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1. 发明授权

US09898177B2 Display processing method and portable mobile terminal 有权
公开(公告)号：US09898177B2
公开(公告)日：2018-02-20
申请号：US13824832
申请日：2011-09-21
申请人： Geng Wang , Ran Sun
发明人： Geng Wang , Ran Sun
IPC分类号： G06F3/00 , G06F3/0484 , G06F3/0482 , G06F3/0488
CPC分类号： G06F3/04845 , G06F3/0482 , G06F3/04842 , G06F3/04883 , G06F2203/04104
摘要： A display processing method that is applied in a portable mobile terminal, to display multiple objects on a touch screen of the portable mobile terminal. The method includes obtaining a touch point that is a point created when an operating object contacts/almost touches the touch screen; determining a preset area with the touch point being the center; determining a first object and a second object, among multiple objects, each intersecting with the preset area on at least one point; determining a first information of the movement of the first object, the first information indicating moving the first object from a first position to a second position, the first position being the original position of the first object displayed on the touch screen; and moving the first object from the first position to the second position according to the first information.

2. 发明申请

US20160188178A1 Display Processing Method And Portable Mobile Terminal 有权
标题翻译：显示处理方法和便携式移动终端
公开(公告)号：US20160188178A1
公开(公告)日：2016-06-30
申请号：US13824832
申请日：2011-09-21
申请人： Geng Wang , Ran Sun
发明人： Geng Wang , Ran Sun
IPC分类号： G06F3/0484 , G06T7/00 , G06F3/0482 , G06F3/0488
CPC分类号： G06F3/04845 , G06F3/0482 , G06F3/04842 , G06F3/04883 , G06F2203/04104
摘要： A display processing method that is applied in a portable mobile terminal, to display multiple objects on a touch screen of the portable mobile terminal. The method includes obtaining a touch point that is a point created when an operating object contacts/almost touches the touch screen; determining a preset area with the touch point being the center; determining a first object and a second object, among multiple objects, each intersecting with the preset area on at least one point; determining a first information of the movement of the first object, the first information indicating moving the first object from a first position to a second position, the first position being the original position of the first object displayed on the touch screen; and moving the first object from the first position to the second position according to the first information.
摘要翻译：一种应用于便携式移动终端中的显示处理方法，用于在便携式移动终端的触摸屏上显示多个对象。该方法包括获得触摸点，该触摸点是当操作对象接触/几乎触摸触摸屏时创建的点; 以触摸点为中心确定预设区域; 确定在多个对象中的第一对象和第二对象，每个对象至少在一个点上与预设区域相交; 确定所述第一对象的移动的第一信息，所述第一信息指示将所述第一对象从第一位置移动到第二位置，所述第一位置是在所述触摸屏上显示的所述第一对象的原始位置; 以及根据第一信息将第一物体从第一位置移动到第二位置。

3. 发明申请

US20130185673A1 Electronic Device, Displaying Method And File Saving Method 有权
标题翻译：电子设备，显示方式和文件保存方法
公开(公告)号：US20130185673A1
公开(公告)日：2013-07-18
申请号：US13824144
申请日：2011-09-27
申请人： Ming Cai , Ran Sun , Geng Wang
发明人： Ming Cai , Ran Sun , Geng Wang
IPC分类号： G06F3/0481
CPC分类号： G06F3/0481 , G01C21/36 , G06F3/04815
摘要： An electronic device, a displaying method and a file saving method are described. The electronic device is in a first state and has a display area. The displaying method includes obtaining an image; obtaining an information entry; displaying the image in the display area; and displaying a first type information entry from the information entry in a first region of the display area with a first display effect, and displaying a second type information entry from the information entry in a second region of the display area with a second display effect; wherein the first type information entry is different from the second type information entry.
摘要翻译：描述电子设备，显示方法和文件保存方法。电子设备处于第一状态并具有显示区域。显示方法包括获得图像; 获取信息条目; 在显示区域显示图像; 从所述显示区域的第一区域中的所述信息条目中显示第一类型信息条目，并且具有第二显示效果，在所述显示区域的第二区域中从所述信息条目显示第二类型信息条目; 其中所述第一类型信息条目与所述第二类型信息条目不同。

