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1. 发明申请

WO2007145801A2 METHOD AND APPARATUS TO DETECT FAULT CONDITIONS OF A PLASMA PROCESSING REACTOR 审中-公开
标题翻译：检测等离子体加工反应器的故障条件的方法和装置
公开(公告)号：WO2007145801A2
公开(公告)日：2007-12-21
申请号：PCT/US2007012581
申请日：2007-05-25
申请人： LAM RES CORP , KEIL DOUGLAS , HUDSON ERIC , KIMBALL CHRIS , FISCHER ANDREAS
发明人： KEIL DOUGLAS , HUDSON ERIC , KIMBALL CHRIS , FISCHER ANDREAS
IPC分类号： C23C14/00
CPC分类号： C23C16/52 , C23C16/509 , H01J37/32935 , H01J37/3299
摘要： A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber and analyzing the resulting information. Such analysis enables detection of failures and the diagnosis of failure modes in a plasma processing reactor during the course of wafer processing. The method comprises measuring the plasma parameters as a function of time and analyzing the resulting data. The data can be observed, characterized, compared with reference data, digitized, processed, or analyzed in any way to reveal a specific fault. Monitoring can be done with a detector such as a probe, which is preferably maintained within the plasma chamber substantively coplanar with a surface within the chamber, and directly measures net ion flux and other plasma parameters. The detector is preferably positioned at a grounded surface within the reactor such as a grounded showerhead electrode, and can be of a planar ion flux probe (PIF) type or a non-capacitive type. Chamber faults that can be detected include a build-up of process by-products in the process chamber, a helium leak, a match re-tuning event, a poor stabilization rate, and a loss of plasma confinement. If the detector is a probe, the probe can be embedded in a part of a plasma processing chamber and can comprises one or more gas feed-through holes.
摘要翻译：提供了一种用于等离子体处理室的故障检测方法。该方法包括监测等离子体室内的等离子体参数并分析所得到的信息。这样的分析使得能够在晶片处理过程中检测等离子体处理反应器中的故障和故障模式的诊断。该方法包括测量作为时间的函数的等离子体参数并分析所得到的数据。数据可以观察，表征，与参考数据进行比较，数字化，处理或分析，以显示特定故障。可以用诸如探针的检测器进行监测，该探针优选地保持在与腔室内的表面基本上共面的等离子体室内，并且直接测量净离子通量和其它等离子体参数。检测器优选地位于反应器内的接地表面，例如接地喷头电极，并且可以是平面离子通量探针（PIF）型或非电容型。可以检测到的室内故障包括处理室中的过程副产物的积聚，氦泄漏，匹配重新调谐事件，差的稳定化速率和等离子体约束的损失。如果检测器是探针，则探针可以嵌入在等离子体处理室的一部分中，并且可以包括一个或多个气体馈通孔。

2. 发明申请

WO2006104841B1 METHODS AND APPARATUS FOR DETERMINING THE ENDPOINT OF A CLEANING OR CONDITIONING PROCESS IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：用于确定等离子体处理系统中的清洁或调节过程的端点的方法和装置
公开(公告)号：WO2006104841B1
公开(公告)日：2008-02-21
申请号：PCT/US2006010576
申请日：2006-03-24
申请人： LAM RES CORP , HUDSON ERIC , KEIL DOUGLAS , MARAKHTANOV ALEXEI
发明人： HUDSON ERIC , KEIL DOUGLAS , MARAKHTANOV ALEXEI
IPC分类号： B05C11/00 , B05C13/00 , C23C16/00
CPC分类号： H01J37/32963 , H01J37/32935
摘要： A method of determining an endpoint of a process by measuring a thickness of a layer, the layer being deposited on the surface by a prior process is disclosed. The method includes providing a sensor that is coplanar with the surface, wherein the sensor is configured to measure the thickness. The method also includes exposing the plasma chamber to a plasma, wherein the thickness is changed by the exposing, and determining the thickness as a function of time. The method further includes ascertaining a steady state condition in the thickness, the steady state condition being characterized by a substantially stable measurement of the thickness, a start of the steady state condition representing the endpoint.
摘要翻译：公开了一种通过测量层的厚度来确定工艺的端点的方法，该层通过先前的工艺沉积在表面上。该方法包括提供与表面共面的传感器，其中传感器被配置成测量厚度。该方法还包括将等离子体室暴露于等离子体，其中通过曝光来改变厚度，并且确定作为时间的函数的厚度。该方法还包括确定厚度中的稳定状态条件，稳态条件的特征在于厚度的基本上稳定的测量，表示端点的稳态条件的开始。

