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1. 发明申请

WO2010012674A3 METHOD FOR MANUFACTURING A PHOTOVOLTAIC CELL STRUCTURE 审中-公开
公开(公告)号：WO2010012674A3
公开(公告)日：2010-02-04
申请号：PCT/EP2009/059637
申请日：2009-07-27
申请人： OERLIKON SOLAR IP AG, TRUEBBACH , KUPICH, Markus , MEIER, Johannes , BENAGLI, Stefano , ROSCHEK, Tobias
发明人： KUPICH, Markus , MEIER, Johannes , BENAGLI, Stefano , ROSCHEK, Tobias
IPC分类号： H01L31/18
摘要： In the frame of photovoltaic cell manufacturing a silicon compound layer is deposited upon a carrier structure. Manufacturing flexibility is increased on one hand by incorporating ambient air exposure of such silicon compound layer and on the other preventing deterioration of reproducibility by such ambient air exposure by enriching the surface of the addressed silicon compound layer which is to be exposed to ambient air to an oxygen enrichment.

2. 发明申请

WO2010020544A1 IMPROVEMENT OF ELECTRICAL AND OPTICAL PROPERTIES OF SILICON SOLAR CELLS 审中-公开
标题翻译：硅太阳能电池的电气和光学性能的改进
公开(公告)号：WO2010020544A1
公开(公告)日：2010-02-25
申请号：PCT/EP2009/060200
申请日：2009-08-06
申请人： OERLIKON SOLAR IP AG, TRUEBBACH , BENAGLI, Stefano , MEIER, Johannes , KROLL, Ulrich
发明人： BENAGLI, Stefano , MEIER, Johannes
IPC分类号： C23C16/22 , C23C16/455 , C23C16/513 , H01G9/20 , H01L31/0368 , H01L31/042
CPC分类号： C23C16/22 , C23C16/28 , C23C16/455 , C23C16/513 , H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： The method for manufacturing a photovoltaic cell or a photovoltaic converter panel comprises depositing a layer of p-doped amorphous silicon using a gas mixture comprising silane, methane, hydrogen and trimethylboron in a ratio of 1 : 2 : 2 : 1.25. In particular, plasma-enhanced chemical vapor deposition is used for the deposition. The corresponding photovoltaic cells and photovoltaic converter panels are also described.
摘要翻译：制造光伏电池或光伏转换器面板的方法包括使用包含硅烷，甲烷，氢气和三甲基硼的比例为1:2:2:2.25的气体混合物沉积p掺杂的非晶硅层。特别地，等离子体增强化学气相沉积用于沉积。还描述了相应的光伏电池和光伏转换器面板。

3. 发明申请

WO2009141459A2 METHOD FOR MANUFACTURING A PHOTOVOLTAIC CELL STRUCTURE 审中-公开
标题翻译：制造光伏电池结构的方法
公开(公告)号：WO2009141459A2
公开(公告)日：2009-11-26
申请号：PCT/EP2009/061576
申请日：2009-09-07
申请人： OERLIKON SOLAR AG, TRUEBBACH , MEIER, Johannes , BRONNER, Markus , KUPICH, Markus , ROSCHEK, Tobias , GOLDBACH, Hanno
发明人： MEIER, Johannes , BRONNER, Markus , KUPICH, Markus , ROSCHEK, Tobias , GOLDBACH, Hanno
IPC分类号： H01L31/076 , H01L31/077
CPC分类号： H01L31/1824 , H01L31/076 , H01L31/077 , H01L31/202 , H01L31/208 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： In the frame of manufacturing a photovoltaic cell a layer (3) of silicon compound is deposited on a structure (1). The yet uncovered surface (3a) is treated in a predetermined oxygen (O2) containing atmosphere which additionally contains a dopant (D). Thereby, the silicon compound layer is oxidized and doped in a thin surface area (5).
摘要翻译：在制造光伏电池的框架中，硅化合物层（3）沉积在结构（1）上。尚未覆盖的表面（3a）在另外含有掺杂剂（D）的预定含氧（O 2）气氛中处理。由此，硅化合物层被氧化并掺杂在薄表面区域（5）中。

