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1. 发明申请

WO2010120372A3 LIGHT EMITTING SEMICONDUCTOR METHODS AND DEVICES 审中-公开
标题翻译：发光半导体方法和器件
公开(公告)号：WO2010120372A3
公开(公告)日：2011-01-27
申请号：PCT/US2010001133
申请日：2010-04-16
申请人： UNIV ILLINOIS , QUANTUM ELECTRO OPTO SYS SDN , WALTER GABRIEL , FENG MILTON , HOLONYAK NICK , THEN HAN WUI , WU CHAO-HSIN
发明人： WALTER GABRIEL , FENG MILTON , HOLONYAK NICK , THEN HAN WUI , WU CHAO-HSIN
IPC分类号： H01S3/0941 , H01S3/00
CPC分类号： H01S5/06203 , B82Y20/00 , H01S5/0035 , H01S5/0425 , H01S5/18311 , H01S5/3095 , H01S5/34313
摘要： A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity of voltage distribution in the region therebetween. In a further embodiment lateral scaling is used to control device speed for high frequency operation.
摘要翻译：一种从提高效率的二端子半导体器件产生发光的方法，包括以下步骤：提供包括半导体漏极区域的分层半导体结构，该半导体漏极区域包括至少一个漏极层，设置在漏极区域上的半导体基极区域，至少一个基极层，以及设置在所述基极区域的一部分上并且包括发射极台面的半导体发射极区域，所述发射极台面包括至少一个发射极层; 在碱性区域中提供至少一个呈现量子效应的区域; 提供在所述基极区域的暴露表面上具有第一部分的基极/漏电极，以及与所述漏极区域耦合的另一部分，并且在所述发射极区域的表面上提供发射极; 施加相对于基极/漏极和发射极电极的信号以获得从基极区域发出的光; 以及在其间的区域中配置基极/漏极和发射极用于电压分布的实质均匀性。在另一实施例中，横向缩放用于控制高频操作的设备速度。

2. 发明申请

WO2010080694A3 LIGHT EMITTING AND LASING SEMICONDUCTOR DEVICES AND METHODS 审中-公开
标题翻译：发光和激光半导体器件和方法
公开(公告)号：WO2010080694A3
公开(公告)日：2010-10-07
申请号：PCT/US2010000027
申请日：2010-01-07
申请人： UNIV ILLINOIS , QUANTUM ELECTRO OPTO SYS SDN , WALTER GABRIEL , HOLONYAK NICK , FENG MILTON
发明人： WALTER GABRIEL , HOLONYAK NICK , FENG MILTON
IPC分类号： H01S5/00 , H01S5/30
CPC分类号： H01S5/06203 , B82Y20/00 , H01S5/18311 , H01S5/3412 , H01S5/34313
摘要： A semiconductor light emitting device, including: a heterojunction bipolar light-emitting transistor having a base region between emitter and collector regions; emitter, base, and collector electrodes for coupling electrical signals with the emitter, base, and collector regions, respectively; and a quantum size region in the base region; the base region including a first base sub-region on the emitter side of the quantum size region, and a second base sub-region on the collector side of the quantum size region; and the first and second base sub- regions having asymmetrical band structures. Also disclosed is a method for producing light emission from a two-terminal semiconductor structure, including the following steps: providing a semiconductor structure that includes a first semiconductor junction between an emitter region of a first conductivity type and a base region of a second conductivity type opposite to that of the first conductivity type, and a second semiconductor junction between the base region and a drain region; providing, within the base region, a region exhibiting quantum size effects; providing an emitter electrode coupled with the emitter region; providing a base/drain electrode coupled with the base region and the drain region; and applying signals with respect to the emitter and base/drain electrodes to obtain light emission from the semiconductor structure.
摘要翻译：一种半导体发光器件，包括：异质结双极型发光晶体管，具有在发射极和集电极区域之间的基极区域; 发射极，基极和集电极，用于分别与发射极，基极和集电极区域耦合电信号; 以及所述基极区域中的量子尺寸区域; 所述基极区域包括所述量子尺寸区域的所述发射极侧上的第一基极子区域和所述量子尺寸区域的所述集电极侧上的第二基极子区域; 并且第一和第二基底子区域具有不对称的带结构。还公开了一种用于从双端半导体结构产生光发射的方法，该方法包括以下步骤：提供半导体结构，该半导体结构包括在第一导电类型的发射极区域和第二导电类型的基极区域之间的第一半导体结与第一导电类型相反，以及在基极区和漏极区之间的第二半导体结; 在基区内提供显示量子尺寸效应的区域; 提供与发射极区域耦合的发射极电极; 提供与基极区和漏极区耦合的基极/漏极; 并且相对于发射极和基极/漏极施加信号以获得来自半导体结构的发光。

