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1. 发明申请

WO2012040688A3 HIGH-THROUGHPUT BATCH POROUS SILICON MANUFACTURING EQUIPMENT DESIGN AND PROCESSING METHODS 审中-公开
标题翻译：高产量批量多孔硅制造设备的设计和加工方法
公开(公告)号：WO2012040688A3
公开(公告)日：2012-08-16
申请号：PCT/US2011053183
申请日：2011-09-24
申请人： SOLEXEL INC , YONEHARA TAKAO , TAMILMANI SUBRAMANIAN , KRAMER KARL-JOSEF , ASHJAEE JAY , MOSLEHI MEHRDAD M , MIYAJI YASUHIRO , HAYASHI TOKUYUKI , INAHARA TAKAMITSU
发明人： YONEHARA TAKAO , TAMILMANI SUBRAMANIAN , KRAMER KARL-JOSEF , ASHJAEE JAY , MOSLEHI MEHRDAD M , MIYAJI YASUHIRO , HAYASHI TOKUYUKI , INAHARA TAKAMITSU
IPC分类号： H01L21/306
CPC分类号： C25F3/12 , C25D11/005 , C25D11/32 , C25D17/001 , C25D17/06 , C25F7/00
摘要： This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
摘要翻译：本公开使得可以高生产率地制造多孔半导体层（由单层或多层多孔半导体制成，例如多孔硅，包括单孔隙或多孔隙层）。一些应用包括用于管芯分离和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅（使用具有最佳孔隙率及其随后的氧化的多孔硅形成）的MEMS分离和牺牲层的制造。此外，本公开适用于光伏，MEMS的一般领域，包括传感器和致动器，独立或与集成半导体微电子学，半导体微电子学芯片和光电子集成。

2. 发明申请

WO2013126033A3 APPARATUS AND METHODS FOR UNIFORMLY FORMING POROUS SEMICONDUCTOR ON A SUBSTRATE 审中-公开
标题翻译：在基板上均匀形成多孔半导体的装置和方法
公开(公告)号：WO2013126033A3
公开(公告)日：2013-10-17
申请号：PCT/US2011059177
申请日：2011-11-03
申请人： SOLEXEL INC , KRAMER KARL-JOSEF , MOSLEHI MEHRDAD M , TAMILMANI SUBRAMANIAN , KAMIAN GEORGE , ASHJAEE JAY , YONEHARA TAKAO
发明人： KRAMER KARL-JOSEF , MOSLEHI MEHRDAD M , TAMILMANI SUBRAMANIAN , KAMIAN GEORGE , ASHJAEE JAY , YONEHARA TAKAO
IPC分类号： H01L21/3063 , H01L21/02 , H01L21/306
CPC分类号： B81C99/0025 , B81C2201/0115 , C25D11/005 , C25D11/32 , C25D17/001 , C25D17/06 , C25F3/12 , C25F7/00 , H01L21/306 , H01L31/0284 , H01L31/18
摘要： This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
摘要翻译：本公开使得能够高生产率控制制造均匀的多孔半导体层（由单层或多层多孔半导体（例如多孔硅，包括单孔隙或多孔层）制成）。一些应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率的多孔硅形成及其随后的氧化）。此外，本公开适用于光伏技术的MEMS领域，包括传感器和执行器，独立的或与集成半导体微电子，半导体微电子芯片和光电子集成。

3. 发明申请

WO2011156657A3 HIGH PRODUCTIVITY THIN FILM DEPOSITION METHOD AND SYSTEM 审中-公开
标题翻译：高生产率薄膜沉积方法和系统
公开(公告)号：WO2011156657A3
公开(公告)日：2012-06-28
申请号：PCT/US2011039877
申请日：2011-06-09
申请人： SOLEXEL INC , KRAMER KARL JOSEF , ASHJAEE JAY , MOSLEHI MEHRDAD M , KAMIAN GEORGE D , MORDO DAVID , YONEHARA TAKAO
发明人： KRAMER KARL JOSEF , ASHJAEE JAY , MOSLEHI MEHRDAD M , KAMIAN GEORGE D , MORDO DAVID , YONEHARA TAKAO
IPC分类号： H01L21/205 , H01L21/20
CPC分类号： H01L21/67754 , C23C16/45585 , C23C16/481 , C23C16/54 , H01L21/02532 , H01L21/0262 , H01L21/6719 , H01L21/67757
摘要： High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.
摘要翻译：提供了高生产率薄膜沉积方法和工具，其中厚度在小于1微米至100微米范围内的薄膜半导体材料层沉积在反应器中的多个晶片上。将晶片装载在分批基座上，批量基座位于反应器中，使得在基座和反应器的内壁之间产生锥形气体流动空间。然后将反应性气体引导到锥形气体空间中并遍及每个晶片，从而改善每个晶片和从晶片到晶片的沉积均匀性。

