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1. 发明申请

WO1990007195A1 ADHERED TYPE PHOTOELECTRIC CONVERSION ELEMENT 审中-公开
标题翻译：连接型光电转换元件
公开(公告)号：WO1990007195A1
公开(公告)日：1990-06-28
申请号：PCT/JP1989001247
申请日：1989-12-13
申请人： KANEGAFUCHI CHEMICAL INDUSTRY CO., LTD. , HAYASHI, Katsuhiko , YAMAGUCHI, Minori , NAKAYAMA, Takehisa
发明人： KANEGAFUCHI CHEMICAL INDUSTRY CO., LTD.
IPC分类号： H01L31/08
CPC分类号： H01L31/022466 , H01L31/022475 , H01L31/03762 , H01L31/095 , Y02E10/548
摘要： The element is a light sensor having a first electrode layer (6) and a second electrode layer (2) which can transmit light, and further having first and second photoconductive layers (5), (6), and a blocking layer (3) all formed between the first and second electrode layers (6), (2) by lamination. The second photoconductive layer (4) is for injecting electrons due to changes of electric characteristics of the first photoconductive layer (5) and blocking layer (3). The main ingredient of the first photoconductive layer (5) is silicon. The blocking layer (3) consists of a material having a band gap broader than that of amorphous silicon hydride and mainly including silicon and carbon, silicon and nitrogen, or silicon and oxygen. The second photoconductive layer (4) mainly consists of silicon to which impurity of a group III or V element is added. Like conventional photodiode type photoelectric converting elements, this light sensor produces a large current while the dark current is suppressed.

2. 发明申请

WO00068710A2 ENERGY SELECTIVE DETECTION SYSTEMS 审中-公开
标题翻译：能源选择性检测系统
公开(公告)号：WO00068710A2
公开(公告)日：2000-11-16
申请号：PCT/IB2000/000701
申请日：2000-05-10
IPC分类号： G01T1/02 , G01T1/24 , G01T1/29 , H01L27/146 , H01L31/08 , H01L31/09 , H01L31/115 , H05G1/64
CPC分类号： G01T1/026 , G01T1/242 , G01T1/246 , G01T1/2928 , H01L27/14647 , H01L27/14658 , H01L27/14676 , H01L31/085 , H01L31/095 , H01L31/115
摘要： An X-ray detection system includes at least two electrodes constructed and cooperatively arranged at a photoconductive material to provide an electric field inside the material in a first direction, an X-ray shield and an X-ray window, a read-out circuitry, and a processing circuitry. The X-ray shield and the X-ray window are constructed and arranged to direct X-rays into the photoconductive material in a selected X-ray direction substantially different from the first direction, wherein the directed X-rays are absorbed at a location inside the photoconductive material at a depth corresponding to their energy. The read-out circuitry is constructed and arranged to receive electric signals corresponding to the absorption location inside the photoconductive material. The processing circuitry is constructed and arranged to determine the energy of the absorbed X-rays based on the electric signals.
摘要翻译： X射线检测系统包括至少两个电极，其构造并协同地布置在光电导材料上以在第一方向上提供材料内的电场，X射线屏蔽和X射线窗口，读出电路，和处理电路。 X射线屏蔽和X射线窗口被构造和布置成在与第一方向基本上不同的所选X射线方向上将X射线引导到光电导材料中，其中定向X射线被吸收在位于内部的位置光导材料的深度对应于它们的能量。读出电路被构造和布置成接收对应于光电导材料内的吸收位置的电信号。处理电路被构造和布置成基于电信号来确定吸收的X射线的能量。

3. 发明申请

WO2012167282A1 HIGH-EFFICIENCY SILICON-COMPATIBLE PHOTODETECTORS BASED ON GE QUANTUMDOTS AND GE/SI HETERO-NANOWIRES 审中-公开
标题翻译：基于GE量子和GE / SI异质纳米粒子的高效硅可溶性光电子体
公开(公告)号：WO2012167282A1
公开(公告)日：2012-12-06
申请号：PCT/US2012/040809
申请日：2012-06-04
申请人： BROWN UNIVERSITY , PACIFICI, Domenico , ZASLAVSKY, Alexander , LE, Son, T.
发明人： PACIFICI, Domenico , ZASLAVSKY, Alexander , LE, Son, T.
IPC分类号： H01L21/00 , H01L27/148
CPC分类号： H01L31/035218 , B82Y20/00 , H01L29/0676 , H01L29/068 , H01L29/16 , H01L31/035227 , H01L31/03845 , H01L31/075 , H01L31/076 , H01L31/095 , H01L31/1808 , Y02E10/548
摘要： The present disclosure focuses on Ge nanostructured materials for optoelectronic devices: including high-efficiency quantum dot (QD) photodetectors and Si and Ge heteronanowire solar cells. The common thread among these materials is the use of Ge/Si or Ge/oxide barriers to confine carriers and enhance photoconductive gain in detectors and optical absorption and spectral coverage in solar cells.
摘要翻译：本公开专注于用于光电子器件的Ge纳米结构材料：包括高效量子点（QD）光电探测器和Si和Ge异源线太阳能电池。这些材料中的共同之处是使用Ge / Si或Ge /氧化物屏障来限制载流子，并增强了检测器中的光电导增益和太阳能电池中的光吸收和光谱覆盖。