4. 发明授权

US09507485B2 Electronic device, displaying method and file saving method 有权
标题翻译：电子设备，显示方法和文件保存方法
公开(公告)号：US09507485B2
公开(公告)日：2016-11-29
申请号：US13824144
申请日：2011-09-27
申请人： Ming Cai , Ran Sun , Geng Wang
发明人： Ming Cai , Ran Sun , Geng Wang
IPC分类号： G09G5/14 , G06F3/0481 , G01C21/36
CPC分类号： G06F3/0481 , G01C21/36 , G06F3/04815
摘要： An electronic device, a displaying method and a file saving method are described. The electronic device is in a first state and has a display area. The displaying method includes obtaining an image; obtaining an information entry; displaying the image in the display area; and displaying a first type information entry from the information entry in a first region of the display area with a first display effect, and displaying a second type information entry from the information entry in a second region of the display area with a second display effect; wherein the first type information entry is different from the second type information entry.
摘要翻译：描述电子设备，显示方法和文件保存方法。电子设备处于第一状态并具有显示区域。显示方法包括获得图像; 获取信息条目; 在显示区域显示图像; 从所述显示区域的第一区域中的所述信息条目中显示第一类型信息条目，并且具有第二显示效果，在所述显示区域的第二区域中从所述信息条目显示第二类型信息条目; 其中所述第一类型信息条目与所述第二类型信息条目不同。

5. 发明授权

US09064745B2 Sublithographic width finFET employing solid phase epitaxy 有权
标题翻译：使用固相外延的亚光刻宽度finFET
公开(公告)号：US09064745B2
公开(公告)日：2015-06-23
申请号：US13597752
申请日：2012-08-29
申请人： Chengwen Pei , Kangguo Cheng , Joseph Ervin , Juntao Li , Ravi M. Todi , Geng Wang
发明人： Chengwen Pei , Kangguo Cheng , Joseph Ervin , Juntao Li , Ravi M. Todi , Geng Wang
IPC分类号： H01L21/336 , H01L27/12 , H01L21/8238 , H01L21/84 , H01L29/66 , H01L27/092
CPC分类号： H01L27/0886 , H01L21/823821 , H01L21/845 , H01L27/0924 , H01L27/1211 , H01L29/0653 , H01L29/0657 , H01L29/0692 , H01L29/66795
摘要： A dielectric mandrel structure is formed on a single crystalline semiconductor layer. An amorphous semiconductor material layer is deposited on the physically exposed surfaces of the single crystalline semiconductor layer and surfaces of the mandrel structure. Optionally, the amorphous semiconductor material layer can be implanted with at least one different semiconductor material. Solid phase epitaxy is performed on the amorphous semiconductor material layer employing the single crystalline semiconductor layer as a seed layer, thereby forming an epitaxial semiconductor material layer with uniform thickness. Remaining portions of the epitaxial semiconductor material layer are single crystalline semiconductor fins and thickness of these fins are sublithographic. After removal of the dielectric mandrel structure, the single crystalline semiconductor fins can be employed to form a semiconductor device.
摘要翻译：介电心轴结构形成在单晶半导体层上。非晶半导体材料层沉积在单晶半导体层的物理暴露表面和心轴结构的表面上。可选地，非晶半导体材料层可以注入至少一种不同的半导体材料。在采用单晶半导体层作为种子层的非晶半导体材料层上进行固相外延，从而形成厚度均匀的外延半导体材料层。外延半导体材料层的剩余部分是单晶半导体鳍片，并且这些鳍片的厚度是亚光刻的。在去除介电心轴结构之后，可以采用单晶半导体鳍形成半导体器件。

