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1. 发明申请

WO2008110746A2 MEASURING APPARATUS 审中-公开
标题翻译：测量设备
公开(公告)号：WO2008110746A2
公开(公告)日：2008-09-18
申请号：PCT/GB2008/000734
申请日：2008-03-04
申请人： METRYX LIMITED , WILBY, Robert John , KIERMASZ, Adrian
发明人： WILBY, Robert John , KIERMASZ, Adrian
IPC分类号： H01L21/00
CPC分类号： H01L21/67253
摘要： Measuring apparatus and method for monitoring fabrication of a semiconductor wafer by exciting and measuring vibrations of the wafer substrate. A measurable parameter of vibration ( e.g. frequency) is indicative of mass of a vibrating region. Mass change caused by wafer treatment is reflected in changes in vibration measurements taken before and after that treatment. The apparatus includes a wafer support e.g. projecting ledge (19), a vibration exciting device e.g. contact probe (28) or pressure differential applicator, and a measurement device e.g. frequency sensor (62).
摘要翻译：通过激励和测量晶片衬底的振动来监测半导体晶片的制造的测量设备和方法。振动的可测量参数（例如频率）表示振动区域的质量。晶片处理导致的质量变化反映在该处理之前和之后进行的振动测量的变化中。该装置包括一个晶片支架例如突出的凸缘（19），一个振动激励装置，例如接触探头（28）或压差施加器，以及一个测量装置，例如（62）。

2. 发明申请

WO2012137013A1 MEASUREMENT APPARATUS AND METHOD 审中-公开
标题翻译：测量装置和方法
公开(公告)号：WO2012137013A1
公开(公告)日：2012-10-11
申请号：PCT/GB2012/050776
申请日：2012-04-05
申请人： METRYX LIMITED , KIERMASZ, Adrian
发明人： KIERMASZ, Adrian
IPC分类号： G01N5/02 , H01L21/66 , G01N5/04
CPC分类号： G01R31/2601 , C30B1/00 , C30B7/00 , C30B23/00 , G01N1/00 , G01N5/00 , G01N5/02 , G01N15/0893 , G01N2201/00 , G01N2203/00 , H01J49/26 , H01L22/12
摘要： A method and apparatus for extracting the contents (39) of voids (13) and/or pores present in a semiconductor device to obtain information indicative of the nature of the voids and/or pores, e.g. to assist with metrology measurements. The method includes heating the semiconductor wafer to expel the contents of the voids and/or pores, collecting the expelled material (41) in a collector, and measuring a consequential change in mass of the semiconductor wafer (29) and/or the collector (37), to extract information indicative of the nature of the voids. This information may include information relating to the distribution of the voids and/or pores, and/or the sizes of the voids and/or pores, and/or the chemical contents of the voids and/or pores. The collector may include a condenser having a temperature-controlled surface (e.g. in thermal communication with a refrigeration unit) for condensing the expelled material.
摘要翻译：一种用于提取存在于半导体器件中的空隙（13）和/或孔的内容物（39）的方法和装置，以获得指示空隙和/或孔的性质的信息，例如，协助测量测量。该方法包括加热半导体晶片以排出空隙和/或孔的内容物，将排出的材料（41）收集在收集器中，并测量半导体晶片（29）和/或集电体（29）的质量的相应变化 37），提取指示空洞性质的信息。该信息可以包括关于空隙和/或孔的分布，和/或空隙和/或孔的尺寸和/或空隙和/或孔的化学成分的信息。收集器可以包括具有用于冷凝排出的材料的温度控制表面（例如与制冷单元热连通）的冷凝器。

3. 发明申请

WO2009087383A1 METHOD OF CONTROLLING SEMICONDUCTOR DEVICE FABRICATION 审中-公开
标题翻译：控制半导体器件制造的方法
公开(公告)号：WO2009087383A1
公开(公告)日：2009-07-16
申请号：PCT/GB2009/000043
申请日：2009-01-07
申请人： METRYX LIMITED , KIERMASZ, Adrian
发明人： KIERMASZ, Adrian
IPC分类号： G05B23/02 , G05B15/02
CPC分类号： H01L22/12 , G05B15/02 , G05B23/024 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor wafer fabrication metrology method in which process steps are characterised by a change in wafer mass, whereby during fabrication mass is used as a measurable parameter to implement statistical process control on the one or more of process steps. In one aspect, the shape of a measured mass distribution is compared with the shape of a predetermined characteristic mass distribution to monitor the process. An determined empirical relationship between a control variable of the process and the characteristic mass change may enable differences between the measured mass distribution and characteristic mass distribution to provide information about the control variable. In another aspect, the relative position of an individual measured wafer mass change in a current distribution provides information about individual wafer problems independently from general process problems.
摘要翻译：一种半导体晶片制造计量方法，其中工艺步骤的特征在于晶片质量的变化，由此在制造期间将质量用作可测量的参数以对一个或多个工艺步骤实施统计过程控制。在一个方面，将测量的质量分布的形状与预定特征质量分布的形状进行比较以监测该过程。过程的控制变量与特征质量变化之间确定的经验关系可以使测量的质量分布和特征质量分布之间的差异能够提供关于控制变量的信息。另一方面，单个测量的晶片质量变化在电流分布中的相对位置提供了关于单个晶片问题的信息，而与一般工艺问题无关。