3. 发明申请

WO2010087948A8 LIGHT EMITTING AND LASING TRANSISTOR DEVICES AND METHODS 审中-公开
标题翻译：发光和激光晶体管器件和方法
公开(公告)号：WO2010087948A8
公开(公告)日：2010-09-30
申请号：PCT/US2010000161
申请日：2010-01-22
申请人： UNIV ILLINOIS , FENG MILTON , HOLONYAK NICK JR , WALTER GABRIEL , THEN HAN WUI
发明人： FENG MILTON , HOLONYAK NICK JR , WALTER GABRIEL , THEN HAN WUI
IPC分类号： H01S5/00 , H01S5/20
CPC分类号： H01S5/06203 , H01S5/3095
摘要： A method for producing light emission from a semiconductor device includes the following steps: providing a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region that forms a tunnel junction adjacent the base region; providing, in the base region, a region exhibiting quantum size effects; providing an emitter terminal, a base terminal, and a collector terminal respectively coupled with the emitter region, the base region, and the collector region; and applying electrical signals with respect to the emitter terminal, the base terminal and the collector terminal to produce light emission from the base region.
摘要翻译：一种用于从半导体器件产生光发射的方法，包括以下步骤：提供设置在半导体发射极区和形成与基极区相邻的隧道结的半导体集电极区之间的半导体基极区; 在基区中提供表现出量子尺寸效应的区域; 提供分别与发射极区域，基极区域和集电极区域耦合的发射极端子，基极端子和集电极端子; 并且相对于发射极端子，基极端子和集电极端子施加电信号以产生来自基极区域的光发射。

4. 发明申请

WO2010087948A3 LIGHT EMITTING AND LASING TRANSISTOR DEVICES AND METHODS 审中-公开
公开(公告)号：WO2010087948A3
公开(公告)日：2010-11-18
申请号：PCT/US2010000161
申请日：2010-01-22
申请人： UNIV ILLINOIS , FENG MILTON , HOLONYAK NICK JR , WALTER GABRIEL , THEN HAN WUI
发明人： FENG MILTON , HOLONYAK NICK JR , WALTER GABRIEL , THEN HAN WUI
IPC分类号： H01S5/00 , H01S5/20
CPC分类号： H01S5/06203 , H01S5/3095
摘要： A method for producing light emission from a semiconductor device includes the following steps: providing a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region that forms a tunnel junction adjacent the base region; providing, in the base region, a region exhibiting quantum size effects; providing an emitter terminal, a base terminal, and a collector terminal respectively coupled with the emitter region, the base region, and the collector region; and applying electrical signals with respect to the emitter terminal, the base terminal and the collector terminal to produce light emission from the base region.

5. 发明申请

WO2006093883A2 SEMICONDUCTOR BIPOLAR LIGHT EMITTING AND LASER DEVICES AND METHODS 审中-公开
标题翻译：半导体双极发光器件和激光器件和方法
公开(公告)号：WO2006093883A2
公开(公告)日：2006-09-08
申请号：PCT/US2006006879
申请日：2006-02-27
申请人： UNIV ILLINOIS , FENG MILTON , HOLONYAK NICK JR , CHAN RICHARD , WALTER GABRIEL
发明人： FENG MILTON , HOLONYAK NICK JR , CHAN RICHARD , WALTER GABRIEL
CPC分类号： H01S5/06203 , B82Y20/00 , H01S5/06226 , H01S5/18341 , H01S5/305 , H01S5/3095 , H01S5/3211 , H01S5/3412 , H01S5/34313 , H01S5/4031
摘要： A method for producing an optical output includes the following steps: providing first and second electrical signals; providing a bipolar light-emitting transistor device that includes collector, base, and emitter regions; providing a collector electrode coupled with the collector region and an emitter electrode coupled with the emitter region, and coupling electrical potentials with respect to the collector and emitter electrodes; providing an optical coupling in optical communication with the base region; providing first and second base electrodes coupled with the base region; and coupling the first and second electrical signals with the first and second base electrodes, respectively, to produce an optical output emitted from the base region and coupled into the optical coupling, the optical output being a function of the first and second electrical signals. Also disclosed in an improved pnp transistor laser and a technique for switching back and forth between a stimulated emission mode that produces output laser pulses and a spontaneous emission mode.
摘要翻译：一种用于产生光输出的方法包括以下步骤：提供第一和第二电信号; 提供包括集电极区，基极区和发射极区的双极型发光晶体管器件; 提供与集电极区域耦合的集电极电极和与发射极区域耦合的发射极电极，并且相对于集电极电极和发射极电极耦合电势; 提供与所述基极区域光通信的光耦合; 提供与基极区耦合的第一和第二基极; 以及分别将所述第一和第二电信号与所述第一和第二基极耦合以产生从所述基极区发射并且耦合到所述光耦合中的光输出，所述光输出是所述第一和第二电信号的函数。还公开了改进的pnp晶体管激光器和用于在产生输出激光脉冲的受激发射模式和自发发射模式之间来回切换的技术。