6. 发明授权

US08962423B2 Multilayer MIM capacitor 有权
标题翻译：多层MIM电容
公开(公告)号：US08962423B2
公开(公告)日：2015-02-24
申请号：US13352655
申请日：2012-01-18
申请人： Kangguo Cheng , Joseph Ervin , Chengwen Pei , Ravi M. Todi , Geng Wang
发明人： Kangguo Cheng , Joseph Ervin , Chengwen Pei , Ravi M. Todi , Geng Wang
IPC分类号： H01L21/8242
CPC分类号： H01L28/40 , H01L21/32134 , H01L28/86 , H01L28/90 , H01L28/91
摘要： An improved semiconductor capacitor and method of fabrication is disclosed. A MIM stack, comprising alternating first-type and second-type metal layers (each separated by dielectric) is formed in a deep cavity. The entire stack can be planarized, and then patterned to expose a first area, and selectively etched to recess all first metal layers within the first area. A second selective etch is performed to recess all second metal layers within a second area. The etched recesses can be backfilled with dielectric. Separate electrodes can be formed; a first electrode formed in said first area and contacting all of said second-type metal layers and none of said first-type metal layers, and a second electrode formed in said second area and contacting all of said first-type metal layers and none of said second-type metal layers.
摘要翻译：公开了一种改进的半导体电容器和制造方法。在深空腔中形成MIM叠层，其包括交替的第一和第二类型的金属层（各自被电介质隔开）。整个堆叠可以被平坦化，然后被图案化以暴露第一区域，并且被选择性地蚀刻以在第一区域内凹陷所有第一金属层。执行第二选择性蚀刻以在第二区域内凹陷所有第二金属层。蚀刻的凹槽可以用电介质回填。可以形成单独的电极; 第一电极，形成在所述第一区域中，并且与所有所述第二类型金属层和所述第一类型金属层接触，并且形成在所述第二区域中并与所有第一类金属层接触的第二电极，所述第二类金属层。

7. 发明授权

US08937345B2 Integrated circuits comprising an active transistor electrically connected to a trench capacitor by an overlying contact 有权
标题翻译：集成电路包括通过上覆触点与沟槽电容器电连接的有源晶体管
公开(公告)号：US08937345B2
公开(公告)日：2015-01-20
申请号：US13454635
申请日：2012-04-24
申请人： John E. Barth, Jr. , Kangguo Cheng , Michael Sperling , Geng Wang
发明人： John E. Barth, Jr. , Kangguo Cheng , Michael Sperling , Geng Wang
IPC分类号： H01L27/108 , H01L21/768 , H01L23/485
CPC分类号： H01L21/76895 , H01L23/485 , H01L27/10867 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit includes an active transistor laterally adjacent to a trench capacitor formed in a semiconductor substrate, the active transistor comprising a source junction and a drain junction, wherein a barrier layer is disposed along a periphery of the trench capacitor for isolating the trench capacitor; a passive transistor laterally spaced from the active transistor, wherein at least a portion of the trench capacitor is interposed between the active and passive transistors; an interlevel dielectric disposed upon the active and passive transistors; and a first conductive contact extending through the interlevel dielectric to the drain junction of the active transistor and the at least a portion of the trench capacitor between the active and passive transistors, wherein the first conductive contact electrically connects the trench capacitor to the drain junction of the active transistor.
摘要翻译：集成电路包括与形成在半导体衬底中的沟槽电容器横向相邻的有源晶体管，所述有源晶体管包括源极结和漏极结，其中阻挡层沿着所述沟槽电容器的外围设置以隔离所述沟槽电容器; 与有源晶体管横向隔开的无源晶体管，其中所述沟槽电容器的至少一部分插入在所述有源和无源晶体管之间; 布置在有源和无源晶体管上的层间电介质; 以及第一导电接触件，其延伸穿过所述有源晶体管的所述有源晶体管和所述沟槽电容器的所述至少一部分的所述层间电介质的漏极结到所述有源和无源晶体管之间，其中所述第一导电接触将所述沟槽电容器电连接到所述沟道电容器有源晶体管。

8. 发明授权

US08921198B2 Method and structure for forming a deep trench capacitor 有权
标题翻译：形成深沟槽电容器的方法和结构
公开(公告)号：US08921198B2
公开(公告)日：2014-12-30
申请号：US13428303
申请日：2012-03-23
申请人： Roger A. Booth, Jr. , Kangguo Cheng , Robert Hannon , Ravi M. Todi , Geng Wang
发明人： Roger A. Booth, Jr. , Kangguo Cheng , Robert Hannon , Ravi M. Todi , Geng Wang
IPC分类号： H01L29/02 , H01L29/66 , H01L29/94 , H01L27/07 , H01L27/12 , H01L49/02 , H01L27/06
CPC分类号： H01L29/945 , H01L27/0605 , H01L27/0733 , H01L27/1203 , H01L28/90 , H01L29/66181
摘要： A method of forming a deep trench capacitor includes providing a wafer. Devices are formed on a front side of the wafer. A through-silicon-via is formed on a substrate of the wafer. Deep trenches are formed on a back side of the wafer. A deep trench capacitor is formed in the deep trench. The through-silicon-via connects the deep trench capacitor to the devices.
摘要翻译：形成深沟槽电容器的方法包括提供晶片。器件形成在晶片的前侧。在晶片的基板上形成贯通硅通孔。深沟槽形成在晶片的背面。在深沟槽中形成深沟槽电容器。直通硅通孔将深沟槽电容器连接到器件。