3. 发明申请

WO2008008259A2 APPARATUS AND METHOD FOR CONTROLLING PLASMA POTENTIAL 审中-公开
标题翻译：用于控制等离子体潜能的装置和方法
公开(公告)号：WO2008008259A2
公开(公告)日：2008-01-17
申请号：PCT/US2007015509
申请日：2007-07-06
申请人： LAM RES CORP , KEIL DOUGLAS , LI LUMIN , SADJADI REZA , HUDSON ERIC , LENZ ERIC , DHINDSA RAJINDER
发明人： KEIL DOUGLAS , LI LUMIN , SADJADI REZA , HUDSON ERIC , LENZ ERIC , DHINDSA RAJINDER
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The upper electrode is disposed above the lower electrode and is electrically isolated from the chamber. A voltage source is connected to the upper electrode. The voltage source is defined to control an electric potential of the upper electrode relative to the chamber. The electric potential of the upper electrode as controlled by the voltage source is capable of influencing an electric potential of the plasma to be generated between the lower and upper electrodes.
摘要翻译：提供了一种用于半导体晶片等离子体处理的装置。该装置包括具有下电极和设置在其中的上电极的腔室。下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。上电极设置在下电极的上方，并与腔电隔离。电压源连接到上电极。电压源被定义为控制上电极相对于腔室的电位。由电压源控制的上电极的电位能够影响在下电极和上电极之间产生的等离子体的电位。

4. 发明申请

WO2006104841A2 METHODS AND APPARATUS FOR DETERMINING THE ENDPOINT OF A CLEANING OR CONDITIONING PROCESS IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：用于确定等离子体处理系统中的清洁或调节过程的端点的方法和装置
公开(公告)号：WO2006104841A2
公开(公告)日：2006-10-05
申请号：PCT/US2006010576
申请日：2006-03-24
申请人： LAM RES CORP , HUDSON ERIC , KEIL DOUGLAS , MARAKHTANOV ALEXEI
发明人： HUDSON ERIC , KEIL DOUGLAS , MARAKHTANOV ALEXEI
IPC分类号： C23C16/52 , B05C11/00 , C23C16/00
CPC分类号： H01J37/32963 , H01J37/32935
摘要： A method of determining an endpoint of a process by measuring a thickness of a layer, the layer being deposited on the surface by a prior process is disclosed. The method includes providing a sensor that is coplanar with the surface, wherein the sensor is configured to measure the thickness. The method also includes exposing the plasma chamber to a plasma, wherein the thickness is changed by the exposing, and determining the thickness as a function of time. The method further includes ascertaining a steady state condition in the thickness, the steady state condition being characterized by a substantially stable measurement of the thickness, a start of the steady state condition representing the endpoint.
摘要翻译：公开了一种通过测量层的厚度来确定工艺的端点的方法，该层通过先前的工艺沉积在表面上。该方法包括提供与表面共面的传感器，其中传感器被配置成测量厚度。该方法还包括将等离子体室暴露于等离子体，其中通过曝光来改变厚度，并且确定作为时间的函数的厚度。该方法还包括确定厚度中的稳定状态条件，稳态条件的特征在于厚度的基本上稳定的测量，表示端点的稳态条件的开始。

5. 发明申请

WO2007005210A2 APPARATUS FOR MEASURING A SET OF ELECTRICAL CHARACTERISTICS IN A PLASMA 审中-公开
标题翻译：用于测量等离子体中一组电特性的装置
公开(公告)号：WO2007005210A2
公开(公告)日：2007-01-11
申请号：PCT/US2006023027
申请日：2006-06-13
申请人： LAM RES CORP , KIMBALL CHRISTOPHER , HUDSON ERIC , KEIL DOUGLAS , MARAKHTANOV ALEXEI
发明人： KIMBALL CHRISTOPHER , HUDSON ERIC , KEIL DOUGLAS , MARAKHTANOV ALEXEI
IPC分类号： C02F1/00
CPC分类号： H01J37/32431 , H01J37/32935 , H05H1/0081 , Y10T29/49002
摘要： A probe apparatus configured to measure a set of electrical characteristics in a plasma processing chamber, the plasma processing chamber including a set of plasma chamber surfaces configured to be exposed to a plasma is disclosed.The probe apparatus includes a collection disk structure configured to be exposed to the plasma, whereby the collection disk structure is coplanar with at least one of the set of plasma chamber surfaces. The probe apparatus also includes a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers, wherein the set of electrical characteristics is generated by an ion flux of the plasma. The probe apparatus further includes an insulation barrier configured to substantially electrically separate the collection disk and the conductive path from the set of plasma chamber surfaces.
摘要翻译：探针装置被配置为测量等离子体处理室中的一组电特性，所述等离子体处理室包括一组等离子体室表面，所述一组等离子体室表面被配置为暴露于等离子体。探针装置包括收集盘结构，由此收集盘结构与该组等离子体室表面中的至少一个共面。所述探针装置还包括导电路径，所述导电路径被配置为将所述一组电特性从所述收集盘结构传送到一组换能器，其中所述一组电特性由所述等离子体的离子通量产生。探针装置还包括绝缘屏障，该绝缘屏障被配置为将收集盘和导电路径基本上与等离子体室表面集合电分离。

