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1. 发明申请

WO2012093808A2 내지문 코팅 방법 및 장치 审中-公开
标题翻译：用于指纹抗蚀涂层的方法和装置
公开(公告)号：WO2012093808A2
公开(公告)日：2012-07-12
申请号：PCT/KR2011/010297
申请日：2011-12-29
申请人： 바코스 주식회사 , 김윤택
发明人： 김윤택
IPC分类号： C23C14/24 , C23C14/40 , C23C14/02
CPC分类号： C23C16/401 , C23C14/12 , C23C14/26 , C23C16/509
摘要： 본 발명은 기존의 전자빔증착법 대신에 AC 플라즈마 개질법 및 열증착법을 복합적으로 사용하여 생산성을 향상시킨 내지문 표면 코팅 방법 및 장치에 관한 것으로서, 상세하게는 본 발명은 a) AC 플라즈마법을 이용하여 SiOx(x는 1.5-2.0) 박막을 증착하는 단계, 및 b) 상기 SiOx 박막이 증착된 기재 표면에 열증착(Thermal evaporation)을 통해 불소화합물을 증착시키는 단계를 포함하는 내지문 코팅 방법에 대한 것이다.
摘要翻译：本发明涉及一种通过使用AC等离子体改性法和热蒸发法代替传统的电子束蒸发法而具有提高的生产率的耐指纹涂层的方法和装置，更具体地说，本发明涉及耐指纹涂覆方法，包括：a）使用AC等离子体法蒸发SiOx（x为1.5-2.0）薄膜的步骤; 和b）通过热蒸发蒸发在其上蒸发有SiO x薄膜的碱性材料的表面上的氟化合物的步骤。

2. 发明申请

WO87007651A1 SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开
标题翻译：半导体制造设备
公开(公告)号：WO87007651A1
公开(公告)日：1987-12-17
申请号：PCT/JP1987000357
申请日：1987-12-17
IPC分类号： H01L21/285 , C23C14/34 , C23C14/35 , C23C14/40 , H01J37/34 , H01L21/203 , H01L21/31
CPC分类号： C23C14/345 , C23C14/34 , C23C14/35 , H01J37/32706 , H01J37/3405
摘要： A bias-sputtering apparatus is characterized by having a radio-frequency power source and an exhaust unit and impressing a DC bias to at least either one of both electrodes of the susceptor and the target. That is, the invention is a semiconductor manufacturing apparatus for depositing a thin film on the surface of a semiconductor substrate, which is characterized by having a radio-frequency power source and an exhaust unit and impressing a desired DC bias to at least either the susceptor which holds the semiconductor substrate in the apparatus or the target which is constituted by a thin-film material.
摘要翻译：偏压溅射装置的特征在于具有射频电源和排气单元，并且将基准电极和靶的两个电极中的至少任一个施加DC偏压。也就是说，本发明是一种用于在半导体衬底的表面上沉积薄膜的半导体制造装置，其特征在于具有射频电源和排气单元，并且将至少一个感应器施加期望的DC偏压其将半导体衬底保持在由薄膜材料构成的装置或靶中。

3. 发明申请

WO2019004185A1 プラズマ処理装置审中-公开
公开(公告)号：WO2019004185A1
公开(公告)日：2019-01-03
申请号：PCT/JP2018/024147
申请日：2018-06-26
申请人：キヤノンアネルバ株式会社
发明人：田名部　正治 , 関谷　一成 , 井上　忠 , 笹本　浩 , 佐藤　辰憲 , 土屋　信昭 , 竹田　敦
IPC分类号： H05H1/46 , B01J19/08 , C23C14/34 , C23C14/40 , H01L21/203 , H01L21/3065
摘要：プラズマ処理装置は、第１不平衡端子、第２不平衡端子、第１平衡端子および第２平衡端子を有するバランと、接地された真空容器と、前記第１平衡端子に電気的に接続された第１電極と、前記第２平衡端子に電気的に接続された第２電極と、前記第１電極に印加される第１電圧と前記第２電極に印加される第２電圧との関係に影響を与える調整リアクタンスと、基板を保持する基板保持部と、前記基板保持部を回転させる駆動機構と、を備える。

