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1. 发明申请

WO2006014472A1 III-NITRIDE MATERIALS INCLUDING LOW DISLOCATION DENSITIES AND METHODS ASSOCIATED WITH THE SAME 审中-公开
标题翻译：三氮化物材料包括低偏差密度和与之相关的方法
公开(公告)号：WO2006014472A1
公开(公告)日：2006-02-09
申请号：PCT/US2005/023934
申请日：2005-07-06
申请人： NITRONEX CORPORATION , PINER, Edwin, L. , ROBERTS, John, Claassen , RAJAGOPAL, Pradeep
发明人： PINER, Edwin, L. , ROBERTS, John, Claassen , RAJAGOPAL, Pradeep
IPC分类号： C30B29/40
CPC分类号： C30B29/403 , C30B25/02 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/0251 , H01L21/02513 , H01L21/0254 , H01L21/02543
摘要： Semiconductor structures including one, or more, III-nitride material regions (e.g., gallium nitride material region) and methods associated with such structures are provided. The III-nitride material regions) advantageously have a low dislocation density and, in particular, a low screw dislocation density. In some embodiments, the presence of screw dislocations in the III-nitride material regions) may be essentially eliminated. The presence of a strain-absorbing layer underlying the III-nitride material regions) and/or processing conditions can contribute to achieving the low screw dislocation densities. In some embodiments, the III-nitride material regions) having low dislocation densities include a gallium nitride material region which functions as the active region of the device. The low screw dislocation densities of the active device region (e.g., gallium nitride material region) can lead to improved properties (e.g., electrical and optical) by increasing electron transport, limiting non-radiative recombination, and increasing compositional/growth uniformity, amongst other effects.
摘要翻译：提供包括一个或多个III族氮化物材料区域（例如，氮化镓材料区域）的半导体结构以及与这种结构相关联的方法。 III族氮化物材料区域）有利地具有低位错密度，特别是低螺旋位错密度。在一些实施例中，可以基本上消除III族氮化物材料区域中的螺旋位错的存在）。存在III族氮化物材料区域下方的应变吸收层）和/或加工条件可有助于实现低螺旋位错密度。在一些实施例中，具有低位错密度的III族氮化物材料区域包括用作器件的有源区的氮化镓材料区域。活性器件区域（例如，氮化镓材料区域）的低螺旋位错密度可以通过增加电子传输，限制非辐射复合和增加组成/生长均匀性等而导致改进的性能（例如电和光学）效果。

2. 发明申请

WO2006060738A3 III-NITRIDE MATERIAL STRUCTURES INCLUDING SILICON SUBSTRATES 审中-公开
公开(公告)号：WO2006060738A3
公开(公告)日：2006-06-08
申请号：PCT/US2005/043810
申请日：2005-12-05
申请人： NITRONEX CORPORATION , HANSON, Alan, W. , ROBERTS, John, Claassen , PINER, Edwin, L. , RAJAGOPAL, Pradeep
发明人： HANSON, Alan, W. , ROBERTS, John, Claassen , PINER, Edwin, L. , RAJAGOPAL, Pradeep
IPC分类号： H01L29/20 , H01L29/778 , H01L29/02 , H01L29/267
摘要： III-nitride material structures including silicon substrates, as well as methods associated with the same, are described. Parasitic losses in the structures may be significantly reduced which is reflected in performance improvements. Devices (such as RF devices) formed of structures of the invention may have higher output power, power gain and efficiency, amongst other advantages.

3. 发明申请

WO2005060007A1 GALLIUM NITRIDE MATERIAL TRANSISTORS AND METHODS ASSOCIATED WITH THE SAME 审中-公开
标题翻译：氮化镓材料晶体管及其相关方法
公开(公告)号：WO2005060007A1
公开(公告)日：2005-06-30
申请号：PCT/US2004/025433
申请日：2004-08-05
申请人： NITRONEX CORPORATION , THERRIEN, Robert, Joseph , SINGHAL, Sameer , BROWN, Jeffrey, David , NAGY, Walter, H. , BORGES, Ricardo, M. , CHAUDHARI, Apurva, D. , COOK, James, W., Jr. , HANSON, Allen, W. , JOHNSON, Jerry, W. , LINTHICUM, Kevin, J. , PINER, Edwin, L. , RAJAGOPAL, Pradeep , ROBERTS, John, C. , VESCAN, Andrei
发明人： THERRIEN, Robert, Joseph , SINGHAL, Sameer , BROWN, Jeffrey, David , NAGY, Walter, H. , BORGES, Ricardo, M. , CHAUDHARI, Apurva, D. , COOK, James, W., Jr. , HANSON, Allen, W. , JOHNSON, Jerry, W. , LINTHICUM, Kevin, J. , PINER, Edwin, L. , RAJAGOPAL, Pradeep , ROBERTS, John, C. , VESCAN, Andrei
IPC分类号： H01L29/778
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/7787
摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.
摘要翻译：提供了氮化镓材料晶体管及与之相关的方法。晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