6. 发明申请

WO2009051664A3 LIGHT EMITTING AND LASING SEMICONDUCTOR DEVICES AND METHODS 审中-公开
标题翻译：发光和激光半导体器件和方法
公开(公告)号：WO2009051664A3
公开(公告)日：2009-08-13
申请号：PCT/US2008011653
申请日：2008-10-10
申请人： UNIV ILLINOIS , HOLONYAK NICK JR , FENG MILTON , WALTER GABRIEL , JAMES ADAM
发明人： HOLONYAK NICK JR , FENG MILTON , WALTER GABRIEL , JAMES ADAM
IPC分类号： H01L33/00 , H01S3/0941
CPC分类号： H01S5/06203 , H01S5/3095
摘要： A two terminal semiconductor device for producing light emission in response to electrical signals, includes: a terminal-less semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region having a tunnel junction adjacent the base region; the base region having a region therein exhibiting quantum size effects; an emitter terminal and a collector terminal respectively coupled with the emitter region and the collector region; whereby application of the electrical signals with respect to the emitter and collector terminals, causes light emission from the base region. Application of the electrical signals is operative to reverse bias the tunnel junction. Holes generated at the tunnel junction recombine in the base region with electrons flowing into the base region, resulting in the light emission. The region exhibiting quantum size effects is operative to aid recombination.
摘要翻译：一种用于响应于电信号产生发光的二端半导体器件，包括：设置在半导体发射极区域和具有邻近基极区域的隧道结的半导体集电极区域之间的无端半导体基极区域; 所述基区具有其中显示量子尺寸效应的区域; 分别与发射极区域和集电极区域耦合的发射极端子和集电极端子; 由此使得相对于发射极和集电极端子的电信号的施加导致来自基极区域的光发射。电信号的应用可用于反向偏置隧道结。在隧道结处产生的孔在基极区域中与电子流入基极区域，导致发光。显示量子尺寸效应的区域有助于重组。

7. 发明申请

WO2011056233A8 HIGH SPEED COMMUNICATION 审中-公开
标题翻译：高速通信
公开(公告)号：WO2011056233A8
公开(公告)日：2012-06-14
申请号：PCT/US2010002920
申请日：2010-11-08
申请人： QUANTUM ELECTRO OPTO SYS SDN , WALTER GABRIEL
发明人： WALTER GABRIEL
IPC分类号： H04B3/54 , H04B10/12
CPC分类号： H04B10/12 , H04B10/2504 , H04B10/25759
摘要： The disclosure has application for use in establishing a communication link between a first location and a second location, the first location having an electrical driver circuit that receives input data to be communicated, and the second location having an electrical receiver circuit for producing output data representative of the input data. The method includes the following steps: providing a tilted charge light emitting device at the first location and coupled with the driver circuit such that the light produced by the tilted charge light- emitting device is a function of the input data; providing an optical fiber between the first and second locations; coupling light from the tilted charge light emitting device into the optical fiber; and providing, at the second location, a photodetector coupled with the optical fiber and with the receiver circuit; whereby electrical signals representative of the input data are output from the receiver circuit.
摘要翻译：本公开具有用于建立第一位置和第二位置之间的通信链路的应用，第一位置具有接收要传送的输入数据的电驱动器电路，并且第二位置具有用于产生输出数据代表的电接收器电路的输入数据。该方法包括以下步骤：在第一位置处提供倾斜电荷发光器件，并与驱动器电路耦合，使得由倾斜电荷发光器件产生的光是输入数据的函数; 在所述第一和第二位置之间提供光纤; 将来自倾斜电荷发光器件的光耦合到光纤中; 以及在所述第二位置处提供与所述光纤耦合的光电检测器和所述接收器电路; 从而从接收器电路输出表示输入数据的电信号。

