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1. 发明申请

WO2009036071A3 NANOTUBE ENABLED, GATE-VOLTAGE CONTROLLED LIGHT EMITTING DIODES 审中-公开
标题翻译：纳米管启用，门控电压控制的发光二极管
公开(公告)号：WO2009036071A3
公开(公告)日：2009-06-25
申请号：PCT/US2008075866
申请日：2008-09-10
申请人： UNIV FLORIDA , RINZLER ANDREW GABRIEL , LIU BO , MCCARTHY MITCHELL AUSTIN , REYNOLDS JOHN ROBERT , SO FRANKY
发明人： RINZLER ANDREW GABRIEL , LIU BO , MCCARTHY MITCHELL AUSTIN , REYNOLDS JOHN ROBERT , SO FRANKY
IPC分类号： H05B33/00 , H01L29/00
CPC分类号： H01L51/5296 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01L51/0039 , H01L51/0043 , H01L51/0048 , H01L51/0558 , H01L51/057 , H01L51/102 , H01L51/5203 , Y10S977/701 , Y10S977/742 , Y10S977/762 , Y10S977/767 , Y10S977/932 , Y10S977/936 , Y10S977/937 , Y10S977/938
摘要： Embodiments of the invention relate to vertical field effect transistor that is a light emitting transistor. The light emitting transistor incorporates a gate electrode for providing a gate field, a first electrode comprising a dilute nanotube network for injecting a charge, a second electrode for injecting a complementary charge, and an electroluminescent semiconductor layer disposed intermediate the nanotube network and the electron injecting layer. The charge injection is modulated by the gate field. The holes and electrons, combine to form photons, thereby causing the electroluminescent semiconductor layer to emit visible light. In other embodiments of the invention a vertical field effect transistor that employs an electrode comprising a conductive material with a low density of states such that the transistors contact barrier modulation comprises barrier height lowering of the Schottky contact between the electrode with a low density of states and the adjacent semiconductor by a Fermi level shift.
摘要翻译：本发明的实施例涉及作为发光晶体管的垂直场效应晶体管。发光晶体管包括用于提供栅极场的栅电极，包括用于注入电荷的稀释纳米管网络的第一电极，用于注入互补电荷的第二电极以及设置在纳米管网络和电子注入中间的电致发光半导体层层。电荷注入由门电场调制。空穴和电子结合形成光子，从而使电致发光半导体层发射可见光。在本发明的其他实施例中，采用包括具有低密度状态的导电材料的电极的垂直场效应晶体管使得晶体管接触势垒调制包括势垒高度降低具有低密度状态的电极之间的肖特基接触以及相邻的半导体由费米能级移位。

2. 发明申请

WO2009036071A2 NANOTUBE ENABLED, GATE-VOLTAGE CONTROLLED LIGHT EMITTING DIODES 审中-公开
标题翻译： NANOTUBE ENABLED，GATE-VOLTAGE CONTROLLED LED发光二极管
公开(公告)号：WO2009036071A2
公开(公告)日：2009-03-19
申请号：PCT/US2008075866
申请日：2008-09-10
申请人： UNIV FLORIDA , RINZLER ANDREW GABRIEL , LIU BO , MCCARTHY MITCHELL AUSTIN , REYNOLDS JOHN ROBERT , SO FRANKY
发明人： RINZLER ANDREW GABRIEL , LIU BO , MCCARTHY MITCHELL AUSTIN , REYNOLDS JOHN ROBERT , SO FRANKY
IPC分类号： H01L33/00
CPC分类号： H01L51/5296 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01L51/0039 , H01L51/0043 , H01L51/0048 , H01L51/0558 , H01L51/057 , H01L51/102 , H01L51/5203 , Y10S977/701 , Y10S977/742 , Y10S977/762 , Y10S977/767 , Y10S977/932 , Y10S977/936 , Y10S977/937 , Y10S977/938
摘要： Embodiments of the invention relate to vertical field effect transistor that is a light emitting transistor. The light emitting transistor incorporates a gate electrode for providing a gate field, a first electrode comprising a dilute nanotube network for injecting a charge, a second electrode for injecting a complementary charge, and an electroluminescent semiconductor layer disposed intermediate the nanotube network and the electron injecting layer. The charge injection is modulated by the gate field. The holes and electrons, combine to form photons, thereby causing the electroluminescent semiconductor layer to emit visible light. In other embodiments of the invention a vertical field effect transistor that employs an electrode comprising a conductive material with a low density of states such that the transistors contact barrier modulation comprises barrier height lowering of the Schottky contact between the electrode with a low density of states and the adjacent semiconductor by a Fermi level shift.
摘要翻译：本发明的实施例涉及作为发光晶体管的垂直场效应晶体管。发光晶体管包括用于提供栅极场的栅电极，包括用于注入电荷的稀释纳米管网络的第一电极，用于注入互补电荷的第二电极和设置在纳米管网络之间的电致发光半导体层和电子注入层。电荷注入由栅极场调制。空穴和电子结合形成光子，从而使电致发光半导体层发射可见光。在本发明的其它实施例中，采用包括具有低密度状态的导电材料的电极的垂直场效应晶体管，使得晶体管接触势垒调制包括具有低密度状态的电极之间的肖特基接触的势垒高度降低;以及相邻的半导体通过费米能级移位。