4. 发明申请

WO2010022530A1 METHOD FOR MANUFACTURING TRANSPARENT CONDUCTIVE OXIDE (TCO) FILMS; PROPERTIES AND APPLICATIONS OF SUCH FILMS 审中-公开
标题翻译：制造透明导电氧化物（TCO）膜的方法; 这种膜的性质和应用
公开(公告)号：WO2010022530A1
公开(公告)日：2010-03-04
申请号：PCT/CH2009/000291
申请日：2009-08-28
申请人： OERLIKON SOLAR IP AG, TRÜBBACH , DIMITRY, Zimin , ZINDEL, Arno , TEREN, Andrew , WATKINS, Owan Charles , DESPONT, Laurent , WIDER, Joachim , RAMOINO, Luca , GOSSLA, Mario , VOGLER, Benjamin , KERSCHBAUMER, Joerg , SCHNEIDER, Stefan , MARK, Andreas , POPPELLER, Markus , KUHN, Hansjoerg , BORRELLO, Daniel , BENAGLI, Stefano , MEIER, Johannes , KROLL, Ulrich , VALLAT-SAUVAIN, Evelyne
发明人： DIMITRY, Zimin , ZINDEL, Arno , TEREN, Andrew , WATKINS, Owan Charles , DESPONT, Laurent , WIDER, Joachim , RAMOINO, Luca , GOSSLA, Mario , VOGLER, Benjamin , KERSCHBAUMER, Joerg , SCHNEIDER, Stefan , MARK, Andreas , POPPELLER, Markus , KUHN, Hansjoerg , BORRELLO, Daniel , BENAGLI, Stefano , MEIER, Johannes , KROLL, Ulrich , VALLAT-SAUVAIN, Evelyne
IPC分类号： C23C16/40 , C23C16/44 , H01L31/0224 , H01L31/0392 , H01L31/18 , H01L21/365
CPC分类号： C23C16/407 , C23C16/44 , H01L21/02422 , H01L21/02554 , H01L21/02573 , H01L21/0262 , H01L31/022483 , H01L31/075 , H01L31/1884 , Y02E10/548
摘要： A method for manufacturing a boron doped, transparent, conductive zinc oxide layer from on a substrate is disclosed. The layer is being deposited from at least diethylzinc, water and diborane by low pressure chemical vapour deposition (LPCVD) in a process chamber of a deposition system comprising wherein the gas flow ratio of diethylzinc and water is kept between 0.87 and 1.3 and the gas flow ratio of diborane and diethylzinc is being kept between 0.05 and 0.4. The haze of such manufactured layer, measured as ratio of diffuse transmittance to total transmittance at 600nm, is between 10 and 25%.
摘要翻译：公开了一种从衬底上制造硼掺杂的透明导电氧化锌层的方法。该层在沉积系统的处理室中通过低压化学气相沉积（LPCVD）从至少二乙基锌，水和乙硼烷沉积，其中二乙基锌和水的气体流量比保持在0.87和1.3之间，气流乙硼烷和二乙基锌的比例保持在0.05和0.4之间。以600nm处的扩散透射率与总透射率的比率测量的这种制造层的雾度在10％和25％之间。

5. 发明申请

WO2010022527A1 METHOD FOR DEPOSITING AN AMORPHOUS SILICON FILM FOR PHOTOVOLTAIC DEVICES WITH REDUCED LIGHT- INDUCED DEGRADATION FOR IMPROVED STABILIZED PERFORMANCE 审中-公开
标题翻译：用于具有降低的光诱导降解的光伏器件沉积非晶硅膜以提高稳定性能的方法
公开(公告)号：WO2010022527A1
公开(公告)日：2010-03-04
申请号：PCT/CH2009/000284
申请日：2009-08-26
申请人： OERLIKON SOLAR IP AG, TRÜBBACH , BENAGLI, Stefano , BORRELLO, Daniel , VALLAT-SAUVAIN, Evelyne , MEIER, Johannes , KROLL, Ulrich
发明人： BENAGLI, Stefano , BORRELLO, Daniel , VALLAT-SAUVAIN, Evelyne , MEIER, Johannes , KROLL, Ulrich
IPC分类号： H01L31/0392 , H01L31/075 , H01L31/20 , H01L31/0368
CPC分类号： H01L31/03685 , C23C16/24 , H01L31/03921 , H01L31/075 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A thin film photovoltaic device on a substrate is being realized by a method for manufacturing a p-i-n junction semiconductor layer stack with a p-type microcrystalline silicon layer, a p-type amorphous silicon layer, a buffer silicon layer comprising preferably intrinsic amorphous silicon, an intrinsic type amorphous silicon layer, and an n-type silicon layer over the intrinsic type amorphous silicon layer.
摘要翻译：通过用于制造具有p型微晶硅层，p型非晶硅层，优选本征非晶硅的缓冲硅层的pin结半导体层堆叠的方法来实现衬底上的薄膜光伏器件，本征型非晶硅层和本征型非晶硅层上的n型硅层。

