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1. 发明申请

WO2014163729A3 ACOUSTIC BANDGAP STRUCTURES FOR INTEGRATION OF MEMS RESONATORS 审中-公开
标题翻译：用于MEMS谐振器集成的声带结构
公开(公告)号：WO2014163729A3
公开(公告)日：2014-12-11
申请号：PCT/US2014012108
申请日：2014-01-17
申请人： MARATHE RADHIKA , BAHR BICHOY W , WANG WENTAO , WEINSTEIN DANA
发明人： MARATHE RADHIKA , BAHR BICHOY W , WANG WENTAO , WEINSTEIN DANA
IPC分类号： B81B3/00 , B81C1/00 , H03H3/007
CPC分类号： H04R1/00 , H03H9/02566 , H04R31/00 , H04R2201/003
摘要： Example acoustic bandgap devices provided that can be fabricated in a semiconductor fabrication tool based on design check rules. An example device includes a substrate lying in an x-y plane and defining an x-direction and a y-direction, an acoustic resonant cavity over the substrate, and a phononic crystal disposed over the acoustic resonant cavity by generating the phononic crystal as a plurality of unit cells disposed in a periodic arrangement. Each unit cell include: (a) at least one higher acoustic impedance structure having a longitudinal axis oriented in the y-direction and a thickness in the x-direction greater than or about equal to a minimal feature thickness of the semiconductor fabrication tool, and (b) at least one lower acoustic impedance material bordering at least a portion of the at least one higher acoustic impedance structure and forming at least a portion of a remainder of the respective unit cell.
摘要翻译：提供的示例声学带隙装置可以基于设计检查规则在半导体制造工具中制造。示例装置包括位于xy平面中并限定x方向和y方向的衬底，位于衬底上方的声学谐振腔，以及通过产生声子晶体作为多个位于声学谐振腔上方的声子晶体单元电池以周期性排列布置。每个单位单元包括：（a）至少一个较高声阻抗结构，其具有在y方向上定向的纵向轴线和在x方向上的厚度大于或约等于半导体制造工具的最小特征厚度，以及（b）与所述至少一个较高声阻抗结构的至少一部分接界并且形成相应单元电池的剩余部分的至少一部分的至少一个较低声阻抗材料。

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