3. 发明申请

WO2011109693A3 SEMICONDUCTOR DEVICES INCLUDING AN ELECTRICALLY PERCOLATING SOURCE LAYER AND METHODS OF FABRICATING THE SAME 审中-公开
标题翻译：包括电穿孔源层的半导体器件及其制造方法
公开(公告)号：WO2011109693A3
公开(公告)日：2011-12-29
申请号：PCT/US2011027155
申请日：2011-03-04
申请人： UNIV FLORIDA , RINZLER ANDREW GABRIEL , LIU BO , MCCARTHY MITCHELL AUSTIN
发明人： RINZLER ANDREW GABRIEL , LIU BO , MCCARTHY MITCHELL AUSTIN
IPC分类号： H01L51/00
CPC分类号： H01L51/0545 , B82Y10/00 , H01L51/0048 , H01L51/0541 , H01L51/0566 , H01L51/057 , H01L51/0591
摘要： Various embodiments are provided for semiconductor devices including an electrically percolating source layer and methods of fabricating the same. In one embodiment, a semiconductor device includes a gate layer, a dielectric layer, a memory layer, a source layer, a semiconducting channel layer, and a drain layer. The source layer is electrically percolating and perforated. The semiconducting channel layer is in contact with the source layer and the memory layer. The source layer and the semiconducting channel layer form a gate voltage tunable charge injection barrier.
摘要翻译：提供了包括电渗透源层的半导体器件的各种实施例及其制造方法。在一个实施例中，半导体器件包括栅极层，电介质层，存储层，源极层，半导体沟道层和漏极层。源层被电渗透和穿孔。半导体沟道层与源极层和存储层接触。源极层和半导体沟道层形成栅极电压可调电荷注入势垒。

4. 发明申请

WO2012078759A3 ACTIVE MATRIX DILUTE SOURCE ENABLED VERTICAL ORGANIC LIGHT EMITTING TRANSISTOR 审中-公开
标题翻译：有源矩阵稀释源使能垂直有机发光晶体管
公开(公告)号：WO2012078759A3
公开(公告)日：2012-09-27
申请号：PCT/US2011063745
申请日：2011-12-07
申请人： UNIV FLORIDA , RINZLER ANDREW GABRIEL , MCCARTHY MITCHELL AUSTIN , LIU BO
发明人： RINZLER ANDREW GABRIEL , MCCARTHY MITCHELL AUSTIN , LIU BO
IPC分类号： H01L51/05 , H01L29/786
CPC分类号： H01L51/5203 , B82Y99/00 , H01L27/3262 , H01L27/3274 , H01L29/1606 , H01L29/7827 , H01L51/0045 , H01L51/0048 , H01L51/057 , H01L51/102 , H01L51/5296
摘要： Various embodiments are provided for dilute source enabled vertical organic light emitting transistors. In various embodiments, a display panel includes an array of pixels. In one embodiment, among others, at least one pixel includes a switching transistor and a driving transistor coupled to the switching transistor, where the driving transistor is configured to emit light responsive to activation by the switching transistor. The driving transistor may be a dilute source enabled vertical organic light emitting transistor (DS- VOLET). The switching transistor may include a dilute source enabled vertical-field effect transistor (DS-VFET). In another embodiment, a double dilute source enabled vertical-field effect transistor (DS-VFET) includes a first DS-VFET coupled to a second DS-VFET.
摘要翻译：提供各种实施例用于稀释源使垂直有机发光晶体管。在各种实施例中，显示面板包括像素阵列。在一个实施例中，至少一个像素包括开关晶体管和耦合到开关晶体管的驱动晶体管，其中驱动晶体管被配置为响应于开关晶体管的激活而发光。驱动晶体管可以是稀释源使能的垂直有机发光晶体管（DS-VOLET）。开关晶体管可以包括稀释源极垂直场效应晶体管（DS-VFET）。在另一个实施例中，双稀释源使能垂直场效应晶体管（DS-VFET）包括耦合到第二DS-VFET的第一DS-VFET。

