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1. 发明申请

WO2014060916A1 INTEGRATED CIRCUIT WITH SENSING TRANSISTOR ARRAY, SENSING APPARATUS AND MEASURING METHOD 审中-公开
标题翻译：带感应晶体管阵列的集成电路，感应装置和测量方法
公开(公告)号：WO2014060916A1
公开(公告)日：2014-04-24
申请号：PCT/IB2013/059296
申请日：2013-10-11
申请人： KONINKLIJKE PHILIPS N.V.
发明人： KLOOTWIJK, Johan Hendrik , MESCHER, Marleen , DE GRAAF, Pascal , MARCELIS, Bout
IPC分类号： G01N27/414
CPC分类号： G01N27/4148 , G01N27/4141 , G01N27/4145 , G01N27/4146 , H01L29/0673 , H01L29/1033 , H01L29/16
摘要： Integrated circuit (100) sensor array, comprising a semiconductor substrate (110); an insulating layer (120) over said substrate; an first transistor (140a) on said insulating layer, the first transistor comprising an exposed functionalized channel region (146a) in between a source region (142a) and a drain region (144) for sensing an analyte in a medium; a second transistor (140b) on said insulating layer, the second transistor comprising an exposed channel region (146b) in between a source region (142b) and a drain region (144) for sensing a potential of said medium; and a voltage bias generator (150) conductively coupled to the semiconductor substrate for providing said transistors with a bias voltage, said voltage bias generator being responsive to the second transistor. A sensing apparatus comprising such an IC and an analyte measurement method using such an IC are also disclosed.
摘要翻译：集成电路（100）传感器阵列，包括半导体衬底（110）; 在所述衬底上的绝缘层（120）; 在所述绝缘层上的第一晶体管（140a），所述第一晶体管包括用于感测介质中的分析物的源区（142a）和漏区（144）之间的暴露的功能化沟道区（146a）在所述绝缘层上的第二晶体管（140b），所述第二晶体管包括用于感测所述介质的电位的源极区（142b）和漏极区（144）之间的暴露沟道区（146b）以及导电耦合到半导体衬底的电压偏置发生器（150），用于向所述晶体管提供偏置电压，所述电压偏置发生器响应于第二晶体管。还公开了一种包括这种IC的感测装置和使用这种IC的分析物测量方法。

2. 发明申请

WO2014177408A1 METHOD OF MANUFACTURING A PARTIALLY FREESTANDING TWO-DIMENSIONAL CRYSTAL FILM AND DEVICE COMPRISING SUCH A FILM 审中-公开
标题翻译：制造部分自动二维晶体薄膜的方法和包含这种薄膜的装置
公开(公告)号：WO2014177408A1
公开(公告)日：2014-11-06
申请号：PCT/EP2014/058034
申请日：2014-04-21
申请人： KONINKLIJKE PHILIPS N.V.
发明人： ASADI, Kamal , KLOOTWIJK, Johan Hendrik
IPC分类号： B01D67/00 , B01D69/12 , B01D71/02
CPC分类号： B01D69/12 , B01D67/0044 , B01D67/0062 , B01D67/0067 , B01D71/02 , B01D71/021 , B01D71/028
摘要： Disclosed is a method of manufacturing a partially freestanding two-dimensional crystal film (16, 16'), the method comprising providing a substrate (10) carrying a catalyst layer (14) for forming the two-dimensional crystal layer on a first surface; forming the two-dimensional crystal film on the catalyst layer; covering at least the two-dimensional crystal film with a protective layer (18); etching a cavity (24) in a second surface of the substrate, the second surface being opposite to the first surface, said cavity terminating on the catalyst layer; etching the exposed part of the catalyst layer from the cavity; and removing the protective layer, thereby obtaining a two-dimensional crystal film that is freestanding over said cavity. A device manufactured in this manner is also disclosed.
摘要翻译：公开了一种制造部分独立的二维晶体膜（16,16'）的方法，所述方法包括提供在第一表面上承载用于形成二维晶体层的催化剂层（14）的基板（10）在催化剂层上形成二维晶体膜; 至少覆盖具有保护层（18）的二维晶体膜; 蚀刻所述基板的第二表面中的空腔（24），所述第二表面与所述第一表面相对，所述空腔终止于所述催化剂层上; 从空腔中蚀刻催化剂层的暴露部分; 并去除保护层，从而获得独立于所述空腔的二维晶体膜。也公开了以这种方式制造的装置。

