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1. 发明申请

WO2019009785A1 A FIELD EMISSION CATHODE STRUCTURE FOR A FIELD EMISSION ARRANGEMENT 审中-公开
公开(公告)号：WO2019009785A1
公开(公告)日：2019-01-10
申请号：PCT/SE2018/050666
申请日：2018-06-20
申请人： LIGHTLAB SWEDEN AB , NANYANG TECHNOLOGICAL UNIVERSITY
发明人： TIRÉN, Jonas , HOLLMAN, Patrik , DEMIR, Hilmi Volkan , SHARMA, Vijay Kumar , TAN, Swee Tiam
IPC分类号： H01J63/02 , H01J1/304 , H01J7/18 , H01J63/06 , H01L23/26 , B81B7/02 , H01J9/02 , H01J61/30
摘要： The present disclosure generally relates to field emission cathode structure for a field emission arrangement, specifically adapted for enhance reliability and prolong the lifetime of the field emission arrangement by arranging a getter element underneath a gas permeable portion of the field emission cathode structure. The present disclosure also relates to a field emission lighting arrangement comprising such a field emission cathode structure and to a field emission lighting system.

2. 发明申请

WO2017052450A1 EXTRACTION STRUCTURE FOR A UV LAMP 审中-公开
标题翻译： UV灯的提取结构
公开(公告)号：WO2017052450A1
公开(公告)日：2017-03-30
申请号：PCT/SE2016/050874
申请日：2016-09-19
申请人： LIGHTLAB SWEDEN AB , NANYANG TECHNOLOGICAL UNIVERSITY
发明人： TIRÉN, Jonas , DEMIR, Hilmi Volkan
IPC分类号： G02B1/11 , H01J1/30 , H01J19/24 , H01J61/35 , H01J63/06 , A61L2/10 , A61L9/20
CPC分类号： G02B1/118 , A61L2/10 , A61L9/20 , H01J1/30 , H01J19/24 , H01J19/82 , H01J61/34 , H01J61/35 , H01J61/40 , H01J61/72 , H01J61/98 , H01J63/06 , H01J65/046
摘要： The present invention generally relates to an extraction structure for a UV lighting element. The present invention also relates to a UV lamp comprising such an extraction structure onto a substrate. The extraction structure comprises a plurality of nanostructures for anti-reflecting purposes. The nanostructures are grown on the top surface of at least one of the first and second side of the substrate.
摘要翻译：本发明一般涉及一种用于UV照明元件的提取结构。本发明还涉及一种在基板上包括这种提取结构的UV灯。提取结构包括用于抗反射目的的多个纳米结构。纳米结构在衬底的第一和第二侧中的至少一个的顶表面上生长。

3. 发明申请

WO2016096717A1 FIELD EMISSION LIGHT SOURCE 审中-公开
标题翻译：场发射光源
公开(公告)号：WO2016096717A1
公开(公告)日：2016-06-23
申请号：PCT/EP2015/079583
申请日：2015-12-14
申请人： LIGHTLAB SWEDEN AB , NANYANG TECHNOLOGICAL UNIVERSITY
发明人： TIRÉN, Jonas , DEMIR, Hilmi Volkan
IPC分类号： H01J63/04 , H01J63/06 , H01J61/30
CPC分类号： H01J63/02 , H01J1/3044 , H01J61/30 , H01J63/04 , H01J63/06 , H01J2893/0031
摘要： The present invention generally relates to a field emission light source and specifically to a miniaturized field emission light source that is possible to manufacture in large volumes at low cost using the concept of wafer level manufacturing, i.e. a similar approach as used by IC's and MEMS. The invention also relates to a lighting arrangement comprising at least one field emission light source. The field emission light source comprises: - a field emission cathode (106) comprising a plurality of nanostructures (104) formed on a substrate; - an electrically conductive anode structure (108) comprising a first wavelength converting material (118) arranged to cover at least a portion of the anode structure, wherein the first wavelength converting material is configured to receive electrons emitted from the field emission cathode and to emit light of a first wavelength range, and - means for forming an hermetically sealed and subsequently evacuated cavity (106) between the substrate of the field emission cathode and the anode structure, including a spacer structure (302, 110) arranged to encircle the plurality of nanostructures, wherein the substrate for receiving the plurality of nanostructures is a wafer (102').
摘要翻译：本发明一般涉及一种场发射光源，具体涉及一种使用晶片级制造的概念即IC和MEMS使用的类似方法可以以低成本大量制造的小型化场发射光源。本发明还涉及包括至少一个场发射光源的照明装置。场发射光源包括： - 场致发射阴极（106），包括形成在衬底上的多个纳米结构（104）; - 导电阳极结构（108），包括布置成覆盖所述阳极结构的至少一部分的第一波长转换材料（118），其中所述第一波长转换材料被配置为接收从所述场发射阴极发射的电子并发射第一波长范围的光;以及用于在场致发射阴极的衬底和阳极结构之间形成气密密封并随后抽空的空腔（106）的装置，包括间隔结构（302,110），其被设置成环绕多个纳米结构，其中用于接收多个纳米结构的基底是晶片（102'）。