5. 发明申请

WO2013003548A3 MULTIPLE CONTROLLED ELECTROCHROMIC DEVICES FOR VISIBLE AND IR MODULATION 审中-公开
标题翻译：用于可见和红外调制的多个控制的电致发光器件
公开(公告)号：WO2013003548A3
公开(公告)日：2013-04-04
申请号：PCT/US2012044569
申请日：2012-06-28
申请人： UNIV FLORIDA , REYNOLDS JOHN ROBERT , WALCZAK RYAN MICHAEL , RINZLER ANDREW GABRIEL , VASILYEVA SVETLANA , DYER AUBREY LYNN
发明人： REYNOLDS JOHN ROBERT , WALCZAK RYAN MICHAEL , RINZLER ANDREW GABRIEL , VASILYEVA SVETLANA , DYER AUBREY LYNN
IPC分类号： G02F1/15 , E06B9/24
CPC分类号： G02F1/163 , B82Y20/00 , B82Y30/00 , B82Y99/00 , G01J1/0407 , G01J1/44 , G02F1/15 , G02F1/155 , G02F1/157 , G02F2001/1515 , G02F2001/1536 , G02F2201/16 , G02F2201/58 , G02F2202/28 , G02F2202/36 , G02F2203/11 , Y02A30/257 , Y02B80/50 , Y10S977/742
摘要： An electrochromic device (ECD) includes an electrochromic cell and, optionally, one or more additional electrochromic cells where all cells are parallel, and where at least one of the electrodes of one of the cells comprises a single-walled carbon nanotube (SWNT) film. The electrochromic cells allow the control of transmittance of two or more di fferent portions of the electromagnetic spectrum through the ECD. One cell can control the transmittance of visible radiation while the other cell can control the transmittance of IR radiation. The ECD can be employed as a "smart window" to control the heat and light transmission through the window. The ECD can be in the form of a laminate that can be added to an existing window.
摘要翻译：电致变色装置（ECD）包括电致变色电池和任选的一个或多个附加的电致变色细胞，其中所有细胞平行，并且其中一个电池的至少一个电极包括单壁碳纳米管（SWNT）膜。电致变色细胞允许通过ECD控制电磁光谱的两个或更多个不同部分的透射率。一个电池可以控制可见光的透射率，而另一个电池可以控制IR辐射的透射率。 ECD可以用作“智能窗口”来控制通过窗户的热和光透射。 ECD可以是可以添加到现有窗口的层压板的形式。

6. 发明申请

WO2011139754A3 ELECTRONIC GATE ENHANCEMENT OF SCHOTTKY JUNCTION SOLAR CELLS 审中-公开
标题翻译：肖特连接太阳能电池的电子门增强
公开(公告)号：WO2011139754A3
公开(公告)日：2012-02-02
申请号：PCT/US2011034107
申请日：2011-04-27
申请人： UNIV FLORIDA , RINZLER ANDREW GABRIEL , WADHWA POOJA , GUO JING , SEOL GYUNGSEON
发明人： RINZLER ANDREW GABRIEL , WADHWA POOJA , GUO JING , SEOL GYUNGSEON
IPC分类号： H01L31/07 , H01L31/0224 , H01L31/042
CPC分类号： H01L31/022433 , H01L31/07 , Y02E10/50
摘要： Various systems and methods are provided for Schottky junction solar cells. In one embodiment, a solar cell includes a mesh layer formed on a semiconductor layer and an ionic layer formed on the mesh layer. The ionic layer seeps through the mesh layer and directly contacts the semiconductor layer. In another embodiment, a solar cell includes a first mesh layer formed on a semiconductor layer, a first metallization layer coupled to the first mesh layer, a second high surface area electrically conducting electrode coupled to the first metallization layer by a gate voltage, and an ionic layer in electrical communication with the first mesh layer and the second high surface area electrically conducting electrode. In another embodiment, a solar cell includes a grid layer formed on a semiconductor layer and an ionic layer in electrical communication with the grid layer and the semiconductor layer.
摘要翻译：为肖特基结太阳能电池提供了各种系统和方法。在一个实施例中，太阳能电池包括形成在半导体层上的网格层和形成在网格层上的离子层。离子层渗透网格层并直接接触半导体层。在另一个实施例中，太阳能电池包括形成在半导体层上的第一网格层，耦合到第一网格层的第一金属化层，通过栅极电压耦合到第一金属化层的第二高表面积导电电极，以及离子层与第一网格层和第二高表面积导电电极电连通。在另一实施例中，太阳能电池包括形成在半导体层上的栅格层和与栅格层和半导体层电连通的离子层。

