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1. 发明申请

WO2017052700A1 ADAPTIVE OPERATION FOR BAD BLOCKS OF 3D NAND MEMORY 审中-公开
标题翻译： 3D NAND存储器块的自适应操作
公开(公告)号：WO2017052700A1
公开(公告)日：2017-03-30
申请号：PCT/US2016/036613
申请日：2016-06-09
申请人： SANDISK TECHNOLOGIES LLC
发明人： YANG, Nian Niles , FITZPATRICK, James , YUAN, Jiahui
IPC分类号： G11C29/00 , G11C29/02 , G11C29/04 , G11C29/12 , G11C16/04
CPC分类号： G11C16/16 , G11C16/0483 , G11C16/26 , G11C29/025 , G11C29/028 , G11C29/70 , G11C29/88 , G11C2029/0411 , G11C2029/1202 , G11C2029/1204
摘要： In a nonvolatile memory block that contains separately-selectable sets of NAND strings, a bit line current sensing unit is configured to sense bit line current for a separately-selectable set of NAND strings of the block. A bit line voltage adjustment unit is configured to apply a first and second bit line voltages to separately-selectable sets of NAND strings that have bit line currents greater and less than the minimum current respectively, the second bit line voltage being greater than the first bit line voltage.
摘要翻译：在包含可单独选择的NAND串集合的非易失性存储器块中，位线电流感测单元被配置为感测用于该块的可单独选择的一组NAND串的位线电流。位线电压调整单元被配置为将第一和第二位线电压施加到分别可选择的NAND串组，其具有大于和小于最小电流的位线电流，第二位线电压大于第一位线电压。

2. 发明申请

WO2018048490A1 BLOCK HEALTH MONITORING USING THRESHOLD VOLTAGE OF DUMMY MEMORY CELLS 审中-公开
标题翻译：基于虚电内存阈值电压的健康监测
公开(公告)号：WO2018048490A1
公开(公告)日：2018-03-15
申请号：PCT/US2017/034891
申请日：2017-05-28
申请人： SANDISK TECHNOLOGIES LLC
发明人： PANG, Liang , YU, Xuehong , DONG, Yingda , YANG, Nian Niles
IPC分类号： G11C16/34 , G11C7/14 , G11C16/04 , G11C11/56
摘要： Techniques are provided for measuring the endurance of a set of data memory cells by evaluating the threshold voltage (Vth) of associated dummy memory cells. A cell has a high endurance or good data retention if it is able to maintain the charges. However, there can be a variation in the endurance of cells even within a single die. By evaluating the dummy memory cells, an early warning can be obtained of a degradation of the data memory cells. Moreover, there is no interference with the operation of the data memory cells. Based on a number of dummy memory cells which have a Vth below a demarcation voltage, a corrective action is taken such as adjusting read voltages, an initial program voltage and/or an initial erase voltage, or marking the block as being bad and recovering the data.
摘要翻译：通过评估关联的虚存储单元的阈值电压（Vth）来提供用于测量一组数据存储单元的耐久性的技术。如果电池能够维持充电，则电池具有高耐久性或良好的数据保留。但是，即使在一个模具内，电池的耐久性也可能有所不同。通过评估伪存储单元，可以获得数据存储单元退化的预警。而且，不会干扰数据存储单元的操作。基于具有低于分界电压Vth的虚拟存储器单元的数量，采取诸如调整读取电压，初始编程电压和/或初始擦除电压的校正动作，或者将块标记为坏并且恢复数据

