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1. 发明申请

WO2012017378A3 METHODS FOR STABILIZING CONTACT SURFACES OF ELECTROSTATIC CHUCKS 审中-公开
标题翻译：用于稳定静电切片接触表面的方法
公开(公告)号：WO2012017378A3
公开(公告)日：2012-06-07
申请号：PCT/IB2011053417
申请日：2011-08-01
申请人： LAM RES CORP , LAM RES AG , KIMBALL CHRIS , STEVENSON TOM , MURAOKA PETER
发明人： KIMBALL CHRIS , STEVENSON TOM , MURAOKA PETER
IPC分类号： H01L21/683 , B23Q3/15 , H01L21/687 , H02N13/00
CPC分类号： B08B7/0064 , B08B1/00 , H01L21/6831
摘要： Methods for stabilizing a ceramic contact surface of an electrostatic chuck, wherein the electrostatic chuck can be disposed within a reaction chamber of a semiconductor wafer processing assembly including a radio frequency source and a coolant gas supply are described herein. The method may include: clamping electrostatically a conditioning wafer to the ceramic contact surface of the electrostatic chuck; and cycling an output power of the radio frequency source and an output pressure of the coolant gas supply for multiple hot/cold cycles. Each of the hot/cold cycles includes a hot abrasion state and a cold abrasion state. At the hot abrasion state, the output power of the radio frequency source is relatively high and the output pressure of the coolant gas supply is relatively low to yield a relatively hot conditioning wafer. At the cold abrasion state, the output power of the radio frequency source is relatively low and the output pressure of the coolant gas supply is relatively high to yield a relatively cool conditioning wafer.
摘要翻译：本文描述了用于稳定静电卡盘的陶瓷接触表面的方法，其中静电卡盘可以设置在包括射频源和冷却剂气体源的半导体晶片处理组件的反应室内。该方法可以包括：将调理晶片静电夹持到静电卡盘的陶瓷接触表面; 并且循环射频源的输出功率和多个热/冷循环的冷却剂气体供应的输出压力。每个热/冷循环包括热磨损状态和冷磨损状态。在热磨损状态下，射频源的输出功率相对较高，并且冷却剂气体供应的输出压力相对较低以产生相对热调节的晶片。在冷磨损状态下，射频源的输出功率相对较低，并且冷却剂气体供应的输出压力相对较高以产生相对较冷的调节晶片。

2. 发明申请

WO2011065965A3 AN ELECTROSTATIC CHUCK WITH AN ANGLED SIDEWALL 审中-公开
标题翻译：带有斜面侧壁的静电卡盘
公开(公告)号：WO2011065965A3
公开(公告)日：2011-09-09
申请号：PCT/US2010003013
申请日：2010-11-22
申请人： LAM RES CORP , DHINDSA RAJINDER , MANKIDY PRATIK , KIMBALL CHRIS
发明人： DHINDSA RAJINDER , MANKIDY PRATIK , KIMBALL CHRIS
IPC分类号： C23C16/44 , C23C16/458 , C23F4/04 , H01L21/48
CPC分类号： H01L21/6831 , C23C16/4405 , C23C16/4586 , H01J37/32541 , H01L21/68735
摘要： A substrate support for a plasma processing chamber has an angled sidewall at an upper periphery thereof. The substrate is surrounded by an edge ring which underlies a substrate supported on an upper substrate support surface of the substrate support during plasma processing. The angled sidewall is the only surface of the substrate support exposed and subject to byproduct deposition during plasma processing. The angled sidewall enhances sputtering rate of the byproduct deposition during an in situ chamber clean process wherein a cleaning gas supplied to the chamber is energized into a plasma state for cleaning the byproduct deposition.
摘要翻译：用于等离子体处理室的衬底支撑件在其上部周边处具有成角度的侧壁。在等离子体处理期间，衬底被支撑在衬底支撑件的上衬底支撑表面上的衬底下方的边缘环围绕。成角度的侧壁是暴露的衬底支撑件的唯一表面，并且在等离子体处理期间经受副产物沉积。成角度的侧壁在原位室清洁过程期间增强了副产品沉积的溅射速率，其中供应到室的清洁气体被激励成等离子体状态以清洁副产品沉积。

