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1. 发明申请

WO1998017716A1 METHOD FOR WASHING PREFOAMED PARTICLES 审中-公开
标题翻译：洗涤预制颗粒的方法
公开(公告)号：WO1998017716A1
公开(公告)日：1998-04-30
申请号：PCT/JP1997003670
申请日：1997-10-14
申请人： KANEKA CORPORATION , IWAMOTO, Tomonori , YAMAGUCHI, Takema , YAMAGUCHI, Minori
发明人： KANEKA CORPORATION
IPC分类号： C08J09/18
CPC分类号： C08J9/224 , B29C44/3461 , C08J2323/16
摘要： A method for washing prefoamed particles, comprising washing prefoamed particles prepared by depressurization foaming and having a sparingly water-soluble inorganic compound as a dispersant deposited thereon with an aqueous solution of a water-soluble compound having in its molecule at least one functional group and at least one hydrophilic functional group bondable to the surface of the sparingly water-soluble inorganic compound. This washing method enables prefoamed particles reduced in the amount of an inorganic dispersant deposited thereon to be prepared by depressurization foaming by using the same equipment as the one used in washing with water or hot water without the use of a large amount of water or hot water.
摘要翻译：一种用于洗涤预发泡颗粒的方法，包括洗涤通过减压发泡制备的预发泡颗粒，并将具有微溶于水的无机化合物作为分散剂沉积在其上，其中分子中具有至少一个官能团的水溶性化合物的水溶液，至少一个与微水溶性无机化合物的表面可键合的亲水官能团。这种洗涤方法使得通过使用与用水或热水洗涤中使用的相同的设备而不使用大量的水或热水，通过减压发泡制备的沉积在其上的无机分散剂的量减少的预发泡颗粒。

2. 发明申请

WO1992005585A1 DISTORTION SENSOR 审中-公开
标题翻译：失真传感器
公开(公告)号：WO1992005585A1
公开(公告)日：1992-04-02
申请号：PCT/JP1988000320
申请日：1988-03-30
申请人： TAWADA, Yoshihisa , YAMAGUCHI, Minori , HOSOKAWA, Yoichi , ZENKI, Tomoyoshi
IPC分类号： H01L29/84
CPC分类号： G01L1/2293
摘要： A distortion sensor for detecting distortion by utilizing a correlation with the electric resistance of a non-single-crystal semiconductor containing silicon. The distortion sensor of the invention is composed of a non-single-crystal semiconductor, including silicon, whose activation energy of dark conductivity is smaller than 15meV. The distortion sensor of the invention can be used for measuring distortion even under the conditions of a relatively great magnetic field.
摘要翻译：一种用于通过利用与含有硅的非单晶半导体的电阻的相关性来检测失真的失真传感器。本发明的失真传感器由包含硅的非单晶半导体构成，其黑暗电导率的活化能小于15meV。本发明的失真传感器即使在较大磁场的条件下也可用于测量失真。

3. 发明申请

WO1990007195A1 ADHERED TYPE PHOTOELECTRIC CONVERSION ELEMENT 审中-公开
标题翻译：连接型光电转换元件
公开(公告)号：WO1990007195A1
公开(公告)日：1990-06-28
申请号：PCT/JP1989001247
申请日：1989-12-13
申请人： KANEGAFUCHI CHEMICAL INDUSTRY CO., LTD. , HAYASHI, Katsuhiko , YAMAGUCHI, Minori , NAKAYAMA, Takehisa
发明人： KANEGAFUCHI CHEMICAL INDUSTRY CO., LTD.
IPC分类号： H01L31/08
CPC分类号： H01L31/022466 , H01L31/022475 , H01L31/03762 , H01L31/095 , Y02E10/548
摘要： The element is a light sensor having a first electrode layer (6) and a second electrode layer (2) which can transmit light, and further having first and second photoconductive layers (5), (6), and a blocking layer (3) all formed between the first and second electrode layers (6), (2) by lamination. The second photoconductive layer (4) is for injecting electrons due to changes of electric characteristics of the first photoconductive layer (5) and blocking layer (3). The main ingredient of the first photoconductive layer (5) is silicon. The blocking layer (3) consists of a material having a band gap broader than that of amorphous silicon hydride and mainly including silicon and carbon, silicon and nitrogen, or silicon and oxygen. The second photoconductive layer (4) mainly consists of silicon to which impurity of a group III or V element is added. Like conventional photodiode type photoelectric converting elements, this light sensor produces a large current while the dark current is suppressed.

4. 发明申请

WO1988007769A1 COLOR SENSOR 审中-公开
标题翻译：颜色传感器
公开(公告)号：WO1988007769A1
公开(公告)日：1988-10-06
申请号：PCT/JP1988000321
申请日：1988-03-30
申请人： KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA , YAMAGISHI, Hideo , HIROE, Akihijo , NISHIO, Hitoshi , MURAKAMI, Satoru , MIKI, Keiko , YAMAGUCHI, Minori , MIZUKAMI, Seishiro , TAWADA, Yoshihisa
发明人： KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA
IPC分类号： H01L31/10
CPC分类号： H01L31/076 , H01L31/101 , Y02E10/548
摘要： A semiconductor color sensor comprising a semiconductor layer including a lamination of a plurality of pn or pin junctions, the semiconductor layer having an electrically conductive layer on both surfaces thereof. The color sensor is so constituted that the generation of photo-carriers should increase with the increasing distance from the junction of the input side in the whole wavelength range to be measured, and current is detected by changing the voltage between said two electrically conductive layers. The color sensor of the invention features its simplified structure, and it may easily be formed into an integrated circuit and formed with an increased effective area. In addition, the manufacturing process is simplified and the yield is increased, thus decreasing costs.

5. 发明申请

WO1989006439A1 SOLAR CELL ARRAY FOR DRIVING MOSFET GATES 审中-公开
标题翻译：用于驱动MOSFET栅极的太阳能电池阵列
公开(公告)号：WO1989006439A1
公开(公告)日：1989-07-13
申请号：PCT/JP1988001330
申请日：1988-12-26
申请人： KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA , MURAKAMI, Satoru , YOSHIDA, Eiichi , ZENKI, Tomoyoshi , YAMAGUCHI, Minori , NAKAYAMA, Takehisa , TAWADA, Yoshihisa
发明人： KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA
IPC分类号： H01L21/66
CPC分类号： H01L31/076 , H01L31/046 , H01L31/0465 , H03K17/78 , H03K17/785 , Y02E10/548
摘要： A solar cell array for producing electromotive force in response to incident light to drive MOSFET gates for use as a semiconductor relay. The manufacture of a crystalline silicon semiconductor used as a solar cell for the semiconductor relay requires too many mask patterns and complicated processes. This involves difficulties in device integration and thin-film formation, resulting in an increase in the cost. The invention provides a solar cell wherein a great number of semiconductor cells of amorphous silicon are connected in series to drive MOSFET gates.

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