4. 发明申请

WO2006068971A2 METHODS AND APPARATUS FOR SEQUENTIALLY ALTERNATING AMONG PLASMA PROCESSES IN ORDER TO OPTIMIZE A SUBSTRATE 审中-公开
标题翻译：用于顺序替换等离子体处理以优化基板的方法和装置
公开(公告)号：WO2006068971A2
公开(公告)日：2006-06-29
申请号：PCT/US2005/045725
申请日：2005-12-16
申请人： LAM RESEARCH CORPORATION , KIERMASZ, Adrian , PANDHUMSOPORN, Tamarak , COFER, Alferd
发明人： KIERMASZ, Adrian , PANDHUMSOPORN, Tamarak , COFER, Alferd
IPC分类号： C23F1/00
CPC分类号： C03C23/006 , C23C4/02 , H01J37/32935 , H01L21/67253
摘要： In plasma processing system, a method for optimizing etching of a substrate is disclosed. The method includes selecting a first plasma process recipe including a first process variable, wherein changing the first process variable by a first amount optimizes a first substrate etch characteristic and aggravates a second substrate etch characteristic. The method also includes selecting second plasma process recipe including a second process variable, wherein changing the second process variable by a second amount aggravates the fist substrate etch characteristic and optimizes the second substrate etch characteristic. The method further includes positioning a substrate on a chuck in a plasma processing chamber; and striking a plasma within the plasma processing chamber. The method also includes alternating between the first plasma recipe and the second plasma recipe, wherein upon completion of the alternating, the first substrate etch characteristic and the second substrate etch characteristic are substantially optimized.
摘要翻译：在等离子体处理系统中，公开了一种用于优化衬底蚀刻的方法。该方法包括选择包括第一过程变量的第一等离子体处理配方，其中以第一量改变第一过程变量优化第一衬底蚀刻特性并加重第二衬底蚀刻特性。该方法还包括选择包括第二过程变量的第二等离子体处理配方，其中以第二量改变第二过程变量加剧了第一衬底蚀刻特性，并优化了第二衬底蚀刻特性。该方法还包括将基板定位在等离子体处理室中的卡盘上; 并在等离子体处理室内击打等离子体。该方法还包括在第一等离子体配方和第二等离子体配方之间交替，其中在完成交替时，基本上优化了第一衬底蚀刻特性和第二衬底蚀刻特性。

5. 发明申请

WO2015082874A1 SEMICONDUCTOR WAFER PROCESSING METHODS AND APPARATUS 审中-公开
标题翻译：半导体波长加工方法和装置
公开(公告)号：WO2015082874A1
公开(公告)日：2015-06-11
申请号：PCT/GB2014/053258
申请日：2014-11-03
申请人： METRYX LIMITED
发明人： WILBY, Robert, John , KIERMASZ, Adrian
IPC分类号： H01L21/67
CPC分类号： H01L22/26 , H01L21/67103 , H01L21/67109 , H01L21/67248 , H01L21/67706
摘要： A semiconductor wafer processing method comprising controlling the temperature of a semiconductor wafer to be within a predetermined processing temperature range by: causing a first temperature change of the semiconductor wafer using a first temperature changing unit; and subsequently causing a second temperature change using a second temperature changing unit; wherein the first change is greater than the second change; and subsequently loading the semiconductor wafer on a processing area of a semiconductor wafer processing apparatus. Also, a semiconductor wafer processing method comprising controlling the temperature of a semiconductor wafer to be within a predetermined processing temperature range by causing a temperature change of the semiconductor wafer using a temperature changing unit; transporting the semiconductor wafer from the temperature changing unit to a processing area of a semiconductor wafer processing apparatus; and controlling the temperature of the semiconductor wafer during the transporting step.
摘要翻译：一种半导体晶片处理方法，包括：通过使用第一温度改变单元使半导体晶片的第一温度变化，将半导体晶片的温度控制在预定的处理温度范围内; 并且随后使用第二温度改变单元引起第二温度变化; 其中所述第一变化大于所述第二变化; 并随后将半导体晶片装载在半导体晶片处理装置的处理区域上。此外，半导体晶片处理方法包括通过使用温度改变单元引起半导体晶片的温度变化来将半导体晶片的温度控制在预定的处理温度范围内; 将半导体晶片从温度改变单元传送到半导体晶片处理装置的处理区域; 以及在输送步骤期间控制半导体晶片的温度。