3. 发明申请

WO2021228729A1 AN ULTRASOUND TRANSDUCER AND A TILED ARRAY OF ULTRASOUND TRANSDUCERS 审中-公开
公开(公告)号：WO2021228729A1
公开(公告)日：2021-11-18
申请号：PCT/EP2021/062243
申请日：2021-05-08
申请人： KONINKLIJKE PHILIPS N.V.
发明人： HENNEKEN, Vincent Adrianus , VAN RENS, Antonia Cornelia , KLOOTWIJK, Johan Hendrik
IPC分类号： B06B1/02 , A61B8/00
摘要： An ultrasound transducer has a control circuit with an array of circuit portions, the used ones of which defining a circuit area. cMUT elements are provided over the top of the control circuit. Vias provide a coupling between each cMUT element and a respective one of the circuit portions beneath. At least some vias are located beneath the bottom electrode of the cMUT element and each via connects to the respective circuit portion at a same position relative to the circuit portion. The array of cMUT elements overlaps at least one side of the circuit area. The fixed via position makes the circuit design simpler, and the overlap enables tiling or else enables a modular design in which different cMUT designs may be used with the same circuit.

4. 发明申请

WO2014087290A1 PHOTON COUNTING X-RAY DETECTOR 审中-公开
标题翻译：光电计数X射线探测器
公开(公告)号：WO2014087290A1
公开(公告)日：2014-06-12
申请号：PCT/IB2013/060267
申请日：2013-11-20
申请人： KONINKLIJKE PHILIPS N.V.
发明人： NELLISSEN, Antonius Johannes Maria , VERBAKEL, Frank , KLOOTWIJK, Johan Hendrik , WIECZOREK, Herfried Karl
IPC分类号： G01T1/24
CPC分类号： G01T1/241 , G01T1/18 , G01T1/24 , G01T1/247 , G01T1/366
摘要： The present invention relates to a photon counting X-ray detector and detection method that effectively suppress polarization even under high flux conditions. The proposed detector comprises a photon counting semiconductor element (10) for generating electron-hole pairs in response to incident X-ray photons,a cathode electrode (11a, 11b; 21a, 21b; 31a, 31b, 31c, 31ac, 31d; 41a, 41b; 51a, 51b) arranged on a first side (10a) of said semiconductor element (10) facing incited X-ray radiation, said cathode electrode comprising two interdigitated cathode elements (11a, 11b; 21a, 21b; 31a, 31b, 31c, 31ac, 31d; 41a, 41b; 1a, 51b), a pixelated anode electrode (12) arranged on a second side (10b) of said semiconductor element (10) opposite said first side (10a), a power source (13) for applying a bias voltage between said cathode electrode and said anode electrode and for temporarily applying an injection voltage between said cathode elements (11a, 11b; 21a, 21b; 31a, 31b, 31c, 31ac, 31d; 41a, 41b; 51a, 51b), and a readout unit (14) for reading out electrical signals from said pixelated anode electrode (12).
摘要翻译：本发明涉及即使在高通量条件下也能有效地抑制极化的光子计数X射线检测器和检测方法。所提出的检测器包括：用于响应于入射的X射线光子产生电子 - 空穴对的光子计数半导体元件（10），阴极电极（11a，11b; 21a，21b; 31a，31b，31c，31ac，31d; 41a ，41b; 51a，51b），所述阴极包括两个交叉指示的阴极元件（11a，11b; 21a，21b; 31a，31b， 31c，31ac，31d; 41a，41b; 1a，51b），布置在所述半导体元件（10）的与所述第一侧（10a）相对的第二侧（10b）上的像素化阳极电极（12）），用于在所述阴极电极和所述阳极电极之间施加偏置电压，并且在所述阴极元件（11a，11b; 21a，21b; 31a，31b，31c，31ac，31d; 41a，41b; 51a， 51b）和用于从所述像素化阳极电极（12）读出电信号的读出单元（14）。

