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1. 发明申请

WO2010007560A2 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD 审中-公开
标题翻译：半导体器件和制造方法
公开(公告)号：WO2010007560A2
公开(公告)日：2010-01-21
申请号：PCT/IB2009/052982
申请日：2009-07-09
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , KLOOTWIJK, Johan, H. , TIMMERING, Eugene
发明人： KLOOTWIJK, Johan, H. , TIMMERING, Eugene
CPC分类号： H01L23/293 , H01L23/3171 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a device (10) comprising a substrate (12) having a front surface (14) and a back surface (24); a semiconductor element (16) provided on the front surface of the substrate; a first passivation layer (18); and a second passivation layer (22) provided on the back surface of the substrate. The present invention also relates to a method of manufacturing such a device.
摘要翻译：本发明涉及一种包括具有前表面（14）和后表面（24）的衬底（12）的装置（10）;其中，设置在基板的前表面上的半导体元件（16）第一钝化层（18）; 和设置在衬底背面上的第二钝化层（22）。本发明还涉及制造这种装置的方法。

2. 发明申请

WO2010032156A3 CAPACITIVE MICROMACHINED ULTRASOUND TRANSDUCER 审中-公开
公开(公告)号：WO2010032156A3
公开(公告)日：2010-03-25
申请号：PCT/IB2009/053914
申请日：2009-09-08
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , KLOOTWIJK, Johan, H. , DIRKSEN, Peter , MULDER, Marcel , MOONEN, Elisabeth, M. L.
发明人： KLOOTWIJK, Johan, H. , DIRKSEN, Peter , MULDER, Marcel , MOONEN, Elisabeth, M. L.
IPC分类号： B06B1/02
摘要： The patent application discloses a capacitive micromachined ultrasound transducer, comprising a silicon substrate; a cavity; a first electrode, which is arranged between the silicon substrate and the cavity; wherein the first electrode is arranged under the cavity; a membrane, wherein the membrane is arranged above the cavity and opposite to the first electrode; a second electrode, wherein the second electrode is arranged above the cavity and opposite to the first electrode; wherein the second electrode is arranged in or close to the membrane, wherein the first electrode and the second electrode are adapted to be supplied by a voltage; and a first isolation layer, which is arranged between the first electrode and the second electrode, wherein the first isolation layer comprises a dielectric. It is also described a system for generating or detecting ultrasound waves, wherein the system comprises a transducer according to the patent application. Further, it is disclosed a method for manufacturing a transducer according to the patent application, wherein the transducer is manufactured with the help of a CMOS manufacturing process,wherein the transducer can be manufactured as a post-processing feature during a CMOS process.

3. 发明申请

WO2005109636A1 ELECTRONIC DEVICE 审中-公开
标题翻译：电子设备
公开(公告)号：WO2005109636A1
公开(公告)日：2005-11-17
申请号：PCT/IB2005/051433
申请日：2005-05-03
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , DEN DEKKER, Arnoldus , DIJKHUIS, Johannes, F. , PULSFORD, Nicolas, J. , VAN BEEK, Jozef, T., M. , ROOZEBOOM, Freddy , KEMMEREN, Antonius, L., A., M. , KLOOTWIJK, Johan, H. , NOLLEN, Maarten, D-J.
发明人： DEN DEKKER, Arnoldus , DIJKHUIS, Johannes, F. , PULSFORD, Nicolas, J. , VAN BEEK, Jozef, T., M. , ROOZEBOOM, Freddy , KEMMEREN, Antonius, L., A., M. , KLOOTWIJK, Johan, H. , NOLLEN, Maarten, D-J.
IPC分类号： H03H3/00
CPC分类号： H03H3/00 , H03H7/0123
摘要： The electronic device comprises a network of at least one thin-film capacitor and at least one inductor on a first side of a substrate of a semiconductor material. The substrate has a resistivity sufficiently high to limit electrical losses of the inductor and being provided with an electrically insulating surface layer on its first side. A first and a second lateral pin diode are defined in the substrate, each of the pin diodes having a doped p-region, a doped n-region and an intermediate intrinsic region. The intrinsic region of the first pin diode is larger than that of the second pin diode.
摘要翻译：电子器件包括至少一个薄膜电容器的网络和半导体材料的衬底的第一侧上的至少一个电感器。衬底的电阻率足够高以限制电感器的电损耗并且在其第一侧上设置有电绝缘表面层。在衬底中限定第一和第二横向pin二极管，每个pin二极管具有掺杂的p区，掺杂的n区和中间固有区。第一pin二极管的本征区域大于第二pin二极管的本征区域。

