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1. 发明申请

WO2019067009A1 MULTI-ABRASIVE SLURRY AND METHOD OF CHEMICAL MECHANICAL POLISHING 审中-公开
公开(公告)号：WO2019067009A1
公开(公告)日：2019-04-04
申请号：PCT/US2018/014643
申请日：2018-01-22
申请人： INTEL CORPORATION
发明人： TREGUB, Alexander , DELBRIDGE, Kenneth A.
IPC分类号： H01L21/304 , C09G1/02 , C09K3/14 , H01L21/306
摘要： A multi-abrasive slurry, method of chemical mechanical polishing, and polishing system are disclosed. The method includes polishing an integrated circuit structure with a slurry in a first polishing stage subject to at least one variable polishing parameter, where the slurry has a carrier liquid, a first abrasive dispersed in the carrier liquid, and a second abrasive dispersed in the carrier liquid. During the first polishing stage the at least one variable polishing parameter has a first value. The at least one variable polishing parameter is changed to a second value, and the integrated circuit structure is polished with the slurry in a second polishing stage consecutive with the first polishing stage with the at least one polishing parameter at the second value.

2. 发明申请

WO2018169536A1 CONDITIONING DISKS FOR CHEMICAL MECHANICAL POLISHING 审中-公开
公开(公告)号：WO2018169536A1
公开(公告)日：2018-09-20
申请号：PCT/US2017/022649
申请日：2017-03-16
申请人： INTEL CORPORATION
发明人： TREGUB, Alexander
IPC分类号： B24B37/12 , B24B37/20 , B24B37/04 , B24B57/02 , H01L21/306
CPC分类号： B24B53/017 , B24B37/04 , B24B37/105 , B24B37/12 , B24B37/20 , B24B57/02
摘要： Disclosed herein are chemical mechanical polishing (CMP) conditioning disks, and related systems and techniques. For example, in some embodiments, a CMP conditioning disk may include: a support; a first pedestal extending from the support, the first pedestal having a first height; and a second pedestal extending from the support, the second pedestal having a second height different from the first height. In some embodiments, the first pedestal may have a surface roughness (SR) different from an SR of the second pedestal.

3. 发明申请

WO2017146720A1 WAFER RETAINER RINGS FOR CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：用于化学机械抛光的晶片固定环
公开(公告)号：WO2017146720A1
公开(公告)日：2017-08-31
申请号：PCT/US2016/019722
申请日：2016-02-26
申请人： INTEL CORPORATION
发明人： TREGUB, Alexander
IPC分类号： H01L21/304
CPC分类号： B24B37/32 , B24B53/017
摘要： Disclosed herein are wafer retainer rings for chemical mechanical polishing (CMP) systems. In some embodiments, a wafer retainer ring may include a top surface; a bottom surface; an inner surface; an outer surface; and a plurality of openings extending from the inner surface to the outer surface, wherein individual openings of the plurality of openings are disposed between and spaced away from the top surface and the bottom surface. During use, the top surface may contact a polishing pad, and slurry may flow through the openings to help polish a wafer retained in the wafer retainer ring.
摘要翻译：这里公开了用于化学机械抛光（CMP）系统的晶片保持环。在一些实施例中，晶片固定环可以包括顶面; 底面; 内表面; 外表面; 以及从所述内表面延伸到所述外表面的多个开口，其中所述多个开口中的各个开口设置在所述顶表面和所述底表面之间并且与所述顶表面和所述底表面间隔开。在使用期间，顶面可以接触抛光垫，并且浆料可以流过开口以帮助抛光保留在晶片固定环中的晶片。

4. 发明申请

WO2017146677A1 CONDITIONING DISKS FOR CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光用空调盘
公开(公告)号：WO2017146677A1
公开(公告)日：2017-08-31
申请号：PCT/US2016/019005
申请日：2016-02-23
申请人： INTEL CORPORATION
发明人： TREGUB, Alexander , O'FARRELL, Denis J.
IPC分类号： H01L21/304
CPC分类号： B24B53/00
摘要： Disclosed herein are chemical mechanical polishing (CMP) conditioning disks, and related systems and techniques. For example, in some embodiments, a CMP conditioning disk may include: a support; a first pedestal extending from the support, the first pedestal having a first surface roughness (SR); and a second pedestal extending from the support, the second pedestal having a second SR different from the first SR.
摘要翻译：本文公开了化学机械抛光（CMP）调节盘，以及相关的系统和技术。例如，在一些实施例中，CMP修整盘可以包括：支撑件; 第一基座，其从所述支撑件延伸，所述第一基座具有第一表面粗糙度（SR）;第二基座，以及从支撑件延伸的第二基座，第二基座具有与第一SR不同的第二SR。

