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1. 发明申请

WO1996027689A1 METHOD AND APPARATUS FOR COOLING A SPUTTERING TARGET 审中-公开
标题翻译：用于冷却喷射目标的方法和装置
公开(公告)号：WO1996027689A1
公开(公告)日：1996-09-12
申请号：PCT/US1995014766
申请日：1995-11-14
申请人： MATERIALS RESEARCH CORPORATION
发明人： MATERIALS RESEARCH CORPORATION , HURWITT, Steven
IPC分类号： C23C14/34
CPC分类号： C23C14/3407
摘要： Method and apparatus for cooling a sputtering target is provided. The method comprises the steps of providing a sputtering target (115) and a cooling surface (116) in operable conductive heat transfer contact with the sputtering target, introducing a cooling liquid (117) onto the cooling surface (116) to conductively remove heat from the sputtering target (115), allowing at least a portion of the cooling liquid (117) to change phase into a vapor, and preventing a continuous insulating vapor layer from forming on the cooling surface (116) to ensure continuing conductive heat transfer from the target (115) to the cooling surface (116) so as to avoid overheating of the target (115). The apparatus comprises a cooling surface (116) in operable conductive heat transfer contact with the sputtering target (115) to conductively remove heat from the target (115) when a cooling liquid (117) is introduced onto the cooling surface (116), and means (125, 132, 140) for allowing at least a portion of the cooling liquid (117) to change phase into a vapor while preventing a continuous insulating vapor layer from forming on the cooling surface (116) to ensure continuing conductive heat transfer from the target (115) to the cooling surface (116) so as to avoid overheating of the target (115).
摘要翻译：提供了用于冷却溅射靶的方法和装置。该方法包括以下步骤：将溅射靶（115）和冷却表面（116）与溅射靶进行可操作的导电传热接触，将冷却液（117）引入到冷却表面（116）上以导电地从所述溅射靶（115）允许所述冷却液（117）的至少一部分将相变成蒸气，并且防止在所述冷却表面（116）上形成连续的绝缘蒸气层，以确保从所述冷却表面目标（115）到冷却表面（116），以避免目标（115）的过热。该装置包括与冷却液体（117）引入到冷却表面（116）上时，与溅射靶（115）可操作地导电传热接触以冷却表面（116）以导热地从目标物（115）去除热量;以及用于允许冷却液体（117）的至少一部分将相变成蒸气的装置（125,132,140），同时防止在冷却表面（116）上形成连续的绝缘蒸汽层，以确保从目标（115）到冷却表面（116），以避免目标（115）的过热。

2. 发明申请

WO1995026566A1 SPUTTERING TARGET EROSION PROFILE CONTROL FOR COLLIMATED DEPOSITION 审中-公开
标题翻译：溅射目标腐蚀剖面控制
公开(公告)号：WO1995026566A1
公开(公告)日：1995-10-05
申请号：PCT/US1994013759
申请日：1994-11-28
申请人： MATERIALS RESEARCH CORPORATION
发明人： MATERIALS RESEARCH CORPORATION , HURWITT, Steven , WAGNER, Israel
IPC分类号： H01J37/34
CPC分类号： H01J37/3447 , H01J37/3408 , H01J37/3473
摘要： A sputtering cathode assembly provides particularly uniform coatings. The assembly includes a sputtering target (10) and a collimator (20) positioned to lie between the target and a wafer (15) to be coated. A magnet assembly, preferably rotating, shapes the plasma to produce an erosion profile (12) that forms an erosion groove (18) around the periphery of the target (10) and a shallower erosion area interior of the groove (18) and at least about half as deep, and preferably between 0.6 and 0.75 as deep as the groove. The assembly enhances uniformity where collimator aspect ratios exceed approximately 0.5, and particularly where aspect ratios are from 1.0 to over to 2.0, and may vary over the life of the collimator and targets used therewith.
摘要翻译：溅射阴极组件提供特别均匀的涂层。组件包括溅射靶（10）和准直器（20），该准直器定位成位于靶和待涂覆的晶片（15）之间。优选旋转的磁体组件使等离子体成形以产生侵蚀曲线（12），所述侵蚀曲线形成围绕靶（10）的周边的侵蚀槽（18）和凹槽（18）内部较浅的侵蚀区域，并且至少大约一半深，优选地在0.6至0.75之间，与凹槽一样深。当准直器长宽比超过约0.5时，并且特别是当纵横比为1.0至超过2.0时，该组件增强了均匀性，并且可以在与其一起使用的准直器和靶的寿命期间变化。