6. 发明申请

WO2008010943A3 HYBRID RF CAPACITIVELY AND INDUCTIVELY COUPLED PLASMA SOURCE USING MULTIFREQUENCY RF POWERS AND METHODS OF USE THEREOF 审中-公开
标题翻译：混合射频功率和电感耦合等离子体源使用多频RF功率及其使用方法
公开(公告)号：WO2008010943A3
公开(公告)日：2009-04-09
申请号：PCT/US2007015928
申请日：2007-07-13
申请人： LAM RES CORP , MARAKHTANOV ALEXEI , DHINDSA RAJINDER , HUDSON ERIC , FISCHER ANDREAS
发明人： MARAKHTANOV ALEXEI , DHINDSA RAJINDER , HUDSON ERIC , FISCHER ANDREAS
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32091 , H01J2237/03
摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.
摘要翻译：用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

7. 发明申请

WO2010080421A4 CONTROLLING ION ENERGY DISTRIBUTION IN PLASMA PROCESSING SYSTEMS 审中-公开
标题翻译：控制等离子体处理系统中的离子能量分布
公开(公告)号：WO2010080421A4
公开(公告)日：2010-10-07
申请号：PCT/US2009068186
申请日：2009-12-16
申请人： LAM RES CORP , FISCHER ANDREAS , HUDSON ERIC
发明人： FISCHER ANDREAS , HUDSON ERIC
IPC分类号： H05H1/36 , H01L21/3065
CPC分类号： H01J37/32623 , H01J37/32091
摘要： A plasma processing system for processing at least a substrate with plasma. The plasma processing chamber is capable of controlling ion energy distribution. The plasma processing system may include a first electrode. The plasma processing system also includes a second electrode that is different from the first electrode and is configured for bearing the substrate. The plasma processing system may also include a signal source coupled with the first electrode. The signal source may provide a non-sinusoidal signal through the first electrode to control ion energy distribution at the substrate when the substrate is processed in the plasma processing system, wherein the non-sinusoidal signal is periodic.
摘要翻译：用等离子体处理至少一个衬底的等离子体处理系统。等离子体处理室能够控制离子能量分布。等离子体处理系统可以包括第一电极。等离子体处理系统还包括第二电极，该第二电极不同于第一电极并被配置用于承载衬底。等离子体处理系统还可以包括与第一电极耦合的信号源。当在等离子体处理系统中处理衬底时，信号源可以通过第一电极提供非正弦信号，以控制衬底处的离子能量分布，其中非正弦信号是周期性的。

8. 发明申请

WO2010071785A3 PLASMA CONFINEMENT STRUCTURES IN PLASMA PROCESSING SYSTEMS 审中-公开
标题翻译：等离子体处理系统中的等离子体约束结构
公开(公告)号：WO2010071785A3
公开(公告)日：2010-10-14
申请号：PCT/US2009068195
申请日：2009-12-16
申请人： LAM RES CORP , HUDSON ERIC , FISCHER ANDREAS
发明人： HUDSON ERIC , FISCHER ANDREAS
IPC分类号： H05H1/24 , H05H1/34
CPC分类号： C23C16/00 , C23F1/00 , H01J37/32082 , H01J37/32623
摘要： A movable plasma confinement structure configured for confining plasma in a plasma processing chamber during plasma processing of a substrate is provided. The movable plasma confinement structure includes a movable plasma-facing structure configured to surround the plasma. The movable plasma confinement structure also includes a movable electrically conductive structure disposed outside of the movable plasma-facing structure and configured to be deployed and retracted with the movable plasma-facing structure as a single unit to facilitate handling of the substrate. The movable electrically conductive structure is radio frequency (RF) grounded during the plasma processing. The movable plasma-facing structure is disposed between the plasma and the movable electrically conductive structure during the plasma processing such that RF current from the plasma flows to the movable electrically conductive structure through the movable plasma-facing structure during the plasma processing.
摘要翻译：提供了一种可移动的等离子体约束结构，其被配置用于在等离子体处理基板期间将等离子体限制在等离子体处理室中。可移动的等离子体约束结构包括构造成围绕等离子体的可移动的面向等离子体的结构。可移动的等离子体约束结构还包括可移动的导电结构，该可移动的导电结构布置在可移动的面向等离子体的结构的外部并且被配置为与可移动的面向等离子体的结构一起作为单个单元展开和缩回以便于处理基板。可移动导电结构在等离子体处理期间是射频（RF）接地。在等离子体处理期间，可移动的面向等离子体的结构设置在等离子体和可移动的导电结构之间，使得来自等离子体的RF电流在等离子体处理期间通过可移动的面向等离子体的结构流向可移动的导电结构。

