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1. 发明申请

WO2015193421A3 PHASE DEPENDENT MULTIMODE INTERFERENCE DEVICE FOR COUPLED CAVITY LASERS 审中-公开
标题翻译：用于耦合孔隙激光器的相关多模干涉装置
公开(公告)号：WO2015193421A3
公开(公告)日：2016-03-17
申请号：PCT/EP2015063685
申请日：2015-06-18
申请人： UNIV EINDHOVEN TECH
发明人： D AGOSTINO DOMENICO , LENSTRA DAAN
IPC分类号： G02B6/28 , H01S5/50
CPC分类号： G02B6/2813 , G02B6/2817 , H01S5/1021 , H01S5/4068
摘要： A 3x3 multi-mode interference coupling device having a length L and a width W, a center input port between a pair of outer input ports, where each outer input port is displaced from the center input port by a distance W/3, and a center output port between a pair of outer output ports, where each outer output port is displaced from the center output port by a distance W/3, where the device is supports Cbar, Ccen and a Cx coupling coefficients therein, when the outer input ports are equally excited with an input signal having a 180° phase difference, Ccen from each outer input port destructively interferes when the propagation length L is an integer number of Lπ/2, where the device outputs equal intensity laser modes from each outer output port when the propagation length is an integer multiple of Lπ/2.
摘要翻译：具有长度L和宽度W的3×3多模式干涉耦合装置，一对外部输入端口之间的中心输入端口，其中每个外部输入端口从中心输入端口移位距离W / 3，以及中心输出端口在一对外部输出端口之间，其中每个外部输出端口从中心输出端口移位距离W / 3，其中该设备在其中支持Cbar，Ccen和Cx耦合系数，当外部输入端口由具有180°相位差的输入信号激发，当传播长度L为Lπ/ 2的整数时，每个外部输入端口的Ccen破坏性地干扰，其中该装置从每个外部输出端口输出相等强度的激光模式，当传播长度是Lπ/ 2的整数倍。

2. 发明申请

WO2015163965A3 MONOLITHIC TUNABLE TERAHERTZ RADIATION SOURCE USING NONLINEAR FREQUENCY MIXING IN QUANTUM CASCADE LASERS 审中-公开
标题翻译：利用量子级联激光非线性混频的单片可调谐TERAHERTZ辐射源
公开(公告)号：WO2015163965A3
公开(公告)日：2015-12-23
申请号：PCT/US2015014371
申请日：2015-02-04
申请人： UNIV TEXAS
发明人： BELKIN MIKHAIL , JUNG SEUNGYONG , VIJAYRAGHAVAN KARUN
IPC分类号： H01S5/20 , H01S5/34
CPC分类号： H01S5/0604 , G02F1/3534 , G02F2203/13 , H01S5/0207 , H01S5/0208 , H01S5/0422 , H01S5/06256 , H01S5/06258 , H01S5/1021 , H01S5/1092 , H01S5/12 , H01S5/125 , H01S5/3401 , H01S5/34306
摘要： A terahertz difference-frequency generation quantum cascade laser source that provides monolithic, electrically-controlled tunable terahertz emission. The quantum cascade laser includes a substrate, a lower cladding layer positioned above the substrate and an active region layer with optical nonlinearity positioned on the lower cladding layer. The active region layer is arranged as a multiple quantum well structure. One or more feedback gratings are etched into spatially separated sections of the cladding layer positioned on either side of the active region. The periodicity of each grating section determines the mid-infrared lasing frequencies. The grating sections are electrically isolated from one another and biased independently. Tuning is achieved by changing a refractive index of one or all of the grating sections via a DC current bias thereby causing a shift in the mid-infrared lasing frequency. In this manner, a monolithic, electrically-pumped, tunable THz source is achieved.
摘要翻译：太赫兹差频生成量子级联激光源，提供单片式电控可调谐太赫兹发射。量子级联激光器包括衬底，位于衬底上方的下包层以及位于下包层上的具有光学非线性的有源区域层。有源区域层被布置为多量子阱结构。将一个或多个反馈光栅蚀刻到位于有源区任一侧的包层的空间分离部分。每个光栅部分的周期性决定了中红外激射频率。光栅部分彼此电隔离并独立偏置。调谐是通过经由DC电流偏置改变一个或全部光栅部分的折射率，从而引起中红外激光频率的偏移而实现的。以这种方式，实现了单片式电泵浦可调谐THz源。