5. 发明申请

WO2019139586A1 MAGNETIC POLISHING PAD AND PLATEN STRUCTURES FOR CHEMICAL MECHANICAL POLISHING 审中-公开
公开(公告)号：WO2019139586A1
公开(公告)日：2019-07-18
申请号：PCT/US2018/013252
申请日：2018-01-11
申请人： INTEL CORPORATION
发明人： TREGUB, Alexander
IPC分类号： B24B37/24 , B24B37/14 , H01L21/306
摘要： Disclosed herein are chemical mechanical polishing (CMP) polishing pad and platen structures, and related systems and techniques. For example, in some embodiments, a CMP conditioning system may include a CMP polishing pad structure and a CMP platen structure, wherein the CMP polishing pad structure is magnetically coupled to the CMP platen structure.

6. 发明申请

WO2018118047A1 CONDITIONING DISKS TO CONDITION SEMICONDUCTOR WAFER POLISHING PADS 审中-公开
公开(公告)号：WO2018118047A1
公开(公告)日：2018-06-28
申请号：PCT/US2016/068054
申请日：2016-12-21
申请人： INTEL CORPORATION
发明人： TREGUB, Alexander , DELBRIDGE, Ken A.
IPC分类号： H01L21/304 , H01L21/306 , H01L21/321
CPC分类号： B24B53/017 , B24B37/105
摘要： Conditioning disks to condition semiconductor wafer polishing pads are disclosed. An example chemical mechanical planarization conditioning disk includes a substrate and a nodule projecting a first height from the substrate. The conditioning disk further includes a protective structure projecting from the substrate. The protective structure is adjacent the nodule. The protective structure has an upper surface at a second height relative to the baseline surface. An area of the upper surface of the protective structure is greater than a top surface of the nodule.

7. 发明申请

WO2017146678A1 CONDITIONING DISKS FOR CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光用空调盘
公开(公告)号：WO2017146678A1
公开(公告)日：2017-08-31
申请号：PCT/US2016/019008
申请日：2016-02-23
申请人： INTEL CORPORATION
发明人： DELBRIDGE, Kenneth A. , MANSSON, Andrew Paul , DHILLON, Gunnmeet S. , GARLAND, John E. , TREGUB, Alexander
IPC分类号： H01L21/304
CPC分类号： B24B53/00
摘要： Disclosed herein are chemical mechanical polishing (CMP) conditioning disks, systems, and techniques. For example, in some embodiments, a CMP conditioning disk may include: a support having a surface; a projection secured to the support and extending away from the surface; and an abrasive material disposed on the surface and on the projection.
摘要翻译：这里公开了化学机械抛光（CMP）调节盘，系统和技术。例如，在一些实施例中，CMP修整盘可以包括：具有表面的支撑件; 一个固定在支架上并从表面延伸出去的突起; 以及设置在表面和投影上的研磨材料。

8. 发明申请

WO2018063242A1 CHEMICAL-MECHANICAL PLANARIZATION (CMP) PAD CONDITIONER BRUSH-AND-ABRASIVE HYBRID FOR MULTI-STEP, PREPARATION- AND RESTORATION-CONDITIONING PROCESS OF CMP PAD 审中-公开
标题翻译：化学机械平面化（CMP）垫调节器研磨和磨削混合多步骤，CMP-PAD的制备 - 和修复 - 调节过程
公开(公告)号：WO2018063242A1
公开(公告)日：2018-04-05
申请号：PCT/US2016/054427
申请日：2016-09-29
申请人： INTEL CORPORATION
发明人： TREGUB, Alexander , MOLLOY, Oisin J.
IPC分类号： B24B53/017 , B24B37/20 , B24B37/34 , B24B53/00 , B24B53/12
CPC分类号： B24B53/017 , B24B37/20 , B24B37/34 , B24B53/00 , B24B53/12 , B24D7/06 , B24D13/145
摘要： A multi-step conditioning process includes an initial step of preparation (i.e., pre-conditioning) and a subsequent step of restoration (i.e., conditioning and polishing intermittently, in situ conditioning, or combinations thereof). An example of such an enhancement is achieved using a CMP pad conditioner brush-and-abrasive hybrid that has a combination of brush bristles and abrasive elements. The abrasive elements are readily deployed for pre-conditioning as the brush bristles are pressed (flexed) so that they are not in use. And the brush bristles are readily deployed for conditioning during pad restoration as less downforce is applied to the conditioner. Thus, a universal hybrid conditioner is capable of alteration of its aggressiveness without physically changing a conditioner on a polisher tool.
摘要翻译：多步调节过程包括准备（即预调节）的初始步骤和随后的恢复步骤（即，间歇地，原位调节或其组合）的调节和抛光。使用具有刷毛和研磨元件组合的CMP垫修整器刷 - 研磨混合物可以实现这种增强的一个例子。当刷毛被挤压（弯曲）以使它们不被使用时，研磨元件容易展开用于预调节。刷子刷毛很容易在护垫修复过程中进行调节，因为调节器施加的下压力较小。因此，通用混合式调理器能够改变其侵略性，而无需在抛光工具上物理地改变调理剂。