6. 发明申请

WO2015033108A1 METHOD AND DEVICE FOR DETERMINING INFORMATION RELATING TO THE MASS OF A SEMICONDUCTOR WAFER 审中-公开
标题翻译：用于确定与半导体滤波器的质量相关的信息的方法和装置
公开(公告)号：WO2015033108A1
公开(公告)日：2015-03-12
申请号：PCT/GB2014/052573
申请日：2014-08-21
申请人： METRYX LIMITED
发明人： WILBY, Robert John , KIERMASZ, Adrian
IPC分类号： G01G19/00
CPC分类号： G01G19/00 , B06B1/06 , B06B1/0648 , G01G3/16 , G01G17/02 , G01H11/08 , H01L21/67253
摘要： A method of determining information relating to the mass of a semiconductor wafer is disclosed. The method comprises loading the semiconductor wafer on to a measurement area of a weighing device having weight compensation means arranged to compensate for a predetermined weight loaded on to the measurement area; generating measurement output indicative of a difference between the weight of the semiconductor wafer and the predetermined weight; and using the measurement output to determine information relating to the mass of the semiconductor wafer. Also discloses is a corresponding weighing device for determining information relating to the mass of a semiconductor wafer.
摘要翻译：公开了一种确定与半导体晶片的质量有关的信息的方法。该方法包括将半导体晶片装载到称重装置的测量区域上，该称重装置具有重量补偿装置，其布置成补偿加载到测量区域上的预定重量; 产生指示半导体晶片的重量与预定重量之间的差异的测量输出; 并且使用测量输出来确定与半导体晶片的质量有关的信息。还公开了一种用于确定与半导体晶片的质量相关的信息的相应的称重装置。

7. 发明申请

WO2015150733A1 SEMICONDUCTOR WAFER WEIGHING APPARATUS AND METHODS 审中-公开
标题翻译：半导体波形称重装置及方法
公开(公告)号：WO2015150733A1
公开(公告)日：2015-10-08
申请号：PCT/GB2015/050851
申请日：2015-03-23
申请人： METRYX LIMITED
发明人： WILBY, Robert John , KIERMASZ, Adrian
IPC分类号： G01G17/00 , G01G23/10 , H01L21/67
CPC分类号： G01G23/10 , G01G17/00 , H01L21/67253 , H01L21/67288 , H01L22/12
摘要： A semiconductor wafer weighing apparatus comprises: a weight force measuring device for measuring a weight force of a semiconductor wafer; and control means configured to control an operation of the apparatus based on detection of acceleration of the apparatus or of a semiconductor wafer loaded on the apparatus by a detector for detecting acceleration of the apparatus or of a semiconductor wafer loaded on the apparatus; wherein: the control means is arranged to determine an error in the output of the weight force measuring device caused by an acceleration of the apparatus or of a semiconductor wafer loaded on the apparatus, using a predetermined relationship that matches the error in the output of the weight force measuring device to acceleration of the apparatus or of a semiconductor wafer loaded on the apparatus for different accelerations of the apparatus or of a semiconductor wafer loaded on the apparatus.
摘要翻译：半导体晶片称重装置包括：用于测量半导体晶片的重量的重量测量装置; 以及控制装置，被配置为基于检测装置或加载在装置上的半导体晶片的加速度来控制装置的操作，所述检测器用于检测装置或装载在装置上的半导体晶片的加速度; 其特征在于，所述控制装置被配置为使用与所述装置的加速度相对应的预定关系来确定由所述装置或所述装置上装载的半导体晶片的加速度引起的所述重力测量装置的输出中的误差，重量测量装置，用于加速设备或装载在设备上的半导体晶片，用于装置或装载在装置上的半导体晶片的不同加速度。

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