4. 发明申请

WO2018151645A1 A CHIP TESTING METHOD AND AN APPARATUS FOR TESTING OF A PLURALITY OF FIELD EMISSION LIGHT SOURCES 审中-公开
公开(公告)号：WO2018151645A1
公开(公告)日：2018-08-23
申请号：PCT/SE2018/050115
申请日：2018-02-08
申请人： LIGHTLAB SWEDEN AB , NANYANG TECKNOLOGICAL UNIVERSITY
发明人： TIRÉN, Jonas , DEMIR, Hilmi Volkan , SHARMA, Vijay Kumar , TAN, Swee Tiam
IPC分类号： H01J9/42 , G01R31/24 , H01J63/04 , H01J63/06
摘要： The present invention generally relates to a method for operating a plurality of field emission light sources, specifically for performing a testing procedure in relation to a plurality of field emission light sources manufactured in a chip based fashion. Each field emission light source comprising a cathode side including an electrical cathode connection and an oppositely arranged anode side including an electrical cathode connection. The method comprises: - arranging the plurality of field emission light sources in vicinity of each other in a matrix formation having m rows and n columns, where the electrical cathode connections for the field emission light sources are electrically connected to each other in line with the columns, and the electrical anode connection for the field emission light sources are electrically connected to each other in line with the rows, - providing an electrical interface point for each of the m rows and the n columns, and - applying a control signal to at least one of the electrical interface points at each of the m rows and to at least one of the electrical interface points at each of the n columns, thereby energizing at least one of the field emission light sources for emitting light. The invention also relates to a corresponding testing system.

5. 发明申请

WO2013066266A1 A LIGHT-EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：WO2013066266A1
公开(公告)日：2013-05-10
申请号：PCT/SG2012/000407
申请日：2012-10-30
申请人： NANYANG TECHNOLOGICAL UNIVERSITY
发明人： DEMIR, Hilmi Volkan , SUN, Xiaowei
IPC分类号： H01L51/52 , H01L27/28 , H01L33/26 , B82Y20/00 , H01L51/54
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/06 , H01L51/0039 , H01L51/0092 , H01L51/502 , H01L51/5088 , H01L51/5092
摘要： A light-emitting device comprising: a hole injection layer, an electron injection layer, and a composite emitter layer including a soft material exciton donor and exciton acceptor nanoparticles substantially dispersed within the exciton donor matrix, wherein electrons from the electron injection layer and holes from the hole injection layer generate excitons in the exciton donor matrix, and the primary mechanism of photon generation at the nanoparticles is substantially through non-radiative energy transfer of the generated excitons directly into the nanoparticles.
摘要翻译：一种发光器件，包括：空穴注入层，电子注入层和包含基本上分散在激子供体矩阵内的软质激子供体和激子受体纳米颗粒的复合发射极层，其中来自电子注入层的电子和来自空穴注入层在激子供体矩阵中产生激子，并且纳米颗粒处的光子产生的主要机制基本上是通过将所产生的激子直接纳入纳米颗粒的非辐射能量转移。

6. 发明申请

WO2019054943A1 LIGHT-EMITTING DEVICE AND METHOD OF FORMING THE SAME 审中-公开
公开(公告)号：WO2019054943A1
公开(公告)日：2019-03-21
申请号：PCT/SG2018/050464
申请日：2018-09-11
申请人： NANYANG TECHNOLOGICAL UNIVERSITY
发明人： ZHANG, Xueliang , TAN, Swee Tiam , DEMIR, Hilmi Volkan
IPC分类号： H01L33/10 , H01L33/06 , H01L33/14
摘要： Various embodiments may provide a light-emitting device. The light-emitting device may include an epitaxial stack arrangement. The epitaxial stack arrangement may also include a first semiconductor layer of a first conductivity type. The epitaxial stack arrangement may further include a second semiconductor layer of a second conductivity type different from the first conductivity type. The epitaxial stack arrangement may additionally include an active layer between the first semiconductor layer and the second semiconductor layer. The light-emitting device may also include a reflector stack arrangement over the epitaxial stack arrangement. The reflector stack arrangement may include a first dielectric structure. The reflector stack arrangement may also include a second dielectric structure on the first dielectric structure. The reflector stack arrangement may further include a reflector structure on the second dielectric structure. The reflector stack arrangement may additionally include a third dielectric structure on the reflector layer.

