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    • 8. 发明申请
    • DETERMINING IMAGE BLUR IN AN IMAGING SYSTEM
    • 在成像系统中确定图像图像
    • WO2005083525A3
    • 2006-05-18
    • PCT/IB2005050496
    • 2005-02-08
    • KONINKL PHILIPS ELECTRONICS NVDIRKSEN PETERJANSSEN AUGUSTUS J E MBRAAT JOSEPHUS J MLEEUWESTEIN ADRIAAN
    • DIRKSEN PETERJANSSEN AUGUSTUS J E MBRAAT JOSEPHUS J MLEEUWESTEIN ADRIAAN
    • G03F7/20
    • G03F7/70608G03F7/706
    • The invention relates to a method of determining a parameter relating to image blur in an imaging system (IS) comprising the step of illuminating an object having a test pattern (MTP) by means of the imaging system (IS), thereby forming an image of the test pattern,. The test pattern (MTP) has a size smaller than the resolution of the imaging system (IS), which makes the image of the test pattern independent of illuminator aberrations. The test pattern (MTP) is an isolated pattern, which causes the image to be free of optical proximity effects. The image is blurred due to stochastic fluctuations in the imaging system and/or in the detector detecting the blurred image. The parameter relating to the image blur is determined from a parameter relating to the shape of the blurred image. According to the invention, resist diffusion and/or focus noise may be characterized. In the method of designing a mask, the parameter relating to the image blur due to diffusion in the resist is taken into account. The computer program according to the invention is able to execute the step of determining the parameter relating to the image blur from a parameter relating to a shape of the blurred image.
    • 本发明涉及一种确定与成像系统(IS)中的图像模糊相关的参数的方法,包括通过成像系统(IS)照亮具有测试图案(MTP)的对象的步骤,从而形成图像 测试模式。 测试图案(MTP)的尺寸小于成像系统(IS)的分辨率,这使得测试图案的图像与照明器像差无关。 测试图案(MTP)是一种孤立的图案,使图像无光学邻近效应。 图像由于成像系统中的随机波动和/或检测模糊图像的检测器而模糊。 根据与模糊图像的形状相关的参数确定与图像模糊有关的参数。 根据本发明,可以表征抗蚀剂扩散和/或聚焦噪声。 在设计掩模的方法中,考虑与抗蚀剂中的扩散引起的图像模糊有关的参数。 根据本发明的计算机程序能够执行从与模糊图像的形状相关的参数确定与图像模糊有关的参数的步骤。
    • 10. 发明申请
    • DOUBLE PATTERNING FOR LITHOGRAPHY TO INCREASE FEATURE SPATIAL DENSITY
    • 用于光刻的双重图案增加特征空间密度
    • WO2008059440A3
    • 2008-08-21
    • PCT/IB2007054604
    • 2007-11-13
    • NXP BVVANLEENHOVE ANJA MONIQUEDIRKSEN PETERVAN STEENWINCKEL DAVIDVAN DAL MARKDOORNBOS GERBENJUFFERMANS CASPER
    • VANLEENHOVE ANJA MONIQUEDIRKSEN PETERVAN STEENWINCKEL DAVIDVAN DAL MARKDOORNBOS GERBENJUFFERMANS CASPER
    • G03F7/00G03F7/11
    • G03F7/0035G03F7/11H01L21/0271H01L21/0273H01L21/823821H01L29/66795H01L29/6681H01L29/785
    • A method of forming a pattern in at least one device layer in or on a substrate comprises: coating the device layer with a first photoresist layer; exposing the first photoresist using a first mask; developing the first photoresist layer to form a first pattern on the substrate; coating the substrate with a protection layer; treating the protection layer to cause a change therein where it is in contact with the first photoresist, to render the changed protection layer substantially immune to a subsequent exposure and / or developing step; coating the substrate with a second photoresist layer; exposing the second photoresist layer using a second mask; and developing the second photoresist layer to form a second pattern on the substrate without significantly affecting the first pattern in the first photoresist layer, wherein the first and second patterns together define interspersed features having a spatial frequency greater than that of the features defined in each of the first and second patterns separately. The process has particular utility in defining source, drain and fin features of finFET devices with a smaller feature size than otherwise achievable with the prevailing lithography tools.
    • 一种在衬底中或衬底上的至少一个器件层中形成图案的方法包括:用第一光刻胶层涂覆器件层; 使用第一掩模来暴露第一光致抗蚀剂; 显影第一光致抗蚀剂层以在衬底上形成第一图案; 用保护层涂覆衬底; 处理所述保护层以在其中与所述第一光刻胶接触的地方引起其中的变化,以使所述变化的保护层基本上不受后续曝光和/或显影步骤的影响; 用第二光致抗蚀剂层涂覆衬底; 使用第二掩模曝光第二光致抗蚀剂层; 以及显影所述第二光致抗蚀剂层以在所述衬底上形成第二图案而不显着影响所述第一光致抗蚀剂层中的所述第一图案,其中所述第一图案和所述第二图案一起限定具有大于每个图案中限定的特征的空间频率的散布特征 第一和第二图案分开。 该工艺在定义finFET器件的源极,漏极和鳍片特征方面具有特别的实用性,其特征尺寸小于通用光刻工具所能实现的特征尺寸。