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1. 发明申请

WO2003030219A2 HIGH PRESSURE PROCESSING CHAMBER FOR MULTIPLE SEMICONDUCTOR SUBSTRATES 审中-公开
标题翻译：用于多个半导体基板的高压加工室
公开(公告)号：WO2003030219A2
公开(公告)日：2003-04-10
申请号：PCT/US2002/031710
申请日：2002-10-03
申请人： SUPERCRITICAL SYSTEMS INC.
发明人： BIBERGER, Maximilian, A. , LAYMAN, Frederick, P.
IPC分类号： H01L
CPC分类号： H01L21/67303 , B08B7/0021 , H01L21/67051 , H01L21/67057 , H01L21/67309
摘要： A high pressure processing chamber for processing multiple semiconductor substrates I comprises a chamber housing, a cassette, and a chamber closure. The cassette is removably coupled to the chamber housing. The cassette is configured to accommodate at least two semiconductor substrates. The chamber closure is coupled to the chamber housing. The chamber closure is configured such that in operation the chamber closure seals with the chamber housing to provide an enclosure for high pressure processing of the semicon ductor substrates.
摘要翻译：用于处理多个半导体衬底I的高压处理室包括腔室壳体，盒子和腔室封闭件。盒可移除地联接到室壳体。盒被配置成容纳至少两个半导体衬底。腔室封闭件联接到腔室壳体。腔室闭合构造成使得在操作中，腔室封闭件与腔室壳体密封以提供用于半导体衬底基底的高压处理的外壳。

2. 发明申请

WO2002084709A3 HIGH PRESSURE PROCESSING CHAMBER FOR SEMICONDUCTOR SUBSTRATE INCLUDING FLOW ENHANCING FEATURES 审中-公开
公开(公告)号：WO2002084709A3
公开(公告)日：2002-10-24
申请号：PCT/US2002/011461
申请日：2002-04-10
申请人： SUPERCRITICAL SYSTEMS INC.
发明人： BIBERGER, Maximilian, A. , LAYMAN, Frederick, P. , SUTTON, Thomas, R.
IPC分类号： C23F1/00
摘要： A high pressure chamber for processing of a semiconductor substrate comprises a high pressure processing cavity, a plurality of injection nozzles, and first and second outlet ports. The high pressure processing cavity holds the semiconductor substrate during high pressure processing. The plurality of injection nozzles are oriented into the high pressure processing cavity at a vortex angle and are operable to produce a vortex over a surface of the semiconductor substrate. The first and second outlet ports are located proximate to a center of the plurality of injection nozzles and are operable in a first time segment to provide an operating outlet out of the first outlet port and operable in a second time segment to provide the operating outlet out of the second outlet port. In an alternative embodiment, an upper surface of the high pressure processing cavity comprises a height variation. The height variation produces more uniform molecular speeds for a process fluid flowing over the semiconductor substrate.

3. 发明申请

WO2003030219A3 HIGH PRESSURE PROCESSING CHAMBER FOR MULTIPLE SEMICONDUCTOR SUBSTRATES 审中-公开
公开(公告)号：WO2003030219A3
公开(公告)日：2003-04-10
申请号：PCT/US2002/031710
申请日：2002-10-03
申请人： SUPERCRITICAL SYSTEMS INC.
发明人： BIBERGER, Maximilian, A. , LAYMAN, Frederick, P.
IPC分类号： C23C16/00
摘要： A high pressure processing chamber for processing multiple semiconductor substrates I comprises a chamber housing, a cassette, and a chamber closure. The cassette is removably coupled to the chamber housing. The cassette is configured to accommodate at least two semiconductor substrates. The chamber closure is coupled to the chamber housing. The chamber closure is configured such that in operation the chamber closure seals with the chamber housing to provide an enclosure for high pressure processing of the semicon ductor substrates.

4. 发明申请

WO2002084709A2 HIGH PRESSURE PROCESSING CHAMBER FOR SEMICONDUCTOR SUBSTRATE INCLUDING FLOW ENHANCING FEATURES 审中-公开
标题翻译：用于半导体基板的高压加工室，包括流动增强特性
公开(公告)号：WO2002084709A2
公开(公告)日：2002-10-24
申请号：PCT/US2002/011461
申请日：2002-04-10
申请人： SUPERCRITICAL SYSTEMS INC.
发明人： BIBERGER, Maximilian, A. , LAYMAN, Frederick, P. , SUTTON, Thomas, R.
IPC分类号： H01L
CPC分类号： H01L21/67051 , B08B3/02 , H01L21/67017 , H01L21/67069 , H01L21/6708 , H01L21/67126 , H01L21/6715
摘要： A high pressure chamber for processing of a semiconductor substrate comprises a high pressure processing cavity, a plurality of injection nozzles, and first and second outlet ports. The high pressure processing cavity holds the semiconductor substrate during high pressure processing. The plurality of injection nozzles are oriented into the high pressure processing cavity at a vortex angle and are operable to produce a vortex over a surface of the semiconductor substrate. The first and second outlet ports are located proximate to a center of the plurality of injection nozzles and are operable in a first time segment to provide an operating outlet out of the first outlet port and operable in a second time segment to provide the operating outlet out of the second outlet port. In an alternative embodiment, an upper surface of the high pressure processing cavity comprises a height variation. The height variation produces more uniform molecular speeds for a process fluid flowing over the semiconductor substrate.
摘要翻译：用于处理半导体衬底的高压室包括高压处理腔，多个注射喷嘴以及第一和第二出口。高压处理腔在高压处理期间保持半导体衬底。多个注射喷嘴以涡旋角度定向到高压处理空腔中，并且可操作以在半导体衬底的表面上产生涡流。第一和第二出口端口位于多个注射喷嘴的中心附近，并且可在第一时间段中操作以将操作出口提供出第一出口端口并且可在第二时间段中操作以将操作出口的第二个出口。在替代实施例中，高压处理腔的上表面包括高度变化。高度变化对流过半导体衬底的工艺流体产生更均匀的分子速度。

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