4. 发明申请

WO2005064664A1 SEMICONDUCTOR DEVICE COMPRISING A HETEROJUNCTION 审中-公开
标题翻译：包含异常的半导体器件
公开(公告)号：WO2005064664A1
公开(公告)日：2005-07-14
申请号：PCT/IB2004/052785
申请日：2004-12-13
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , BAKKERS, Erik, P., A., M. , WOLTERS, Robertus, A., M. , KLOOTWIJK, Johan, H.
发明人： BAKKERS, Erik, P., A., M. , WOLTERS, Robertus, A., M. , KLOOTWIJK, Johan, H.
IPC分类号： H01L21/336
CPC分类号： H01L29/66742 , B82Y10/00 , H01L29/0665 , H01L29/0676 , H01L29/66136 , H01L29/78642 , H01L29/8611
摘要： A semiconductor device with a heterojunction. The device comprises a substrate and at least one nanostructure. The substrate and nanostructure is of different materials. The substrate may e.g. be of a group IV semiconductor material, whereas the nanostructure may be of a group III-V semiconductor material. The nanostructure is supported by and in epitaxial relationship with the substrate. A nanostructure may be the functional component of an electronic device such as a gate-around-transistor device. In an embodiment of a gate-around-transistor, a nanowire (51) is supported by a substrate (50), the substrate being the drain, the nanowire the current channel and a top metal contact (59) the source. A thin gate dielectric (54) is separating the nanowire and the gate electrode (55A, 55B).
摘要翻译：具有异质结的半导体器件。该装置包括基底和至少一个纳米结构。底物和纳米结构是不同的材料。衬底可以例如。是IV族半导体材料，而纳米结构可以是III-V族半导体材料。纳米结构由衬底支撑并具有与衬底的外延关系。纳米结构可以是电子器件的功能元件，例如栅极晶体管器件。在栅极晶体管的实施例中，纳米线（51）由衬底（50）支撑，衬底是漏极，纳米线电流通道和顶部金属接触（59）源极。薄栅电介质（54）分离纳米线和栅电极（55A，55B）。

5. 发明申请

WO2006056964A3 ELECTROCHEMICAL ENERGY SOURCE, ELECTRONIC MODULE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING OF SAID ENERGY SOURCE 审中-公开
公开(公告)号：WO2006056964A3
公开(公告)日：2006-06-01
申请号：PCT/IB2005/053913
申请日：2005-11-25
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , ROOZEBOOM, Freddy , NOTTEN, Peter , KEMMEREN, Antonius, L., A., M. , KLOOTWIJK, Johan, H.
发明人： ROOZEBOOM, Freddy , NOTTEN, Peter , KEMMEREN, Antonius, L., A., M. , KLOOTWIJK, Johan, H.
IPC分类号： H01M6/40
摘要： The invention relates to an electrochemical energy source comprising at least one assembly of: a first electrode, a second electrode, and an intermediate solid-state electrolyte separating said first electrode and said second electrode. The invention also relates to an electronic module provided with such an electrochemical energy source. The invention further relates to an electronic device provided with such an electrochemical energy source. Moreover, the invention relates to a method of manufacturing of such an electrochemical energy source.

6. 发明申请

WO2005083774A1 METHOD OF MAKING A SMALL SUBSTRATE COMPATIBLE FOR PROCESSING 审中-公开
标题翻译：制造小基材兼容加工的方法
公开(公告)号：WO2005083774A1
公开(公告)日：2005-09-09
申请号：PCT/IB2005/050436
申请日：2005-02-02
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , KLOOTWIJK, Johan, H. , TIMMERING, Cornelis, E. , SNIJDER, Jacob , DEKKER, Ronald , MICHIELSEN, Theodorus, M.
发明人： KLOOTWIJK, Johan, H. , TIMMERING, Cornelis, E. , SNIJDER, Jacob , DEKKER, Ronald , MICHIELSEN, Theodorus, M.
IPC分类号： H01L21/68
CPC分类号： H01L21/6835 , H01L2221/68313
摘要： A method of making a comparatively small substrate (12) compatible with manufacturing equipment for a larger-size standard substrate is disclosed. The standard substrate (1) has a surface (10) in which a depression (8) is formed, in which depression the small substrate is connected by means of a layer of a bonding material (13). The depression is formed so as to have a flat bottom (9) extending parallel to the surface. The depression has a depth such that, after the small substrate has been connected with its rear side to the bottom of the depression of the standard substrate by means of the layer of bonding material, the front side (14) of the small substrate forms a free surface which practically coincides with the surface (10) of the carrier wafer. When the standard substrate with the small substrate positioned in the depression is placed into a lithographic stepper, the free surface of the small substrate is placed automatically in a position such that patterns having very small dimensions can be projected onto a photoresist layer formed on said free surface.
摘要翻译：公开了一种制造与较大尺寸标准基板的制造设备兼容的较小基板（12）的方法。标准基板（1）具有其中形成有凹部（8）的表面（10），其中小基板通过粘合材料层（13）连接。凹陷形成为具有平行于表面延伸的平坦的底部（9）。凹陷具有这样的深度，使得在通过粘合材料层将小基板与其后侧连接到标准基板的凹陷的底部之后，小基板的正面（14）形成实际上与载体晶片的表面（10）重合的自由表面。当将具有位于凹陷中的小衬底的标准衬底放置在光刻步进器中时，小衬底的自由表面被自动放置在使得具有非常小的尺寸的图案能够投影到形成在所述自由表面。