9. 发明申请

WO2010080420A2 METHODS AND APPARATUS FOR DUAL CONFINEMENT AND ULTRA-HIGH PRESSURE IN AN ADJUSTABLE GAP PLASMA CHAMBER 审中-公开
标题翻译：用于可调间隙等离子室中的双重约束和超高压力的方法和装置
公开(公告)号：WO2010080420A2
公开(公告)日：2010-07-15
申请号：PCT/US2009068183
申请日：2009-12-16
申请人： LAM RES CORP , FISCHER ANDREAS , HUDSON ERIC
发明人： FISCHER ANDREAS , HUDSON ERIC
IPC分类号： H05H1/34
CPC分类号： H01J37/32091 , H01J37/32449 , H01J37/32532 , H01J37/32541 , H01J37/32568 , H01J37/32623 , H01J37/32642 , H01J37/32816 , H01J37/3299 , H01L21/3065
摘要： A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate. The substrate is disposed on the lower electrode during plasma processing, where the upper electrode and the substrate forms a first gap. The plasma processing system also includes an upper electrode peripheral extension (UE-PE). The UE-PE is mechanically coupled to a periphery of the upper electrode, where the UE-PE is configured to be non-coplanar with the upper electrode. The plasma processing system further includes a cover ring. The cover ring is configured to concentrically surround the lower electrode, where the UE-PE and the cover ring forms a second gap.
摘要翻译：提供了一种等离子体处理系统，具有配置用于处理基板的等离子体处理室。等离子体处理系统至少包括用于处理基板的上电极和下电极。在等离子体处理期间，衬底布置在下电极上，其中上电极和衬底形成第一间隙。等离子体处理系统还包括上电极外围扩展（UE-PE）。 UE-PE机械耦合到上电极的外围，其中UE-PE被配置为与上电极不共面。等离子体处理系统还包括盖环。覆盖环配置成同心地围绕下电极，其中UE-PE和覆盖环形成第二间隙。

10. 发明申请

WO2010080421A2 CONTROLLING ION ENERGY DISTRIBUTION IN PLASMA PROCESSING SYSTEMS 审中-公开
标题翻译：控制离子能量分布在等离子体处理系统中
公开(公告)号：WO2010080421A2
公开(公告)日：2010-07-15
申请号：PCT/US2009068186
申请日：2009-12-16
申请人： LAM RES CORP , FISCHER ANDREAS , HUDSON ERIC
发明人： FISCHER ANDREAS , HUDSON ERIC
IPC分类号： H05H1/36 , H01L21/3065
CPC分类号： H01J37/32623 , H01J37/32091
摘要： A plasma processing system for processing at least a substrate with plasma. The plasma processing chamber is capable of controlling ion energy distribution. The plasma processing system may include a first electrode. The plasma processing system also includes a second electrode that is different from the first electrode and is configured for bearing the substrate. The plasma processing system may also include a signal source coupled with the first electrode. The signal source may provide a non-sinusoidal signal through the first electrode to control ion energy distribution at the substrate when the substrate is processed in the plasma processing system, wherein the non-sinusoidal signal is periodic.
摘要翻译：一种等离子体处理系统，用于至少用等离子体处理衬底。等离子体处理室能够控制离子能量分布。等离子体处理系统可以包括第一电极。等离子体处理系统还包括与第一电极不同的第二电极，并且构造成用于承载衬底。等离子体处理系统还可以包括与第一电极耦合的信号源。当在等离子体处理系统中处理衬底时，信号源可以通过第一电极提供非正弦信号以控制衬底处的离子能量分布，其中非正弦信号是周期性的。

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