9. 发明授权

US08853781B2 Rare-earth oxide isolated semiconductor fin 有权
标题翻译：稀土氧化物隔离半导体鳍片
公开(公告)号：US08853781B2
公开(公告)日：2014-10-07
申请号：US13328358
申请日：2011-12-16
申请人： Kangguo Cheng , Joseph Ervin , Chengwen Pei , Ravi M. Todi , Geng Wang
发明人： Kangguo Cheng , Joseph Ervin , Chengwen Pei , Ravi M. Todi , Geng Wang
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L21/02488 , H01L21/02513 , H01L21/02587 , H01L21/02598 , H01L21/02642 , H01L29/66795 , H01L29/785
摘要： A dielectric template layer is deposited on a substrate. Line trenches are formed within the dielectric template layer by an anisotropic etch that employs a patterned mask layer. The patterned mask layer can be a patterned photoresist layer, or a patterned hard mask layer that is formed by other image transfer methods. A lower portion of each line trench is filled with an epitaxial rare-earth oxide material by a selective rare-earth oxide epitaxy process. An upper portion of each line trench is filled with an epitaxial semiconductor material by a selective semiconductor epitaxy process. The dielectric template layer is recessed to form a dielectric material layer that provides lateral electrical isolation among fin structures, each of which includes a stack of a rare-earth oxide fin portion and a semiconductor fin portion.
摘要翻译：电介质模板层沉积在衬底上。通过使用图案化掩模层的各向异性蚀刻，在电介质模板层内形成线沟槽。图案化掩模层可以是图案化的光致抗蚀剂层，或者通过其它图像转印方法形成的图案化的硬掩模层。通过选择性稀土氧化物外延法，用外延稀土氧化物材料填充每个线沟槽的下部。通过选择性半导体外延工艺，用外延半导体材料填充每个线沟槽的上部。电介质模板层被凹入以形成介电材料层，该电介质材料层在散热片结构之间提供横向电隔离，其中每一个包括稀土氧化物翅片部分和半导体散热片部分的堆叠。

10. 发明授权

US08470684B2 Suppression of diffusion in epitaxial buried plate for deep trenches 失效
标题翻译：用于深沟槽的外延掩埋板中的扩散抑制
公开(公告)号：US08470684B2
公开(公告)日：2013-06-25
申请号：US13106349
申请日：2011-05-12
申请人： Chengwen Pei , Geng Wang
发明人： Chengwen Pei , Geng Wang
IPC分类号： H01L21/20
CPC分类号： H01L29/66181 , H01L21/2652 , H01L27/10829 , H01L27/10861 , H01L27/10897 , H01L29/945
摘要： Dopants of a first conductivity type are implanted into a top portion of a semiconductor substrate having a doping of the first conductivity type to increase the dopant concentration in the top portion, which is a first-conductivity-type semiconductor layer. A semiconductor material layer having a doping of the second conductivity type, a buried insulator layer, and a top semiconductor layer are formed thereupon. Deep trenches having a narrow width have a bottom surface within the second-conductivity-type semiconductor layer, which functions as a buried plate. Deep trenches having a wider width are etched into the first-conductivity-type layer underneath, and can be used to form an isolation structure. The additional dopants in the first-conductivity-type semiconductor layer provide a counterdoping against downward diffusion of dopants of the second conductivity type to enhance electrical isolation.
摘要翻译：将第一导电类型的掺杂剂注入到具有第一导电类型的掺杂的半导体衬底的顶部中，以增加作为第一导电型半导体层的顶部中的掺杂剂浓度。在其上形成具有第二导电类型的掺杂的半导体材料层，掩埋绝缘体层和顶部半导体层。具有窄宽度的深沟槽具有在第二导电型半导体层内的底表面，其用作掩埋板。具有较宽宽度的深沟槽被蚀刻到下面的第一导电类型层中，并且可用于形成隔离结构。第一导电型半导体层中的附加掺杂剂提供反向掺杂以抵抗第二导电类型的掺杂剂的向下扩散以增强电隔离。

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