3. 发明申请

WO1996025533A1 HIGH UTILIZATION SPUTTERING TARGET 审中-公开
标题翻译：高利用溅射目标
公开(公告)号：WO1996025533A1
公开(公告)日：1996-08-22
申请号：PCT/US1995014750
申请日：1995-11-14
申请人： MATERIALS RESEARCH CORPORATION
发明人： MATERIALS RESEARCH CORPORATION , HURWITT, Steven
IPC分类号： C23C14/34
CPC分类号： H01J37/3435 , C23C14/3407 , H01J37/3423
摘要： A sputtering target (40) comprises a disc (42) machined from a first piece of target grade material, having a front sputtering face (44) and a rear face (46) opposite. The sputtering face and target material erode during use to define a final sputtered face contour (48) and a residual target thickness (t) measured from the rear face. A hub (50) is machined from a second piece of material and is secured to the rear face of the disc. The securement device (54) utilizes a depth of target material measured from the rear face which minimizes the thickness (t) in a region adjacent the hub so as to maximize the amount of the target grade material sputterable in the region before encountering the securement device.
摘要翻译：溅射靶（40）包括从第一目标级材料加工的盘（42），具有相对的前溅射面（44）和后表面（46）。在使用期间，溅射面和目标材料侵蚀以限定从后面测量的最终溅射面轮廓（48）和残留目标厚度（t）。轮毂（50）由第二块材料加工而成，并固定到盘的后表面。固定装置（54）利用从背面测量的目标材料的深度，其最小化与轮毂相邻的区域中的厚度（t），以便在遇到固定装置之前使在该区域中可溅射的靶材料的量最大化。

4. 发明申请

WO1997035044A1 METHOD AND APPARATUS FOR RF DIODE SPUTTERING 审中-公开
标题翻译：射频二极管溅射的方法和装置
公开(公告)号：WO1997035044A1
公开(公告)日：1997-09-25
申请号：PCT/US1997003047
申请日：1997-03-04
申请人： MATERIALS RESEARCH CORPORATION
发明人： MATERIALS RESEARCH CORPORATION , HURWITT, Steven
IPC分类号： C23C14/40
CPC分类号： H01J37/3447 , C23C14/34 , H01J37/34
摘要： A sputtering system (50) includes an evacuatable chamber (52) having a target (58) which includes a sputtering surface (60). The target (58) is biased to form a cathode element (70) which causes the emission of electrons. The system (50) further includes an anode element (74) which includes the substrate (62). In use, a sputtering gas is ionized in response to the electrons to form a plasma. The plasma includes a cathode dark space (24) having a first thickness (T) wherein ionization does not occur. A plate element (76) having a bottom surface (80) is positioned a first distance (D) from the sputtering surface (60). Electrons emitted from the target (58) are absorbed by the plate element (76) to inhibit plasma formation in a first area (82) adjacent the bottom surface (60) such that target material (58) is not eroded opposite the first area (82). Further, plasma is formed in a second area (94) adjacent an edge (84, 86, 90, 92) to cause target material (58) to be eroded from the second area (94).
摘要翻译：溅射系统（50）包括具有包括溅射表面（60）的靶（58）的可抽空腔（52）。靶（58）被偏压以形成导致电子发射的阴极元件（70）。系统（50）还包括包括基板（62）的阳极元件（74）。在使用中，溅射气体响应于电子被电离以形成等离子体。等离子体包括具有不会发生电离的第一厚度（T）的阴极暗空间（24）。具有底表面（80）的板元件（76）与溅射表面（60）定位成第一距离（D）。从靶元件（58）发射的电子被平板元件（76）吸收，以抑制邻近底面（60）的第一区域（82）中的等离子体形成，使得靶材料（58）不与第一区域相对 82）。此外，等离子体形成在与边缘（84,86,90,92）相邻的第二区域（94）中，以引起目标材料（58）从第二区域（94）侵蚀。

