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1. 发明申请

WO2015031912A1 MONOLITHIC SOLAR CELL ARRAYS AND FABRICATION METHODS 审中-公开
标题翻译：单晶太阳能电池阵列和制造方法
公开(公告)号：WO2015031912A1
公开(公告)日：2015-03-05
申请号：PCT/US2014/053759
申请日：2014-09-02
申请人： SOLEXEL, INC. , MOSLEHI, Mehrdad, M. , KRAMER, Karl-Josef , STALCUP, Thom , WINGERT, Michael , ASHJAEE, Jay , KAPUR, Pawan , FATEMI, Homi
发明人： MOSLEHI, Mehrdad, M. , KRAMER, Karl-Josef , STALCUP, Thom , WINGERT, Michael , ASHJAEE, Jay , KAPUR, Pawan , FATEMI, Homi
IPC分类号： H01L31/04 , H01L31/18
CPC分类号： H01L31/0465 , H01L31/02245 , H01L31/0516 , H01L31/0682 , Y02E10/547
摘要： Solar cell array solutions including monolithic solar cell arrays and fabrication methods. A first patterned cell metallization contacts base and emitter regions of each of a plurality of solar cells having a light receiving frontside and a backside. An electrically insulating continuous backplane layer is attached to the backside of the solar cells and covers the first cell metallization of each of the solar cells. Via holes through the continuous backplane layer provide access to the first cell metallization. A second cell metallization is connected to the first cell metallization of each of the solar cells and electrically interconnects the solar cells in the array.
摘要翻译：太阳能电池阵列解决方案，包括单片太阳能电池阵列和制造方法。第一图案化电池金属化接触具有光接收前侧和后侧的多个太阳能电池中的每一个的基极和发射极区域。电绝缘的连续背板层连接到太阳能电池的背面并且覆盖每个太阳能电池的第一电池金属化。穿过连续背板层的通孔提供对第一电池金属化的访问。第二电池金属化连接到每个太阳能电池的第一电池金属化，并将阵列中的太阳能电池电互连。

2. 发明申请

WO2013075144A1 SMART PHOTOVOLTAIC CELLS AND MODULES 审中-公开
标题翻译： SMART光伏电池和模块
公开(公告)号：WO2013075144A1
公开(公告)日：2013-05-23
申请号：PCT/US2012/066150
申请日：2012-11-20
申请人： SOLEXEL, INC. , MOSLEHI, Mehrdad, M. , WINGERT, Michael
发明人： MOSLEHI, Mehrdad, M. , WINGERT, Michael
IPC分类号： H01L31/042 , G05F1/67
CPC分类号： H01L31/0516 , H01L27/1421 , H01L31/02021 , H01L31/022441 , H01L31/0504 , H01L31/0725 , H02S40/32 , Y02E10/50
摘要： A back contact solar cell with on-cell electronics is provided. The back contact solar cell is comprised of a semiconductor substrate having a light capturing front side and a backside opposite the light capturing front side. A first interdigitated metallization pattern is positioned on the backside of the semiconductor substrate and a backplane supports and is attached to the backside of the semiconductor substrate. A second interdigitated metallization pattern positioned on the backplane and is connected to the first interdigitated metallization pattern. An on-cell electronic component is attached to the second interdigitated metallization pattern and electrical leads connect the on-cell electronic component to the second interdigitated metallization pattern.
摘要翻译：提供带有电池电子元件的背接触太阳能电池。背接触太阳能电池由具有光捕获前侧和与光捕获正面相反的背面的半导体基板组成。第一交叉金属化图案位于半导体衬底的背面，并且背板支撑并附着到半导体衬底的背面。位于背板上的第二叉指金属化图案，并连接到第一叉指金属化图案。电池单元电子元件附接到第二叉指金属化图案，并且电引线将电池单元电子元件连接到第二叉指金属化图案。