7. 发明申请

WO2009023337A2 SUPRAMOLECULAR POLYMERS ASSOCIATIVE TO CARBON NANOTUBES 审中-公开
标题翻译：与碳纳米管相关的分子聚合物
公开(公告)号：WO2009023337A2
公开(公告)日：2009-02-19
申请号：PCT/US2008064146
申请日：2008-05-19
申请人： UNIV FLORIDA , REYNOLDS JOHN R , WALCZAK RYAN M , VAN DER AA EVELINE MARIA , RINZLER ANDREW GABRIEL
发明人： REYNOLDS JOHN R , WALCZAK RYAN M , VAN DER AA EVELINE MARIA , RINZLER ANDREW GABRIEL
CPC分类号： C08G18/73 , B29C73/163 , B29C73/22 , B82Y30/00 , C08G18/2865 , C08J5/005
摘要： A supramolecular polymer and its composite with carbon nanotubes, CNTs, are described. The supramolecular polymer is an ensemble of precursors that independently contain "sticky feet" for non-covalent binding to carbon nanotube surfaces and associative groups. There is at least one of the associative groups covalently bound to each of the precursor and there is at least one covalently connecting moiety connecting associative groups within a precursor or connecting an associative group to a linker to a "sticky foot" in a precursor. When the associative groups are in a dissociative state, the supramolecular polymer precursors and CNTs can be combined to form a dispersion. Upon promotion, the dissociated associative groups in the dispersion can associate to yield a CNT/supramolecular polymer composite.
摘要翻译：描述了超分子聚合物及其与碳纳米管，CNT的复合物。超分子聚合物是独立包含用于非共价结合碳纳米管表面和缔合基团的“粘性脚”的前体的组合。至少有一个共价基团与每个前体共价结合，并且存在至少一个共价连接部分，其连接前体内的缔合基团或将缔合基团连接到前体中的“粘性脚”。当缔合基团处于解离状态时，可以将超分子聚合物前体和CNT组合形成分散体。促进时，分散体中的离解的缔合基团可以缔合以产生CNT /超分子聚合物复合物。

8. 发明申请

WO2012083209A3 HYDROGEN OXIDATION AND GENERATION OVER CARBON FILMS 审中-公开
标题翻译：氢氧化和生成碳膜
公开(公告)号：WO2012083209A3
公开(公告)日：2013-01-17
申请号：PCT/US2011065569
申请日：2011-12-16
申请人： UNIV FLORIDA , RINZLER ANDREW GABRIEL , DAS RAJIB KUMAR
发明人： RINZLER ANDREW GABRIEL , DAS RAJIB KUMAR
IPC分类号： H01M4/90 , B82B3/00 , H01L31/042 , H01M4/88 , H01M8/04
CPC分类号： H01M8/0656 , C25B11/12 , H01M4/8615 , H01M4/8825 , H01M4/90 , H01M4/96 , H01M8/0234 , H01M8/0239 , H01M8/186 , H01M2250/10 , H01M2250/402 , Y02B90/12 , Y02B90/14 , Y02E60/528 , Y02P20/133
摘要： An electrode comprises an acid treated, cathodically cycled carbon-comprising film or body. The carbon consists of single walled nanotubes (SWNTs), pyrolytic graphite, microcrystalline graphitic, any carbon that consists of more than 99% sp2 hybridized carbons, or any combination thereof. The electrode can be used in an electrochemical device functioning as an electrolyser for evolution of hydrogen or as a fuel cell for oxidation of hydrogen. The electrochemical device can be coupled as a secondary energy generator into a system with a primary energy generator that naturally undergoes generation fluctuations. During periods of high energy output, the primary source can power the electrochemical device to store energy as hydrogen, which can be consumed to generate electricity as the secondary source during low energy output by the primary source. Solar cells, wind turbines and water turbines can act as the primary energy source.
摘要翻译：电极包括酸处理的，阴极循环的含碳膜或体。碳由单壁纳米管（SWNT），热解石墨，微晶石墨，由超过99％的sp2杂化碳组成的任何碳或其任何组合组成。该电极可以用作电化学装置，其用作用于氢的放出的电解器或用作氢的氧化的燃料电池。电化学装置可以作为二次能量发生器耦合到具有自然经历发电波动的一次能量发生器的系统中。在高能量输出期间，主要来源可以为电化学装置供电以将能量存储为氢，在主要来源的低能量输出期间可以消耗电能作为次级源。太阳能电池，风力涡轮机和水轮机可以作为主要的能源。