8. 发明申请

WO2012039754A3 LIGHT EMITTING AND LASING SEMICONDUCTOR METHODS AND DEVICES 审中-公开
标题翻译：发光和激光半导体方法和器件
公开(公告)号：WO2012039754A3
公开(公告)日：2012-05-31
申请号：PCT/US2011001616
申请日：2011-09-20
申请人： QUANTUM ELECTRO OPTO SYS SDN , WALTER GABRIEL
发明人： WALTER GABRIEL
IPC分类号： H01L29/737 , H01L33/04
CPC分类号： H01L33/0025 , H01S5/06203 , H01S5/06226 , H01S5/183 , H01S5/3407 , H01S5/3415 , H01S2304/04
摘要： The invention is applicable for use in conjunction with a light-emitting semiconductor structure that includes a semiconductor active region of a first conductivity type containing a quantum size region and having a first surface adjacent a semiconductor input region of a second conductivity type that is operative, upon application of electrical potentials with respect to the active and input regions, to produce light emission from the active region. A method is provided for enhancing operation of the light-emitting semiconductor structure, including the following steps: providing a semiconductor output region that includes a semiconductor auxiliary layer of the first conductivity type adjacent a second surface, which opposes the first surface of the active region, and providing the auxiliary layer as a semiconductor material having a diffusion length for minority carriers of the first conductivity type material that is substantially shorter than the diffusion length for minority carriers of the semiconductor material of the active region.
摘要翻译：本发明可应用于包括含有量子尺寸区域的第一导电类型的半导体有源区并且具有邻近可操作的第二导电类型的半导体输入区的第一表面的发光半导体结构，在相对于有源区和输入区施加电势时，产生来自有源区的光发射。提供一种用于增强发光半导体结构的操作的方法，包括以下步骤：提供半导体输出区，其包括与第二表面相邻的第一导电类型的半导体辅助层，该第二表面与有源区的第一表面相对并且提供辅助层作为半导体材料，该半导体材料具有与第一导电类型材料的少数载流子的扩散长度基本上短于有源区半导体材料的少数载流子的扩散长度。

9. 发明申请

WO2011056233A3 HIGH SPEED COMMUNICATION 审中-公开
标题翻译：高速通信
公开(公告)号：WO2011056233A3
公开(公告)日：2011-07-28
申请号：PCT/US2010002920
申请日：2010-11-08
申请人： QUANTUM ELECTRO OPTO SYSTEMS SDN BHD , WALTER GABRIEL
发明人： WALTER GABRIEL
IPC分类号： H04B3/54 , H04B10/12
CPC分类号： H04B10/12 , H04B10/2504 , H04B10/25759
摘要： The disclosure has application for use in establishing a communication link between a first location and a second location, the first location having an electrical driver circuit that receives input data to be communicated, and the second location having an electrical receiver circuit for producing output data representative of the input data. The method includes the following steps: providing a tilted charge light emitting device at the first location and coupled with the driver circuit such that the light produced by the tilted charge light- emitting device is a function of the input data; providing an optical fiber between the first and second locations; coupling light from the tilted charge light emitting device into the optical fiber; and providing, at the second location, a photodetector coupled with the optical fiber and with the receiver circuit; whereby electrical signals representative of the input data are output from the receiver circuit.
摘要翻译：本公开可用于建立第一位置与第二位置之间的通信链路，第一位置具有接收要传送的输入数据的电驱动器电路，并且第二位置具有用于产生代表输出数据的电接收器电路的输入数据。该方法包括以下步骤：在第一位置处提供倾斜的电荷发光装置并且与驱动电路耦合，使得由倾斜的电荷发光装置产生的光是输入数据的函数; 在第一和第二位置之间提供光纤; 将来自倾斜的电荷发光装置的光耦合到光纤中; 以及在所述第二位置处提供与所述光纤和所述接收器电路耦合的光电探测器; 由此代表输入数据的电信号从接收器电路输出。

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