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1. 发明申请

WO2005094244A3 SYSTEM, METHOD AND APPARATUS FOR SELF-CLEANING DRY ETCH 审中-公开
标题翻译：自清洁干燥系统，方法和装置
公开(公告)号：WO2005094244A3
公开(公告)日：2006-03-30
申请号：PCT/US2004043911
申请日：2004-12-30
申请人： LAM RES CORP , BAILEY ANDREW D III , LOHOKARE SHRIKANT P , HOWALD ARTHUR M , KIM YUNSANG
发明人： BAILEY ANDREW D III , LOHOKARE SHRIKANT P , HOWALD ARTHUR M , KIM YUNSANG
IPC分类号： B08B6/00 , B08B9/00 , B44C1/22 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/321 , H01L21/3213 , H01L21/44 , H01L21/461 , H01L21/4763 , H01L21/768 , H01L23/48 , H01L23/52 , H01L29/24 , H01L29/40 , H01L33/00
CPC分类号： B08B7/00 , B08B7/0035 , B08B7/0071 , H01J37/3244 , H01J37/32522 , H01J37/32862 , H01J2237/022 , H01L21/3065 , H01L21/32115 , H01L21/32136 , H01L21/67034 , H01L21/67051 , H01L21/67069 , H01L21/6708 , H01L21/7684 , Y10S438/905
摘要： A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.
摘要翻译：一种用于清洁处理室的方法，包括将处理室的内表面加热至第一温度。第一个温度足以使第一个物质变得挥发。第一种可以是沉积在内表面上的几种物质之一。将清洁化学品注入到处理室中。清洁化学品可以与第二种物质反应以将第二种类转化为第一种。挥发的第一种也可以从处理室输出。还描述了用于清洁处理室的系统。

2. 发明申请

WO2007038580A3 APPARATUS AND METHODS TO REMOVE FILMS ON BEVEL EDGE AND BACKSIDE OF WAFER 审中-公开
标题翻译：装置和方法去除水平边缘和背面的膜
公开(公告)号：WO2007038580A3
公开(公告)日：2007-08-09
申请号：PCT/US2006037648
申请日：2006-09-26
申请人： LAM RES CORP , KIM YUNSANG , BAILEY ANDREW D III
发明人： KIM YUNSANG , BAILEY ANDREW D III
IPC分类号： H01J37/32
CPC分类号： H01J37/32532 , H01J37/32357 , H01J37/3244 , H01J37/32862
摘要： Improved mechanisms of removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and etch byproducts on substrate backside and chamber interior is provided to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. An exemplary plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode surrounding a substrate support in the plasma processing chamber, wherein the substrate support is configured to receive the substrate and the bottom edge electrode and the substrate support are electrically isolated from each other by a bottom dielectric ring. The chamber also includes a top edge electrode surrounding a gas distribution plate opposing the substrate support, wherein the top edge electrode and the gas distribution plate are electrically isolated from each other by a top dielectric ring, and the top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate.
摘要翻译：提供了去除蚀刻副产物，电介质膜和金属薄膜附近基板斜边缘的改进机理，以及衬底背面和腔室内部的蚀刻副产物，以避免聚合物副产物和沉积膜的堆积并提高工艺产率。提供了一种构造成清洁衬底的斜边缘的示例性等离子体蚀刻处理室。所述腔室包括围绕所述等离子体处理室中的衬底支撑件的底部边缘电极，其中所述衬底支撑件构造成接收所述衬底，并且所述底部边缘电极和所述衬底支撑件通过底部电介质环彼此电隔离。该室还包括围绕与衬底支撑件相对的气体分配板的顶部边缘电极，其中顶部边缘电极和气体分布板通过顶部介电环彼此电隔离，并且顶部边缘电极和底部边缘电极被配置为产生清洁等离子体以清洁基板的斜边缘。

3. 发明申请

WO2006098888A2 PLASMA OXIDATION AND REMOVAL OF OXIDIZED MATERIAL 审中-公开
标题翻译：等离子体氧化和去除氧化材料
公开(公告)号：WO2006098888A2
公开(公告)日：2006-09-21
申请号：PCT/US2006007401
申请日：2006-02-27
申请人： LAM RES CORP , KIM YUNSANG , BAILEY ANDREW III , YOON HYUNGSUK ALEXANDER , HOWALD ARTHUR M
发明人： KIM YUNSANG , BAILEY ANDREW III , YOON HYUNGSUK ALEXANDER , HOWALD ARTHUR M
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/7684 , H01L21/31683 , H01L21/321 , H01L21/32115 , H01L21/32135 , H01L21/32136 , H01L21/32138 , H01L21/32139 , H01L21/76865 , H01L21/76885
摘要： A method of etching a conductive layer includes converting at least a portion of the conductive layer and etching the conductive layer to substantially remove the converted portion of the conductive layer and thereby expose a remaining surface. The remaining surface has an average surface roughness of less than about 10 nm. A system for etching a conductive layer is also disclosed.
摘要翻译：蚀刻导电层的方法包括转换导电层的至少一部分并蚀刻导电层，以基本上去除导电层的转换部分，从而暴露出剩余的表面。剩余的表面具有小于约10nm的平均表面粗糙度。还公开了用于蚀刻导电层的系统。

