of the disk, and second data is read from the second side of the disk. The disk is then flipped so that the second side is adjacent to the first head and the first side is adjacent to the second head. Third data is read from the first side. Fourth data is read from the second side. A first area between a curve generated from the first data and a curve generated from the third data is calculated. Likewise, a second area is calculated between a curve generated from the second data and a curve generated from the fourth data. An average of the first and second areas is then calculated and used to detect a defective disk.
摘要翻译：一种用于检测用于硬盘驱动器的有缺陷的盘的方法和装置。该方法包括将盘放入测试器中，使得盘的第一侧与测试器的第一头相邻，并且盘的第二侧与第二头相邻。从盘的第一侧读取第一数据，从盘的第二侧读取第二数据。然后将盘翻转，使得第二侧与第一头相邻，并且第一侧与第二头相邻。从第一侧读取第三数据。从第二侧读取第四数据。计算从第一数据生成的曲线与从第三数据生成的曲线之间的第一区域。类似地，在从第二数据产生的曲线和从第四数据生成的曲线之间计算第二区域。然后计算第一和第二区域的平均值，并用于检测有缺陷的盘。

106. 发明申请

US20070051996A1 METHOD OF FORMING A MOSFET WITH DUAL WORK FUNCTION MATERIALS 有权
标题翻译：形成具有双功能功能材料的MOSFET的方法
公开(公告)号：US20070051996A1
公开(公告)日：2007-03-08
申请号：US11553072
申请日：2006-10-26
申请人： Xiangdong Chen , Geng Wang , Yujun Li , Qiqing Ouyang
发明人： Xiangdong Chen , Geng Wang , Yujun Li , Qiqing Ouyang
IPC分类号： H01L29/94
CPC分类号： H01L29/66181 , H01L27/10864
摘要： A vertical pass transistor used in a DRAM cell for maintaining a low total leakage current and providing adequate drive current is described together with a method of fabricating such a device. The transistor gate is engineered in lieu of the channel. The vertical pass transistor for the DRAM cell incorporates two gate materials having different work functions. The gate material near the storage node is n-type doped polysilicon. The gate material near the bit line diffusion is made of silicide or metal having a higher work function than the n-polysilicon. The novel device structure shows several advantages: the channel doping is reduced while maintaining a high Vt and a low sub-threshold leakage current; the carrier mobility improves with the reduced channel doping; the body effect of the device is reduced which improves the write back current; and the sub-threshold swing is reduced because of the low channel doping.
摘要翻译：在DRAM单元中使用的用于保持低总漏电流并提供足够的驱动电流的垂直传输晶体管与制造这种器件的方法一起被描述。晶体管栅极被设计代替通道。用于DRAM单元的垂直传输晶体管包括具有不同功函数的两个栅极材料。存储节点附近的栅极材料为n型掺杂多晶硅。位线扩散附近的栅极材料由具有比n-多晶硅更高的功函数的硅化物或金属制成。该新颖的器件结构显示出几个优点：沟道掺杂减少，同时保持高Vt和低的亚阈值漏电流; 载流子迁移率随着沟道掺杂的降低而提高; 减少了器件的体效，提高了回写电流; 并且由于低通道掺杂，子阈值摆幅减小。

107. 发明申请

US20060258060A1 Gate controlled floating well vertical MOSFET 审中-公开
标题翻译：门控浮动阱垂直MOSFET
公开(公告)号：US20060258060A1
公开(公告)日：2006-11-16
申请号：US11487809
申请日：2006-07-17
申请人： Xiangdong Chen , Dureseti Chidambarrao , Geng Wang
发明人： Xiangdong Chen , Dureseti Chidambarrao , Geng Wang
IPC分类号： H01L21/339
CPC分类号： H01L27/10864 , H01L27/0214 , H01L27/10841
摘要： A novel transistor structure for a DRAM cell includes two deep trenches, one trench including a vertical storage cell for storing the data and the second trench including a vertical control cell for controlling the p-well voltage, which, in effect, places part of the p-well in a floating condition thus decreasing the threshold voltage as compared to when the vertical pass transistor is in an off-state. This enables the transistor to exhibit increased gate over-drive and drive current during an active wordline voltage commonly applied to both gates of the storage and control cells.
摘要翻译：用于DRAM单元的新型晶体管结构包括两个深沟槽，一个沟槽包括用于存储数据的垂直存储单元，第二沟槽包括用于控制p阱电压的垂直控制单元，其实际上将部分 p阱处于浮置状态，从而与垂直传输晶体管处于截止状态时相比降低阈值电压。这使得晶体管在通常施加到存储和控制单元的两个门的有效字线电压期间表现出增加的栅极过驱动和驱动电流。