4. 发明申请

WO2012036936A2 METHODS FOR DEPOSITING METAL IN HIGH ASPECT RATIO FEATURES 审中-公开
标题翻译：高纵横比金属的沉积方法
公开(公告)号：WO2012036936A2
公开(公告)日：2012-03-22
申请号：PCT/US2011/050507
申请日：2011-09-06
申请人： APPLIED MATERIALS, INC. , BROWN, Karl , RITCHIE, Alan , PIPITONE, John , RUI, Ying , HOFFMAN, Daniel J.
发明人： BROWN, Karl , RITCHIE, Alan , PIPITONE, John , RUI, Ying , HOFFMAN, Daniel J.
IPC分类号： C23C14/40 , C23C14/02 , C23C14/58
CPC分类号： C23C14/046 , C23C14/185 , C23C14/3492
摘要： Methods of depositing metal in high aspect ratio features are provided herein. In some embodiments, a method of processing a substrate includes applying RF power at VHF frequency to a target comprising metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas, sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms, depositing the ionized metal atoms on a bottom surface of the opening and on a first surface of the substrate, applying a first RF power to redistribute at least some of the deposited metal atoms from the bottom surface and upper surface to sidewalls of the opening, and repeating the deposition the redistribution processes until a first layer of metal is deposited on substantially all surfaces of the opening.
摘要翻译：本文提供了在高纵横比特征中沉积金属的方法。在一些实施例中，处理衬底的方法包括以VHF频率将RF功率施加到包含设置在衬底上方的PVD室中的金属的目标以由等离子体形成气体形成等离子体，使用等离子体从目标溅射金属原子同时保持PVD室中的第一压力足以使溅射的金属原子的主要部分电离，将离子化的金属原子沉积在开口的底表面上和衬底的第一表面上，施加第一RF功率以在至少一些沉积的金属原子从底面和上表面到开口的侧壁，并且重复沉积再分布过程，直到在开口的基本上所有表面上沉积第一层金属为止。

5. 发明申请

WO2010132591A2 PECVD COATING USING AN ORGANOSILICON PRECURSOR 审中-公开
标题翻译： PECVD涂料使用有机硅前体
公开(公告)号：WO2010132591A2
公开(公告)日：2010-11-18
申请号：PCT/US2010034586
申请日：2010-05-12
申请人： CV HOLDINGS LLC , FELTS JOHN T , FISK THOMAS E , ABRAMS ROBERT S , PANGBORN ROBERT J , SAGONA PETER J
发明人： FELTS JOHN T , FISK THOMAS E , ABRAMS ROBERT S , PANGBORN ROBERT J , SAGONA PETER J
IPC分类号： C23C16/30 , C23C14/40 , C23C16/24 , C23C16/50 , H01L21/205
CPC分类号： C23C16/54 , A61M5/3129 , A61M2005/3131 , C23C16/045 , C23C16/503 , C23C16/52 , G01M3/26 , G01N21/9072 , G01N21/9081
摘要： A method for coating a substrate surface by PECVD is provided, the method comprising generating a plasma from a gaseous reactant comprising an organosilicon precursor and optionally O2. The lubricity, hydrophobicity and/or barrier properties of the coating are set by setting the ratio of the O2 to the organosilicon precursor in the gaseous reactant, and/or by setting the electric power used for generating the plasma. In particular, a lubricity coating made by said method is provided. Vessels coated by said method and the use of such vessels protecting a compound or composition contained or received in said coated vessel against mechanical and/or chemical effects of the surface of the uncoated vessel material are also provided.
摘要翻译：提供了一种通过PECVD涂覆基底表面的方法，该方法包括从包含有机硅前体和任选的O 2的气态反应物产生等离子体。通过设定气体反应物中的O 2与有机硅前体的比例和/或通过设定用于产生等离子体的电力来设定涂层的润滑性，疏水性和/或阻隔性。特别地，提供了由所述方法制成的润滑性涂层。还提供了通过所述方法涂覆的容器以及保护包含或接收在所述涂覆的容器中的化合物或组合物的这种容器的抗体对未涂覆的容器材料的表面的机械和/或化学作用。