3. 发明申请

WO2017189074A1 INDEPENDENT MULTI-PLANE READ AND LOW LATENCY HYBRID READ 审中-公开
标题翻译：独立的多平面读取和低延时混合读取
公开(公告)号：WO2017189074A1
公开(公告)日：2017-11-02
申请号：PCT/US2017/018547
申请日：2017-02-19
申请人： SANDISK TECHNOLOGIES LLC
发明人： SHAH, Grishma , LI, Yan , CHEN, Jian , LOUIE, Kenneth , YANG, Nian Niles
IPC分类号： G11C16/26 , G11C11/56 , G11C16/04 , G11C7/10
CPC分类号： G11C7/1009 , G11C7/1015 , G11C7/1039 , G11C7/1063 , G11C11/56 , G11C11/5642 , G11C16/0483 , G11C16/26 , G11C2211/563 , G11C2216/20
摘要： Read operations are performed in a multi-plane memory device. A state machine interfaces an external controller to each plane of memory cells to allow reading from selected word lines in the planes. In one approach, different types of read operations are performed in different planes, such as a multi-level cell read, e.g., a lower, middle or upper page read and a single-level cell (SLC) read. When the read operation in one plane uses fewer read voltages than another plane, the read data can be output early from the one plane while read operations continue on the other plane. The external controller can also command a cache release for one plane after outputting data from the caches of another plane. Read voltages can be set for each plane in a respective set of registers.
摘要翻译：
读取操作在多平面存储设备中执行。状态机将外部控制器连接到每个存储单元平面以允许从平面中的选定字线进行读取。在一种方法中，在不同平面中执行不同类型的读取操作，诸如多级单元读取，例如，较低，中间或较高页面读取和单级单元（SLC）读取。当一个平面中的读取操作使用比另一个平面更少的读取电压时，读取数据可以从一个平面提前输出，而读取操作在另一个平面上继续。在从另一个平面的高速缓存输出数据后，外部控制器也可以为一个平面命令缓存释放。读取电压可以为相应寄存器组中的每个平面设置。

4. 发明申请

WO2016209639A1 MEMORY HEALTH MONITORING 审中-公开
标题翻译：记忆健康监测
公开(公告)号：WO2016209639A1
公开(公告)日：2016-12-29
申请号：PCT/US2016/036847
申请日：2016-06-10
申请人： SANDISK TECHNOLOGIES LLC
发明人： YANG, Nian Niles , ALROD, Idan
IPC分类号： G11C7/10 , G11C16/34
CPC分类号： G06F3/0653 , G06F3/0616 , G06F3/0679 , G11C7/1006 , G11C16/3495 , G11C2211/5647
摘要： A data storage device may be configured to write first data to a first set of storage elements of a non-volatile memory and to write second data to a second set of storage elements of the non-volatile memory. The first data may be processed by a data shaping operation, and the second data may not be processed by the data shaping operation. The data storage device may be further configured to read a representation of the second data from the second set of storage cells and to determine a block health metric of a portion of the non-volatile memory based on the representation of the second data. The portion may include the first set of storage elements and the second set of storage elements. As an illustrative, non-limiting example, the first portion may be a first block of the non-volatile memory.
摘要翻译：数据存储设备可以被配置为将第一数据写入非易失性存储器的第一组存储元件，并将第二数据写入非易失性存储器的第二组存储元件。可以通过数据整形操作来处理第一数据，并且可以不通过数据整形操作来处理第二数据。数据存储设备还可以被配置为从第二组存储单元读取第二数据的表示，并且基于第二数据的表示来确定非易失性存储器的一部分的块健康度量。该部分可以包括第一组存储元件和第二组存储元件。作为说明性的非限制性示例，第一部分可以是非易失性存储器的第一块。

5. 发明申请

WO2017151474A1 TEMPERATURE VARIATION COMPENSATION OF A MEMORY 审中-公开
标题翻译：记忆的温度变化补偿
公开(公告)号：WO2017151474A1
公开(公告)日：2017-09-08
申请号：PCT/US2017/019612
申请日：2017-02-27
申请人： SANDISK TECHNOLOGIES LLC
发明人： SHARON, Eran , YANG, Nian Niles , ALROD, Idan , MEKHANIK, Evgeny , SHLICK, Mark , LAI, Joanna
IPC分类号： G11C7/04 , G11C11/56 , G11C16/10 , G11C16/26 , G11C16/34
摘要： A data storage device is configured to mark data for refresh in response to determining that a first measured temperature associated with writing the data to the memory exceeds a first threshold. The data storage device is further configured to refresh the marked data in response to determining that a second measured temperature associated with the memory is below a second threshold.
摘要翻译：数据存储设备被配置为响应于确定与向存储器写入数据相关联的第一测量温度超过第一阈值而标记用于刷新的数据。数据存储设备进一步被配置为响应于确定与存储器相关联的第二测量温度低于第二阈值而刷新标记数据。

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