4. 发明申请

WO2009114120A3 CONTROL OF BEVEL ETCH FILM PROFILE USING PLASMA EXCLUSION ZONE RINGS LARGER THAN THE WAFER DIAMETER 审中-公开
标题翻译：使用等离子体排除区域的水平线圈轮廓控制超过直径
公开(公告)号：WO2009114120A3
公开(公告)日：2009-11-12
申请号：PCT/US2009001506
申请日：2009-03-10
申请人： LAM RES CORP , FANG TONG , KIM YUNSANG , KIM KEECHAN , STOJAKOVIC GEORGE
发明人： FANG TONG , KIM YUNSANG , KIM KEECHAN , STOJAKOVIC GEORGE
IPC分类号： H01L21/3065 , H01L21/302
CPC分类号： H01L21/67028 , H01J37/32642 , H01L21/02087 , H01L21/3065
摘要： A method of cleaning a bevel edge of a semiconductor substrate is provided. A semiconductor substrate is placed on a substrate support in a reaction chamber of a plasma processing apparatus. The substrate has a dielectric layer overlying a top surface and a bevel edge of the substrate, the layer extending above and below an apex of the bevel edge. A process gas is introduced into the reaction chamber and energized into a plasma. The bevel edge is cleaned with the plasma so as to remove the layer below the apex without removing all of the layer above the apex.
摘要翻译：提供一种清洁半导体衬底的斜边缘的方法。将半导体衬底放置在等离子体处理设备的反应室中的衬底支撑件上。衬底具有覆盖衬底的顶表面和斜面边缘的介电层，该层在斜面边缘的顶点的上方和下方延伸。将工艺气体引入反应室并通电为等离子体。斜面边缘用等离子体清洁，以便除去顶点以下的层，而不会移除顶点上方的所有层。

5. 发明申请

WO2008082923A3 METHODS AND APPARATUS FOR WAFER EDGE PROCESSING 审中-公开
标题翻译： WAFER边缘加工的方法和装置
公开(公告)号：WO2008082923A3
公开(公告)日：2008-11-27
申请号：PCT/US2007087673
申请日：2007-12-14
申请人： LAM RES CORP , KIM YUNSANG , CHEN JACK , FANG TONG , BAILEY III ANDREW
发明人： KIM YUNSANG , CHEN JACK , FANG TONG , BAILEY III ANDREW
IPC分类号： H01L21/461
CPC分类号： H01J37/32706 , H01J37/32532 , H01J37/32623 , H01L21/02087 , H01L21/0209 , H01L21/67069
摘要： Methods and apparatus for remedying arc-related damage to the substrate during plasma bevel etching. A plasma shield is disposed above the substrate to prevent plasma, which is generated in between two annular grounded plates, from reaching the exposed metallization on the substrate. Additionally or alternatively, a carbon-free fluorinated process source gas may be employed and/or the RF bias power may be ramped up gradually during plasma generation to alleviate arc-related damage during bevel etching. Also additionally or alternatively, helium and/or hydrogen may be added to the process source gas to alleviate arc-related damage during bevel etching.
摘要翻译：在等离子体斜面蚀刻期间用于补救对基板的电弧相关损伤的方法和装置。等离子体屏蔽设置在衬底之上，以防止在两个环形接地板之间产生的等离子体到达衬底上暴露的金属化。另外或替代地，可以采用无碳氟化处理源气体和/或在等离子体产生期间逐渐斜升RF偏置功率，以减轻斜面蚀刻期间的电弧相关损伤。另外或替代地，可以将氦和/或氢加入到工艺源气体中以减轻斜面蚀刻期间的电弧相关损伤。