6. 发明申请

WO01012863A1 STEEL SHEET FOR HEAT SHRINK BAND AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：热收缩带用钢板及其制造方法
公开(公告)号：WO01012863A1
公开(公告)日：2001-02-22
申请号：PCT/JP2000/005206
申请日：2000-08-03
IPC分类号： C23C14/40 , C21D8/02 , C21D8/12 , C21D9/46 , C22C38/00 , C22C38/04 , C22C38/12 , C22C38/14 , H01F1/16 , H01J29/87 , H01J37/32 , H01J37/34 , H01J29/07
CPC分类号： C21D8/1233 , C21D8/0236 , C21D8/1272 , C21D9/46 , C22C38/004 , C22C38/04 , H01F1/16 , H01J29/87 , H01J2229/87
摘要： A steel sheet for a heat shrink band having a non-hysterisis magnetic permeability in a magnetic field of 0.35 Oe of 15000 or more and a yield stress of 24 kgf/mm or greater. The steel sheet for a heat shrink band can be produced by a method comprising a step of subjecting a steel containing C in an amount of 0.01 to 0.15 wt % to a hot or cold rolling, a step of annealing the rolled product at 650 to 900 DEG C, and subjecting the annealed product to temper rolling at a draft of 1.5 % or less. The steel sheet for a heat shrink band can be used for producing a cathode-ray tube which is almost free from the occurrence of color slippage and does not suffer the deformation of its panel face.
摘要翻译：在0.35Oe的磁场为15000以上，屈服应力为24kgf / mm 2以上的具有非滞后磁导率的热收缩带钢板。用于热收缩带的钢板可以通过包括以下步骤的方法制造：将含有0.01-0.15重量％的C的钢进行热轧或冷轧，将轧制产品在650℃退火至900℃的步骤并使退火后的产品在1.5％以下的牵伸下进行回火轧制。用于热收缩带的钢板可以用于制造几乎没有发生彩色滑动的阴极射线管，并且不会受到其面板的变形。

7. 发明申请

WO9852207A3 CENTRAL COIL DESIGN FOR IONIZED METAL PLASMA DEPOSITION 审中-公开
标题翻译：用于离子化金属等离子体沉积的中心线圈设计
公开(公告)号：WO9852207A3
公开(公告)日：1999-02-11
申请号：PCT/US9810058
申请日：1998-05-13
申请人： APPLIED MATERIALS INC
发明人： HONG LIUBO , WANG HOUGONG , YAO GONGDA , XU ZHENG
IPC分类号： H05H1/46 , C23C14/34 , C23C14/40 , H01J37/32 , H01J37/34 , H01L21/203 , H01L21/285 , H01J37/00
CPC分类号： H01J37/321 , H01J37/34 , H01J2237/3323
摘要： In a plasma generating apparatus, a coil is positioned between a target and a workpiece to inductively couple RF energy into a plasma so that the paths of a portion of the ionized deposition material are deflected from the center of the workpiece and toward the edges of the workpiece. As a consequence, it has been found that the uniformity of deposition may be improved. In the illustrated embodiment, the coil is a multi-turn coil formed in a generally planar spiral centered in the stream of deposition material.