9. 发明申请

WO2010126767A2 SINGLE WALL CARBON NANOTUBE BASED AIR CATHODES 审中-公开
标题翻译：单壁碳纳米管空气阴极
公开(公告)号：WO2010126767A2
公开(公告)日：2010-11-04
申请号：PCT/US2010031995
申请日：2010-04-22
申请人： UNIV FLORIDA RES FOND INC , RINZLER ANDREW GABRIEL , DAS RAJIB KUMAR , REYNOLDS JOHN R , WALCZAK RYAN M
发明人： RINZLER ANDREW GABRIEL , DAS RAJIB KUMAR , REYNOLDS JOHN R , WALCZAK RYAN M
IPC分类号： H01M12/06 , B82B3/00 , H01M8/02
CPC分类号： H01M4/8673 , H01M4/8605 , H01M4/8657 , H01M4/8668 , H01M8/1007 , H01M8/1011 , H01M12/06 , H01M2008/1095 , Y02E60/523 , Y10T29/49124
摘要： An embodiment of the invention is an air cathode having a porous membrane with at least one hydrophobic surface that contacts a conductive catalytic film that comprises single walled carbon nanotubes (SWNTs) where the nanotubes are in intimate electrical contact. The conductive film can include fullerenes, metals, metal alloys, metal oxides, or electroactive polymers in addition to the SWNTs. In other embodiments of the invention the air cathode is a component of a metal-air battery or a fuel cell.
摘要翻译：本发明的一个实施方案是具有多孔膜的空气阴极，该多孔膜具有至少一个疏水表面，该疏水性表面与包含纳米管紧密电接触的单壁碳纳米管（SWNT）的导电催化膜相接触。除了SWNT之外，导电膜可以包括富勒烯，金属，金属合金，金属氧化物或电活性聚合物。在本发明的其它实施例中，空气阴极是金属 - 空气电池或燃料电池的组件。

10. 发明申请

WO2007035838A3 LOW TEMPERATURE METHODS FOR FORMING PATTERNED ELECTRICALLY CONDUCTIVE THIN FILMS AND PATTERNED ARTICLES THEREFROM 审中-公开
标题翻译：用于形成图形导电薄膜的低温方法及其中的图案
公开(公告)号：WO2007035838A3
公开(公告)日：2007-06-21
申请号：PCT/US2006036723
申请日：2006-09-21
申请人： UNIV FLORIDA , RINZLER ANDREW GABRIEL , WU ZHUANGCHUN
发明人： RINZLER ANDREW GABRIEL , WU ZHUANGCHUN
IPC分类号： H01L51/00
CPC分类号： H01L51/0048 , B82Y10/00 , H01L51/0004 , H01L51/0005 , H01L51/0021 , Y10S438/962 , Y10S977/892 , Y10S977/893
摘要： A method of forming patterned thin films includes the steps of providing a porous membrane and a solution including a plurality of solid constituents and at least one surface stabilizing agent for preventing the solid constituents from flocculating out of suspension. The solution is dispensed onto a surface of the membrane. The solution is then removed by filtration through the membrane, wherein a patterned film coated membrane comprising a plurality of primarily spaced apart patterned regions are formed on the membrane. In one embodiment the method further includes the step of blocking liquid passage through selected portions of the membrane to form a plurality of open membrane portions and a plurality of blocked membrane portions before the dispensing step. The dispensing step includes ink jet printing the solution. An article having a patterned nanotube-including film thereon includes a substrate, and a patterned nanotube including film disposed on the substrate. The film includes a plurality of primarily spaced apart patterned regions, wherein nano tubes in the film are preferentially aligned parallel to a long direction of the patterned regions. The preferential alignment is generally most pronounced towards an edge of the patterned regions.
摘要翻译：形成图案化薄膜的方法包括提供多孔膜和包含多种固体成分的溶液和至少一种用于防止固体成分从悬浮液中絮凝的表面稳定剂的步骤。将溶液分配到膜的表面上。然后通过膜通过过滤除去溶液，其中在膜上形成包含多个主要间隔开的图案化区域的图案化膜包衣膜。在一个实施例中，该方法还包括阻止液体通过膜的选定部分的步骤，以在分配步骤之前形成多个开放的膜部分和多个封闭的膜部分。分配步骤包括喷墨印刷溶液。在其上具有图案化的纳米管的膜的物品包括基板和设置在基板上的包含膜的图案化纳米管。膜包括多个主要间隔开的图案化区域，其中膜中的纳米管优选地平行于图案化区域的长方向排列。优先对准通常对于图案化区域的边缘最显着。

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