3. 发明申请

WO2011065965A2 AN ELECTROSTATIC CHUCK WITH AN ANGLED SIDEWALL 审中-公开
标题翻译：一个带有安全帽的静电掣子
公开(公告)号：WO2011065965A2
公开(公告)日：2011-06-03
申请号：PCT/US2010/003013
申请日：2010-11-22
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , MANKIDY, Pratik , KIMBALL, Chris
发明人： DHINDSA, Rajinder , MANKIDY, Pratik , KIMBALL, Chris
IPC分类号： C23C16/44 , C23C16/458 , H01L21/48 , C23F4/04
CPC分类号： H01L21/6831 , C23C16/4405 , C23C16/4586 , H01J37/32541 , H01L21/68735
摘要： A substrate support for a plasma processing chamber has an angled sidewall at an upper periphery thereof. The substrate is surrounded by an edge ring which underlies a substrate supported on an upper substrate support surface of the substrate support during plasma processing. The angled sidewall is the only surface of the substrate support exposed and subject to byproduct deposition during plasma processing. The angled sidewall enhances sputtering rate of the byproduct deposition during an in situ chamber clean process wherein a cleaning gas supplied to the chamber is energized into a plasma state for cleaning the byproduct deposition.
摘要翻译：用于等离子体处理室的衬底支撑件在其上周边具有成角度的侧壁。基板被等离子体处理期间由支撑在基板支撑件的上基板支撑表面上的基板的下方的边缘环包围。成角度的侧壁是暴露于等离子体处理期间受副产物沉积的基板支架的唯一表面。成角度的侧壁在原位室清洁过程期间增强副产物沉积的溅射速率，其中供应到室的清洁气体被激发到等离子体状态以清洁副产物沉积。

4. 发明申请

WO2012017378A2 METHODS FOR STABILIZING CONTACT SURFACES OF ELECTROSTATIC CHUCKS 审中-公开
标题翻译：稳定静电卡接触表面的方法
公开(公告)号：WO2012017378A2
公开(公告)日：2012-02-09
申请号：PCT/IB2011/053417
申请日：2011-08-01
申请人： LAM RESEARCH CORPORATION , LAM RESEARCH AG , KIMBALL, Chris , STEVENSON, Tom , MURAOKA, Peter
发明人： KIMBALL, Chris , STEVENSON, Tom , MURAOKA, Peter
IPC分类号： H01L21/683 , H01L21/687 , B23Q3/15 , H02N13/00
CPC分类号： B08B7/0064 , B08B1/00 , H01L21/6831
摘要： Methods for stabilizing a ceramic contact surface of an electrostatic chuck, wherein the electrostatic chuck can be disposed within a reaction chamber of a semiconductor wafer processing assembly including a radio frequency source and a coolant gas supply are described herein. The method may include: clamping electrostatically a conditioning wafer to the ceramic contact surface of the electrostatic chuck; and cycling an output power of the radio frequency source and an output pressure of the coolant gas supply for multiple hot/cold cycles. Each of the hot/cold cycles includes a hot abrasion state and a cold abrasion state. At the hot abrasion state, the output power of the radio frequency source is relatively high and the output pressure of the coolant gas supply is relatively low to yield a relatively hot conditioning wafer. At the cold abrasion state, the output power of the radio frequency source is relatively low and the output pressure of the coolant gas supply is relatively high to yield a relatively cool conditioning wafer.
摘要翻译：本文描述了用于稳定静电吸盘的陶瓷接触表面的方法，其中静电吸盘可以设置在包括射频源和冷却剂气体供应源的半导体晶片处理组件的反应室内。该方法可以包括：将调节晶片静电夹持到静电吸盘的陶瓷接触表面; 以及循环所述射频源的输出功率和所述冷却剂气体供应的输出压力以用于多个热/冷循环。每个热/冷循环包括热磨损状态和冷磨损状态。在热磨损状态下，射频源的输出功率相对较高并且冷却剂气体供应的输出压力相对较低以产生相对热的调节晶片。在冷磨损状态下，射频源的输出功率相对较低，并且冷却剂气体供应的输出压力相对较高，以产生相对较冷的调节晶片。