3. 发明申请

WO2011072179A2 HIGH-EFFICIENCY PHOTOVOLTAIC BACK-CONTACT SOLAR CELL STRUCTURES AND MANUFACTURING METHODS USING SEMICONDUCTOR WAFERS 审中-公开
标题翻译：高效光伏反接触太阳能电池结构和使用半导体波形的制造方法
公开(公告)号：WO2011072179A2
公开(公告)日：2011-06-16
申请号：PCT/US2010/059783
申请日：2010-12-09
申请人： SOLEXEL, INC. , MOSLEHI, Mehrdad, M. , KAPUR, Pawan , KRAMER, Karl-josef , WANG, David, Xuan-qi , SEUTTER, Sean , RANA, Virendra, V. , CALCATERRA, Anthony , VAN KERSCHAVER, Emmanuel , HARWOOD, Duncan , MANSOORI, Majid , WINGERT, Michael
发明人： MOSLEHI, Mehrdad, M. , KAPUR, Pawan , KRAMER, Karl-josef , WANG, David, Xuan-qi , SEUTTER, Sean , RANA, Virendra, V. , CALCATERRA, Anthony , VAN KERSCHAVER, Emmanuel , HARWOOD, Duncan , MANSOORI, Majid , WINGERT, Michael
IPC分类号： H01L31/042 , H01L31/0216
CPC分类号： H01L31/0236 , H01L31/0201 , H01L31/02167 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/03921 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/1892 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A back contact back junction solar cell using semiconductor wafers and methods for manufacturing are provided. The back contact back junction solar cell comprises a semiconductor wafer having a doped base region, a light capturing front side surface, and a doped backside emitter region. A front side and backside dielectric layer and passivation layer provide enhance light trapping and internal reflection. Backside base and emitter contacts are connected to metal interconnects forming a metallization pattern of interdigitated fingers and busbars on the backside of the solar cell.
摘要翻译：提供了使用半导体晶片的背面接触式太阳能电池和制造方法。背面接合太阳能电池包括具有掺杂基极区域，光捕获前侧表面和掺杂背侧发射极区域的半导体晶片。前侧和后侧电介质层和钝化层提供增强的光捕获和内部反射。背面基极和发射极触点连接到在太阳能电池的背面上形成交叉指状物和母线的金属化图案的金属互连。

4. 发明申请

WO2014127067A1 MONOLITHICALLY ISLED BACK CONTACT BACK JUNCTION SOLAR CELLS USING BULK WAFERS 审中-公开
标题翻译：单独返回联系我们使用大容量波形连接太阳能电池
公开(公告)号：WO2014127067A1
公开(公告)日：2014-08-21
申请号：PCT/US2014/016140
申请日：2014-02-12
申请人： SOLEXEL, INC. , MOSLEHI, Mehrdad, M. , KAPUR, Pawan , KRAMER, Karl-Josef , WINGERT, Michael
发明人： MOSLEHI, Mehrdad, M. , KAPUR, Pawan , KRAMER, Karl-Josef , WINGERT, Michael
IPC分类号： H01L31/04 , H01L31/0224 , H01L31/18
CPC分类号： H01L31/0682 , H01L31/022441 , H01L31/022458 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： According to one aspect of the disclosed subject matter, a method for forming a monolithically isled back contact back junction solar cell using bulk wafers is provided. Emitter and base contact regions are formed on a backside of a semiconductor wafer having a light receiving frontside and a backside opposite said frontside. A first level contact metallization is formed on the wafer backside and an electrically insulating backplane is attached to the semiconductor wafer backside. Isolation trenches are formed in the semiconductor wafer patterning the semiconductor wafer into a plurality of electrically isolated isles and the semiconductor wafer is thinned. A metallization structure is formed on the electrically insulating backplane electrically connecting the plurality of isles.
摘要翻译：根据所公开的主题的一个方面，提供了一种使用块状晶片形成单片背面接触背面太阳能电池的方法。在具有光接收前侧和与前侧相对的背面的半导体晶片的背面上形成发射极和基极接触区域。第一层接触金属化形成在晶片背面，并且电绝缘底板附着到半导体晶片背面。在将半导体晶片图案化成多个电隔离岛的半导体晶片中形成隔离沟槽，并且半导体晶片变薄。在电绝缘背板上形成电连接多个岛的金属化结构。

5. 发明申请

WO2013022479A2 HIGH-EFFICIENCY SOLAR PHOTOVOLTAIC CELLS AND MODULES USING THIN CRYSTALLINE SEMICONDUCTOR ABSORBERS 审中-公开
标题翻译：高效太阳能光伏电池和使用薄晶体半导体吸收器的模块
公开(公告)号：WO2013022479A2
公开(公告)日：2013-02-14
申请号：PCT/US2012/000348
申请日：2012-08-09
申请人： SOLEXEL, INC. , MOSLEHI, Mehrdad, M. , KAPUR, Pawan , KRAMER, K.-Josef , RANA, Virendra, V. , SEUTTER, Sean , DESHPANDE, Anand , CALCATERRA, Anthony , OLSEN, Gerry , MANTEGHI, Kamran , STALCUP, Thom , KAMIAN, George, D. , WANG, David, Xuan-Qi , SU, Yen-Sheng , WINGERT, Michael
发明人： MOSLEHI, Mehrdad, M. , KAPUR, Pawan , KRAMER, K.-Josef , RANA, Virendra, V. , SEUTTER, Sean , DESHPANDE, Anand , CALCATERRA, Anthony , OLSEN, Gerry , MANTEGHI, Kamran , STALCUP, Thom , KAMIAN, George, D. , WANG, David, Xuan-Qi , SU, Yen-Sheng , WINGERT, Michael
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/022441 , H01L31/0201 , H01L31/02167 , H01L31/02327 , H01L31/03765 , H01L31/0392 , H01L31/049 , H01L31/0516 , H01L31/0682 , H01L31/075 , H01L31/1812 , H01L31/1896 , Y02E10/547
摘要： Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.
摘要翻译：描述了提供太阳能电池基板加强和电互连的背接触太阳能电池的背板的制造方法和结构以及用于形成薄膜背接触太阳能电池的制造方法和结构。

