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1. 发明申请

WO2013106145A2 ELECTROMECHANICAL SYSTEMS VARIABLE CAPACITANCE ASSEMBLY 审中-公开
标题翻译：电力系统可变电容组件
公开(公告)号：WO2013106145A2
公开(公告)日：2013-07-18
申请号：PCT/US2012/068401
申请日：2012-12-07
申请人： QUALCOMM MEMS TECHNOLOGIES, INC.
发明人： LAN, Je-Hsiung , GOUSEV, Evgeni Petrovich , PARK, Sang-June , ZHANG, Wenyue
IPC分类号： H01G5/38 , B05D5/12
CPC分类号： G02B26/0841 , G09G3/3466 , H01G5/38
摘要： This disclosure provides systems, methods and apparatus for a variable capacitance apparatus. In one aspect, an apparatus includes a plurality of electromechanical systems varactors connected in parallel. Each of the plurality of electromechanical systems varactors includes a first, a second, and a third metal layer. The first metal layer includes a first bias electrode. The second metal layer is spaced apart from the first metal layer to define a first air gap, and includes a first radio frequency electrode. A third metal layer is spaced apart from the second metal layer to define a second air gap, and includes a second radio frequency electrode and a second bias electrode. The second bias electrode of each of the plurality of electromechanical systems varactors has a different projected area perpendicular to a surface of the second metal layer and onto the surface of the second metal layer.
摘要翻译：本公开提供了用于可变电容装置的系统，方法和装置。一方面，一种装置包括并联连接的多个机电系统变容二极管。多个机电系统中的每一个可变电抗器包括第一，第二和第三金属层。第一金属层包括第一偏置电极。第二金属层与第一金属层间隔开以限定第一气隙，并且包括第一射频电极。第三金属层与第二金属层间隔开以限定第二气隙，并且包括第二射频电极和第二偏置电极。多个机电系统中的每一个可变电抗器的第二偏置电极具有垂直于第二金属层的表面和第二金属层的表面的不同的投影面积。

2. 发明申请

WO2012158889A1 PIEZOELECTRIC RESONATORS WITH CONFIGURATIONS HAVING NO GROUND CONNECTIONS TO ENHANCE ELECTROMECHANICAL COUPLING 审中-公开
标题翻译：具有无接地连接的配置的压电谐振器，以增强机电耦合
公开(公告)号：WO2012158889A1
公开(公告)日：2012-11-22
申请号：PCT/US2012/038308
申请日：2012-05-17
申请人： QUALCOMM MEMS TECHNOLOGIES, INC. , YUN, Changhan , PARK, Sang-June , LO, Chi Shun , KIM, Jonghae , LAN, Je-Hsiung , JOO, Sanghoon
发明人： YUN, Changhan , PARK, Sang-June , LO, Chi Shun , KIM, Jonghae , LAN, Je-Hsiung , JOO, Sanghoon
IPC分类号： H03H9/17 , H03H9/02
CPC分类号： H03H9/173 , H03H9/02228
摘要： This disclosure provides implementations of electromechanical systems resonator structures, devices, apparatus, systems, and related processes. In one aspect, resonator apparatus includes a first conductive layer including a first electrode and a second electrode. The first electrode is coupled to receive a first input signal, and the second electrode is coupled to provide a first output signal. A piezoelectric layer includes a piezoelectric material. The piezoelectric layer has a first side and a second side opposite the first side. The first side is proximate the first conductive layer, and the second side is electrically isolated from ground. In some examples, the second side of the piezoelectric layer can be exposed and/or electrically de-coupled from one or more components.
摘要翻译：本公开提供了机电系统谐振器结构，设备，装置，系统和相关过程的实现。在一个方面，谐振器装置包括包括第一电极和第二电极的第一导电层。第一电极被耦合以接收第一输入信号，并且第二电极被耦合以提供第一输出信号。压电层包括压电材料。压电层具有与第一侧相对的第一侧和第二侧。第一侧靠近第一导电层，第二侧与地电隔离。在一些示例中，压电层的第二面可以暴露和/或从一个或多个部件电脱耦合。