7. 发明申请

WO2015174925A1 LIGHT-EMITTING DEVICE AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：发光装置及其形成方法
公开(公告)号：WO2015174925A1
公开(公告)日：2015-11-19
申请号：PCT/SG2015/050105
申请日：2015-05-11
申请人： NANYANG TECHNOLOGICAL UNIVERSITY
发明人： LIU, Wei , KYAW, Zabu , ZHANG, Zi-hui , ZHU, Binbin , JU, Zhengang , TAN, Swee Tiam , ZHANG, Xueliang , DEMIR, Hilmi Volkan
IPC分类号： H01L33/14
CPC分类号： H01L33/06 , H01L33/007 , H01L33/32
摘要： Various embodiments provide methods of forming a light emitting device and a light emitting device formed thereof. The light emitting device of various embodiments alters the polarity of the polarization induced interface charges, such that the polarity induced charges at an interface of an active layer and an electron blocking layer of the light-emitting devices are negative.
摘要翻译：各种实施例提供了形成发光器件和由其形成的发光器件的方法。各种实施例的发光器件改变极化诱导的界面电荷的极性，使得在发光器件的有源层和电子阻挡层的界面处的极性感应电荷是负的。

8. 发明申请

WO2015174924A1 METHOD OF FORMING A LIGHT-EMITTING DEVICE 审中-公开
标题翻译：形成发光装置的方法
公开(公告)号：WO2015174924A1
公开(公告)日：2015-11-19
申请号：PCT/SG2015/050100
申请日：2015-05-07
申请人： NANYANG TECHNOLOGICAL UNIVERSITY
发明人： JU, Zhengang , LIU, Wei , ZHANG, Xueliang , TAN, Swee Tiam , JI, Yun , ZHANG, Zi-hui , DEMIR, Hilmi Volkan
IPC分类号： H01L33/62 , H01L33/36
CPC分类号： H01L33/647 , H01L33/0079 , H01L33/22 , H01L33/38 , H01L33/486 , H01L33/62 , H01L2224/16225 , H01L2933/0016 , H01L2933/0066 , H01L2933/0091
摘要： Various embodiments provide a method of forming a light-emitting device. The method may include providing a multi-layer structure, wherein the multi-layer structure includes a substrate, a first semiconductor layer of a first conductivity type, an active layer and a second semiconductor layer of a second conductivity type in sequence, and includes at least one metal contact formed on at least one of the first semiconductor layer and the second semiconductor layer. The method further includes forming at least one trench over the at least one metal contact, and forming at least one metal support in the at least one trenches.
摘要翻译：各种实施例提供了一种形成发光器件的方法。该方法可以包括提供多层结构，其中多层结构依次包括基底，第一导电类型的第一半导体层，有源层和第二导电类型的第二半导体层，并且包括在形成在第一半导体层和第二半导体层中的至少一个上的至少一个金属接触。所述方法还包括在所述至少一个金属接触件上方形成至少一个沟槽，以及在所述至少一个沟槽中形成至少一个金属支撑件。

9. 发明申请

WO2013191649A1 A LIGHT-EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：WO2013191649A1
公开(公告)日：2013-12-27
申请号：PCT/SG2013/000224
申请日：2013-05-30
申请人： NANYANG TECHNOLOGICAL UNIVERSITY
发明人： ZHANG, Zi-Hui , TAN, Swee Tiam , SUN, Xiaowei , DEMIR, Hilmi Volkan
IPC分类号： H01L33/00
CPC分类号： H01L33/0016 , H01L33/005 , H01L33/04 , H01L33/14 , H01L33/28 , H01L33/30 , H01L33/32 , H01L33/40
摘要： A light emitting device comprising a plurality of current spreading layers including a first P doped layer, a first N doped layer and a second P doped layer, wherein the N doped layer having a doping level and thickness configured for substantial depletion or full depletion.
摘要翻译：一种包括多个电流扩展层的发光器件，包括第一P掺杂层，第一N掺杂层和第二P掺杂层，其中所述N掺杂层具有被配置为实质耗尽或完全耗尽的掺杂水平和厚度。

10. 发明申请

WO2019054942A1 LIGHT-EMITTING DEVICE AND METHOD OF FORMING THE SAME 审中-公开
公开(公告)号：WO2019054942A1
公开(公告)日：2019-03-21
申请号：PCT/SG2018/050463
申请日：2018-09-11
申请人： NANYANG TECHNOLOGICAL UNIVERSITY
发明人： ZHANG, Xueliang , TAN, Swee Tiam , DEMIR, Hilmi Volkan
IPC分类号： H01L33/14 , H01L33/06 , H01L33/10
摘要： Various embodiments may provide a light-emitting device. The light-emitting device may include a first semiconductor layer of a first conductivity type. The light-emitting device may also include a second semiconductor layer of a second conductivity type different from the first conductivity type. The light-emitting device may further include an active layer between the first semiconductor layer and the second semiconductor layer. The light-emitting device may include a current guide layer having a first surface in contact with a first portion of the second semiconductor layer, the current guide layer including a dielectric material. The light-emitting device may further include an electrically conductive layer in contact with a second portion of the second semiconductor layer. The light-emitting device may also include a first electrode in contact with the electrically conductive layer. The light-emitting device may further include a second electrode in contact with the first semiconductor layer.

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