8. 发明申请

WO98052207A2 CENTRAL COIL DESIGN FOR IONIZED METAL PLASMA DEPOSITION 审中-公开
标题翻译：用于离子化金属等离子体沉积的中心线圈设计
公开(公告)号：WO98052207A2
公开(公告)日：1998-11-19
申请号：PCT/US1998/010058
申请日：1998-05-13
IPC分类号： H05H1/46 , C23C14/34 , C23C14/40 , H01J37/32 , H01J37/34 , H01L21/203 , H01L21/285 , H01J37/00
CPC分类号： H01J37/321 , H01J37/34 , H01J2237/3323
摘要： In a plasma generating apparatus, a coil is positioned between a target and a workpiece to inductively couple RF energy into a plasma so that the paths of a portion of the ionized deposition material are deflected from the center of the workpiece and toward the edges of the workpiece. As a consequence, it has been found that the uniformity of deposition may be improved. In the illustrated embodiment, the coil is a multi-turn coil formed in a generally planar spiral centered in the stream of deposition material.
摘要翻译：在等离子体发生装置中，线圈位于目标和工件之间以将RF能量感应耦合到等离子体中，使得电离沉积材料的一部分的路径从工件的中心偏转并且朝向工件的边缘工件。因此，已经发现可以提高沉积的均匀性。在所示实施例中，线圈是形成在沉积材料流中心的大致平面螺旋形的多匝线圈。

9. 发明申请

WO1997035044A1 METHOD AND APPARATUS FOR RF DIODE SPUTTERING 审中-公开
标题翻译：射频二极管溅射的方法和装置
公开(公告)号：WO1997035044A1
公开(公告)日：1997-09-25
申请号：PCT/US1997003047
申请日：1997-03-04
申请人： MATERIALS RESEARCH CORPORATION
发明人： MATERIALS RESEARCH CORPORATION , HURWITT, Steven
IPC分类号： C23C14/40
CPC分类号： H01J37/3447 , C23C14/34 , H01J37/34
摘要： A sputtering system (50) includes an evacuatable chamber (52) having a target (58) which includes a sputtering surface (60). The target (58) is biased to form a cathode element (70) which causes the emission of electrons. The system (50) further includes an anode element (74) which includes the substrate (62). In use, a sputtering gas is ionized in response to the electrons to form a plasma. The plasma includes a cathode dark space (24) having a first thickness (T) wherein ionization does not occur. A plate element (76) having a bottom surface (80) is positioned a first distance (D) from the sputtering surface (60). Electrons emitted from the target (58) are absorbed by the plate element (76) to inhibit plasma formation in a first area (82) adjacent the bottom surface (60) such that target material (58) is not eroded opposite the first area (82). Further, plasma is formed in a second area (94) adjacent an edge (84, 86, 90, 92) to cause target material (58) to be eroded from the second area (94).
摘要翻译：溅射系统（50）包括具有包括溅射表面（60）的靶（58）的可抽空腔（52）。靶（58）被偏压以形成导致电子发射的阴极元件（70）。系统（50）还包括包括基板（62）的阳极元件（74）。在使用中，溅射气体响应于电子被电离以形成等离子体。等离子体包括具有不会发生电离的第一厚度（T）的阴极暗空间（24）。具有底表面（80）的板元件（76）与溅射表面（60）定位成第一距离（D）。从靶元件（58）发射的电子被平板元件（76）吸收，以抑制邻近底面（60）的第一区域（82）中的等离子体形成，使得靶材料（58）不与第一区域相对 82）。此外，等离子体形成在与边缘（84,86,90,92）相邻的第二区域（94）中，以引起目标材料（58）从第二区域（94）侵蚀。

10. 发明申请

WO2019172252A1 プラズマ処理装置审中-公开
公开(公告)号：WO2019172252A1
公开(公告)日：2019-09-12
申请号：PCT/JP2019/008626
申请日：2019-03-05
申请人：日新電機株式会社
发明人：酒井　敏彦 , 安東　靖典 , 久保田　清
IPC分类号： H05H1/46 , C23C14/40 , C23C16/509 , H01L21/205 , H01L21/3065 , H01L21/31
摘要：長尺状のアンテナを用いて基板の大型化に対応することができるようにしつつ、アンテナの長手方向に沿って均一なプラズマを発生させる。アンテナ３の給電側端部３ａに流れる電流又は当該給電側端部３ａに印加される電圧を検出する第１検出部Ｓ１と、アンテナ３の給電側端部３ａとは反対側の接地側端部３ｂに流れる電流又は当該接地側端部３ｂに印加される電圧を検出する第２検出部Ｓ２とを具備するようにした。

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