3. 发明申请

WO2014053805A1 DUAL WAVELENGTH LASING DEVICE 审中-公开
标题翻译：双波长激光器件
公开(公告)号：WO2014053805A1
公开(公告)日：2014-04-10
申请号：PCT/GB2013/052419
申请日：2013-09-17
申请人： UNIVERSITY COLLEGE CARDIFF CONSULTANTS LIMITED
发明人： SMOWTON, Peter Michael , SHUTTS, Samuel
IPC分类号： H01S5/0625 , H01S5/10 , H01S5/125 , H01S5/34 , H01S5/00
CPC分类号： H01S5/06256 , B82Y20/00 , H01S5/0092 , H01S5/06255 , H01S5/1021 , H01S5/1092 , H01S5/125 , H01S5/341 , H01S5/3412 , H01S5/34326 , H01S5/34333 , H01S5/3436
摘要： A semiconductor lasing device (10) for emitting radiation at multiple distinct wavelengths, the device (10) comprising an active layer (16) having first portion (20) and a second portion (21), the first and second portions (20, 21) being separated by a Bragg grating (19) extending through the entire depth of the active layer (16), the first portion (20) defining a first lasing cavity (29) for emitting electromagnetic radiation at a first wavelength λ 1 and the first and second portions (20, 21) together defining a second lasing cavity (31) for emitting electromagnetic radiation at a second wavelength λ 2 .
摘要翻译：一种用于发射多个不同波长的辐射的半导体激光装置（10），所述装置（10）包括具有第一部分（20）和第二部分（21）的有源层（16），所述第一和第二部分）由延伸穿过有源层（16）的整个深度的布拉格光栅（19）分开，第一部分（20）限定用于发射第一波长λ1的电磁辐射的第一激光腔（29）第二部分（20,21）一起限定用于发射第二波长λ2的电磁辐射的第二激光腔（31）。

4. 发明申请

WO2013010494A1 COUPLED WAVEGUIDE APPARATUS AND STRUCTURES THEREFOR 审中-公开
标题翻译：联合波导装置及其结构
公开(公告)号：WO2013010494A1
公开(公告)日：2013-01-24
申请号：PCT/CN2012/078886
申请日：2012-07-19
申请人： THE CENTRE FOR INTEGRATED PHOTONICS LTD. , LEALMAN, Lan , ROBERTSON, Michael , SUN, Yishen
发明人： LEALMAN, Lan , ROBERTSON, Michael , SUN, Yishen
IPC分类号： G02B6/26
CPC分类号： G02B6/24 , B82Y20/00 , G02B6/1228 , G02B6/124 , G02B6/136 , G02B6/29316 , G02B2006/12097 , G02B2006/121 , H01S5/026 , H01S5/1007 , H01S5/1014 , H01S5/1021 , H01S5/1025 , H01S5/1032 , H01S5/1085 , H01S5/125 , H01S5/22 , H01S5/34306 , H01S2301/185
摘要： Planar waveguide apparatus provides a waveguide (100) at least partially overlying a passive buried rib waveguide for coupling optical radiation therebetween. The overlying waveguide (100) has at least one tapered section (200), the width of the taper determining the degree of coupling between the waveguides at points along the tapered section. The passive waveguide comprises, in cross section, a rib (140) of core material surrounded on all sides by the cladding material. The buried rib design can avoid problems with epitaxial growth onto etched quaternary surfaces and with very exacting accuracy requirements in fabrication.
摘要翻译：平面波导装置提供至少部分地覆盖被动掩埋肋波导的波导（100），用于耦合其间的光辐射。上覆波导（100）具有至少一个锥形部分（200），该锥度的宽度确定沿着锥形部分的点处的波导之间的耦合程度。无源波导在横截面中包括由包层材料在所有侧面上包围的芯材的肋（140）。掩埋肋设计可以避免外延生长到蚀刻的四周表面上的问题，并且在制造中具有非常严格的精度要求。

