专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2009101573A2 LIGHTING UNIT WITH COMPENSATION FOR OUTPUT FREQUENCY, AND METHOD FOR DETERMINING OUTPUT FREQUENCY 审中-公开
标题翻译：具有输出频率补偿的照明单元，以及确定输出频率的方法
公开(公告)号：WO2009101573A2
公开(公告)日：2009-08-20
申请号：PCT/IB2009050531
申请日：2009-02-09
申请人： NXP BV , SURDEANU RADU , NGUYEN HOANG VIET , BATAILLOU BENOIT , BANCKEN PASCAL , VAN STEENWINCKEL DAVID
发明人： SURDEANU RADU , NGUYEN HOANG VIET , BATAILLOU BENOIT , BANCKEN PASCAL , VAN STEENWINCKEL DAVID
IPC分类号： H05B33/08
CPC分类号： H05B33/0866
摘要： A method of determining the dominant output wavelength of an LED, comprises determining an electrical characteristic of the LED which is dependent on the voltage-capacitance characteristics, and analysing the characteristic to determine the dominant output wavelength.
摘要翻译：确定LED的主输出波长的方法包括确定取决于电压 - 电容特性的LED的电特性，并分析该特性以确定主输出波长。

2. 发明申请

WO2009095853A3 SYSTEM AND METHOD FOR ESTIMATING THE JUNCTION TEMPERATURE OF A LIGHT EMITTING DIODE 审中-公开
标题翻译：用于估计发光二极管的连接温度的系统和方法
公开(公告)号：WO2009095853A3
公开(公告)日：2010-03-11
申请号：PCT/IB2009050325
申请日：2009-01-27
申请人： NXP BV , NGUYEN HOANG VIET , SURDEANU RADU , BANCKEN PASCAL , BATAILLOU BENOIT , VAN STEENWINCKEL DAVID
发明人： NGUYEN HOANG VIET , SURDEANU RADU , BANCKEN PASCAL , BATAILLOU BENOIT , VAN STEENWINCKEL DAVID
IPC分类号： H05B33/08
CPC分类号： H05B33/0818 , G01K7/01 , H05B33/0866 , H05B33/089
摘要： A method of estimating the junction temperature of a light emitting diode comprises driving a forward bias current through the diode, the current comprising a square wave which toggles between high and low current values (Ihigh, lIow), the high current value (lh?gh) comprising an LED operation current, and the low current value (IIOW) comprising a non-zero measurement current. The forward bias voltage drop (Vf) is sampled and the forward bias voltage drop (VfIow) is determined at the measurement current (IIOW)- The temperature is derived from the determined forward bias voltage drop.
摘要翻译：估计发光二极管的结温的方法包括驱动通过二极管的正向偏置电流，该电流包括在高电流值和低电流值（Ihigh，lIow）之间切换的方波，高电流值（lh？gh ）包括LED操作电流，以及包括非零测量电流的低电流值（IIOW）。正向偏置电压降（Vf）被采样，并且在测量电流（IIOW）下确定正向偏置电压降（VfIow）。 - 从确定的正向偏压电压降导出温度。

3. 发明申请

WO2008015635A2 PHOTOLITHOGRAPHY 审中-公开
标题翻译：光刻
公开(公告)号：WO2008015635A2
公开(公告)日：2008-02-07
申请号：PCT/IB2007053014
申请日：2007-07-31
申请人： NXP BV , KWINTEN HANS , ZANDBERGEN PETER , VAN STEENWINCKEL DAVID , VANLEENHOVE ANJA
发明人： KWINTEN HANS , ZANDBERGEN PETER , VAN STEENWINCKEL DAVID , VANLEENHOVE ANJA
IPC分类号： G03F7/004
CPC分类号： G03F7/38
摘要： The invention relates to a method of photolithography comprising the steps of: providing a substrate and forming a layer of a photoresist (100) on the substrate, performing a first exposure (120) in which a predetermined part of the layer of photoresist is irradiated through a mask having a pattern for forming a latent image of said pattern in the layer of the photoresist, performing a pretreatment (130) on the layer of the photoresist to remove a predetermined part of the latent image before performing the fixation (140). The method provides an improved process window. The invention further relates to a photoresist for use within the method of the invention.
摘要翻译：本发明涉及一种光刻方法，该方法包括以下步骤：提供衬底并在衬底上形成光致抗蚀剂层（100），执行第一次曝光（120），其中光致抗蚀剂层的预定部分被照射穿过具有用于在所述光致抗蚀剂层中形成所述图案的潜像的图案的掩模，在执行所述定影之前对所述光致抗蚀剂层执行预处理（130）以去除所述潜像的预定部分（140）。该方法提供了改进的过程窗口。本发明还涉及用于本发明方法中的光刻胶。