9. 发明申请

WO2017146743A1 PAD SURFACE ROUGHNESS CHANGE METRICS FOR CHEMICAL MECHANICAL POLISHING CONDITIONING DISKS 审中-公开
标题翻译：化学机械抛光条件盘垫表面粗糙度变化指标
公开(公告)号：WO2017146743A1
公开(公告)日：2017-08-31
申请号：PCT/US2016/019985
申请日：2016-02-27
申请人： INTEL CORPORATION
发明人： TREGUB, Alexander , BRAMBLETT, Thomas R.
IPC分类号： H01L21/304
CPC分类号： B24B37/00
摘要： Disclosed herein are pad surface roughness (PSR) change metrics for chemical mechanical polishing (CMP) conditioning disks. In some embodiments, a CMP system may include control circuitry to: access a stored PSR change metric for a CMP polishing pad and a CMP conditioning disk; generate, based on the PSR change metric, a conditioning time for conditioning the CMP polishing pad with the CMP conditioning disk to achieve a target PSR for the CMP polishing pad; and generate, based on the conditioning time, a control instruction for a first arm or a second arm of the CMP system, wherein the CMP conditioning disk is coupled to the first arm, the CMP polishing pad is coupled to the second arm, and the control instruction is to cause the CMP conditioning disk to condition the CMP polishing pad for the conditioning time.
摘要翻译：这里公开了用于化学机械抛光（CMP）调节盘的垫表面粗糙度（PSR）变化度量。在一些实施例中，CMP系统可以包括控制电路以：访问用于CMP抛光垫和CMP修整盘的存储的PSR改变度量; 基于所述PSR改变度量生成用于使用所述CMP修整盘修整所述CMP抛光垫的修整时间，以实现所述CMP抛光垫的目标PSR; 并且基于所述调节时间生成用于所述CMP系统的第一臂或第二臂的控制指令，其中所述CMP修整盘耦合到所述第一臂，所述CMP抛光垫耦合到所述第二臂，并且所述CMP 控制指令是使CMP修整盘在调整时间内调整CMP抛光垫。

10. 发明申请

WO2017146719A1 WAFER RETAINER RINGS FOR CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：用于化学机械抛光的晶片固定环
公开(公告)号：WO2017146719A1
公开(公告)日：2017-08-31
申请号：PCT/US2016/019721
申请日：2016-02-26
申请人： INTEL CORPORATION
发明人： TREGUB, Alexander , JEWETT, Jason A. , MCZEEK, William L.
IPC分类号： H01L21/304
CPC分类号： B24B37/00
摘要： Disclosed herein are wafer retainer rings for chemical mechanical polishing (CMP) systems. Various ones of the wafer retainer rings disclosed herein may meet one or more criteria for limiting the wear on the wafer retainer ring during polishing. For example, in some embodiments, a wafer retainer ring may include a top surface including a plurality of ridges separated by a corresponding plurality of grooves, wherein each of the plurality of ridges has a width; a bottom surface; an inner surface circumscribing an area having a diameter; and an outer surface; wherein a ratio of the diameter to the width is less than 3.8.
摘要翻译：这里公开了用于化学机械抛光（CMP）系统的晶片保持环。本文公开的各种晶片保持环可以满足一个或多个标准，以限制抛光期间晶片保持环上的磨损。例如，在一些实施例中，晶片固定环可以包括顶表面，该顶表面包括由相应的多个凹槽分开的多个脊，其中多个脊中的每一个具有宽度; 底面; 限定具有直径的区域的内表面; 和外表面; 其中直径与宽度的比率小于3.8。

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