4. 发明申请

WO2006127227A2 GALLIUM NITRIDE MATERIAL STRUCTURES INCLUDING SUBSTRATES AND METHODS ASSOCIATED WITH THE SAME 审中-公开
标题翻译：氮化钛材料结构包括基材和与之相关的方法
公开(公告)号：WO2006127227A2
公开(公告)日：2006-11-30
申请号：PCT/US2006/017098
申请日：2006-05-03
申请人： NITRONEX CORPORATION , PINER, Edwin, L. , RAJAGOPAL, Pradeep , ROBERTS, John, C. , LINTHICUM, Kevin, J.
发明人： PINER, Edwin, L. , RAJAGOPAL, Pradeep , ROBERTS, John, C. , LINTHICUM, Kevin, J.
IPC分类号： H01L29/267 , H01L29/778 , H01L21/335 , H01L21/84 , H01L21/20 , H01L21/18
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02513 , H01L29/2003 , H01L29/267 , H01L29/66462 , H01L29/7783
摘要： Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The gallium nitride material structures may include additional features, such as strain-absorbing layers and/or transition layers, which also promote favorable stress conditions. The reduction in stresses may reduce defect formation and cracking in the gallium nitride material region, as well as reducing warpage of the overall structure. The gallium nitride material-based semiconductor structures may be used in a variety of applications such as transistors (e.g. FETs) Schottky diodes, light emitting diodes, laser diodes, SAW devices, and sensors, amongst others devices.
摘要翻译：提供了氮化镓材料基半导体结构。在一些实施例中，结构包括复合衬底，氮化镓材料区域形成在复合衬底上。氮化镓材料结构可以包括另外的特征，例如应变吸收层和/或过渡层，其也促进有利的应力条件。应力的降低可以减少氮化镓材料区域中的缺陷形成和开裂，同时减少整个结构的翘曲。氮化镓材料基半导体结构可用于诸如晶体管（例如FET）肖特基二极管，发光二极管，激光二极管，SAW器件和传感器等各种应用中。

5. 发明申请

WO2006012293A1 GALLIUM NITRIDE STRUCTURES INCLUDIING ISOLATION REGIONS 审中-公开
标题翻译：含氮隔离结构包括隔离区
公开(公告)号：WO2006012293A1
公开(公告)日：2006-02-02
申请号：PCT/US2005/022470
申请日：2005-06-24
申请人： NITRONEX CORPORATION , JOHNSON, Jerry, W. , BORGES, Ricardo , BROWN, Jeffrey, D. , COOK, James, W., Jr. , HANSON, Allen, W. , PINER, Edwin, L. , RAJAGOPAL, Pradeep , ROBERTS, John, C. , SINGHAL, Sameer , THERRIEN, Robert, J. , VESCAN, Andrei
发明人： JOHNSON, Jerry, W. , BORGES, Ricardo , BROWN, Jeffrey, D. , COOK, James, W., Jr. , HANSON, Allen, W. , PINER, Edwin, L. , RAJAGOPAL, Pradeep , ROBERTS, John, C. , SINGHAL, Sameer , THERRIEN, Robert, J. , VESCAN, Andrei
IPC分类号： H01L21/76
CPC分类号： H01L29/7787 , H01L21/28587 , H01L21/7605 , H01L29/2003 , H01L29/66212 , H01L29/66462 , H01L29/872
摘要： Gallium nitride material structures, including devices, and methods associated with the same are provided. In some embodiments, the structures include one or more isolation regions which electrically isolate adjacent devices. One aspect of the invention is the discovery that the isolation regions also can significantly reduce the leakage current of devices (e.g., transistors) made from the structures, particularly devices that also include a passivating layer formed on a surface of the gallium nitride material. Lower leakage currents can result in increased power densities and operating voltages, amongst other advantages.
摘要翻译：提供了氮化镓材料结构，包括器件，以及与之相关的方法。在一些实施例中，结构包括一个或多个隔离相邻器件的隔离区域。本发明的一个方面是发现隔离区域还可以显着地减少由结构制成的器件（例如，晶体管）的泄漏电流，特别是还包括形成在氮化镓材料表面上的钝化层的器件。较低的漏电流可以导致增加的功率密度和工作电压以及其它优点。