4. 发明申请

WO0068710A3 ENERGY-SELECTIVE X-RAY RADIATION DETECTION SYSTEM 审中-公开
标题翻译：能量选择性X射线辐射检测系统
公开(公告)号：WO0068710A3
公开(公告)日：2001-04-12
申请号：PCT/IB0000701
申请日：2000-05-10
申请人： LIPPENS FRANCOIS , CHARTIER YVES
发明人： LIPPENS FRANCOIS , CHARTIER YVES
IPC分类号： G01T1/02 , G01T1/24 , G01T1/29 , H01L27/146 , H01L31/08 , H01L31/09 , H01L31/115 , H05G1/64
CPC分类号： G01T1/026 , G01T1/242 , G01T1/246 , G01T1/2928 , H01L27/14647 , H01L27/14658 , H01L27/14676 , H01L31/085 , H01L31/095 , H01L31/115
摘要： An X-ray detection system includes at least two electrodes constructed and cooperatively arranged at a photoconductive material to provide an electric field inside the material in a first direction, an X-ray shield and an X-ray window, a read-out circuitry, and a processing circuitry. The X-ray shield and the X-ray window are constructed and arranged to direct X-rays into the photoconductive material in a selected X-ray direction substantially different from the first direction, wherein the directed X-rays are absorbed at a location inside the photoconductive material at a depth corresponding to their energy. The read-out circuitry is constructed and arranged to receive electric signals corresponding to the absorption location inside the photoconductive material. The processing circuitry is constructed and arranged to determine the energy of the absorbed X-rays based on the electric signals.
摘要翻译： X射线检测系统包括至少两个电极，其被构造并协同地布置在感光材料上以在第一方向上提供材料内的电场，X射线屏蔽和X射线窗口，读出电路，和处理电路。 X射线屏蔽和X射线窗被构造和布置成在与第一方向基本上不同的所选X射线方向上将X射线引导到光电导材料中，其中定向X射线在内部的位置被吸收光导材料的深度对应于它们的能量。读出电路被构造和布置成接收与光电导材料内部的吸收位置对应的电信号。处理电路被构造和布置成基于电信号确定吸收的X射线的能量。

5. 发明申请

WO1996024165A1 UNCOOLED YBaCuO THIN FILM INFRARED DETECTOR 审中-公开
标题翻译：不安的YBaCuO薄膜红外探测器
公开(公告)号：WO1996024165A1
公开(公告)日：1996-08-08
申请号：PCT/US1995016399
申请日：1995-12-29
申请人： SOUTHERN METHODIST UNIVERSITY
发明人： SOUTHERN METHODIST UNIVERSITY , BUTLER, Donald, P. , CELIK-BUTLER, Zeynep , PAO-CHUAN, Shan
IPC分类号： H01L29/12
CPC分类号： H01L31/032 , G01J5/20 , G01J5/34 , H01L27/16 , H01L31/095
摘要： A thermal detector (B) includes a transducer layer (2) of semiconducting yttrium barium copper oxide which is sensitive at room temperature to radiation and provides detection of infrared radiation. In a gate-insulated transistor embodiment, a layer of ferroelectric semiconducting yttrium barium copper oxide (34) forms a gate insulator layer and increases capacitance of the transistor or latches of the transistor according to the polarization direction of the ferroelectric layer.
摘要翻译：热检测器（B）包括半导体钇钡铜氧化物的换能器层（2），其在室温下对辐射敏感并提供红外辐射的检测。在栅极绝缘晶体管的实施例中，铁电半导体钇钡铜氧化物层34形成栅极绝缘体层，并根据铁电层的极化方向增加晶体管的晶体管或锁存器的电容。