4. 发明申请

WO2008059440A3 DOUBLE PATTERNING FOR LITHOGRAPHY TO INCREASE FEATURE SPATIAL DENSITY 审中-公开
标题翻译：用于光刻的双重图案增加特征空间密度
公开(公告)号：WO2008059440A3
公开(公告)日：2008-08-21
申请号：PCT/IB2007054604
申请日：2007-11-13
申请人： NXP BV , VANLEENHOVE ANJA MONIQUE , DIRKSEN PETER , VAN STEENWINCKEL DAVID , VAN DAL MARK , DOORNBOS GERBEN , JUFFERMANS CASPER
发明人： VANLEENHOVE ANJA MONIQUE , DIRKSEN PETER , VAN STEENWINCKEL DAVID , VAN DAL MARK , DOORNBOS GERBEN , JUFFERMANS CASPER
IPC分类号： G03F7/00 , G03F7/11
CPC分类号： G03F7/0035 , G03F7/11 , H01L21/0271 , H01L21/0273 , H01L21/823821 , H01L29/66795 , H01L29/6681 , H01L29/785
摘要： A method of forming a pattern in at least one device layer in or on a substrate comprises: coating the device layer with a first photoresist layer; exposing the first photoresist using a first mask; developing the first photoresist layer to form a first pattern on the substrate; coating the substrate with a protection layer; treating the protection layer to cause a change therein where it is in contact with the first photoresist, to render the changed protection layer substantially immune to a subsequent exposure and / or developing step; coating the substrate with a second photoresist layer; exposing the second photoresist layer using a second mask; and developing the second photoresist layer to form a second pattern on the substrate without significantly affecting the first pattern in the first photoresist layer, wherein the first and second patterns together define interspersed features having a spatial frequency greater than that of the features defined in each of the first and second patterns separately. The process has particular utility in defining source, drain and fin features of finFET devices with a smaller feature size than otherwise achievable with the prevailing lithography tools.
摘要翻译：一种在衬底中或衬底上的至少一个器件层中形成图案的方法包括：用第一光刻胶层涂覆器件层; 使用第一掩模来暴露第一光致抗蚀剂; 显影第一光致抗蚀剂层以在衬底上形成第一图案; 用保护层涂覆衬底; 处理所述保护层以在其中与所述第一光刻胶接触的地方引起其中的变化，以使所述变化的保护层基本上不受后续曝光和/或显影步骤的影响; 用第二光致抗蚀剂层涂覆衬底; 使用第二掩模曝光第二光致抗蚀剂层; 以及显影所述第二光致抗蚀剂层以在所述衬底上形成第二图案而不显着影响所述第一光致抗蚀剂层中的所述第一图案，其中所述第一图案和所述第二图案一起限定具有大于每个图案中限定的特征的空间频率的散布特征第一和第二图案分开。该工艺在定义finFET器件的源极，漏极和鳍片特征方面具有特别的实用性，其特征尺寸小于通用光刻工具所能实现的特征尺寸。

5. 发明申请

WO2005064409A2 REMOVABLE PELLICLE FOR IMMERSION LITHOGRAPHY 审中-公开
标题翻译：可移除胶片用于浸没式光刻
公开(公告)号：WO2005064409A2
公开(公告)日：2005-07-14
申请号：PCT/IB2004052886
申请日：2004-12-22
申请人： KONINKL PHILIPS ELECTRONICS NV , DIRKSEN PETER , MORTON ROBERT D , ZANDBERGEN PETER , VAN STEENWINCKEL DAVID , AKSENOV YURI , LAMMERS JEROEN H , VAN WINGERDEN JOHANNES , MARINIER LAURENT
发明人： DIRKSEN PETER , MORTON ROBERT D , ZANDBERGEN PETER , VAN STEENWINCKEL DAVID , AKSENOV YURI , LAMMERS JEROEN H , VAN WINGERDEN JOHANNES , MARINIER LAURENT
IPC分类号： G03F7/20
CPC分类号： G03F7/70341 , G03F7/70983
摘要： A method of irradiating to pattern a photosensitive layer such as a resist (L2) immersed in a fluid (L3), involves applying a removable transparent layer (L4, L5), projecting the radiation onto the resist through the immersion fluid and through the transparent layer, such that imperfections in the fluid are out of focus as projected on the surface, and subsequently removing the transparent layer. The transparent layer can help distance such imperfections from the focus of the radiation on the surface and so can reduce or eliminate shadowing. Hence the irradiation can be more complete, and defects reduced. It can be particularly effective for imperfections in the form of small bubbles or particles in the immersion fluid especially at the fluid/surface interface for example. The radiation can be for any purpose including inspection, processing, patterning and so on. The removal of the transparent layer can be combined with a step of developing the resist layer.
摘要翻译：一种照射方法来照射浸没在流体（L3）中的抗蚀剂（L2）的感光层，包括施加可去除的透明层（L4，L5），通过浸没流体将辐射投射到抗蚀剂上，并通过透明使得流体中的缺陷如投射在表面上而失焦，随后去除透明层。透明层可以帮助将这种缺陷从辐射的焦点远离在表面上，因此可以减少或消除阴影。因此，照射可以更完整，并且缺陷减少。对于浸入液体中的小气泡或颗粒形式的缺陷，特别是在流体/表面界面处的缺陷可能特别有效。辐射可以用于任何目的，包括检查，加工，图案化等。可以将透明层的去除与显影抗蚀剂层的步骤组合。