6. 发明申请

WO2007038514A2 APPARATUS FOR THE REMOVAL OF A SET OF BYPRODUCTS FROM A SUBSTRATE EDGE AND METHODS THEREFOR 审中-公开
标题翻译：从基板边缘去除一组副产品的装置及其方法
公开(公告)号：WO2007038514A2
公开(公告)日：2007-04-05
申请号：PCT/US2006037492
申请日：2006-09-26
申请人： LAM RES CORP , KIM YUNSANG , BAILEY III ANDREW D , YOON HYUNGSUK ALEXANDER
发明人： KIM YUNSANG , BAILEY III ANDREW D , YOON HYUNGSUK ALEXANDER
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/02087 , H01J37/321 , H01J37/32623
摘要： A plasma processing system including a plasma chamber for processing a substrate is disclosed. The apparatus includes a chuck configured for supporting a first surface of the substrate. The apparatus also includes a plasma resistant barrier disposed in a spaced-apart relationship with respect to a second surface of the substrate, the second surface being opposite the first surface, the plasma resistant barrier substantially shielding a center portion of the substrate and leaving an annular periphery area of the second surface of the substrate substantially unshielded by the plasma resistant barrier. The apparatus further includes at least one powered electrode, the powered electrode operating cooperatively with the plasma resistant barrier to generate confined plasma from a plasma gas, the confined plasma being substantially confined to the annular periphery portion of the substrate and away from the center portion of the substrate.
摘要翻译：公开了一种包括用于处理衬底的等离子体室的等离子体处理系统。该装置包括配置用于支撑基板的第一表面的卡盘。该装置还包括等离子体阻挡屏障，其相对于衬底的第二表面以间隔开的关系设置，第二表面与第一表面相对，等离子体阻挡屏障基本上屏蔽衬底的中心部分并留下环形衬底的第二表面的周边区域基本上不受等离子体阻挡屏障的屏蔽。所述设备还包括至少一个动力电极，所述动力电极与所述等离子体阻挡屏障协同工作以从等离子体气体产生约束等离子体，所述受限等离子体基本上限制在所述衬底的所述环形周边部分并且远离所述衬底的中心部分底物。

7. 发明申请

WO2006031452A3 APPARATUS FOR THE OPTIMIZATION OF ATMOSPHERIC PLASMA IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：用于优化等离子体处理系统中大气等离子体的装置
公开(公告)号：WO2006031452A3
公开(公告)日：2007-03-01
申请号：PCT/US2005031105
申请日：2005-08-31
申请人： LAM RES CORP , KIM YUNSANG , KUTHI ANDRAS
发明人： KIM YUNSANG , KUTHI ANDRAS
IPC分类号： C23C16/50 , C23C16/452 , C23C16/503 , C23C16/505 , C23C16/509 , C23C16/52 , C23F1/00 , H01L21/306
CPC分类号： H01L21/02071 , H01L21/02046 , H01L21/31116 , H05H1/2406 , H05H2001/2412 , H05H2001/2437
摘要： An apparatus for cleaning a substrate in a reactive ion etch process is disclosed. The apparatus is configured to produce an atmospheric plasma using a RF generation device. The apparatus includes a plasma forming chamber including a cavity defined by a set of interior chamber walls comprised of a dielectric material. The apparatus also includes an atmospheric plasma generated by the RF generation device, the atmospheric plasma protruding from a first end of the cavity to clean the substrate.
摘要翻译：公开了一种用于在反应离子蚀刻工艺中清洁衬底的设备。该装置被配置为使用RF产生装置产生大气等离子体。该装置包括等离子体形成室，其包括由一组由电介质材料组成的内部室壁限定的空腔。该装置还包括由RF产生装置产生的大气等离子体，大气等离子体从空腔的第一端突出以清洁衬底。

8. 发明申请

WO2009097089A3 GAS MODULATION TO CONTROL EDGE EXCLUSION IN A BEVEL EDGE ETCHING PLASMA CHAMBER 审中-公开
标题翻译：气体调节控制边缘蚀刻等离子体室的边缘排除
公开(公告)号：WO2009097089A3
公开(公告)日：2009-09-24
申请号：PCT/US2009000372
申请日：2009-01-16
申请人： LAM RES CORP , FANG TONY , KIM YUNSANG , BAILEY ANDREW D , RIGOUTAT OLIVIER
发明人： FANG TONY , KIM YUNSANG , BAILEY ANDREW D , RIGOUTAT OLIVIER
IPC分类号： H01L21/3065
CPC分类号： H01J37/32449 , H01J37/32091 , H01J2237/3341 , H01L21/02087
摘要： The various embodiments provide apparatus and methods of removal of unwanted deposits near the bevel edge of substrates to improve process yield. The embodiments provide apparatus and methods with center and edge gas feeds as additional process knobs for selecting a most suitable bevel edge etching processes to push the edge exclusion zone further outward towards the edge of substrates. Further the embodiments provide apparatus and methods with tuning gas(es) to change the etching profile at the bevel edge and using a combination of center and edge gas feeds to flow process and tuning gases into the chamber. Both the usage of tuning gas and location of gas feed(s) affect the etching characteristics at bevel edge. Total gas flow, gap distance between the gas delivery plate and substrate surface, pressure, and types of process gas(es) are also found to affect bevel edge etching profiles.
摘要翻译：各种实施例提供了在基板的斜边缘附近去除不需要的沉积物以提高工艺产量的装置和方法。这些实施例提供了具有中心和边缘气体进料作为附加过程旋钮的设备和方法，用于选择最合适的斜面边缘蚀刻工艺，以将边缘排除区域进一步朝向衬底边缘向外推动。此外，实施例提供了具有调节气体以改变斜面边缘处的蚀刻轮廓的装置和方法，并且使用中心和边缘气体进料的组合来流动过程并将气体调谐到腔室中。调节气体的使用和气体进料的位置都会影响斜边处的蚀刻特性。总气体流量，气体输送板和基底表面之间的间隙距离，压力和工艺气体的类型也被发现影响斜面边缘蚀刻轮廓。

