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    • 9. 发明申请
    • MASK FOR USE IN A MICROLITHOGRAPHIC PROJECTION EXPOSURE SYSTEM
    • MASK FOR USE IN的微光刻投射曝光设备
    • WO2005076078A3
    • 2008-12-11
    • PCT/EP2005000640
    • 2005-01-24
    • ZEISS CARL SMT AGTOTZECK MICHAELMAUL MANFRED
    • TOTZECK MICHAELMAUL MANFRED
    • G03F1/00
    • G03F1/50G03F1/54
    • The invention relates to a mask for use in a microlithographic projection exposure system (10), comprising a support (40), to which a pattern of opaque structures (44) is applied. To reduce the dependence of the transmission capability on the polarisation, the structures (44) contain a material with a refractive index, whose imaginary part is greater than 1.8 and preferably greater than 2.2. Silicon, for example, can constitute a material of this type. Alternatively, or in addition, a dielectric material (54) can be provided in a gap (48) between two structures (442), whereby said material does not come into contact with the structures (44). The dependence of the absorption capability on the polarisation is also reduced by the dielectric coating (60) of the structures (44).
    • 一种用于在微光刻投射曝光设备(10)使用掩模包括在其上施加不透明结构(44)的图案的支撑件(40)。 为了减少结构(44)的透射率的偏振依赖性包括具有折射率虚部大于1.8和优选大于2.2的材料。 在这样的材料例如可以是硅。 或者或另外,可以是在两个结构(442)之间的中间空间(48)是介电材料(54)不影响结构(44)。 在吸收能力的偏振波依赖性的降低也由结构(44)的电介质涂层(60)来实现的。
    • 10. 发明申请
    • ILLUMINATION LENS SYSTEM FOR PROJECTION MICROLITHOGRAPHY, AND MEASURING AND MONITORING METHOD FOR SUCH AN ILLUMINATION LENS SYSTEM
    • 投影显微照明的照明光学和这种照明光学的测量和监测方法
    • WO2008061681A2
    • 2008-05-29
    • PCT/EP2007009971
    • 2007-11-19
    • ZEISS CARL SMT AGPATRA MICHAELDEGUENTHER MARKUSLAYH MICHAELWANGLER JOHANNESMAUL MANFRED
    • PATRA MICHAELDEGUENTHER MARKUSLAYH MICHAELWANGLER JOHANNESMAUL MANFRED
    • G03F7/20
    • G03F7/7085G03F7/70116
    • Disclosed is a microlithographic projection exposure system (1) comprising an illumination system (4) with an illumination lens system (5) for illuminating an illumination field on a reticle level (6). The illumination lens system is equipped with a light distribution device (12a) encompassing a light deflection array (12) made up of individual elements, and an optical subassembly (21, 23 to 26) which converts the light intensity distribution predefined on a first level (19) of the illumination lens system (5) into an illumination angle distribution on the reticle level (6). Extracted illumination light (31) is applied to a spatially and time-resolved detection device (30) downstream of an extraction device (17) located between the light deflection array (12) and the reticle plane (6) within the light path in such a way that the detection device (30) detects a light intensity distribution corresponding to the light intensity distribution on the first level (19). The detection device (30) allows the influence of individual elements or groups of individual elements on the light intensity distribution on the first level (19) to be determined, especially by varying said individual elements or groups thereof over time. The light deflection array of the disclosed illumination lens system functions during normal operation.
    • 微光刻投射曝光设备(1)具有照明系统(4),照明系统(4)具有用于照射标线板平面(6)中的照明场的照明光学器件(5)。 一种光分配装置(12A),其包括单个元件的光的偏转阵列(12),和光分布的装置(12a)的在照明光学部件的第一平面(19)的光学组件(21,23〜26)(5) 在标线片平面(6)中的照明角度分布中给定的光强度分布也属于照明光学器件(5)。 甲空间和时间分辨检测装置(30)被加载位于光偏转阵列(12)之间的光路之后并且在掩模母版平面(6)去耦合元件(17)被连接到耦合输出的照明光(31),该检测装置(30)是一个 第一个平面(19)的光强分布对应的光强分布检测到。 利用检测装置(30),尤其是具有单个元件或单个元件组的时间变化,可以确定它们对第一平面(19)中的光强度分布的影响。 其结果是照明光学系统,其中在正常操作期间发生光偏转阵列的功能。