108. 发明授权

US07089649B2 Method of estimating a thermal pole tip protrusion for a head gimbal assembly 失效
标题翻译：估计头部万向节组件的热极尖突起的方法
公开(公告)号：US07089649B2
公开(公告)日：2006-08-15
申请号：US10256553
申请日：2002-09-26
申请人： Geng Wang , Hae Jung Lee , Keung Youn Cho , Sang Lee
发明人： Geng Wang , Hae Jung Lee , Keung Youn Cho , Sang Lee
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3136 , G11B5/012 , G11B5/455 , G11B5/4806 , G11B5/4833 , G11B5/484 , Y10T29/49025 , Y10T29/49027 , Y10T29/49028 , Y10T29/49032 , Y10T29/49036
摘要： Thermal pole tip protrusion is caused by materials in and around head slider expanding during write operations till they protrude, leading to contact with the rotating disk surface, altering the flying height and often wearing down part of the disk surface. While well known that read-write heads expand during writing, the inventors who recognized this situation's significance, particularly as flying height decreases and data rates increase, both required for high areal density disk drives. The inventors realized that they could detect the problem at the spin stand level by testing head gimbal assemblies to reliably, and inexpensively, predict the tendency for thermal pole tip protrusion. This leads to selection of head gimbal assemblies, which do not have the thermal pole tip protrusion tendency. The selected head gimbal assemblies have better reliability, as do actuators and disk drives made with the selected head gimbal assemblies.
摘要翻译：热敏头尖突起由写入操作期间头部滑块内和周围的材料引起，直到它们突出，导致与旋转盘表面接触，改变飞行高度并经常磨损盘表面的一部分。虽然众所周知，读写头在写入期间扩展，但是认识到这种情况的重要性的发明人，特别是当高密度磁盘驱动器都需要飞行高度降低和数据速率增加时。本发明人意识到，它们可以通过测试头万向架组件可靠且廉价地预测热极尖端突起的趋势来检测旋转台水平的问题。这导致了不具有热极尖突起倾向的头万向节组件的选择。所选择的头万向架组件具有更好的可靠性，与使用所选择的头万向架组件制造的致动器和磁盘驱动器一样。

109. 发明申请

US20060024877A1 High performance embedded dram technology with strained silicon 失效
标题翻译：具有应变硅的高性能嵌入式显示技术
公开(公告)号：US20060024877A1
公开(公告)日：2006-02-02
申请号：US10541660
申请日：2003-01-08
申请人： Jack Mandelman , Jeffrey Gambino , Geng Wang
发明人： Jack Mandelman , Jeffrey Gambino , Geng Wang
IPC分类号： H01L21/8238
CPC分类号： H01L27/10894 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L21/3081 , H01L27/10864
摘要： Semiconductor devices are fabricated in a strained layer region and strained layer-free region of the same substrate. A first semiconductor device, such as a memory cell, e.g. a deep trench storage cell, is formed in a strained layer-free region of the substrate. A strained layer region is selectively formed in the same substrate. A second semiconductor device (66, 68, 70), such as an FET, e.g. an MOSFET logic device, is formed in the strained layer region.
摘要翻译：半导体器件制造在同一衬底的应变层区域和无应变层的层中。第一半导体器件，例如存储器单元，例如在衬底的无应变层的区域中形成深沟槽存储单元。在相同的衬底中选择性地形成应变层区域。第二半导体器件（66,68,70），例如FET，例如，一个MOSFET逻辑器件，形成在应变层区域中。

110. 发明授权

US09898177B2 Display processing method and portable mobile terminal 有权
公开(公告)号：US09898177B2
公开(公告)日：2018-02-20
申请号：US13824832
申请日：2011-09-21
申请人： Geng Wang , Ran Sun
发明人： Geng Wang , Ran Sun
IPC分类号： G06F3/00 , G06F3/0484 , G06F3/0482 , G06F3/0488
CPC分类号： G06F3/04845 , G06F3/0482 , G06F3/04842 , G06F3/04883 , G06F2203/04104
摘要： A display processing method that is applied in a portable mobile terminal, to display multiple objects on a touch screen of the portable mobile terminal. The method includes obtaining a touch point that is a point created when an operating object contacts/almost touches the touch screen; determining a preset area with the touch point being the center; determining a first object and a second object, among multiple objects, each intersecting with the preset area on at least one point; determining a first information of the movement of the first object, the first information indicating moving the first object from a first position to a second position, the first position being the original position of the first object displayed on the touch screen; and moving the first object from the first position to the second position according to the first information.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式