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    • 2. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • WO2006129741A1
    • 2006-12-07
    • PCT/JP2006/310945
    • 2006-05-25
    • SEMICONDUCTOR ENERGY LABORATORY CO., LTD.TSURUME, TakuyaHORIKOSHI, Nozomi
    • TSURUME, TakuyaHORIKOSHI, Nozomi
    • H01L29/786H01L21/336
    • H01L27/1266H01L27/1214H01L29/78603H01L29/78645
    • A semiconductor device is provided, which includes a first insulating layer over a first substrate, a transistor over the first insulating layer, a second insulating layer over the transistor, a first conductive layer connected to a source region or a drain region of the transistor through an opening provided in the second insulating layer, a third insulating layer over the first conductive layer, and a second substrate over the third insulating layer. The transistor comprises a semiconductor layer, a second conductive layer, and a fourth insulating layer provided between the semiconductor layer and the second conductive layer. One or plural layers selected from the first insulating layer, the second insulating layer, the third insulating layer, and the fourth insulating layer have a step portion which is provided so as not to overlap with the transistor.
    • 提供了一种半导体器件,其包括在第一衬底上的第一绝缘层,在第一绝缘层上的晶体管,晶体管上的第二绝缘层,与晶体管的源极区或漏极区连接的第一导电层, 设置在第二绝缘层中的开口,在第一导电层上方的第三绝缘层,以及位于第三绝缘层上的第二基板。 晶体管包括半导体层,第二导电层和设置在半导体层和第二导电层之间的第四绝缘层。 从第一绝缘层,第二绝缘层,第三绝缘层和第四绝缘层选择的一个或多个层具有设置成不与晶体管重叠的台阶部分。
    • 10. 发明申请
    • METHOD FOR MANUFACTURING THIN FILM INTEGRATED CIRCUIT
    • 制造薄膜集成电路的方法
    • WO2006001287A1
    • 2006-01-05
    • PCT/JP2005/011398
    • 2005-06-15
    • SEMICONDUCTOR ENERGY LABORATORY CO., LTD.TSURUME, TakuyaDAIRIKI, Koji
    • TSURUME, TakuyaDAIRIKI, Koji
    • H01L27/12
    • H01L27/1266H01L27/1214H01L2221/68363H01L2221/68368
    • An object of the present invention is to prevent a thin film integrate circuit from peeling off during the process of transferring to a base material. By a manufacturing method of the present invention, a separation layer is formed selectively on a surface of a substrate; thus, a first region where the separation layer is provided and a second region where the separation layer is not provided are formed. A thin film integrated circuit is formed over the separation layer. Then, an opening portion for exposing the separation layer is formed, en etching agent is introduced into the opening portion to remove the separation layer. Thus, a space is generated in the region provided with the separation layer, whereas a space is not generated in the region without the separation layer. Therefore, the thin film integrated circuit can be prevented from peeling off even after the separation layer is removed, by providing the region where the space is not generated after that.
    • 本发明的目的是在转印到基材的过程中防止薄膜集成电路剥离。 通过本发明的制造方法,在基板的表面上选择性地形成分离层, 因此,形成了设置分离层的第一区域和不设置分离层的第二区域。 在分离层上形成薄膜集成电路。 然后,形成用于暴露分离层的开口部分,将蚀刻剂引入开口部分以除去分离层。 因此,在设置有分离层的区域中产生空间,而在没有分离层的区域中不产生空间。 因此,即使在分离层被去除之后,也可以防止薄膜集成电路剥离,通过在其之后提供不产生空间的区域。