5. 发明申请

WO2009154465A1 COUPLED CAVITY LASER DIODE FOR GENERATING CHAOTIC SIGNALS 审中-公开
标题翻译：用于产生气象信号的耦合孔径激光二极管
公开(公告)号：WO2009154465A1
公开(公告)日：2009-12-23
申请号：PCT/NL2009/050367
申请日：2009-06-19
申请人： NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNO , YOUSEFI, Mirvais
发明人： YOUSEFI, Mirvais
IPC分类号： H01S5/065 , H01S5/10 , H01S5/125
CPC分类号： H01S5/1021 , H01S5/0617 , H01S5/0622 , H01S5/065 , H01S5/0656 , H01S5/0658 , H01S5/101 , H01S5/1032 , H01S5/1039 , H01S5/125 , Y10T29/49002
摘要： A chaotic light generator device comprises laser structures (10, 12) integrated on a common substrate (14). Each laser structure comprises a ridge (100, 120) of light amplifying material that forms a waveguide extending between at least partly reflective surfaces (19). Each laser structure comprises an injection electrode (102, 122) for injecting electric current into the ridge of light amplifying material. The laser structures are mutually coupled for exchanging light. A current feed circuit (20, 22) is coupled to the electrodes and configured to apply mutually different current densities to the electrodes of the laser structures. Choosing different lengths of the laser structures and suitable current densities, chaotic light emission is achieved suitable for telecommunication. Ultrashort pulses result from coupling of Eigenmodes with relaxation oscillations.
摘要翻译：混沌光发生器装置包括集成在公共衬底（14）上的激光结构（10,12）。每个激光器结构包括形成在至少部分反射表面（19）之间延伸的波导的光放大材料的脊（100,120）。每个激光器结构包括用于将电流注入到光放大材料的脊中的注入电极（102,122）。激光结构相互耦合用于交换光。电流馈电电路（20,22）耦合到电极并且被配置为向激光结构的电极施加相互不同的电流密度。选择不同长度的激光器结构和合适的电流密度，实现混沌发光适合电信。超短脉冲是由本征模与耦合振荡产生的。

6. 发明申请

WO2008150728A1 A SEMICONDUCTOR OPTICAL AMPLIFIER FOR AN EXTERNAL CAVITY DIODE LASER 审中-公开
标题翻译：用于外部二氧化钛激光器的半导体光学放大器
公开(公告)号：WO2008150728A1
公开(公告)日：2008-12-11
申请号：PCT/US2008/064586
申请日：2008-05-22
申请人： INTEL CORPORATION , SOCHAVA, Sergei
发明人： SOCHAVA, Sergei
IPC分类号： H01S5/14
CPC分类号： H01S5/141 , H01S5/026 , H01S5/0265 , H01S5/101 , H01S5/1021 , H01S5/1085 , H01S5/50
摘要： In one embodiment, a gain medium for an external cavity diode laser (ECDL) includes a gain section to provide a gain operation on optical energy in the ECDL that is controlled by a first electrical signal, a semiconductor optical amplifier (SOA) section disposed adjacent to the gain section to amplify the gained optical energy responsive to a second electrical signal, and a trench disposed between the gain section and the SOA section to act as an integrated mirror. Other embodiments are described and claimed.
摘要翻译：在一个实施例中，用于外腔二极管激光器（ECDL）的增益介质包括增益部分，用于对由第一电信号控制的ECDL中的光能提供增益操作，邻近设置的半导体光放大器（SOA）部分到增益部分，以响应于第二电信号放大所获得的光能，以及设置在增益部分和SOA部分之间用作集成反射镜的沟槽。描述和要求保护其他实施例。

