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    • 3. 发明申请
    • METHOD OF FABRICATING SEMICONDUCTOR DEVICES
    • 制造半导体器件的方法
    • WO2014120086A1
    • 2014-08-07
    • PCT/SG2013/000542
    • 2013-12-19
    • NANYANG TECHNOLOGICAL UNIVERSITY
    • LIU, WeiZHANG, Zi-HuiJU, ZhengangZHANG, XueliangJI, YunTAN, Swee, TiamSUN, Xiao, WeiDEMIR, Hilmi, Volkan
    • H01L33/00H01L21/78
    • H01L33/0095H01L33/0079H01L33/62H01L2933/0016H01L2933/0066
    • Vertical high power LEDs are the technological choice for the application of general lighting due to their advantages of high efficiency and capability of handling high power. However, the technologies of vertical LED fabrication reported so far involve the wafer-level metal substrate substitution which may cause large stress due to the mismatch between metal substrate and LED layer. Moreover, the metal substrate has to be diced to separate LED dies which may cause metal contamination and thus increase the leakage current. These factors will lower the yield of LED production and increase the cost as well. The present invention is to disclose a novel method for the fabrication of GaN vertical high power LEDs and/or a novel method for the fabrication of GaN vertical high power LEDs which is compatible to mass production conditions. The novelty of the invention is that the island metal plating is conducted with the help of pattern formation techniques. Due to the small area of the islands, the stress generated between LED layer and metal islands is much less significant. Furthermore, due to the island metal plating and through the application of temporary supporting carriers the LED dies will be separated at the end of the fabrication process automatically or simply by applying slight mechanical stress or stretching the adhesive tape. This advantage avoids the metal dicing step and reduces the possibility of metal contamination and leakage current generation. Therefore, high yield and low cost will be realized using this novel method in LED production.
    • 由于高效率和高功率处理的优点,垂直大功率LED是普通照明应用的技术选择。 然而,到目前为止报道的垂直LED制造技术涉及晶片级金属基板的取代,这可能由于金属基板和LED层之间的失配而引起大的应力。 此外,金属基板必须被切割成分开的LED管芯,这可能导致金属污染并因此增加漏电流。 这些因素将降低LED生产的产量,并增加成本。 本发明公开了一种用于制造GaN垂直高功率LED的新颖方法和/或用于制造与大规模生产条件兼容的GaN垂直高功率LED的新颖方法。 本发明的新颖之处在于,借助于图案形成技术来进行岛金属电镀。 由于岛的面积很小,LED层和金属岛之间产生的应力要小得多。 此外,由于岛金属电镀和通过施加临时支撑载体,LED管芯将在制造过程结束时自动或简单地通过施加轻微的机械应力或拉伸粘合带而分离。 这个优点避免了金属切割步骤,并降低了金属污染和漏电流产生的可能性。 因此,在LED生产中使用这种新颖的方法可以实现高产量和低成本。