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1. 发明申请

WO2006068971A2 METHODS AND APPARATUS FOR SEQUENTIALLY ALTERNATING AMONG PLASMA PROCESSES IN ORDER TO OPTIMIZE A SUBSTRATE 审中-公开
标题翻译：用于顺序替换等离子体处理以优化基板的方法和装置
公开(公告)号：WO2006068971A2
公开(公告)日：2006-06-29
申请号：PCT/US2005/045725
申请日：2005-12-16
申请人： LAM RESEARCH CORPORATION , KIERMASZ, Adrian , PANDHUMSOPORN, Tamarak , COFER, Alferd
发明人： KIERMASZ, Adrian , PANDHUMSOPORN, Tamarak , COFER, Alferd
IPC分类号： C23F1/00
CPC分类号： C03C23/006 , C23C4/02 , H01J37/32935 , H01L21/67253
摘要： In plasma processing system, a method for optimizing etching of a substrate is disclosed. The method includes selecting a first plasma process recipe including a first process variable, wherein changing the first process variable by a first amount optimizes a first substrate etch characteristic and aggravates a second substrate etch characteristic. The method also includes selecting second plasma process recipe including a second process variable, wherein changing the second process variable by a second amount aggravates the fist substrate etch characteristic and optimizes the second substrate etch characteristic. The method further includes positioning a substrate on a chuck in a plasma processing chamber; and striking a plasma within the plasma processing chamber. The method also includes alternating between the first plasma recipe and the second plasma recipe, wherein upon completion of the alternating, the first substrate etch characteristic and the second substrate etch characteristic are substantially optimized.
摘要翻译：在等离子体处理系统中，公开了一种用于优化衬底蚀刻的方法。该方法包括选择包括第一过程变量的第一等离子体处理配方，其中以第一量改变第一过程变量优化第一衬底蚀刻特性并加重第二衬底蚀刻特性。该方法还包括选择包括第二过程变量的第二等离子体处理配方，其中以第二量改变第二过程变量加剧了第一衬底蚀刻特性，并优化了第二衬底蚀刻特性。该方法还包括将基板定位在等离子体处理室中的卡盘上; 并在等离子体处理室内击打等离子体。该方法还包括在第一等离子体配方和第二等离子体配方之间交替，其中在完成交替时，基本上优化了第一衬底蚀刻特性和第二衬底蚀刻特性。

2. 发明申请

WO2012137013A1 MEASUREMENT APPARATUS AND METHOD 审中-公开
标题翻译：测量装置和方法
公开(公告)号：WO2012137013A1
公开(公告)日：2012-10-11
申请号：PCT/GB2012/050776
申请日：2012-04-05
申请人： METRYX LIMITED , KIERMASZ, Adrian
发明人： KIERMASZ, Adrian
IPC分类号： G01N5/02 , H01L21/66 , G01N5/04
CPC分类号： G01R31/2601 , C30B1/00 , C30B7/00 , C30B23/00 , G01N1/00 , G01N5/00 , G01N5/02 , G01N15/0893 , G01N2201/00 , G01N2203/00 , H01J49/26 , H01L22/12
摘要： A method and apparatus for extracting the contents (39) of voids (13) and/or pores present in a semiconductor device to obtain information indicative of the nature of the voids and/or pores, e.g. to assist with metrology measurements. The method includes heating the semiconductor wafer to expel the contents of the voids and/or pores, collecting the expelled material (41) in a collector, and measuring a consequential change in mass of the semiconductor wafer (29) and/or the collector (37), to extract information indicative of the nature of the voids. This information may include information relating to the distribution of the voids and/or pores, and/or the sizes of the voids and/or pores, and/or the chemical contents of the voids and/or pores. The collector may include a condenser having a temperature-controlled surface (e.g. in thermal communication with a refrigeration unit) for condensing the expelled material.
摘要翻译：一种用于提取存在于半导体器件中的空隙（13）和/或孔的内容物（39）的方法和装置，以获得指示空隙和/或孔的性质的信息，例如，协助测量测量。该方法包括加热半导体晶片以排出空隙和/或孔的内容物，将排出的材料（41）收集在收集器中，并测量半导体晶片（29）和/或集电体（29）的质量的相应变化 37），提取指示空洞性质的信息。该信息可以包括关于空隙和/或孔的分布，和/或空隙和/或孔的尺寸和/或空隙和/或孔的化学成分的信息。收集器可以包括具有用于冷凝排出的材料的温度控制表面（例如与制冷单元热连通）的冷凝器。

3. 发明申请

WO2009087383A1 METHOD OF CONTROLLING SEMICONDUCTOR DEVICE FABRICATION 审中-公开
标题翻译：控制半导体器件制造的方法
公开(公告)号：WO2009087383A1
公开(公告)日：2009-07-16
申请号：PCT/GB2009/000043
申请日：2009-01-07
申请人： METRYX LIMITED , KIERMASZ, Adrian
发明人： KIERMASZ, Adrian
IPC分类号： G05B23/02 , G05B15/02
CPC分类号： H01L22/12 , G05B15/02 , G05B23/024 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor wafer fabrication metrology method in which process steps are characterised by a change in wafer mass, whereby during fabrication mass is used as a measurable parameter to implement statistical process control on the one or more of process steps. In one aspect, the shape of a measured mass distribution is compared with the shape of a predetermined characteristic mass distribution to monitor the process. An determined empirical relationship between a control variable of the process and the characteristic mass change may enable differences between the measured mass distribution and characteristic mass distribution to provide information about the control variable. In another aspect, the relative position of an individual measured wafer mass change in a current distribution provides information about individual wafer problems independently from general process problems.
摘要翻译：一种半导体晶片制造计量方法，其中工艺步骤的特征在于晶片质量的变化，由此在制造期间将质量用作可测量的参数以对一个或多个工艺步骤实施统计过程控制。在一个方面，将测量的质量分布的形状与预定特征质量分布的形状进行比较以监测该过程。过程的控制变量与特征质量变化之间确定的经验关系可以使测量的质量分布和特征质量分布之间的差异能够提供关于控制变量的信息。另一方面，单个测量的晶片质量变化在电流分布中的相对位置提供了关于单个晶片问题的信息，而与一般工艺问题无关。

4. 发明申请

WO2008110746A2 MEASURING APPARATUS 审中-公开
标题翻译：测量设备
公开(公告)号：WO2008110746A2
公开(公告)日：2008-09-18
申请号：PCT/GB2008/000734
申请日：2008-03-04
申请人： METRYX LIMITED , WILBY, Robert John , KIERMASZ, Adrian
发明人： WILBY, Robert John , KIERMASZ, Adrian
IPC分类号： H01L21/00
CPC分类号： H01L21/67253
摘要： Measuring apparatus and method for monitoring fabrication of a semiconductor wafer by exciting and measuring vibrations of the wafer substrate. A measurable parameter of vibration ( e.g. frequency) is indicative of mass of a vibrating region. Mass change caused by wafer treatment is reflected in changes in vibration measurements taken before and after that treatment. The apparatus includes a wafer support e.g. projecting ledge (19), a vibration exciting device e.g. contact probe (28) or pressure differential applicator, and a measurement device e.g. frequency sensor (62).
摘要翻译：通过激励和测量晶片衬底的振动来监测半导体晶片的制造的测量设备和方法。振动的可测量参数（例如频率）表示振动区域的质量。晶片处理导致的质量变化反映在该处理之前和之后进行的振动测量的变化中。该装置包括一个晶片支架例如突出的凸缘（19），一个振动激励装置，例如接触探头（28）或压差施加器，以及一个测量装置，例如（62）。

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