4. 发明申请

WO2011100647A2 DOUBLE-SIDED REUSABLE TEMPLATE FOR FABRICATION OF SEMICONDUCTOR SUBSTRATES FOR PHOTOVOLTAIC CELL AND MICROELECTRONICS DEVICE MANUFACTURING 审中-公开
标题翻译：用于制造用于光电晶体和微电子器件制造的半导体衬底的双面可重复模板
公开(公告)号：WO2011100647A2
公开(公告)日：2011-08-18
申请号：PCT/US2011024670
申请日：2011-02-12
申请人： SOLEXEL INC , MOSLEHI MEHRDAD M , KRAMER KARL-JOSEF , WANG DAVID XUAN-QI , KAPUR PAWAN , NAG SOMNATH , KAMIAN GEORGE , ASHJAEE JAY , YONEHARA TAKAO
发明人： MOSLEHI MEHRDAD M , KRAMER KARL-JOSEF , WANG DAVID XUAN-QI , KAPUR PAWAN , NAG SOMNATH , KAMIAN GEORGE , ASHJAEE JAY , YONEHARA TAKAO
IPC分类号： H01L31/042 , H01L21/20 , H01L21/306 , H01L31/18
CPC分类号： H01L21/20 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： This disclosure presents manufacturing methods and apparatus designs for making TFSSs from both sides of a re -usable semiconductor template, thus effectively increasing the substrate manufacturing throughput and reducing the substrate manufacturing cost. This approach also reduces the amortized starting template cost per manufactured substrate (TFSS) by about a factor of 2 for a given number of template reuse cycles.
摘要翻译：本公开提供了从可再利用的半导体模板的两侧制造TFSS的制造方法和装置设计，从而有效地增加了基板制造的吞吐量并降低了基板的制造成本。对于给定数量的模板重用周期，这种方法还将每个制造的衬底（TFSS）的平均起始模板成本降低约2倍。

5. 发明申请

WO2005045492A3 METHOD FOR FABRICATION OF OPTICAL ELEMENT, AND OPTICAL ELEMENT HAVING THREE-DIMENSIONAL LAMINATED STRUCTURE 审中-公开
标题翻译：光学元件的制造方法和具有三维层压结构的光学元件
公开(公告)号：WO2005045492A3
公开(公告)日：2006-01-05
申请号：PCT/JP2004016901
申请日：2004-11-08
申请人： CANON KK , SUGITA MITSURO , YONEHARA TAKAO
发明人： SUGITA MITSURO , YONEHARA TAKAO
IPC分类号： G02B1/02 , G02B6/12 , G02B6/122 , G02B6/13 , G02B6/136 , G02B6/14 , H01S3/06 , H01S3/08 , H01S5/026 , H01S5/04 , H01S5/10 , H01S5/183 , H01S5/42 , G09F9/33 , H01S5/00
CPC分类号： B82Y20/00 , G02B6/12 , G02B6/12002 , G02B6/1225 , G02B6/13 , G02B6/136 , G02B6/14
摘要： A method for production of an optical element includes preparing a first member having formed on the surface of a first substrate 101 a first layer 103 having at least one of epitaxial growth and pores-making (micropores-making) and a second member having a porous layer for layer separation formed on a second substrate 104 and having formed thereon a second layer having at least one of epitaxial growth and pores-making (micropores-making), bonding the first layer 103 of the first member and the second layer of the second member together, separating the second substrate 104 and the second layer of the second member from each other in the porous layer for layer separation in the second member, to form a laminated structure on the first substrate 101, forming a refraction index distribution pattern produced by a difference in refraction index in the plane of at least one of the first layer 103 and the second layer.
摘要翻译：一种制造光学元件的方法包括制备在第一衬底101的表面上形成具有至少一种外延生长和制孔的第一层103（微孔制造）的第一构件和具有多孔层间分离形成在第二基板104上并且在其上形成有具有外延生长和制孔（微孔制造）中的至少一个的第二层，将第一部件的第一层103和第二部分的第二层构件一起在第二构件中在多孔层中分离第二基板104和第二层以进行层间分离，以在第一基板101上形成层压结构，形成折射率分布图案，其由第一层103和第二层中的至少一个的平面中的折射率差异。