5. 发明申请

WO1996017971A1 SPUTTERING APPARATUS HAVING AN ON BOARD SERVICE MODULE 审中-公开
标题翻译：具有车载服务模块的飞溅装置
公开(公告)号：WO1996017971A1
公开(公告)日：1996-06-13
申请号：PCT/US1995014436
申请日：1995-11-09
申请人： MATERIALS RESEARCH CORPORATION
发明人： MATERIALS RESEARCH CORPORATION , HURWITT, Steven
IPC分类号： C23C14/56
CPC分类号： C23C14/564
摘要： A system (50) for sputtering a substrate (42) is disclosed. The system includes a central housing (12) having at least one process module (20, 22, 24) for forming the layer, wherein the process module is in fluid communication with the central housing (12) and includes a first device used in conjunction with forming the layer on the substrate (42). In addition, the system (50) includes at least one service module (52) in fluid communication with the central housing (12), wherein the service module (52) includes at least one replacement device suitable for replacing the first device. The central housing (12) includes a robotic element (40) for transporting the first device from the process module (20, 22, 24) to the service module (52) and for transporting the replacement device from the service module (52) to the process module (20, 22, 24) in order to replace the first device. In addition, the service module (52) includes a dedicated pump (60) for evacuating the service module (52) to a high vacuum in order to reduce surface outgassing of the replacement device to a desired level before use.
摘要翻译：公开了一种用于溅射衬底（42）的系统（50）。该系统包括具有用于形成该层的至少一个处理模块（20,22,24）的中央壳体（12），其中该处理模块与该中心壳体（12）流体连通并且包括结合使用的第一装置在衬底（42）上形成该层。此外，系统（50）包括与中央壳体（12）流体连通的至少一个服务模块（52），其中服务模块（52）包括适于替换第一设备的至少一个替换设备。中央壳体（12）包括用于将第一装置从处理模块（20,22,24）运送到维修模块（52）并将替换装置从维修模块（52）运送到所述处理模块（20,22,24）以便更换所述第一设备。此外，服务模块（52）包括用于将服务模块（52）抽空到高真空的专用泵（60），以便在使用之前将替换装置的表面去气化减少到期望的水平。

6. 发明申请

WO1992021143A1 SEMICONDUCTOR WAFER PROCESSING MODULE 审中-公开
标题翻译：半导体波长加工模块
公开(公告)号：WO1992021143A1
公开(公告)日：1992-11-26
申请号：PCT/US1992000483
申请日：1992-01-21
申请人： MATERIALS RESEARCH CORPORATION
发明人： MATERIALS RESEARCH CORPORATION , HODOS, Julian , HURWITT, Steven
IPC分类号： H01L21/00
CPC分类号： H01L21/67748 , C23C14/505 , C23C14/568 , H01L21/67751 , H01L21/68707 , H01L21/68764 , H01L21/68771 , H01L21/68785 , Y10T29/41
摘要： A sputtering module incorporated into a wafer processing system (10) includes an evacuatable housing (26) connectable to one or more other evacuatable housings and a wafer handling turret (32) adapted to receive a wafer (34) in horizontal orientation at a load/unload position (38) and rotate the wafer (34) 180° about an inclined axis (46) into vertical orientation at a sputtering position (48) across from a sputtering target (52). After sputter coating, the wafer handling turret (32) again rotates 180° about the inclined axis (46) to rotatably return the wafer (34) to the horizontal load/unload position (38), whereupon the wafer (34) is lowered to a horizontal receiving position for subsequent retrieval by an arm (21) extendible into the module from an adjacently situated housing (20). The wafer handling turret (32) includes three wafer rings (85) and a disc-shaped shutter (44) that is rotatably located in front of the target (52) during precleaning.

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