6. 发明申请

WO2011033072A2 HIGH-EFFICIENCY AMORPHOUS SILICON PHOTOVOLTAIC DEVICES 审中-公开
标题翻译：高效无定形硅光电器件
公开(公告)号：WO2011033072A2
公开(公告)日：2011-03-24
申请号：PCT/EP2010/063714
申请日：2010-09-17
申请人： OERLIKON SOLAR AG, TRUEBBACH , BORRELLO, Daniel , VALLAT-SAUVAIN, Evelyne , BAILAT, Julien , KROLL, Ulrich , MEIER, Johannes , BENAGLI, Stefano , MARMELO, Miguel , MONTEDURO, Giovanni , HOETZEL, Jochen , STEINHAUSER, Jerome , LUCIE, Castens
发明人： BORRELLO, Daniel , VALLAT-SAUVAIN, Evelyne , BAILAT, Julien , KROLL, Ulrich , MEIER, Johannes , BENAGLI, Stefano , MARMELO, Miguel , MONTEDURO, Giovanni , HOETZEL, Jochen , STEINHAUSER, Jerome , LUCIE, Castens
IPC分类号： H01L31/0216
CPC分类号： H01L31/02168 , H01L31/022483 , H01L31/03685 , H01L31/03762 , H01L31/03921 , H01L31/0547 , H01L31/075 , H01L31/076 , H01L31/1884 , Y02E10/52 , Y02E10/545 , Y02E10/548
摘要： A method for manufacturing an amorphous silicon p-i-n solar cell is disclosed. The cell comprises an anti-reflection coating and doped LPCVD ZnO front and back contacts, wherein the doped LPCVD ZnO front and back contacts are polycrystalline films constituted of large grains whose extremities appear at the growing surface as pyramids. The method comprises: depositing said front contact by means of LPCVD; depositing the silicon layers of said p-i-n solar cell by means of plasma enhanced chemical vapor deposition; depositing said back contact by means of LPCVD; providing said anti-reflection coating. The amorphous silicon p-i-n solar cell can achieve a stabilized efficiency of 10.09%.
摘要翻译：公开了一种制造非晶硅p-i-n太阳能电池的方法。该电池包括抗反射涂层和掺杂的LPCVD ZnO前和后接触，其中掺杂的LPCVD ZnO前和后接触是由其末端以金字塔形式出现在生长表面的大颗粒构成的多晶膜。该方法包括：通过LPCVD沉积所述前端触点; 通过等离子体增强化学气相沉积沉积所述p-i-n太阳能电池的硅层; 通过LPCVD沉积所述背接触; 提供所述防反射涂层。非晶硅p-i-n太阳能电池可以实现10.09％的稳定效率。