7. 发明申请

WO2007054858A2 INTEGRATED CAPACITOR ARRANGEMENT FOR ULTRAHIGH CAPACITANCE VALUES 审中-公开
标题翻译：用于超高电容值的集成电容器布置
公开(公告)号：WO2007054858A2
公开(公告)日：2007-05-18
申请号：PCT/IB2006/054063
申请日：2006-11-02
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , ROOZEBOOM, Freddy , KLOOTWIJK, Johan, H. , KEMMEREN, Antonius, L., A., M. , REEFMAN, Derk , VERHOEVEN, Johannes, F., C., M.
发明人： ROOZEBOOM, Freddy , KLOOTWIJK, Johan, H. , KEMMEREN, Antonius, L., A., M. , REEFMAN, Derk , VERHOEVEN, Johannes, F., C., M.
CPC分类号： H01L28/91 , H01L27/0805 , H01L27/1087 , H01L29/945
摘要： The present invention relates to an electronic device (300) comprising at least one trench capacitor (302) that can also take the form of an inverse structure, a pillar capacitor. An alternating layer sequence (308) of at least two dielectric layers (312, 316) and at least two electrically conductive layers (314, 318) is provided in the trench capacitor or on the pillar capacitor, such that the at least two electrically conductive layers are electrically isolated from each other and from the substrate by respective ones of the at least two dielectric layers. A set of internal contact pads (332, 334, 340) is provided, and each internal contact pad is connected with a respective one of the electrically conductive layers or with the substrate. By providing an individual internal contact pad for each of the electrically conductive layers, a range of switching opportunities is opened up that allows tuning the specific capacitance of the capacitor to a desired value. The electronic device of the invention thus provides a flexible trench-capacitor manufacturing platform for a multitude of combinations of electrically conductive layers with each other, or, when multiple trenches are used, between electrically conductive layers of different trench capacitors. On-chip applications such as a charge-pump circuit or a DC-to-DC voltage converter are claimed that benefit from the ultra-high capacitance density and the high breakdown voltage that can be achieved with the electronic device of the invention.
摘要翻译：本发明涉及包括至少一个沟槽电容器（302）的电子器件（300），所述沟槽电容器也可以采取反转结构的形式，即柱电容器。在沟槽电容器或柱电容器中提供至少两个电介质层（312,316）和至少两个导电层（314,318）的交替层序列（308），使得至少两个导电层通过所述至少两个电介质层中的相应电介质层将所述层彼此电隔离并且与所述衬底电隔离。提供一组内部接触垫（332,334,340），并且每个内部接触垫与相应的一个导电层或与衬底连接。通过为每个导电层提供单独的内部接触垫，打开一定范围的开关机会，允许将电容器的比电容调整到期望值。因此，本发明的电子设备提供了用于导电层彼此之间的多种组合或者当使用多个沟槽时在不同沟槽电容器的导电层之间的柔性沟槽电容器制造平台。据称，诸如电荷泵电路或DC-DC电压转换器之类的片上应用受益于可用本发明的电子器件实现的超高电容密度和高击穿电压。 p>

8. 发明申请

WO2005117131A1 ELECTRIC DEVICE WITH VERTICAL COMPONENT 审中-公开
标题翻译：具有垂直组件的电气设备
公开(公告)号：WO2005117131A1
公开(公告)日：2005-12-08
申请号：PCT/IB2005/051634
申请日：2005-05-19
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , BAKKERS, Erik, P., A., M. , WOLTERS, Robertus, A., M. , KLOOTWIJK, Johan, H.
发明人： BAKKERS, Erik, P., A., M. , WOLTERS, Robertus, A., M. , KLOOTWIJK, Johan, H.
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , B82Y10/00 , B82Y30/00 , H01L27/1203 , H01L29/0676 , H01L29/66439 , H01L29/66469 , H01L29/66742 , H01L29/775 , H01L2924/0002 , H01L2924/00
摘要： A method of providing an electric device with a vertical component and the device itself are disclosed. The electric device may be a transistor device, such as a FET device, with a vertical channel, such as a gate around transistor, or double-gate transistor. First an elongate structure, such as a nanowire is provided to a substrate. Subsequently, a first conductive layer separated from the substrate and from the elongate structure by a dielectric layer is provided. Further, a second conductive layer being separated from the first conductive layer by a separation layer is being provided in contact with at least a top section of the elongate structure.
摘要翻译：公开了一种提供具有垂直分量的电子装置和装置本身的方法。电子器件可以是诸如FET器件的晶体管器件，其具有诸如晶体管周围的栅极或双栅极晶体管的垂直沟道。首先，将诸如纳米线的细长结构提供给基底。随后，提供了通过介电层从基板和细长结构分离的第一导电层。此外，通过分离层与第一导电层分离的第二导电层被提供为与细长结构的至少顶部部分接触。