5. 发明申请

WO2014080310A2 CAPACITIVE MICRO-MACHINED TRANSDUCER AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：电容式微加工传感器及其制造方法
公开(公告)号：WO2014080310A2
公开(公告)日：2014-05-30
申请号：PCT/IB2013/059932
申请日：2013-11-06
申请人： KONINKLIJKE PHILIPS N.V.
发明人： KLOOTWIJK, Johan Hendrik , MULDER, Marcel , DE WILD, Nico Maris Adriaan , KARAKAYA, Koray , VAN DEN HEUVEL, Cornelius Antonius
IPC分类号： B60B1/02
CPC分类号： G10K11/18 , B06B1/0292 , C23C16/45525 , C23C16/56
摘要： The present invention relates to a method of manufacturing a capacitive micro- machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), depositing a second electrode layer (50) on the second dielectric film (40), and patterning at least one of the deposited layers and films (10, 20, 30, 40, 50), wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.
摘要翻译：本发明涉及一种制造电容微机械加工换能器（100），尤其是CMUT的方法，该方法包括：在基板（1）上沉积第一电极层（10）在第一电极层（10）上沉积第一介电膜（20），在第一介电膜（20）上沉积牺牲层（30），牺牲层（30）可移除以形成在牺牲层（30）上沉积第二电介质膜（40），在第二电介质膜（40）上沉积第二电极层（50），以及图案化沉积的层和膜（10,20）中的至少一个，30,40,50），其中沉积步骤通过原子层沉积来执行。本发明还涉及一种通过这种方法制造的电容式微机械加工换能器（100），特别是CMUT。

6. 发明申请

WO2013111063A1 CAPACITIVE MICRO-MACHINED TRANSDUCER AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：电容式微机械传动器及其制造方法
公开(公告)号：WO2013111063A1
公开(公告)日：2013-08-01
申请号：PCT/IB2013/050572
申请日：2013-01-23
申请人： KONINKLIJKE PHILIPS N.V.
发明人： DIRKSEN, Peter , MAUCZOK, Ruediger , KARAKAYA, Koray , KLOOTWIJK, Johan Hendrik , MARCELIS, Bout , MULDER, Marcel
IPC分类号： B06B1/02
CPC分类号： B81B3/0086 , B06B1/0292 , B81B3/0027 , B81B2201/0271 , B81C1/00523 , H04R19/005 , H04R31/00 , H04R31/003
摘要： The present invention relates to a method of manufacturing a capacitive micro- machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), depositing a second electrode layer (50) on the second dielectric film (40), and patterning at least one of the deposited layers and films (10, 20, 30, 40, 50), wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.
摘要翻译：本发明涉及一种制造电容式微机械传感器（100），特别是CMUT的方法，该方法包括在基片（1）上沉积第一电极层（10），沉积第一介电膜（20）在所述第一电极层（10）上，在所述第一介电膜（20）上沉积牺牲层（30），所述牺牲层（30）可去除以形成所述换能器的空腔（35），沉积第二电介质膜在所述牺牲层（30）上，在所述第二电介质膜（40）上沉积第二电极层（50），并且对所述沉积层和膜（10,20,30,40,50）中的至少一个进行构图，其中沉积步骤通过原子层沉积进行。本发明还涉及通过这种方法制造的电容式微加工的换能器（100），特别是CMUT。

7. 发明申请

WO2013111040A1 CAPACITIVE MICRO-MACHINED TRANSDUCER AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：电容式微机械传动器及其制造方法
公开(公告)号：WO2013111040A1
公开(公告)日：2013-08-01
申请号：PCT/IB2013/050481
申请日：2013-01-18
申请人： KONINKLIJKE PHILIPS N.V.
发明人： DIRKSEN, Peter , MAUCZOK, Ruediger , KARAKAYA, Koray , KLOOTWIJK, Johan Hendrik , MARCELIS, Bout , MULDER, Marcel
IPC分类号： B06B1/02
CPC分类号： H02N1/006 , B06B1/0292 , B81B3/00 , B81B2203/0127 , B81C1/00158 , B81C1/00373 , H02N1/08
摘要： The present invention relates to a method of manufacturing a capacitive micro- machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), and depositing a second electrode layer (50) on the second dielectric film (40), wherein the first dielectric film (20) and/or the second dielectric film (40) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.
摘要翻译：本发明涉及一种制造电容式微机械传感器（100），特别是CMUT的方法，该方法包括在基片（1）上沉积第一电极层（10），沉积第一介电膜（20）在所述第一电极层（10）上，在所述第一介电膜（20）上沉积牺牲层（30），所述牺牲层（30）可去除以形成所述换能器的空腔（35），沉积第二电介质膜 40），并且在所述第二电介质膜（40）上沉积第二电极层（50），其中所述第一电介质膜（20）和/或所述第二电介质膜（40）包括第一层包括氧化物，包含高k材料的第二层和包含氧化物的第三层，并且其中所述沉积步骤通过原子层沉积进行。本发明还涉及通过这种方法制造的电容式微加工的换能器（100），特别是CMUT。

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