专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2008097330A2 ELECTRICALLY PUMPED SEMICONDUCTOR EVANESCENT LASER 审中-公开
标题翻译：电子泵半导体激光器
公开(公告)号：WO2008097330A2
公开(公告)日：2008-08-14
申请号：PCT/US2007072055
申请日：2007-06-25
申请人： INTEL CORP , UNIV CALIFORNIA , BOWERS JOHN E , COHEN ODED , FANG ALEXANDER W , JONES RICHARD , PANICCIA MARIO J , PARK HYUNDAI
发明人： BOWERS JOHN E , COHEN ODED , FANG ALEXANDER W , JONES RICHARD , PANICCIA MARIO J , PARK HYUNDAI
CPC分类号： H01S5/30 , G02B2006/12121 , H01S5/021 , H01S5/026 , H01S5/0424 , H01S5/0425 , H01S5/1032 , H01S5/125 , H01S5/141 , H01S5/2214 , H01S5/223 , H01S5/34
摘要： An apparatus and method electrically pumping a hybrid evanescent laser. For one example, an apparatus includes an optical waveguide disposed in silicon. An active semiconductor material is disposed over the optical waveguide defining an evanescent coupling interface between the optical waveguide and the active semiconductor material such that an optical mode to be guided by the optical waveguide overlaps both the optical waveguide and the active semiconductor material. A current injection path is defined through the active semiconductor material and at least partially overlapping the optical mode such that light is generated in response to electrical pumping of the active semiconductor material in response to current injection along the current injection path at least partially overlapping the optical mode.
摘要翻译：电泵浦混合渐逝激光的设备和方法。例如，一种设备包括设置在硅中的光波导。有源半导体材料设置在光波导上方，在光波导和有源半导体材料之间限定渐逝耦合界面，使得由光波导引导的光学模式与光波导和有源半导体材料两者重叠。电流注入路径被限定为穿过有源半导体材料并且至少部分地与光学模式重叠，使得响应于沿着电流注入路径的电流注入响应于有源半导体材料的电泵浦而生成光，所述电流注入路径至少部分地与光学模式。

2. 发明申请

WO2009126351A3 SILICON LASER-QUANTUM WELL INTERMIXING WAFER BONDED INTEGRATION PLATFORM 审中-公开
标题翻译：硅激光器良好的浸入式水平粘合整合平台
公开(公告)号：WO2009126351A3
公开(公告)日：2009-12-30
申请号：PCT/US2009031338
申请日：2009-01-16
申请人： UNIV CALIFORNIA , SYSAK MATTHEW N , BOWERS JOHN E , FANG ALEXANDER W , PARK HYUNDAI
发明人： SYSAK MATTHEW N , BOWERS JOHN E , FANG ALEXANDER W , PARK HYUNDAI
IPC分类号： H01L21/18 , H01S5/343
CPC分类号： H01S5/0265 , B82Y20/00 , H01S5/021 , H01S5/0215 , H01S5/0217 , H01S5/026 , H01S5/06256 , H01S5/1014 , H01S5/1032 , H01S5/1209 , H01S5/3414
摘要： Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in accordance with one or more embodiments of the present invention comprises a silicon-on-insulator substrate, comprising at least one waveguide in a top surface, and a compound semiconductor substrate comprising a gain layer, the compound semiconductor substrate being subjected to a quantum well intermixing process, wherein the upper surface of the compound semiconductor substrate is bonded to the top surface of the silicon-on-insulator substrate.
摘要翻译：公开了硅上的光子集成电路。通过将作为有源区的化合物半导体材料的晶片结合到硅并去除衬底，可以使用硅衬底上的标准光刻技术来处理激光器，放大器，调制器和其它器件。根据本发明的一个或多个实施例的硅激光器混合集成器件包括绝缘体上硅衬底，其包括顶表面中的至少一个波导，以及包括增益层的化合物半导体衬底，化合物半导体衬底进行量子阱混合处理，其中化合物半导体衬底的上表面结合到绝缘体上硅衬底的顶表面上。