6. 发明申请

WO2006056905A3 LITHOGRAPHIC METHOD 审中-公开
标题翻译：光刻方法
公开(公告)号：WO2006056905A3
公开(公告)日：2007-08-30
申请号：PCT/IB2005053700
申请日：2005-11-10
申请人： KONINKL PHILIPS ELECTRONICS NV , VAN STEENWINCKEL DAVID , ZANDBERGEN PETER
发明人： VAN STEENWINCKEL DAVID , ZANDBERGEN PETER
IPC分类号： G03F7/30 , G03F7/32
CPC分类号： G03F7/30 , G03F7/095 , G03F7/32
摘要： A method of achieving frequency doubled lithographic patterning is described. An optical pattern (16) having a first period (p 1 ) is used to expose conventional acid-catalysed photoresist (18) on substrate (20), leaving regions of high exposure (24), regions of low exposure (26) and intermediate regions (22). Processing proceeds leaving regions (24) which received high exposure very polar, i.e. hydrophilic, regions (26) of low exposure very apolar, i.e. hydrophobic, and the intermediate regions having intermediate polarity. A developer of intermediate polarity such as propylene glycol methyl ether acetate is then used to dissolve only the intermediate regions (22) leaving photoresist patterned to have a pitch (p 2 ) half that of the optical period (p 1 ). Alternatively, the photoresist is removed from the apolar and polar regions leaving only the intermediate regions (22) again with the same pitch (p 2 ) half that of the optical period (p 1 ).
摘要翻译：描述了实现倍频光刻图案化的方法。使用具有第一周期（p <1> 1）的光学图案（16）来曝光基底（20）上的常规酸催化光致抗蚀剂（18），留下高曝光区域（24）低暴露（26）和中间区域（22）。处理进行离开区域（24），其接收高暴露非常极性，即亲水性低暴露非极性，即疏水性的区域（26），并且具有中等极性的中间区域。然后使用中等极性的显影剂，例如丙二醇甲基醚乙酸酯，仅溶解中间区域（22），使光致抗蚀剂图案化成具有光学周期（p）的一半的间距（p <2> 2） _{1 ）。或者，光致抗蚀剂从非极性区域和极性区域移除，仅使中间区域（22）再次以光学周期（p 1 ）。}

7. 发明申请

WO2006137011A3 METHODS AND DEVICES FOR CHARACTERIZING POLARIZATION OF ILLUMINATION SYSTEM 审中-公开
标题翻译：用于表征照明系统极化的方法和装置
公开(公告)号：WO2006137011A3
公开(公告)日：2007-07-05
申请号：PCT/IB2006051979
申请日：2006-06-20
申请人： KONINKL PHILIPS ELECTRONICS NV , AKSENOV YURI , DIRKSEN PETER , ZANDBERGEN PETER , BENNDORF MICHAEL , VAN STEENWINCKEL DAVID
发明人： AKSENOV YURI , DIRKSEN PETER , ZANDBERGEN PETER , BENNDORF MICHAEL , VAN STEENWINCKEL DAVID
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： G03F7/7085 , G03F1/44 , G03F7/70058 , G03F7/70566
摘要： In a method for evaluating the polarization state of an illumination system (52) in an optical system (50), a mask (56) is provided in the optical system (50) such that an illumination beam incident on the mask (56) is adapted such as to substantially differently diffract incident components of a light beam having different polarization states. An image of the mask (56) is then obtained, using an illumination beam of the illumination system (52) of the optical system (50). The obtained image, being either an intensity plot or a structure created in a resist layer by exposing the resist layer with the image of the mask (56), is then used to extract polarization related information about the illumination system (52). The image used for evaluating may be a diffraction image of the mask.
摘要翻译：在用于评估光学系统（50）中的照明系统（52）的偏振状态的方法中，在光学系统（50）中设置掩模（56），使得入射到掩模（56）上的照明光束是适于使得具有不同极化状态的光束的入射分量基本不同的衍射。然后使用光学系统（50）的照明系统（52）的照明光束获得掩模（56）的图像。所获得的图像是强度图或通过用掩模（56）的图像曝光抗蚀剂层在抗蚀剂层中产生的结构，然后用于提取关于照明系统（52）的偏振相关信息。用于评估的图像可以是掩模的衍射图像。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式