6. 发明申请

WO2009133962A3 LIGHT-EMITTING UNIT 审中-公开
标题翻译：发光单元
公开(公告)号：WO2009133962A3
公开(公告)日：2009-12-23
申请号：PCT/JP2009058723
申请日：2009-04-28
申请人： CANON KK , YONEHARA TAKAO
发明人： YONEHARA TAKAO
IPC分类号： B41J2/45 , H01L33/48 , H01L33/58 , H01L33/64
CPC分类号： B41J2/451
摘要： A light-emitting unit having an arrayed light source (1700) comprises a substrate (1600); an arrayed light source group containing the arrayed light source arranged in a first direction (2000); a lens array (1500) for focusing the light emitted from light emitting elements constituting the arrayed light source; and a lens support (1400) having a cavity formed between arrayed light source group and the lens array; the lens support having a first hole (1406) for introducing a fluid into the cavity, and a second hole (1405) for discharging the introduced fluid in a second direction (2050) crossing the first direction.
摘要翻译：具有阵列光源（1700）的发光单元包括基板（1600）; 包含沿第一方向排列的排列光源的排列光源组（2000）; 用于聚焦从构成排列光源的发光元件发出的光的透镜阵列（1500）以及在排列的光源组和透镜阵列之间形成有空腔的透镜支架（1400）透镜支架具有用于将流体引入空腔的第一孔（1406）和用于沿与第一方向交叉的第二方向（2050）排出引入流体的第二孔（1405）。

7. 发明申请

WO2011033758A3 SUBSTRATE STRUCTURE INCLUDING FUNCTIONAL REGION AND METHOD FOR TRANSFERRING FUNCTIONAL REGION 审中-公开
标题翻译：基层结构，包括功能区域和转移功能区域的方法
公开(公告)号：WO2011033758A3
公开(公告)日：2011-07-14
申请号：PCT/JP2010005598
申请日：2010-09-14
申请人： CANON KK , YONEHARA TAKAO
发明人： YONEHARA TAKAO
IPC分类号： H01L33/00 , B41J2/45 , H01L21/68
CPC分类号： B41J2/45 , H01L21/187 , H01L33/0079 , H01L2924/00013 , H01L2924/01057 , H01L2924/3025 , Y10T428/24802 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599
摘要： According to a method for transferring a functional region (101, 102), at least part of functional regions (101, 102) on separation layers (105) arranged on a first substrate (103) is transferred onto a second substrate (100), the separation layers (105) being capable of being brought into a separable state by treatment. In a first bonding step, the first substrate (103) is bonded to the second substrate (100) with a dry film resist (115) arranged between the second substrate (100) and the at least part of the functional regions (101, 102) above the first substrate (103). In an exposure step, at least part of the dry film resist (115) is exposed. In a patterning step, the exposed dry film resist (115) is patterned.
摘要翻译：根据用于转移功能区域（101,102）的方法，将布置在第一衬底（103）上的分离层（105）上的功能区域（101,102）的至少一部分转移到第二衬底（100）上，分离层（105）能够通过处理成为可分离状态。在第一接合步骤中，第一衬底（103）用布置在第二衬底（100）和至少部分功能区域（101,102）之间的干膜抗蚀剂（115）结合到第二衬底（100））在第一基板（103）之上。在曝光步骤中，暴露干膜抗蚀剂（115）的至少一部分。在图案化步骤中，对曝光的干膜抗蚀剂（115）进行图案化。

8. 发明申请

WO2010116698A3 METHOD OF MANUFACTURING SEMICONDUCTOR CHIP 审中-公开
标题翻译：制造半导体芯片的方法
公开(公告)号：WO2010116698A3
公开(公告)日：2011-01-06
申请号：PCT/JP2010002446
申请日：2010-04-02
申请人： CANON KK , YONEHARA TAKAO , SAKAGUCHI KIYOFUMI , KAWASE NOBUO , NAKAGAWA KENJI
发明人： YONEHARA TAKAO , SAKAGUCHI KIYOFUMI , KAWASE NOBUO , NAKAGAWA KENJI
IPC分类号： H01L21/68 , H01L25/065
CPC分类号： H01L25/0657 , H01L21/6835 , H01L24/94 , H01L2221/68318 , H01L2221/6835 , H01L2224/16145 , H01L2225/06513 , H01L2225/06541 , H01L2225/06548 , H01L2924/13091 , H01L2924/14 , H01L2924/30105 , H01L2924/3025 , H01L2924/00
摘要： A method of manufacturing a semiconductor chip including an integrated circuit and a through-electrode penetrating a semiconductor layer includes the steps of preparing a first substrate including a release layer and a semiconductor layer formed on the release layer; forming an integrated circuit in the semiconductor layer; forming, in the semiconductor layer, a hole or groove having a depth that does not reach the release layer; filling the hole or the groove with an electrical conductor; bonding a second substrate to the semiconductor layer to form a bonded structure; separating the bonded structure at the release layer to prepare the second substrate to which the semiconductor layer is transferred; and removing at least a portion of the reverse surface side of the semiconductor layer exposed by the separation to expose the bottom of the electrical conductor.
摘要翻译：制造包括集成电路和穿透半导体层的贯通电极的半导体芯片的方法包括以下步骤：制备包括在剥离层上形成的剥离层和半导体层的第一基板; 在半导体层中形成集成电路; 在所述半导体层中形成具有未到达所述剥离层的深度的孔或槽; 用电导体填充孔或槽; 将第二衬底接合到所述半导体层以形成接合结构; 在剥离层分离结合结构，制备半导体层转移到其上的第二基板; 以及去除通过分离而暴露的半导体层的反面的至少一部分，以露出电导体的底部。