7. 发明申请

WO2007144471A1 HIGH POWER LASER DEVICE 审中-公开
标题翻译：高功率激光器件
公开(公告)号：WO2007144471A1
公开(公告)日：2007-12-21
申请号：PCT/FI2007/050352
申请日：2007-06-12
申请人： EPICRYSTALS OY , KONTTINEN, Janne
发明人： KONTTINEN, Janne
IPC分类号： H01S3/098 , H01S5/065 , H01S5/183
CPC分类号： H01S5/18308 , H01S3/109 , H01S3/1118 , H01S5/0422 , H01S5/0425 , H01S5/0609 , H01S5/065 , H01S5/0657 , H01S5/1021 , H01S5/1039 , H01S5/14 , H01S5/2022
摘要： The invention is a single-crystal passively mode-locked semiconductor vertical-external-cavity surface-emitting laser (VECSEL). The device can be a single emitter or an array of emitters. The VECSEL structure is grown on a GaAs, InP or GaSb substrate. The device consists of an active region with a number of quantum wells (QW) made of GaInAs, GaInAsP, GaInNAs, GaInNAsSb, AIGaAs or GaAsP. The fundamental lasing wavelength is chosen by the gain material. The gain region is sandwiched between the bottom reflector with reflectivity close to 100% and a partial reflector. A semiconductor spacer layer made of e.g. GaAs or AIGaAs is separating the gain region and a semiconductor saturable absorber. The saturable absorber consists of one or more quantum wells made of GaInAs, GaInAsP, GaInNAs, GaInNAsSb, AIGaAs or GaAsP or layers of quantum dots and a second partial reflector. The quantum wells or layers of quantum dots can be of undoped, n-doped, p-doped or co- doped of such semiconductor material that the optical energy emitted by the gain medium is absorbed by the saturable absorber QW or quantum dot material. The n- and p-contacts are metallized on opposite sides of the semiconductor structure. The laser diode current is flowing through the layer structure partially saturating the semiconductor saturable absorber.
摘要翻译：本发明是单晶被动锁模半导体垂直 - 外腔表面发射激光器（VECSEL）。该设备可以是单个发射器或发射器阵列。 VECSEL结构在GaAs，InP或GaSb衬底上生长。该器件由具有由GaInAs，GaInAsP，GaInNA，GaInNASSb，AIGaAs或GaAsP制成的多个量子阱（QW）的有源区域组成。基波激光波长由增益材料选择。增益区域夹在反射率接近100％的底部反射器和部分反射器之间。半导体隔离层 GaAs或AIGaAs分离增益区域和半导体可饱和吸收体。可饱和吸收体由一个或多个由GaInAs，GaInAsP，GaInNA，GaInNAS Sb，AIGaAs或GaAsP或量子点层和第二部分反射体制成的量子阱组成。量子阱的量子阱或层可以是这种半导体材料的未掺杂，n掺杂，p掺杂或共掺杂，增益介质发射的光能被可饱和吸收剂QW或量子点材料吸收。 n型和p型触点在半导体结构的相对侧上金属化。激光二极管电流流过部分饱和半导体可饱和吸收体的层结构。

8. 发明申请

WO2006136346A1 MONOLITHIC MICRO-LASERS WITH STABILISED POLARISATION 审中-公开
标题翻译：具有稳定极化的单晶微激光器
公开(公告)号：WO2006136346A1
公开(公告)日：2006-12-28
申请号：PCT/EP2006/005835
申请日：2006-06-19
申请人： VRIJE UNIVERSITEIT BRUSSEL , ARIZALETA ARTEAGA, Mikel , PANAYOTOV, Krassimir , THIENPONT, Hugo
发明人： ARIZALETA ARTEAGA, Mikel , PANAYOTOV, Krassimir , THIENPONT, Hugo
IPC分类号： H01S5/183 , H01S5/14 , H01S5/06 , H01S5/062 , H01S5/068 , H01S5/10
CPC分类号： B82Y20/00 , H01S5/0607 , H01S5/06236 , H01S5/0656 , H01S5/06821 , H01S5/1021 , H01S5/142 , H01S5/18302 , H01S5/18311 , H01S5/1833 , H01S5/18355 , H01S5/18386 , H01S5/34313
摘要： A Vertical-Cavity Surface-Emitting Laser has a resonant cavity (3,5) and an external cavity (6,15) formed as a monolithic structure, the external cavity being arranged to provide loss differences for different linearly polarised modes, the loss differences being arranged to provide an output with a stable polarisation state. Compared to the known polarisation stability techniques, this enables a stable polarisation output without the complexity of modification of the VCSEL structure, less sensitivity to small changes of injected current and temperature, and less need for the complex, non monolithic optical parts. Active polarisation control and stabilisation in the same device can be achieved by growing a polarisation dependent mirror on top of the VCSEL and by applying an external field to alter an optical length of the external cavity.
摘要翻译：垂直腔表面发射激光器具有形成为单体结构的谐振腔（3,5）和外腔（6,15），所述外腔被布置成为不同线性偏振模式提供损耗差，损耗差被布置成提供具有稳定偏振状态的输出。与已知的偏振稳定性技术相比，这使得能够实现稳定的偏振输出，而不需要对VCSEL结构进行修改的复杂性，对注入的电流和温度的小变化的敏感性较小，并且对复杂的非单片光学部件的需求较少。可以通过在VCSEL的顶部生长偏振相关的反射镜并施加外部场来改变外部空腔的光学长度来实现同一器件中的主动偏振控制和稳定化。