9. 发明申请

WO2004068575A1 TRENCH ISOLATION STRUCTURE, SEMICONDUCTOR ASSEMBLY COMPRISING SUCH A TRENCH ISOLATION, AND METHOD FOR FORMING SUCH A TRENCH ISOLATION 审中-公开
标题翻译：铁路隔离结构，包含这种隔离隔离件的半导体组件以及形成这种隔离隔离件的方法
公开(公告)号：WO2004068575A1
公开(公告)日：2004-08-12
申请号：PCT/IB2003/006321
申请日：2003-12-16
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , KLOOTWIJK, Johan, H.
发明人： KLOOTWIJK, Johan, H.
IPC分类号： H01L21/762
CPC分类号： H01L21/76264
摘要： The present invention provides a trench isolation structure, comprising a trench groove (4) in a semiconductor slab (1) with a buried layer (2). The trench groove (4) is lined with first insulating material (5), then filled with a first filler material (6) up to the level of the buried layer. Then second insulating material (7), for example an oxide, is preferably applied in the volume which is surrounded by the buried layer (2). The remaining part of the trench groove (4) is either filled with second filler material (8) or with second insulating material.Said structure provides lower capacitive coupling between buried layer (2) edge and substrate (1), with improved thermal behavior.The invention furthermore provides a semiconductor assembly comprising said trench isolation structure and at least one semiconductor device, as well as a method for forming such a trench isolation structure.
摘要翻译：本发明提供了一种沟槽隔离结构，其包括在具有掩埋层（2）的半导体板（1）中的沟槽（4）。沟槽（4）衬有第一绝缘材料（5），然后填充到第一填充材料（6）直到掩埋层的高度。然后，第二绝缘材料（7），例如氧化物，优选地被被埋层（2）包围的体积中施加。沟槽（4）的剩余部分填充有第二填充材料（8）或第二绝缘材料。所述结构在掩埋层（2）边缘和衬底（1）之间提供较低的电容耦合，具有改进的热性能。本发明还提供一种包括所述沟槽隔离结构和至少一个半导体器件的半导体组件，以及用于形成这种沟槽隔离结构的方法。

10. 发明申请

WO2010055463A1 DEVICE FOR ADAPTABLE WAVELENGTH CONVERSION AND A SOLAR CELL 审中-公开
标题翻译：适应波长转换和太阳能电池的装置
公开(公告)号：WO2010055463A1
公开(公告)日：2010-05-20
申请号：PCT/IB2009/054981
申请日：2009-11-10
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , NIESSEN, Rogier, A., H. , PASVEER, Willem, F. , KLOOTWIJK, Johan, H.
发明人： NIESSEN, Rogier, A., H. , PASVEER, Willem, F. , KLOOTWIJK, Johan, H.
IPC分类号： G02B5/24 , H01L31/055
CPC分类号： H01L31/055 , G02B5/24 , G02B26/004 , G02F1/353 , G02F2001/13324 , H01L31/02322 , Y02E10/52
摘要： A device for adaptable wavelength conversion and a device for energy conversion are described. The device for adaptable wavelength conversion comprises at least one layer comprising a wavelength converting material and arranged to receive and re-emit a light beam. The device is further arranged to manipulate the at least one layer to operate in a closed state, in which a surface of the at least one layer is substantially covered with the wavelength converting material and to operate in an open state, in which the surface of the at least one layer is substantially uncovered with the wavelength converting material. The device for adaptable wavelength conversion can be applied in combination with a solar cell or photovoltaic cell thereby enabling the solar cell to receive radiation having a suitable spectrum under varying lighting conditions.
摘要翻译：描述了用于适应性波长转换的装置和用于能量转换的装置。用于适应性波长转换的装置包括至少一层包括波长转换材料并被布置成接收和重新发射光束的层。该装置进一步布置成操纵该至少一层以在封闭状态下操作，其中该至少一层的表面基本上被波长转换材料覆盖并且处于打开状态，其中，所述至少一层基本上不被所述波长转换材料覆盖。用于适应性波长转换的装置可以与太阳能电池或光伏电池组合应用，从而使太阳能电池能够在变化的照明条件下接收具有合适光谱的辐射。

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