3. 发明申请

WO2011081693A3 LOW NOISE, STABLE AVALANCHE PHOTODIODE 审中-公开
标题翻译：低噪音，稳定的AVALANCHE PHOTODIODE
公开(公告)号：WO2011081693A3
公开(公告)日：2011-08-25
申请号：PCT/US2010051848
申请日：2010-10-07
申请人： UNIV CALIFORNIA , BOWERS JOHN E
发明人： BOWERS JOHN E
IPC分类号： H01L31/107
CPC分类号： H01L31/1075
摘要： Quantum avalanche photodiodes are disclosed. An avalanche photodiode in accordance with one or more embodiments of the present invention comprises an absorption region having a first dopant type, a collection region, having a second dopant type, and a multiplication region, coupled between the absorption region and the collection region, wherein a distance of the multiplication region between the absorption region and the collection region is a plurality of avalanche lengths.
摘要翻译：公开了量子雪崩光电二极管。根据本发明的一个或多个实施例的雪崩光电二极管包括具有第一掺杂剂类型的吸收区域，具有第二掺杂剂类型的收集区域和耦合在吸收区域和收集区域之间的倍增区域，其中吸收区域和收集区域之间的乘法区域的距离是多个雪崩长度。

4. 发明申请

WO2013137957A3 ENHANCEMENT OF THERMOELECTRIC PROPERTIES THROUGH POLARIZATION ENGINEERING 审中-公开
标题翻译：通过极化工程提高热电性能
公开(公告)号：WO2013137957A3
公开(公告)日：2015-06-11
申请号：PCT/US2012069684
申请日：2012-12-14
申请人： UNIV CALIFORNIA , SZTEIN ALEXANDER , BOWERS JOHN E , DENBAARS STEVEN P , NAKAMURA SHUJI
发明人： SZTEIN ALEXANDER , BOWERS JOHN E , DENBAARS STEVEN P , NAKAMURA SHUJI
IPC分类号： H01L21/8252
CPC分类号： H01L35/22 , C30B23/066 , C30B25/02 , H01L35/26 , H01L35/34
摘要： A method for enhancement of thermoelectric properties through polarization engineering. Internal electric fields created within a material are used to spatially confine electrons for the purpose of enhancing thermoelectric properties. Electric fields can be induced within a material by the presence of bound charges at interfaces. A combination of spontaneous and piezoelectric polarization can induce this interfacial charge. The fields, created by these bound charges have the effect of confining charge carriers near these interfaces. By confining charge carriers to a channel where scattering centers can be deliberately excluded the electron mobility can be enhanced, thus enhancing thermoelectric power factor. Simultaneously, phonons will not be affected by the fields and thus will be subject to the many scattering centers present in the majority of the structure.
摘要翻译：通过极化工程增强热电性能的方法。在材料内产生的内部电场用于空间上限制电子，以增强热电性能。通过在界面处存在结合的电荷，可以在材料内诱导电场。自发和压电极化的组合可以引起这种界面电荷。由这些绑定的电荷产生的电场具有将电荷载体限制在这些界面附近的作用。通过将电荷载流子限制在可以有意排除散射中心的通道，可以增强电子迁移率，从而提高热电功率因数。同时，声子不会受到这些领域的影响，因此将受到大多数结构中存在的许多散射中心的约束。

5. 发明申请

WO0156919A3 MICRO-ELECTRO-MECHANICAL-SYSTEM (MEMS) MIRROR DEVICE AND METHODS FOR FABRICATING THE SAME 审中-公开
标题翻译：微电子机械系统（MEMS）镜子装置及其制造方法
公开(公告)号：WO0156919A3
公开(公告)日：2002-03-28
申请号：PCT/US0103357
申请日：2001-02-01
申请人： CALIENT NETWORKS INC , BOWERS JOHN E , HELKEY ROGER JONATHAN , CORBALIS CHARLES M , SINK ROBERT KEHL , LEE SEUNG BOK , MACDONALD NOEL
发明人： BOWERS JOHN E , HELKEY ROGER JONATHAN , CORBALIS CHARLES M , SINK ROBERT KEHL , LEE SEUNG BOK , MACDONALD NOEL
IPC分类号： B81B3/00 , G02B26/08
CPC分类号： B81B3/004 , B81B2201/042 , G02B26/0841
摘要： A micro-electro-mechanical-system (MEMS) mirror device and methods for fabricating the same allow for a large range of angular motion for a center mirror component. The large range of angular motion for a center mirror component is dictated simply by a thickness of a substrate used or a thickness of a thick film used in making a support structure to support the center mirror component. The MEMS mirror device and methods for fabricating the same allow a large number mirror devices to be fabricated on a substrate. The MEMS mirror device includes a substrate. Electrodes are formed supported by the substrate. A support structure is formed adjacent to the electrodes. A hinge pattern and a mirror pattern having a center mirror component are formed such that the support structure supports the hinge pattern and mirror pattern. The support structure also supports the hinge pattern and mirror pattern such that a bottom surface of the center mirror component in a stationary non-rotating position is capable of exceeding a height of 50 mu m above the electrodes.
摘要翻译：微机电系统（MEMS）镜装置及其制造方法允许中心镜部件的大范围的角运动。用于中心镜部件的大范围的角运动简单地由所使用的基板的厚度或用于制造支撑结构以支撑中心镜部件的厚膜的厚度决定。 MEMS镜装置及其制造方法允许在衬底上制造大量镜装置。 MEMS反射镜装置包括基板。电极由衬底支撑形成。在电极附近形成支撑结构。形成具有中心镜部件的铰链图案和反射镜图案，使得支撑结构支撑铰链图案和反射镜图案。支撑结构还支撑铰链图案和镜面图案，使得在静止非旋转位置的中心镜部件的底面能够超过电极上方50μm的高度。