6. 发明申请

WO2006012300A1 SEMICONDUCTOR DEVICE-BASED SENSORS AND METHODS ASSOCIATED WITH THE SAME 审中-公开
标题翻译：基于半导体器件的传感器和与之相关的方法
公开(公告)号：WO2006012300A1
公开(公告)日：2006-02-02
申请号：PCT/US2005/022490
申请日：2005-06-24
申请人： NITRONEX CORPORATION , JOHNSON, Jerry, W. , PINER, Edwin, L. , LINTHICUM, Kevin, J.
发明人： JOHNSON, Jerry, W. , PINER, Edwin, L. , LINTHICUM, Kevin, J.
IPC分类号： G01N27/414
CPC分类号： G01N27/129 , G01N27/4148 , H01L2224/48091 , H01L2924/00014
摘要： Semiconductor device-based chemical sensors and methods associated with the same are provided. The sensors include regions that can interact with chemical species being detected and that are separated from the electrodes of the semiconductor device. The chemical species may, for example, be a component of a fluid (e.g., gas or liquid). The interaction between the chemical species and a region of the sensor causes a change in a measurable property (e.g., an electrical property) of the device. These changes may be related to the concentration of the chemical species in the medium being characterized.
摘要翻译：提供了基于半导体器件的化学传感器和与之相关的方法。传感器包括可以与被检测的化学物质相互作用并且与半导体器件的电极分离的区域。化学物质可以例如是流体（例如气体或液体）的组分。化学物质和传感器的区域之间的相互作用导致装置的可测量性质（例如，电气性能）的改变。这些变化可能与所述介质中化学物质的浓度有关。

7. 发明申请

WO2002069410A2 GALLIUM NITRIDE MATERIAL DEVICES AND METHODS INCLUDING BACKSIDE VIAS 审中-公开
标题翻译：包括背面VIAS的氮化镓材料装置和制造方法
公开(公告)号：WO2002069410A2
公开(公告)日：2002-09-06
申请号：PCT/US2002/005182
申请日：2002-02-22
申请人： NITRONEX CORPORATION
发明人： WEEKS, T., Warren , PINER, Edwin, L. , BORGES, Ricardo, M. , LINTHICUM, Kevin, M.
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L29/0657 , H01L29/2003 , H01L29/417 , H01L29/802 , H01L29/861 , H01L33/0079 , H01L33/32 , H01L33/382 , H01L47/026 , H01L2924/10155
摘要： The invention includes providing gallium nitride material devices having backside vias and methods to form the devices. The devices include a gallium nitride material formed over a substrate, such as silicon. The device also may include one or more non-conducting layers between the substrate and the gallium nitride material which can aid in the deposition of the gallium nitride material. A via is provided which extends from the backside of the device through the non-conducting layer(s) to enable electrical conduction between an electrical contact deposited within the via and, for example, an electrical contact on the topside of the device. Thus, devices of the invention may be vertically conducting. In other cases, the vias may be free of electrical contacts, for example, to enhance light extraction. Exemplary devices include laser diodes (LDs), light emitting diodes (LEDs), power rectifier diodes, FETs(e.g., HFETs), Gunn-effect diodes, and varactor diodes, amongst others.
摘要翻译：本发明包括提供具有背面通孔的氮化镓材料器件和形成器件的方法。这些器件包括形成在诸如硅的衬底（12）之上的氮化镓材料（14）。该装置还可以包括在衬底（12）和氮化镓材料（14）之间的一个或多个非导电层（15），其可帮助氮化镓材料的沉积。提供了一种通孔（24），其从器件的背面（22）穿过非导电层（15）延伸，以使得能够在沉积在通孔（21）内的电触头（20）之间进行导电，例如，设备顶部上的电触点（16）。因此，本发明的装置可以是垂直导电的。在其他情况下，通孔可以没有电接触，例如，以增强光提取。示例性器件包括激光二极管（LD），发光二极管（LED），功率整流二极管，FET（例如，HFET），耿氏效应二极管和变容二极管等。

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