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1. 发明申请

WO2010036616A1 MIIM DIODES HAVING STACKED STRUCTURE 审中-公开
标题翻译：具有堆叠结构的MIIM二极管
公开(公告)号：WO2010036616A1
公开(公告)日：2010-04-01
申请号：PCT/US2009/057696
申请日：2009-09-21
申请人： SANDISK 3D LLC , SEKAR, Deepak, C. , KUMAR, Tanmay , RABKIN, Peter , PING, Er-xuan , CHEN, Xiying
发明人： SEKAR, Deepak, C. , KUMAR, Tanmay , RABKIN, Peter , PING, Er-xuan , CHEN, Xiying
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/00 , H01L27/2418 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/144 , H01L45/149
摘要： A metal-insulator diode is disclosed. In one aspect, the metal-insulator diode comprises first and second electrode and first and second insulators arranged as follows. An insulating region has a trench formed therein. The trench has a bottom and side walls. The first electrode, which comprises a first metal, is on the side walls and over the bottom of the trench. A first insulator has a first interface with the first electrode. At least a portion of the first insulator is within the trench. A second insulator has a second interface with the first insulator. At least a portion of the second insulator is within the trench. The second electrode, which comprises a second metal, is in contact with the second insulator. The second electrode at least partially fills the trench. A memory element can further be in contact with one of the electrodes, preferably also within the trench.
摘要翻译：公开了一种金属绝缘体二极管。在一个方面，金属绝缘体二极管包括第一和第二电极以及如下布置的第一和第二绝缘体。绝缘区域中形成有沟槽。沟槽有一个底部和侧壁。第一电极包括第一金属，位于沟槽的侧壁和底部的上方。第一绝缘体具有与第一电极的第一界面。第一绝缘体的至少一部分在沟槽内。第二绝缘体具有与第一绝缘体的第二接口。第二绝缘体的至少一部分在沟槽内。包括第二金属的第二电极与第二绝缘体接触。第二电极至少部分地填充沟槽。存储元件还可以与电极之一进一步接触，优选也在沟槽内。

2. 发明申请

WO2010083067A1 NONVOLATILE MEMORY CELL INCLUDING CARBON STORAGE ELEMENT FORMED ON A SILICIDE LAYER 审中-公开
标题翻译：非易失性存储单元，包括在硅化物层上形成的碳储存元件
公开(公告)号：WO2010083067A1
公开(公告)日：2010-07-22
申请号：PCT/US2010/020084
申请日：2010-01-05
申请人： SANDISK 3D LLC , FU, Chu-chen , KUMAR, Tanmay , PING, Er-xuan , XU, Huiwan
发明人： FU, Chu-chen , KUMAR, Tanmay , PING, Er-xuan , XU, Huiwan
IPC分类号： H01L27/10 , H01L27/102
CPC分类号： H01L27/101 , H01L27/1021 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/149 , H01L45/1616 , H01L45/1675
摘要： A nonvolatile memory cell includes a storage element, the storage element comprising a carbon material, a steering element located in series with the storage element, and a metal suicide layer located adjacent to the carbon material. A method of making a device includes forming a metal suicide over a silicon layer, forming a carbon layer over the metal suicide layer, forming a barrier layer over the carbon layer, and patterning the carbon layer, the metal suicide layer, and the silicon layer to form an array of pillars.
摘要翻译：非易失性存储单元包括存储元件，所述存储元件包括碳材料，与所述存储元件串联定位的操舵元件和位于所述碳材料附近的金属硅化物层。一种制造器件的方法包括在硅层上形成金属硅化物，在金属硅化物层上形成碳层，在碳层上形成阻挡层，并对碳层，金属硅化物层和硅层进行构图形成一系列的柱子。

