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1. 发明申请

WO2017146743A1 PAD SURFACE ROUGHNESS CHANGE METRICS FOR CHEMICAL MECHANICAL POLISHING CONDITIONING DISKS 审中-公开
标题翻译：化学机械抛光条件盘垫表面粗糙度变化指标
公开(公告)号：WO2017146743A1
公开(公告)日：2017-08-31
申请号：PCT/US2016/019985
申请日：2016-02-27
申请人： INTEL CORPORATION
发明人： TREGUB, Alexander , BRAMBLETT, Thomas R.
IPC分类号： H01L21/304
CPC分类号： B24B37/00
摘要： Disclosed herein are pad surface roughness (PSR) change metrics for chemical mechanical polishing (CMP) conditioning disks. In some embodiments, a CMP system may include control circuitry to: access a stored PSR change metric for a CMP polishing pad and a CMP conditioning disk; generate, based on the PSR change metric, a conditioning time for conditioning the CMP polishing pad with the CMP conditioning disk to achieve a target PSR for the CMP polishing pad; and generate, based on the conditioning time, a control instruction for a first arm or a second arm of the CMP system, wherein the CMP conditioning disk is coupled to the first arm, the CMP polishing pad is coupled to the second arm, and the control instruction is to cause the CMP conditioning disk to condition the CMP polishing pad for the conditioning time.
摘要翻译：这里公开了用于化学机械抛光（CMP）调节盘的垫表面粗糙度（PSR）变化度量。在一些实施例中，CMP系统可以包括控制电路以：访问用于CMP抛光垫和CMP修整盘的存储的PSR改变度量; 基于所述PSR改变度量生成用于使用所述CMP修整盘修整所述CMP抛光垫的修整时间，以实现所述CMP抛光垫的目标PSR; 并且基于所述调节时间生成用于所述CMP系统的第一臂或第二臂的控制指令，其中所述CMP修整盘耦合到所述第一臂，所述CMP抛光垫耦合到所述第二臂，并且所述CMP 控制指令是使CMP修整盘在调整时间内调整CMP抛光垫。

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