9. 发明申请

WO2006131640A1 MICRO-OSCILLATEUR PARAMÉTRIQUE OPTIQUE À CAVITÉS COUPLÉES 审中-公开
标题翻译：包括耦合CAE的光学参数微振荡器
公开(公告)号：WO2006131640A1
公开(公告)日：2006-12-14
申请号：PCT/FR2006/001280
申请日：2006-06-06
申请人： CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE - CNRS , UNIVERSITE PARIS 7 - DENIS DIDEROT , TIGNON, Jérôme , CIUTI Christiano , DASBACH, Gregor , DIEDERICHS, Carole
发明人： TIGNON, Jérôme , CIUTI Christiano , DASBACH, Gregor , DIEDERICHS, Carole
IPC分类号： G02F1/39 , H01S5/183
CPC分类号： B82Y20/00 , G02F1/39 , G02F2201/307 , H01S5/026 , H01S5/041 , H01S5/0604 , H01S5/1021 , H01S5/183 , H01S5/34306
摘要： La présente invention concerne le domaine des oscillateurs paramétriques optiques (OPO). Elle concerne un système (S) monolithique sensiblement vertical , pour la conversion paramétrique à partir d'une onde de pompe à une longueur d'onde de pompe, ledit système comprenant au moins deux cavités résonantes (6, 7), lesdites cavités étant fortement couplées par au moins un miroir de couplage (3), au moins une desdites cavités comprenant un milieu non linéaire actif, ledit au moins un miroir de couplage étant agencé de sorte que les fréquences paramétriques associées à ladite longueur d'onde de pompe soient situées dans la bande d'arrêt dudit au moins un miroir pour une direction d'injection de ladite onde de pompe sensiblement selon l'axe dudit système.
摘要翻译：本发明涉及光参量振荡器（OPO）领域，特别涉及用于从具有泵浦波长的泵波进行参数转换的基本上垂直的单片系统（S），所述系统包括至少两个谐振腔（6,7）。所述空腔通过至少一个耦合镜（3）耦合，所述空腔中的至少一个包括有源非线性介质，并且所述至少一个耦合镜被布置成使得与泵波长相关联的参数频率位于至少一个反射镜的停止线上，用于基本上根据系统轴线的泵浦波浪的喷射方向。

10. 发明申请

WO2005107026A2 MULTI-LEVEL INTEGRATED PHOTONIC DEVICES 审中-公开
标题翻译：多级集成光电器件
公开(公告)号：WO2005107026A2
公开(公告)日：2005-11-10
申请号：PCT/US2005/012413
申请日：2005-04-14
申请人： BINOPTICS CORPORATION , BEHFAR, Alex, A. , GREEN, Malcolm, R. , SCHREMER, Alfred, T.
发明人： BEHFAR, Alex, A. , GREEN, Malcolm, R. , SCHREMER, Alfred, T.
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , G02B6/12002 , G02B6/12004 , G02B6/122 , G02B6/131 , G02B2006/12104 , G02F1/01708 , G02F2202/102 , H01S5/005 , H01S5/0071 , H01S5/026 , H01S5/0265 , H01S5/028 , H01S5/0683 , H01S5/1014 , H01S5/1017 , H01S5/1021 , H01S5/1032 , H01S5/22 , H01S5/34306
摘要： A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.
摘要翻译：激光和电吸收调制器（EAM）通过蚀刻小面工艺整体地集成。晶片上的外延层包括用于激光结构的第一层和用于EAM结构的第二层。激光与EAM之间的强光耦合通过使用两个45度的转向镜将光从激光波导垂直传播到EAM波导来实现。使用定向角蚀刻工艺来形成两个成角度的小平面。

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