6. 发明申请

WO0033354A9 HIGH-EFFICIENCY HETEROSTRUCTURE THERMIONIC COOLERS 审中-公开
标题翻译：高效结构冷凝器
公开(公告)号：WO0033354A9
公开(公告)日：2001-07-19
申请号：PCT/US9927284
申请日：1999-11-17
申请人： UNIV CALIFORNIA
发明人： SHAKOURI ALI , BOWERS JOHN E
IPC分类号： H01J45/00 , H01L29/205 , H01L29/267 , H01L29/861 , H01L35/28 , H01L35/30
CPC分类号： H01L29/861 , H01J45/00 , H01L29/205 , H01L29/267
摘要： A heterostructure thermionic cooler and a method for making thermionic coolers, employing a barrier layer of varying conduction bandedge for n-type material, or varying valence bandedge for p-type material, that is placed between two layers of material. The barrier layer bandedge is at least kBT higher than the Fermi level of the semiconductor layer, which allows only selected, "hot" electrons, or electrons of high enough energy, across the barrier. The barrier layer is constructed to have an internal electric field such that the electrons that make it over the initial barrier are assisted in travel to the anode. Once electrons drop to the energy level at the anode, they lose energy to the lattice, thus heating the lattice of the anode. The barrier height of the barrier layer is high enough to prevent the electrons from traveling in the reverse direction.
摘要翻译：异质结构热离子冷却器和用于制造热离子冷却器的方法，使用放置在两层材料之间的用于n型材料的变化的导带的阻挡层或用于p型材料的变化的带状带。阻挡层带边缘至少比半导体层的费米能级高kBT，其仅允许穿过势垒的选定的“热”电子或足够高能量的电子。阻挡层被构造成具有内部电场，使得使其超过初始屏障的电子被辅助到行进到阳极。一旦电子降到阳极的能级，它们就会失去能量到晶格，从而加热阳极的晶格。阻挡层的势垒高度足够高以防止电子沿相反方向传播。

7. 发明申请

WO0033354A3 HIGH-EFFICIENCY HETEROSTRUCTURE THERMIONIC COOLERS 审中-公开
标题翻译：高效的异质结构超音速冷却器
公开(公告)号：WO0033354A3
公开(公告)日：2001-05-31
申请号：PCT/US9927284
申请日：1999-11-17
申请人： UNIV CALIFORNIA
发明人： SHAKOURI ALI , BOWERS JOHN E
IPC分类号： H01J45/00 , H01L29/205 , H01L29/267 , H01L29/861 , H01L35/28 , H01L35/30
CPC分类号： H01L29/861 , H01J45/00 , H01L29/205 , H01L29/267
摘要： A heterostructure thermionic cooler and a method for making thermionic coolers, employing a barrier layer of varying conduction bandedge for n-type material, or varying valence bandedge for p-type material, that is placed between two layers of material. The barrier layer bandedge is at least kBT higher than the Fermi level of the semiconductor layer, which allows only selected, "hot" electrons, or electrons of high enough energy, across the barrier. The barrier layer is constructed to have an internal electric field such that the electrons that make it over the initial barrier are assisted in travel to the anode. Once electrons drop to the energy level at the anode, they lose energy to the lattice, thus heating the lattice of the anode. The barrier height of the barrier layer is high enough to prevent the electrons from traveling in the reverse direction.
摘要翻译：一种异质结构热电子冷却器和一种制造热离子冷却器的方法，对n型材料采用不同导电边界的阻挡层，或对p型材料采用变化的价带边缘，其置于两层材料之间。势垒层边界至少比半导体层的费米能级高KT，这允许穿过势垒的选定的“热”电子或具有足够高能量的电子。阻挡层被构造成具有内部电场，以使得在初始阻挡层上方的电子被辅助传送到阳极。一旦电子下降到阳极的能量水平，它们就失去了晶格的能量，从而加热了阳极的晶格。阻挡层的势垒高度足够高以防止电子沿相反方向行进。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式