7. 发明申请

WO2011033071A3 HIGH EFFICIENCY MICROMORPH TANDEM CELLS 审中-公开
公开(公告)号：WO2011033071A3
公开(公告)日：2011-03-24
申请号：PCT/EP2010/063712
申请日：2010-09-17
申请人： OERLIKON SOLAR AG, TRUEBBACH , VALLAT-SAUVAIN, Evelyne , BORRELLO, Daniel , BAILAT, Julien , MEIER, Johannes , KROLL, Ulrich , BENAGLI, Stefano , LUCIE, Castens , MONTEDURO, Giovanni , MARMELO, Miguel , HOETZEL, Jochen , DJERIDANE, Yassine , STEINHAUSER, Jerome , ORHAN, Jean-Baptiste
发明人： VALLAT-SAUVAIN, Evelyne , BORRELLO, Daniel , BAILAT, Julien , MEIER, Johannes , KROLL, Ulrich , BENAGLI, Stefano , LUCIE, Castens , MONTEDURO, Giovanni , MARMELO, Miguel , HOETZEL, Jochen , DJERIDANE, Yassine , STEINHAUSER, Jerome , ORHAN, Jean-Baptiste
IPC分类号： H01L31/18 , H01L31/076
摘要： A method for manufacturing a micromorph tandem cell is disclosed. The micromorph tandem cell comprises a μc-Si:H bottom cell and an a-Si:H top cell, an LPCVD ZnO front contact layer and a ZnO back contact in combination with a white reflector. The method comprises the steps of — applying an AR-Anti-Reflecting-concept to the micromorph tandem cell; — implementing an intermediate reflector in the micromorph tandem cell. The micromorph tandem cell can achieve a stabilized efficiency of 10.6%.

8. 发明申请

WO2011032878A2 METHOD FOR MANUFACTURING A THIN-FILM, SILICON BASED SOLAR CELL DEVICE 审中-公开
标题翻译：制造薄膜，硅基太阳能电池器件的方法
公开(公告)号：WO2011032878A2
公开(公告)日：2011-03-24
申请号：PCT/EP2010/063207
申请日：2010-09-09
申请人： OERLIKON SOLAR AG, TRUEBBACH , VALLAT-SAUVAIN, Evelyne , BORRELLO, Daniel , BENAGLI, Stefano , MONTEDURO, Giovanni , MARMELO, Miguel , KROLL, Ulrich , MEIER, Johannes
发明人： VALLAT-SAUVAIN, Evelyne , BORRELLO, Daniel , BENAGLI, Stefano , MONTEDURO, Giovanni , MARMELO, Miguel , KROLL, Ulrich , MEIER, Johannes
IPC分类号： H01L31/0236
CPC分类号： H01L31/202 , C03C15/00 , C03C23/001 , H01L31/02366 , H01L31/03921 , H01L31/075 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： The method of manufacturing a thin-film, silicon-based solar cell comprises providing a glass substrate/p-i-n-junction configuration with a glass/air interface. The glass surface of the air/glass interface is etched to provide for an antireflection effect as well as for a desired light scattering effect. In a first time span of etching antireflection ability is attained and by additional etching during a second time span an increased amount of light scattering.
摘要翻译：制造薄膜硅基太阳能电池的方法包括提供具有玻璃/空气界面的玻璃衬底/ p-i-n结构造。蚀刻空气/玻璃界面的玻璃表面以提供防反射效果以及所需的光散射效果。在蚀刻的第一时间段中，获得抗反射能力，并且通过在第二时间间隔期间的附加蚀刻增加光散射量。