6. 发明申请

WO2013126033A2 APPARATUS AND METHODS FOR UNIFORMLY FORMING POROUS SEMICONDUCTOR ON A SUBSTRATE 审中-公开
标题翻译：在衬底上均匀形成多孔半导体的装置和方法
公开(公告)号：WO2013126033A2
公开(公告)日：2013-08-29
申请号：PCT/US2011/059177
申请日：2011-11-03
申请人： SOLEXEL, INC. , KRAMER, Karl-Josef , MOSLEHI, Mehrdad, M. , TAMILMANI, Subramanian , KAMIAN, George , ASHJAEE, Jay , YONEHARA, Takao
发明人： KRAMER, Karl-Josef , MOSLEHI, Mehrdad, M. , TAMILMANI, Subramanian , KAMIAN, George , ASHJAEE, Jay , YONEHARA, Takao
IPC分类号： H01L21/3063 , H01L21/306 , H01L21/02
CPC分类号： B81C99/0025 , B81C2201/0115 , C25D11/005 , C25D11/32 , C25D17/001 , C25D17/06 , C25F3/12 , C25F7/00 , H01L21/306 , H01L31/0284 , H01L31/18
摘要： This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
摘要翻译：本公开使得均匀多孔半导体层（由单层或多层多孔半导体，例如包含单孔或多孔层的多孔硅制成）的高生产率受控制造成为可能。一些应用包括用于管芯分离和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅（使用具有最佳孔隙率及其随后的氧化的多孔硅形成）的MEMS分离和牺牲层的制造。此外，本公开适用于光伏，MEMS的一般领域，包括传感器和致动器，独立或与集成半导体微电子学，半导体微电子芯片和光电子集成。

7. 发明申请

WO2012099701A1 METHOD FOR RECONSTRUCTING A SEMICONDUCTOR TEMPLATE 审中-公开
标题翻译：重构半导体模板的方法
公开(公告)号：WO2012099701A1
公开(公告)日：2012-07-26
申请号：PCT/US2011/068270
申请日：2011-12-31
申请人： SOLEXEL, INC. , KRAMER, Karl-Josef , MOSLEHI, Mehrdad, M. , WANG, David, Xuan-Qi , KAVARI, Rahim , RICOLCOL, Rafael , ASHJAEE, Jay
发明人： KRAMER, Karl-Josef , MOSLEHI, Mehrdad, M. , WANG, David, Xuan-Qi , KAVARI, Rahim , RICOLCOL, Rafael , ASHJAEE, Jay
IPC分类号： H01L31/042 , H01L31/0216 , H01L31/18
CPC分类号： H01L31/1892 , H01L21/02381 , H01L21/0243 , H01L21/02513 , Y02E10/50
摘要： The disclosed subject matter pertains to deposition of thin film or thin foil materials in general, but more specifically to deposition of epitaxial monocrystalline or quasi-monocrystalline silicon film (epi film) for use in manufacturing of high efficiency solar cells. In operation, methods are disclosed which extend the reusable life and to reduce the amortized cost of a substrate or template used in the manufacturing process of silicon solar cells. Further, methods are disclosed which provide for the conversion of a low quality starting surface into an improved quality starting surface of a silicon wafer.
摘要翻译：所公开的主题一般涉及薄膜或薄箔材料的沉积，更具体地涉及用于制造高效率太阳能电池的外延单晶或准单晶硅膜（epi膜）的沉积。在操作中，公开了延长可再利用寿命并降低在硅太阳能电池的制造过程中使用的基板或模板的摊销成本的方法。此外，公开了提供将低质量起始表面转化为硅晶片的改进质量起始表面的方法。