9. 发明申请

WO2010116694A3 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：WO2010116694A3
公开(公告)日：2010-12-16
申请号：PCT/JP2010002426
申请日：2010-04-02
申请人： CANON KK , SAKAGUCHI KIYOFUMI , YONEHARA TAKAO , KAWASE NOBUO , NAKAGAWA KENJI
发明人： SAKAGUCHI KIYOFUMI , YONEHARA TAKAO , KAWASE NOBUO , NAKAGAWA KENJI
IPC分类号： H01L21/98 , H01L21/56 , H01L21/68 , H01L21/762 , H01L21/78 , H01L25/065
CPC分类号： H01L25/0657 , H01L21/563 , H01L21/6835 , H01L21/78 , H01L24/12 , H01L24/16 , H01L24/90 , H01L24/94 , H01L24/97 , H01L25/50 , H01L2221/68318 , H01L2221/68363 , H01L2221/68377 , H01L2224/05573 , H01L2224/13025 , H01L2224/16145 , H01L2224/32145 , H01L2224/73203 , H01L2224/90 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01079 , H01L2924/014 , H01L2924/13091 , H01L2924/14 , H01L2924/30105 , H01L2924/3025 , H01L2224/81 , H01L2924/00 , H01L2224/05599
摘要： A method of manufacturing a semiconductor device includes the steps of forming a plurality of first integrated circuits on the surface side of a first semiconductor substrate; forming a plurality of second integrated circuits in a semiconductor layer that is formed on a release layer provided on a second semiconductor substrate; bonding the two semiconductor substrates so that electrically bonding portions are bonded to each other to form a bonded structure; separating the second semiconductor substrate from the bonded structure at the release layer to transfer, to the first semiconductor substrate, the semiconductor layer in which the plurality of second integrated circuits are formed; and dicing the first semiconductor substrate to obtain stacked chips each including the first integrated circuit and the second integrated circuit.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在第一半导体衬底的表面侧上形成多个第一集成电路; 在设置在第二半导体衬底上的释放层上形成的半导体层中形成多个第二集成电路; 接合两个半导体基板，使得电接合部分彼此接合以形成接合结构; 在释放层处将第二半导体衬底与接合结构分离，以将形成有多个第二集成电路的半导体层转移到第一半导体衬底; 以及切割所述第一半导体衬底以获得各自包括所述第一集成电路和所述第二集成电路的堆叠芯片。

10. 发明申请

WO2013126927A3 SYSTEMS AND METHODS FOR LASER SPLITTING AND DEVICE LAYER TRANSFER 审中-公开
标题翻译：用于激光分割和器件层传输的系统和方法
公开(公告)号：WO2013126927A3
公开(公告)日：2013-11-21
申请号：PCT/US2013027826
申请日：2013-02-26
申请人： SOLEXEL INC
发明人： YONEHARA TAKAO , RANA VIRENDRA V , SEUTTER SEAN , MOSLEHI MEHRDAD M , TAMILMANI SUBRAMANIAN
IPC分类号： H01L21/301 , B23K26/00 , H01L21/268
CPC分类号： H01L21/7813 , B23K26/0006 , B23K26/0054 , B23K26/0057 , B23K26/0093 , B23K26/0622 , B23K26/082 , B23K26/0869 , B23K26/244 , B23K26/702 , B23K2201/40 , B23K2203/52 , B42D25/00 , B81C1/0038 , B81C1/0088 , B81C2201/0192 , B81C2201/0194 , H01L21/268 , H01L21/304 , H01L21/76254 , H01L21/76259 , H01L25/0657 , H01L31/022441 , H01L31/0682 , H01L31/1892 , H01L33/0079 , H01L33/0095 , H01L2224/32145 , H01L2224/32245 , H01L2224/48091 , H01L2224/48145 , H01L2224/48247 , H01L2224/49107 , H01L2224/73265 , H01L2924/13091 , H01L2924/1461 , Y02E10/547 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.
摘要翻译：提供的方法和系统用于使用激光照射从较厚的施主晶片分离和分离含有光学，光电，电子，微电子机械系统（MEMS）或光电子器件的期望厚度的结晶半导体材料的层。

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