9. 发明申请

WO2011033025A1 VERFAHREN UND ANORDNUNG ZUM EINSTELLEN EINES SOLARSIMULATORS 审中-公开
标题翻译：方法和装置，用于设定太阳模拟器
公开(公告)号：WO2011033025A1
公开(公告)日：2011-03-24
申请号：PCT/EP2010/063624
申请日：2010-09-16
申请人： OERLIKON SOLAR AG, TRÜBBACH , ADELHELM, Ralf , MEIER, Johannes
发明人： ADELHELM, Ralf , MEIER, Johannes
IPC分类号： G01J1/08 , G01J3/02 , G01J3/51 , F21S8/00 , G01R31/26
CPC分类号： G01J1/08 , F21S8/006 , G01J1/0266 , G01J1/0488 , G01J3/02 , G01J3/0213 , G01J3/51 , G01J3/513
摘要： Die vorliegende Erfindung betrifft ein Verfahren zum Einstellen eines Solarsimulators (12), insbesondere zum Einstellen der spektralen Bestrahlungsstärke eines Solarsimulators (12). Mit dem erfindungsgemäßen Verfahren kann insbesondere die spektrale Bestrahlungsstärke sehr genau eingestellt werden, was beispielsweise ein darauffolgendes Vermessen einer Solarzelle mit Bezug auf ihre opto-elektronischen Eigenschaften verbessert. Das Verfahren umfasst erfindungsgemäß die Schritte: a) Anordnen eines Solarsimulators in einer Ebene E1; b) Anordnen wenigstens zweier Detektoren in einer Testebene E2, wobei die Testebene E2 einen definierten Abstand A1 zu der Ebene E1 aufweist, und wobei die Detektoren eine spektrale Empfindlichkeit in einem jeweils unterschiedlichen spektralen Bereich aufweisen; c) Bestrahlen der wenigstens zwei Detektoren mit Licht eines Wellenlängenbereichs von 250nm bis 4μm, insbesondere 300nm-1900nm, besonders bevorzugt 300nm-1200nm; d) Verändern des Abstands A1 oder Einstellen der Lampenleistung des Solarsimulators derart, dass der erste Detektor einen definierten Sollwert erreicht; e) Überprüfen des Ist-Werts des zweiten Detektors (18); f) Verkleinern des Abstands A1 und Verringern der Lampenleistung des Solarsimulators für den Fall, dass das eingestrahlte Licht zu kurzwellig ist, oder Vergrößern des Abstands A1 und Vergrößern der Lampenleistung des Solarsimulators für den Fall, dass das eingestrahlte Licht zu langwellig ist, und g) Wiederholen der Schritte d) bis f) für den Fall, dass die Ist-Werte der Detektoren) von ihren Sollwerten abweichen.
摘要翻译：本发明涉及一种用于设置的太阳能模拟器（12），特别是用于调整太阳模拟器（12）的光谱辐射能的方法。本发明的方法中，光谱辐射强度可以被设置在特定的非常精确，从而改善，例如，太阳能电池的相对于它的光电性能的后续测量。根据本发明的方法包括以下步骤：a）设置在一个平面E1的太阳模拟器; b）将至少两个检测器在测试平面E2，其中，所述测试电平E2具有从A1到水平E1，和一个限定的距离，其中，所述检测器具有在每种情况下不同光谱区域的光谱灵敏度; C）照射至少两个检测器，波长范围为250nm〜4微米的光，特别是300nm的-1900nm，更优选为300nm-1200nm的; D）改变距离A1或调整太阳模拟器，使得第一检测器已经达到所定义的目标值的灯的功率。 E）第二检测器的实际值的检查（18）; F）降低的间距A1和的情况下的太阳模拟器的灯功率，其中所照射的光太短波状，或增大距离A1和增加的情况下的太阳模拟器，其中照射光太长波状的灯功率的减小，以及g）重复在事件步骤d）至f），该检测器的）的实际值从它们的标称值偏离。

10. 发明申请

WO2009127714A2 PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING A PHOTOVOLTAIC DEVICE 审中-公开
标题翻译：光伏器件及制造光伏器件的方法
公开(公告)号：WO2009127714A2
公开(公告)日：2009-10-22
申请号：PCT/EP2009/054577
申请日：2009-04-17
申请人： OERLIKON TRADING AG, TRUEBBACH , MEIER, Johannes , KROLL, Ulrich , BAILAT, Julien
发明人： MEIER, Johannes , KROLL, Ulrich , BAILAT, Julien
IPC分类号： H01L31/075 , H01L31/0368
CPC分类号： H01L31/076 , Y02E10/548
摘要： The photovoltaic device comprises a substrate, deposited on said substrate, a first contact layer; a second contact layer; between said first and second contact layers: a first layer stack comprising a first p-doped layer, a first at least substantially intrinsic layer of amorphous hydrogenated silicon and a first n-doped layer; a second layer stack comprising a second p-doped layer, a second at least substantially intrinsic layer of microcrystalline hydrogenated silicon and a second n- doped layer. The thickness of the first at least substantially intrinsic layer is between 160 nm and 400 nm, and the thickness of the second at least substantially intrinsic layer is between 1 μm and 2 μm.
摘要翻译：光伏器件包括沉积在所述衬底上的衬底，第一接触层; 第二接触层; 在第一和第二接触层之间：第一层堆叠，包括第一p掺杂层，第一至少基本上本征的非晶氢化硅层和第一n掺杂层; 第二层堆叠，包括第二p掺杂层，第二至少基本上本征的微晶氢化硅层和第二n-掺杂层。第一至少基本上本征层的厚度在160nm和400nm之间，并且第二至少基本上本征层的厚度在1μm和2μm之间。

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