9. 发明申请

WO2012054577A3 METHODS FOR DEPOSITING BEVEL PROTECTIVE FILM 审中-公开
标题翻译：沉积水保护膜的方法
公开(公告)号：WO2012054577A3
公开(公告)日：2013-10-24
申请号：PCT/US2011056849
申请日：2011-10-19
申请人： LAM RES CORP , SHIN NEUNGHO , CHUNG PATRICK , KIM YUNSANG
发明人： SHIN NEUNGHO , CHUNG PATRICK , KIM YUNSANG
IPC分类号： C23C16/50
CPC分类号： H01L21/67069 , H01J37/32366 , H01J37/32376 , H01J37/32568 , H01L21/2007 , H01L21/30625 , H01L21/3083 , H01L21/67017
摘要： A method of film deposition using localized plasma to protect bevel edge of a wafer in a plasma chamber. The method includes adjusting an electrode gap between a movable electrode and a stationary electrode, the wafer being disposed on one of the movable electrode and the stationary electrode, to a gap distance configured to prevent plasma formation over a center portion of the wafer, the gap distance also dimensioned such that a plasma-sustainable condition around the bevel edge of the wafer is formed after the adjusting. The method also includes flowing deposition gas into the plasma chamber. The method includes maintaining, using a heater, a chuck temperature that is configured to facilitate film deposition on the bevel edge. The method further includes generating the localized plasma from the deposition gas for depositing a film on the bevel edge.
摘要翻译：使用局部等离子体的膜沉积方法来保护等离子体室中的晶片的斜边缘。该方法包括调整可动电极和固定电极之间的电极间隙，将晶片设置在可动电极和固定电极中的一个上，形成为防止等离子体在晶片的中心部分形成的间隙距离，间隙距离也被确定为使得在调整之后形成围绕晶片的斜边缘的等离子体可持续状态。该方法还包括将沉积气体流入等离子体室。该方法包括使用加热器维持配置成有助于膜倾斜边缘上的膜沉积的卡盘温度。该方法还包括从沉积气体产生局部等离子体，以便在斜面边缘上沉积薄膜。

10. 发明申请

WO2011084337A3 METHOD AND APPARATUS FOR PROCESSING BEVEL EDGE 审中-公开
标题翻译：处理边缘的方法和设备
公开(公告)号：WO2011084337A3
公开(公告)日：2011-09-09
申请号：PCT/US2010059585
申请日：2010-12-08
申请人： LAM RES CORP , CHEN JACK , KIM YUNSANG
发明人： CHEN JACK , KIM YUNSANG
IPC分类号： H01L21/3065
CPC分类号： H01L21/02274 , C23C16/0245 , C23C16/04 , C23C16/509 , H01L21/02087 , H01L21/02115 , H01L21/3083 , H01L21/31144
摘要： A method and apparatus for processing a bevel edge is provided. A substrate is placed in a bevel processing chamber and a passivation layer is formed on the substrate only around a bevel region of the substrate using a passivation plasma confined in a peripheral region of the bevel processing chamber. The substrate may undergo a subsequent semiconductor process, during which the bevel edge region of the substrate is protected by the passivation layer. Alternatively, the passivation layer may be patterned using a patterning plasma formed in an outer peripheral region of the processing chamber, the patterning plasma being confined by increasing plasma confinement. The passivation layer on outer edge portion of the bevel region is removed, while the passivation layer on an inner portion of the bevel region is maintained. The bevel edge of the substrate may be cleaned using the patterned passivation layer as a protective mask.
摘要翻译：提供了一种用于处理斜面边缘的方法和装置。将衬底放置在斜角加工室中，并且使用限制在斜角加工室的外围区域中的钝化等离子体仅在衬底的斜面区域周围在衬底上形成钝化层。衬底可以经历随后的半导体工艺，在此期间衬底的斜面边缘区域被钝化层保护。可选地，钝化层可以使用在处理室的外围区域中形成的图案化等离子体来图案化，图案化等离子体通过增加等离子体约束而被限制。在斜角区域的外边缘部分上的钝化层被去除，而在斜角区域的内部上的钝化层被保持。可以使用图案化的钝化层作为保护掩模来清洁衬底的斜面边缘。

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