3. 发明申请

WO2012087942A2 METHOD OF FABRICATION AND RESULTANT ENCAPSULATED ELECTROMECHANICAL DEVICE 审中-公开
标题翻译：制造方法和结果封装的电化学装置
公开(公告)号：WO2012087942A2
公开(公告)日：2012-06-28
申请号：PCT/US2011/065864
申请日：2011-12-19
申请人： QUALCOMM MEMS TECHNOLOGIES, INC. , HE, Rihui , YAN, Xiaoming , LAN, Je-Hsiung
发明人： HE, Rihui , YAN, Xiaoming , LAN, Je-Hsiung
IPC分类号： B81C1/00
CPC分类号： B81C1/00333 , B81C2203/0136 , B81C2203/0145
摘要： This disclosure provides systems, methods, and apparatus for encapsulated electromechanical systems. In one aspect, a release path includes a release hole through an encapsulation layer. The release path exposes a portion of a first sacrificial layer that extends beyond a second sacrificial layer in a horizontal direction. This allows the first sacrificial layer and the second sacrificial layer to later be etched through the release path. The corresponding electromechanical system device includes a shell layer encapsulating a mechanical layer. A conformal layer seals a release hole that extends through a shell layer. A portion of the conformal layer blocks the opening of the release passage within the release hole. The release passage has substantially the same vertical height as a gap that defines the spacing between the mechanical layer and a substrate.
摘要翻译：本公开提供了用于封装的机电系统的系统，方法和装置。一方面，释放路径包括通过封装层的释放孔。释放路径暴露在水平方向上延伸超过第二牺牲层的第一牺牲层的一部分。这允许第一牺牲层和第二牺牲层随后通过释放路径被蚀刻。相应的机电系统装置包括封装机械层的外壳层。保形层密封延伸穿过壳层的释放孔。共形层的一部分阻挡释放孔内的释放通道的开口。释放通道具有与限定机械层和基底之间的间隔的间隙大致相同的垂直高度。

4. 发明申请

WO2012158544A1 ELECTROMECHANICAL SYSTEMS OSCILLATOR WITH PIEZOELECTRIC CONTOUR MODE RESONATOR FOR MULTIPLE FREQUENCY GENERATION 审中-公开
标题翻译：电磁系统振荡器，具有用于多个频率发生的压电轮廓模式谐振器
公开(公告)号：WO2012158544A1
公开(公告)日：2012-11-22
申请号：PCT/US2012/037599
申请日：2012-05-11
申请人： QUALCOMM MEMS TECHNOLOGIES, INC. , KIM, Jonghae , LAN, Je-Hsiung , YUN, Changhan , LO, Chi Shun , NOWAK, Matthew
发明人： KIM, Jonghae , LAN, Je-Hsiung , YUN, Changhan , LO, Chi Shun , NOWAK, Matthew
IPC分类号： H03H9/24
CPC分类号： H03H9/2426 , H03H9/02228 , H03H9/2405 , H03H9/462 , H03H2009/241
摘要： Electromechanical systems resonator structures, devices, circuits, and systems are disclosed. In one aspect, an oscillator (1200) includes an active component (1204) and a passive component (1212) connected in a feedback configuration. The passive component (1212) includes one or more contour mode resonators (CMR). A CMR includes a piezoelectric layer (208) disposed between a first conductive layer (104a, 104b) and a second conductive layer (204a, 204b). The conductive layers include an input electrode and an output electrode. The passive component (1212) is configured to output a first resonant frequency and a second resonant frequency, which is an odd integer harmonic of the first resonant frequency. The active component (1204) is configured to output a signal including the first resonant frequency and the second resonant frequency. This output signal can be a substantially square wave signal, which can serve as a clock in various applications.
摘要翻译：公开了机电系统谐振器结构，器件，电路和系统。在一个方面，振荡器（1200）包括以反馈配置连接的有源部件（1204）和无源部件（1212）。无源部件（1212）包括一个或多个轮廓模式谐振器（CMR）。 CMR包括设置在第一导电层（104a，104b）和第二导电层（204a，204b）之间的压电层（208）。导电层包括输入电极和输出电极。无源部件（1212）被配置为输出第一谐振频率和第二谐振频率，其是第一谐振频率的奇整数谐波。有源部件（1204）被配置为输出包括第一谐振频率和第二谐振频率的信号。该输出信号可以是基本上为方波信号，其可以用作各种应用中的时钟。