3. 发明申请

WO2010005866A1 METHOD OF MAKING A NONVOLATILE MEMORY DEVICE 审中-公开
标题翻译：制造非易失性存储器件的方法
公开(公告)号：WO2010005866A1
公开(公告)日：2010-01-14
申请号：PCT/US2009/049518
申请日：2009-07-02
申请人： SANDISK 3D LLC , PING, Er-xuan , THAKUR, Randhir , SCHEUGRAF, Klaus
发明人： PING, Er-xuan , THAKUR, Randhir , SCHEUGRAF, Klaus
IPC分类号： H01L27/10 , H01L27/102 , H01L21/768
CPC分类号： H01L27/1021 , H01L21/7688 , H01L27/101
摘要： A method of making a semiconductor device includes forming a pillar shaped semiconductor device surrounded by an insulating layer (108) such that a contact hole (111) in the insulating layer exposes an upper surface of the semiconductor device. The method also includes forming a shadow mask layer (302) over the insulating layer (108) such that a portion of the shadow mask layer (302) overhangs a portion of the contact hole (111), forming a conductive layer such that a first portion (304) of the conductive layer is located on the upper surface of the semiconductor device exposed in the contact hole and a second portion (306) of the conductive layer is located over the shadow mask layer (302), and removing the shadow mask layer (302) and the second portion (306) of the conductive layer.
摘要翻译：制造半导体器件的方法包括形成由绝缘层（108）围绕的柱状半导体器件，使得绝缘层中的接触孔（111）露出半导体器件的上表面。该方法还包括在绝缘层（108）上形成阴影掩模层（302），使得阴影掩模层（302）的一部分突出在接触孔（111）的一部分上，形成导电层，使得第一导电层的部分（304）位于暴露在接触孔中的半导体器件的上表面上，导电层的第二部分（306）位于荫罩层（302）的上方，并且去除荫罩层（302）和导电层的第二部分（306）。

4. 发明申请

WO2009126493A1 METHOD OF MAKING NONVOLATILE MEMORY CELL CONTAINING CARBON RESISTIVITY SWITCHING AS A STORAGE ELEMENT BY LOW TEMPERATURE PROCESSING 审中-公开
标题翻译：通过低温处理制造含有碳电阻开关作为存储元件的非易失性存储单元的方法
公开(公告)号：WO2009126493A1
公开(公告)日：2009-10-15
申请号：PCT/US2009/039127
申请日：2009-04-01
申请人： SANDISK 3D LLC , KUMAR, Tammy , PING, Er-xuan , ILKBAHAR, Alper
发明人： KUMAR, Tammy , PING, Er-xuan , ILKBAHAR, Alper
IPC分类号： H01L45/00 , H01L51/00
CPC分类号： H01L45/04 , G11C13/00 , H01L27/2409 , H01L45/1233 , H01L45/149 , H01L45/1608
摘要： A method of making a nonvolatile memory cell includes forming a steering element and forming a graphene storage element by coating a graphene containing colloid.
摘要翻译：制造非易失性存储单元的方法包括：通过涂覆含石墨烯的胶体形成转向元件并形成石墨烯存储元件。

5. 发明申请

WO2010009364A1 CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING THE SAME 审中-公开
标题翻译：基于碳的电阻率切换材料及其形成方法
公开(公告)号：WO2010009364A1
公开(公告)日：2010-01-21
申请号：PCT/US2009/050930
申请日：2009-07-17
申请人： SANDISK 3D, LLC , XU, Huiwen , PING, Er-xuan , FU, Andy
发明人： XU, Huiwen , PING, Er-xuan , FU, Andy
IPC分类号： H01L27/10
CPC分类号： H01L27/101 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/149 , H01L45/1616
摘要： Methods of forming memory devices, and memory devices formed in accordance with such methods, are provided, the methods including forming a via above a first conductive layer, forming a nonconformal carbon-based resistivity-switchable material layer in the via and coupled to the first conductive layer; and forming a second conductive layer in the via, above and coupled to the nonconformal carbon-based resistivity-switchable material layer. Numerous other aspects are provided.
摘要翻译：提供了形成存储器件的方法和根据这些方法形成的存储器件，所述方法包括在第一导电层上方形成通孔，在通孔中形成非共形的基于碳的电阻率可切换材料层并耦合到第一导电层导电层; 并在上述通孔中形成第二导电层，并且连接到非共形的基于碳的电阻率可切换材料层。提供了许多其他方面。

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