5. 发明申请

WO2007145801A3 METHOD AND APPARATUS TO DETECT FAULT CONDITIONS OF A PLASMA PROCESSING REACTOR 审中-公开
公开(公告)号：WO2007145801A3
公开(公告)日：2007-12-21
申请号：PCT/US2007/012581
申请日：2007-05-25
申请人： LAM RESEARCH CORPORATION , KEIL, Douglas , HUDSON, Eric , KIMBALL, Chris , FISCHER, Andreas
发明人： KEIL, Douglas , HUDSON, Eric , KIMBALL, Chris , FISCHER, Andreas
IPC分类号： C23C14/00
摘要： A method of fault detection for use in a plasma processing chamber is provided The method comprises monitoring plasma parameters within a plasma chamber and analyzing the resulting information Such analysis enables detection of failures such as build-up of process by-products, a helium leak, a match re-tuning event, a poor stabilization rate, and a loss of plasma confinement Also enabled is the diagnosis of failure modes in a plasma processing reactor during the course of wafer processing The method comprises measuring the plasma parameters as a function of time and analyzing the resulting data Monitoring can be done with a detector such as a probe, which is preferably maintained within the plasma chamber substantively coplanar with a surface within the chamber, and directly measures net ion flux and other plasma parameters.

6. 发明申请

WO2007145801A2 METHOD AND APPARATUS TO DETECT FAULT CONDITIONS OF A PLASMA PROCESSING REACTOR 审中-公开
标题翻译：检测等离子体加工反应器的故障条件的方法和装置
公开(公告)号：WO2007145801A2
公开(公告)日：2007-12-21
申请号：PCT/US2007012581
申请日：2007-05-25
申请人： LAM RES CORP , KEIL DOUGLAS , HUDSON ERIC , KIMBALL CHRIS , FISCHER ANDREAS
发明人： KEIL DOUGLAS , HUDSON ERIC , KIMBALL CHRIS , FISCHER ANDREAS
IPC分类号： C23C14/00
CPC分类号： C23C16/52 , C23C16/509 , H01J37/32935 , H01J37/3299
摘要： A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber and analyzing the resulting information. Such analysis enables detection of failures and the diagnosis of failure modes in a plasma processing reactor during the course of wafer processing. The method comprises measuring the plasma parameters as a function of time and analyzing the resulting data. The data can be observed, characterized, compared with reference data, digitized, processed, or analyzed in any way to reveal a specific fault. Monitoring can be done with a detector such as a probe, which is preferably maintained within the plasma chamber substantively coplanar with a surface within the chamber, and directly measures net ion flux and other plasma parameters. The detector is preferably positioned at a grounded surface within the reactor such as a grounded showerhead electrode, and can be of a planar ion flux probe (PIF) type or a non-capacitive type. Chamber faults that can be detected include a build-up of process by-products in the process chamber, a helium leak, a match re-tuning event, a poor stabilization rate, and a loss of plasma confinement. If the detector is a probe, the probe can be embedded in a part of a plasma processing chamber and can comprises one or more gas feed-through holes.
摘要翻译：提供了一种用于等离子体处理室的故障检测方法。该方法包括监测等离子体室内的等离子体参数并分析所得到的信息。这样的分析使得能够在晶片处理过程中检测等离子体处理反应器中的故障和故障模式的诊断。该方法包括测量作为时间的函数的等离子体参数并分析所得到的数据。数据可以观察，表征，与参考数据进行比较，数字化，处理或分析，以显示特定故障。可以用诸如探针的检测器进行监测，该探针优选地保持在与腔室内的表面基本上共面的等离子体室内，并且直接测量净离子通量和其它等离子体参数。检测器优选地位于反应器内的接地表面，例如接地喷头电极，并且可以是平面离子通量探针（PIF）型或非电容型。可以检测到的室内故障包括处理室中的过程副产物的积聚，氦泄漏，匹配重新调谐事件，差的稳定化速率和等离子体约束的损失。如果检测器是探针，则探针可以嵌入在等离子体处理室的一部分中，并且可以包括一个或多个气体馈通孔。

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