5. 发明申请

WO2009120558A1 APPARATUS AND METHOD OF DUAL-MODE DISPLAY 审中-公开
标题翻译：双模显示装置及方法
公开(公告)号：WO2009120558A1
公开(公告)日：2009-10-01
申请号：PCT/US2009/037583
申请日：2009-03-18
申请人： QUALCOMM MEMS TECHNOLOGIES, INC. , LAN, Je-Hsiung
发明人： LAN, Je-Hsiung
IPC分类号： G02B26/00 , G09G3/34
CPC分类号： G02B26/001 , G09G3/3233 , G09G3/3466 , G09G2300/046 , G09G2300/0842 , G09G2300/0866 , G09G2360/144
摘要： One embodiment includes display comprising a light modulator configured to display a portion of an image such as a reflective light modulator, a light emitter configured to display the portion of the image and a circuit configured to selectively provide signals to at least one of the light modulator and the light emitter indicative of the portion of the image. In one such embodiment, an active matrix provides a simple, efficient drive for such devices. Other embodiments methods of making and driving such devices.
摘要翻译：一个实施例包括显示器，其包括被配置为显示诸如反射光调制器的图像的一部分的光调制器，被配置为显示图像的该部分的光发射器和被配置为选择性地向至少一个光调制器和指示图像部分的光发射器。在一个这样的实施例中，有源矩阵为这种设备提供简单，有效的驱动。其他实施例制造和驱动这些装置的方法。

6. 发明申请

WO2009020882A1 ESD PROTECTION FOR MEMS DISPLAY PANELS 审中-公开
标题翻译： MEMS显示面板的ESD保护
公开(公告)号：WO2009020882A1
公开(公告)日：2009-02-12
申请号：PCT/US2008/072011
申请日：2008-08-01
申请人： QUALCOMM MEMS TECHNOLOGIES, INC. , LAN, Je-Hsiung , ZHOU, Lixia
发明人： LAN, Je-Hsiung , ZHOU, Lixia
IPC分类号： G02B26/00 , H01L27/02 , H02H9/04 , G09G3/34
CPC分类号： G09G3/3466 , G02B26/001 , G09G2330/04 , H01L27/0248
摘要： A MEMS (Microelectromechanical system) device is described. The device includes an array of MEMS elements with addressing lines and MEMS switches configured to selectively connect the addressing lines to a ground or other potential in the event of an over- voltage, such as during an ESD event. The arrangement is particularly advantageous for protecting the array, because the MEMS switches can be formed using substantially the same processing steps which are used to form the array.
摘要翻译：描述了MEMS（微机电系统）装置。该器件包括具有寻址线和MEMS开关的MEMS元件的阵列，其被配置为在诸如ESD事件期间在过电压的情况下选择性地将寻址线连接到地或其它电位。该装置对于保护阵列特别有利，因为可以使用用于形成阵列的基本上相同的处理步骤来形成MEMS开关。

7. 发明申请

WO2013059580A1 ELECTROMECHANICAL SYSTEMS VARIABLE CAPACITANCE DEVICE 审中-公开
标题翻译：电动系统可变电容装置
公开(公告)号：WO2013059580A1
公开(公告)日：2013-04-25
申请号：PCT/US2012/061005
申请日：2012-10-19
申请人： QUALCOMM MEMS TECHNOLOGIES, INC.
发明人： FELNHOFER, Daniel , ZHANG, Wenyue , LAN, Je-Hsiung
IPC分类号： G02B26/08 , H01G5/16
CPC分类号： H01G5/16 , G02B26/001
摘要： This disclosure provides systems, methods and apparatus for electromechanical systems variable capacitance devices. In one aspect, an electromechanical systems variable capacitance device includes a substrate with a first metal layer including a first bias electrode overlying the substrate. A member suspended above the first metal layer includes a dielectric beam and a second metal layer including a first radio frequency electrode and a ground electrode. The member and the first metal layer define a first air gap. A third metal layer over the member includes a second bias electrode, and the third metal layer and the member define a second air gap. The member includes a plane of symmetry substantially parallel a plane containing the first bias electrode.
摘要翻译：本公开提供了用于机电系统可变电容器件的系统，方法和装置。一方面，机电系统可变静电电容器件包括具有第一金属层的衬底，第一金属层包括覆盖衬底的第一偏置电极。悬挂在第一金属层上方的构件包括电介质束和包括第一射频电极和接地电极的第二金属层。构件和第一金属层限定第一气隙。该构件上的第三金属层包括第二偏置电极，并且第三金属层和构件限定第二气隙。该构件包括基本平行于包含第一偏置电极的平面的对称平面。

