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1. 发明申请

WO2014163729A3 ACOUSTIC BANDGAP STRUCTURES FOR INTEGRATION OF MEMS RESONATORS 审中-公开
标题翻译：用于MEMS谐振器集成的声带结构
公开(公告)号：WO2014163729A3
公开(公告)日：2014-12-11
申请号：PCT/US2014012108
申请日：2014-01-17
申请人： MARATHE RADHIKA , BAHR BICHOY W , WANG WENTAO , WEINSTEIN DANA
发明人： MARATHE RADHIKA , BAHR BICHOY W , WANG WENTAO , WEINSTEIN DANA
IPC分类号： B81B3/00 , B81C1/00 , H03H3/007
CPC分类号： H04R1/00 , H03H9/02566 , H04R31/00 , H04R2201/003
摘要： Example acoustic bandgap devices provided that can be fabricated in a semiconductor fabrication tool based on design check rules. An example device includes a substrate lying in an x-y plane and defining an x-direction and a y-direction, an acoustic resonant cavity over the substrate, and a phononic crystal disposed over the acoustic resonant cavity by generating the phononic crystal as a plurality of unit cells disposed in a periodic arrangement. Each unit cell include: (a) at least one higher acoustic impedance structure having a longitudinal axis oriented in the y-direction and a thickness in the x-direction greater than or about equal to a minimal feature thickness of the semiconductor fabrication tool, and (b) at least one lower acoustic impedance material bordering at least a portion of the at least one higher acoustic impedance structure and forming at least a portion of a remainder of the respective unit cell.
摘要翻译：提供的示例声学带隙装置可以基于设计检查规则在半导体制造工具中制造。示例装置包括位于xy平面中并限定x方向和y方向的衬底，位于衬底上方的声学谐振腔，以及通过产生声子晶体作为多个位于声学谐振腔上方的声子晶体单元电池以周期性排列布置。每个单位单元包括：（a）至少一个较高声阻抗结构，其具有在y方向上定向的纵向轴线和在x方向上的厚度大于或约等于半导体制造工具的最小特征厚度，以及（b）与所述至少一个较高声阻抗结构的至少一部分接界并且形成相应单元电池的剩余部分的至少一部分的至少一个较低声阻抗材料。

2. 发明申请

WO2007056277A3 DIELECTRICALLY TRANSDUCED SINGLE-ENDED TO DIFFERENTIAL MEMS FILTER 审中-公开
标题翻译：电介质传输单端到差分MEMS滤波器
公开(公告)号：WO2007056277A3
公开(公告)日：2007-11-29
申请号：PCT/US2006043180
申请日：2006-11-03
申请人： CORNELL RES FOUNDATION INC , WEINSTEIN DANA , BHAVE SUNIL ASHOK
发明人： WEINSTEIN DANA , BHAVE SUNIL ASHOK
IPC分类号： H03H9/46 , H03H9/50
CPC分类号： H03H9/2431 , H03H3/0072 , H03H9/02259 , H03H9/02433 , H03H9/2436 , H03H9/505 , H03H2009/02354 , H03H2009/0248 , H03H2009/02503
摘要： A MEMS filter ( 128) has an input layer (74) for receiving a signal input (Vin), and an output layer (182) for providing a signal output The MEMS filter ( 128) also has a first resonator ( 130) and a second resonator (132) coupled to the first resonator (130) such that movement transduced in the first resonator ( 130) by the signal input causes movement of the second resonator (132) that transduce the signal output A method of manufacturing a MEMS filter is also disclosed A dielectric layer is formed on a base A patterned electrode layer is formed at least in part on the dielectric layer The base is etched to define a resonator structure A method of adjusting a desired input impedance and output impedance of a dielectrically transduced MEMS filter having transduction electrodes coupled to a dielectric film is further disclosed The method includes adjusting a DC bias voltage on the transduction electrodes.
摘要翻译： MEMS滤波器（128）具有用于接收信号输入（Vin）的输入层（74）和用于提供信号输出的输出层（182）。MEMS滤波器（128）还具有第一谐振器（130）和第二共振器（132），其耦合到所述第一谐振器（130），使得通过所述信号输入在所述第一谐振器（130）中转换的运动引起所述第二谐振器（132）的运动，所述第二谐振器（132）转换所述信号输出。还公开了在基底上形成介电层A至少部分地在电介质层上形成图案化的电极层。蚀刻基底以限定谐振器结构。调节所需输入阻抗和介电转换的MEMS滤波器的输出阻抗的方法进一步公开了具有耦合到电介质膜的换能电极。该方法包括调整转导电极上的DC偏置电压。

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