8. 发明申请

WO2011133965A2 PASSIVATION METHODS AND APPARATUS FOR ACHIEVING ULTRA-LOW SURFACE RECOMBINATION VELOCITIES FOR HIGH-EFFICIENCY SOLAR CELLS 审中-公开
标题翻译：用于实现高效率太阳能电池的超低表面重建速度的钝化方法和装置
公开(公告)号：WO2011133965A2
公开(公告)日：2011-10-27
申请号：PCT/US2011/033706
申请日：2011-04-23
申请人： SOLEXEL, INC. , DESHPANDE, Anand , RICOLCOL, Rafael , SEUTTER, Sean , KRAMER, Karl-josef , MOSLEHI, Mehrdad, M.
发明人： DESHPANDE, Anand , RICOLCOL, Rafael , SEUTTER, Sean , KRAMER, Karl-josef , MOSLEHI, Mehrdad, M.
IPC分类号： H01L31/18 , H01L31/0216 , H01L31/042
CPC分类号： H01L31/02167 , H01L31/1864 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： The disclosed subject matter provides a method and structure for obtaining ultra-low surface recombination velocities from highly efficient surface passivation in crystalline silicon substrate- based solar cells by utilizing a bi-layer passivation scheme which also works as an efficient ARC. The bi-layer passivation consists of a first thin layer of wet chemical oxide or a thin hydrogenated amorphous silicon layer. A second layer of amorphous hydrogenated silicon nitride film is deposited on top of the wet chemical oxide or amorphous silicon film. This deposition is then followed by annealing to further enhance the surface passivation.
摘要翻译：所公开的主题提供了一种用于通过利用也可用作有效ARC的双层钝化方案从基于晶体硅衬底的太阳能电池中的高效表面钝化获得超低表面复合速度的方法和结构。双层钝化由湿化学氧化物的第一薄层或薄氢化非晶硅层构成。第二层无定形氢化氮化硅膜沉积在湿化学氧化物或非晶硅膜的顶部。然后进行该沉积，然后进行退火以进一步增强表面钝化。

9. 发明申请

WO2011084531A3 MOBILE VACUUM CARRIERS FOR THIN WAFER PROCESSING 审中-公开
公开(公告)号：WO2011084531A3
公开(公告)日：2011-07-14
申请号：PCT/US2010/060591
申请日：2010-12-15
申请人： SOLEXEL, INC. , WANG, David, Xuan-qi , MOSLEHI, Mehrdad, M.
发明人： WANG, David, Xuan-qi , MOSLEHI, Mehrdad, M.
IPC分类号： H01L21/677
摘要： This disclosure presents mobile vacuum carriers that may be used to support thin substrates that would otherwise be too brittle to transport and process. This disclosure relates to the processing of thin semiconductor substrates and has particular applicability to the fields of photovoltaic solar cells, semiconductor microelectronic integrated circuits, micro-electro- mechanical systems (MEMS), optoelectronic devices (such as light-emitting diodes, lasers, photo detectors), data storage devices, etc.

10. 发明申请

WO2010111417A1 METHOD FOR FABRICATING A THREE-DIMENSIONAL THIN-FILM SEMICONDUCTOR SUBSTRATE FROM A TEMPLATE 审中-公开
标题翻译：从模板制造三维薄膜半导体基板的方法
公开(公告)号：WO2010111417A1
公开(公告)日：2010-09-30
申请号：PCT/US2010/028534
申请日：2010-03-24
申请人： SOLEXEL, INC. , WANG, David, Xuan-Qi , MOSLEHI, Mehrdad, M.
发明人： WANG, David, Xuan-Qi , MOSLEHI, Mehrdad, M.
IPC分类号： H01L31/00
CPC分类号： H01L31/035281 , C30B29/06 , C30B31/22 , H01L31/1892 , Y02E10/50
摘要： A method is presented for fabrication of a three-dimensional thin-film solar cell semiconductor substrate from a template. A semiconductor template having three-dimensional surface features comprising a top surfaces substantially aligned along a (100) crystallographic plane of semiconductor template and a plurality of inverted pyramidal cavities defined by sidewalls substantially aligned along a (111) crystallographic plane is formed according to an anisotropic etching process. A dose of relatively of high energy light-mass species is implanted in the template at a uniform depth and parallel to the top surfaces and said sidewalls defining the inverted pyramidal cavities of the template. The semiconductor template is annealed to convert the dose of relatively of high energy light-mass species to a mechanically-weak-thin layer. The semiconductor template is cleaved along the mechanically-weak-thin layer to release a three- dimensional thin-film semiconductor substrate from the semiconductor template.
摘要翻译：介绍了从模板制造三维薄膜太阳能电池半导体衬底的方法。具有三维表面特征的半导体模板包括沿着半导体模板的（100）结晶平面基本上对准的顶表面和由沿（111）晶面平行排列的侧壁限定的多个倒置金字塔形腔，根据各向异性蚀刻工艺。将相对高能量光质物质的剂量以均匀的深度注入模板中，并平行于顶表面和限定模板的倒锥形腔的所述侧壁。将半导体模板退火以将相对较高能量的光质物质的剂量转换成机械弱薄层。半导体模板沿着机械弱薄层切割，从半导体模板释放三维薄膜半导体衬底。

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