8. 发明申请

WO2011075366A1 TWO-TERMINAL VARIABLE CAPACITANCE MEMS DEVICE 审中-公开
标题翻译：双端可变电容MEMS器件
公开(公告)号：WO2011075366A1
公开(公告)日：2011-06-23
申请号：PCT/US2010/059512
申请日：2010-12-08
申请人： QUALCOMM MEMS TECHNOLOGIES, INC. , LAN, Je-Hsiung , GOUSEV, Evgeni , OZAKI, Ernest, Tadashi
发明人： LAN, Je-Hsiung , GOUSEV, Evgeni , OZAKI, Ernest, Tadashi
IPC分类号： H01G5/16 , G02B26/00 , G09G3/34
CPC分类号： H01G5/16 , G02B26/001
摘要： A two-terminal, variable capacitance device is described that is constructed by connecting multiple MEMS devices having different actuation or "pull in" voltages in parallel.
摘要翻译：描述了通过并联具有不同驱动或“拉入”电压的多个MEMS器件构成的两端可变电容器件。

9. 发明申请

WO2012148712A1 PIEZOELECTRIC RESONATORS AND FABRICATION PROCESSES 审中-公开
标题翻译：压电谐振器和制造工艺
公开(公告)号：WO2012148712A1
公开(公告)日：2012-11-01
申请号：PCT/US2012/033609
申请日：2012-04-13
申请人： QUALCOMM MEMS TECHNOLOGIES, INC. , LAN, Je-Hsiung , PARK, Sang-June , KIM, Jonghae , GOUSEV, Evgeni , NOWAK, Matthew , STEPHANOU, Philip J. , BLACK, Justin , PETERSEN, Kurt , GANAPATHI, Srinivasan
发明人： LAN, Je-Hsiung , PARK, Sang-June , KIM, Jonghae , GOUSEV, Evgeni , NOWAK, Matthew , STEPHANOU, Philip J. , BLACK, Justin , PETERSEN, Kurt , GANAPATHI, Srinivasan
IPC分类号： H03H3/007 , H03H9/24
CPC分类号： H03H3/0072 , H03H9/2447 , Y10T29/42
摘要： This disclosure provides implementations of electromechanical systems resonator structures, devices, apparatus, systems, and related processes. In one aspect, a sacrificial layer is deposited on an insulating substrate. A lower electrode layer is formed proximate the sacrificial layer. A piezoelectric layer is deposited on the lower electrode layer. An upper electrode layer is formed on the piezoelectric layer. At least a portion of the sacrificial layer is removed to define a cavity such that at least a portion of the lower electrode layer is spaced apart from the insulating substrate.
摘要翻译：本公开提供了机电系统谐振器结构，设备，装置，系统和相关过程的实现。在一个方面，牺牲层沉积在绝缘衬底上。在牺牲层附近形成下电极层。压电层沉积在下电极层上。在压电层上形成上电极层。去除牺牲层的至少一部分以限定空腔，使得下电极层的至少一部分与绝缘基板间隔开。

10. 发明申请

WO2010008985A3 ENCAPSULATION METHODS FOR INTERFERO-METRIC MODULATOR AND MEMS DEVICES 审中-公开
公开(公告)号：WO2010008985A3
公开(公告)日：2010-01-21
申请号：PCT/US2009/049964
申请日：2009-07-08
申请人： QUALCOMM MEMS TECHNOLOGIES, INC. , LAN, Je-Hsiung
发明人： LAN, Je-Hsiung
IPC分类号： B81C1/00
摘要： Methods and devices used for the encapsulation of MEMS devices, such as an interferometric modulator, are disclosed. Encapsulation is provided to MEMS devices to protect the devices from such environmental hazards as moisture and mechanical shock. In addition to the encapsulation layer (300) providing protection from environmental hazards, the encapsulation layer (300) is additionally planarized so as to function as a substrate for additional circuit elements formed above the encapsulation layer (300).

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