会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 9. 发明申请
    • ULTRASOUND TRANSDUCER DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 超声波传感器装置及其制造方法
    • WO2013093728A1
    • 2013-06-27
    • PCT/IB2012/057273
    • 2012-12-13
    • KONINKLIJKE PHILIPS ELECTRONICS N.V.
    • DEKKER, RonaldMARCELIS, BoutMULDER, MarcelMAUCZOK, Ruediger
    • B06B1/02
    • B06B1/0292Y10T29/49005
    • The present invention relates to an ultrasound transducer device comprising at least one cMUT cell (30) for transmitting and/or receiving ultrasound waves, the cMUT cell (30) comprising a cell membrane (30a) and a cavity (30b) underneath the cell membrane. The device further comprises a substrate (10) having a first side (10a) and a second side (10b), the at least one cMUT cell (30) arranged on the first side (10a) of the substrate (10). The substrate (10) comprises a substrate base layer (12) and a plurality of adjacent trenches (17a) extending into the substrate (10) in a direction orthogonal to the substratesides (10a, 10b), wherein spacers (12a) are each formed between adjacent trenches (17a). The substrate (10) further comprises a connecting cavity (17b) which connects the trenches (17a) and which extends in a direction parallel to the substrate sides (10a, 10b), the trenches (17a) and the connecting cavity (17b) together forming a substrate cavity (17) in the substrate (10). The substrate (10) further comprises a substrate membrane (23) covering the substrate cavity (17). The substrate cavity (17) is located in a region of the substrate (10) underneath the cMUT cell (30). The present invention further relates to a method of manufacturing such ultrasound transducer device.
    • 本发明涉及一种包括至少一个用于传送和/或接收超声波的cMUT单元(30)的超声换能器装置,所述cMUT单元(30)包括细胞膜(30a)和细胞膜下面的空腔(30b) 。 所述装置还包括具有第一侧面(10a)和第二侧面(10b)的基底(10),所述至少一个cMUT单元(30)布置在所述基底(10)的第一侧面(10a)上。 衬底(10)包括在垂直于衬底(10a,10b)的方向上延伸到衬底(10)中的衬底基底层(12)和多个相邻的沟槽(17a),其中每个形成间隔物(12a) 在相邻的沟槽(17a)之间。 衬底(10)还包括连接凹槽(17a)的连接腔(17b),并且在与基底侧面(10a,10b),沟槽(17a)和连接腔(17b)平行的方向上延伸 在衬底(10)中形成衬底腔(17)。 衬底(10)还包括覆盖衬底腔(17)的衬底膜(23)。 衬底空腔(17)位于cMUT电池(30)下方的衬底(10)的区域中。 本发明还涉及一种制造这种超声波换能器装置的方法。
    • 10. 发明申请
    • THROUGH-WAFER VIA DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 通过设备进行通过波浪形成的方法及其制造方法
    • WO2013057642A1
    • 2013-04-25
    • PCT/IB2012/055547
    • 2012-10-12
    • KONINKLIJKE PHILIPS ELECTRONICS N.V.
    • DEKKER, RonaldMARCELIS, BoutMULDER, MarcelMAUCZOK, Ruediger
    • H01L21/768H01L23/48H01L23/498
    • H01L23/5226B06B1/0292H01L21/76898H01L23/481H01L23/53271H01L2224/02372H01L2224/0401H01L2224/05548H01L2224/13024H01L2224/131H01L2224/16145H01L2924/1461H01L2924/014H01L2924/00
    • The present invention relates to a through-wafer via device (10) comprising a wafer (12) made of a wafer material and having a first wafer surface (12a) and a second wafer surface (12b) opposing the first wafer surface (12a). The through-wafer via device (10) further comprises a plurality of side by side first trenches (14) provided with a conductive material and extending from the first wafer surface (12a) into the wafer (12) such that a plurality of spacers (16) of the wafer material are formed between the first trenches (14). The through-wafer via device (10) further comprises a second trench (18) provided with the conductive material and extending from the second wafer surface (12b) into the wafer (12), the second trench (18) being connected to the first trenches (14). The through-wafer via device (10) further comprises a conductive layer (20) made of the conductive material and formed on the side of the first wafer surface (12a), the conductive material filling the first trenches (14) such that the first conductive layer (20) has a substantially planar and closed surface.
    • 本发明涉及包括由晶片材料制成并具有与第一晶片表面(12a)相对的第一晶片表面(12a)和第二晶片表面(12b)的晶片(12)的贯通晶片通孔装置(10) 。 贯通晶片通孔装置(10)还包括设置有导电材料并从第一晶片表面(12a)延伸到晶片(12)中的多个并排的第一沟槽(14),使得多个间隔件 在第一沟槽(14)之间形成晶片材料。 贯通晶片通孔装置(10)还包括设置有导电材料并从第二晶片表面(12b)延伸到晶片(12)中的第二沟槽(18),第二沟槽(18)连接到第一 沟槽(14)。 贯通晶片通孔装置(10)还包括由导电材料制成并形成在第一晶片表面(12a)侧面上的导电层(20),该导电材料填充第一沟槽(14),使得第一 导电层(20)具有基本平坦和闭合的表面。