6. 发明申请

WO2016027793A1 撮像素子、固体撮像装置及び電子デバイス审中-公开
标题翻译：图像捕获元件，固态图像捕获器件和电子器件
公开(公告)号：WO2016027793A1
公开(公告)日：2016-02-25
申请号：PCT/JP2015/073072
申请日：2015-08-18
申请人：ソニー株式会社
发明人：森脇　俊貴
IPC分类号： H01L27/146
CPC分类号： H01M4/02 , H01B1/08 , H01L27/14625 , H01L27/14685 , H01L29/247 , H01L31/0224 , H01L31/095 , H01M4/48
摘要：　本開示の目的は、簡素な構造を有するにも拘わらず、受光層等に応力ダメージが発生し難い撮像素子、及び、係る撮像素子を備えた固体撮像装置、並びに、電子デバイスを提供することにある。　撮像素子は、第１電極２１、第１電極２１上に形成された受光層２３、及び、受光層２３上に形成された第２電極２２から成る積層構造体を備えており、第２電極２２は、透明で導電性を有する非晶質酸化物から成る。
摘要翻译：本公开的目的是提供：尽管所述元件具有简单的结构，其中光接收层等不易受到应力损伤的图像捕获元件; 设置有图像捕获元件的固态图像捕获装置; 和电子设备。图像捕获元件设置有包括第一电极（21），形成在第一电极（21）上的光接收层（23）和形成在光接收层（23）上的第二电极）的层压结构），所述第二电极（22）包括透明且导电的无定形氧化物。

7. 发明申请

WO2014092001A1 放射線検出装置审中-公开
标题翻译：辐射探测器
公开(公告)号：WO2014092001A1
公开(公告)日：2014-06-19
申请号：PCT/JP2013/082736
申请日：2013-12-05
申请人：富士フイルム株式会社
发明人：山下　清司 , 伊勢　俊大
IPC分类号： H01L27/146 , G01T1/24 , H01L27/144 , H01L31/0248 , H04N5/32
CPC分类号： H01L31/0272 , H01L27/14676 , H01L31/085 , H01L31/095 , H01L31/115 , H01L31/117 , H01L31/20 , H01L51/0037 , H01L51/0046 , H01L51/4213 , H01L2031/0344
摘要：　第１電極３４と、第１電極に対向配置されている第２電極４９と、第１電極と第２電極との間に配置され、アモルファスセレンを含むセレン層４８と、第１電極とセレン層との間にセレン層に隣接して配置され、電子親和力が３．７ｅＶ以下の正孔輸送材料を含む第１ブロッキング有機層３８と、第２電極とセレン層との間にセレン層に隣接して配置され、イオン化ポテンシャルが５．９ｅＶ以上の電子輸送材料を含む第２ブロッキング有機層３７と、を含む積層構造を有する、暗電流が小さく、耐久性に優れ、かつ、残像が少ない放射線検出装置１０である。
摘要翻译：一种具有多层结构的放射线检测器（10），包括：第一电极（34）; 布置成面对第一电极的第二电极（49）; 布置在第一电极和第二电极之间并含有非晶硒的硒层（48）第一阻挡有机层（38），其布置成邻近硒层在第一电极和硒层之间并且包含电子亲和力为3.7eV以下的空穴传输材料; 以及与第二电极和硒层之间的硒层相邻设置的第二阻挡有机层（37），并且包含离子化电位为5.9eV以上的电子传输材料。该辐射检测器（10）具有低暗电流，优异的耐久性和较少的残影。

8. 发明申请

WO2011055626A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2011055626A1
公开(公告)日：2011-05-12
申请号：PCT/JP2010/068234
申请日：2010-10-12
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , KOYAMA, Jun , YAMAZAKI, Shunpei
发明人： KOYAMA, Jun , YAMAZAKI, Shunpei
IPC分类号： H01L27/146 , H04N5/374
CPC分类号： H01L27/1225 , H01L27/102 , H01L27/1203 , H01L27/1214 , H01L27/14612 , H01L27/14616 , H01L27/14627 , H01L27/14632 , H01L27/14643 , H01L29/78693 , H01L31/095 , H04N5/37457
摘要： A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. When the off-state current of a thin film transistor including an oxide semiconductor layer is set to 1 10 -13 A or less and the thin film transistor is used as a reset transistor and a transfer transistor of the solid-state image sensor, the potential of the signal charge storage portion is kept constant, so that a dynamic range can be improved. When a silicon semiconductor which can be used for a complementary metal oxide semiconductor is used for a peripheral circuit, a high-speed semiconductor device with low power consumption can be manufactured.
摘要翻译：提供了一种长时间保持电位且包括具有稳定电特性的薄膜晶体管的固态图像传感器。当将包括氧化物半导体层的薄膜晶体管的截止电流设定为1×10-13A或更低，并且薄膜晶体管用作固态图像传感器的复位晶体管和传输晶体管时，信号电荷存储部的电位保持恒定，能够提高动态范围。当将可用于互补金属氧化物半导体的硅半导体用于外围电路时，可以制造具有低功耗的高速半导体器件。

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