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1. 发明申请

WO1999016193A1 OPTICAL COMMUNICATION EQUIPMENT AND SYSTEM 审中-公开
标题翻译：光通信设备和系统
公开(公告)号：WO1999016193A1
公开(公告)日：1999-04-01
申请号：PCT/JP1997003337
申请日：1997-09-19
申请人： HITACHI, LTD. , KIMURA, Yoshinobu , MIYAO, Masanobu , NAKAGAWA, Kiyokazu , SUGII, Nobuyuki , MARUIZUMI, Takuya
发明人： HITACHI, LTD.
IPC分类号： H04B10/12
CPC分类号： H04B10/564 , G02B6/3636 , G02B6/3652 , G02B6/4202 , H01S5/0262 , H01S5/0264 , H01S5/0425 , H01S5/1228 , H04B10/291 , H04B10/504
摘要： Optical signal communication equipment and optical communication system which can be suitably used even when the transmitting speed and capacity of information transmitted by using optical signals are increased. On the optical signal transmitting side, signal light is generated by causing induced emission in an active medium by supplying exciting light to the medium in accordance with transmitting signals. The exciting light is supplied to the active medium in such a way that naturally emitted light is made incident to a semiconductor layer and the component of the light having a specific wavelength is Bragg-reflected by modulating the refractive index of the semiconductor layer by impressing the voltage pulse correspdoning to the transmitting information upon the semiconductor layer, and then, the reflected light is supplied to the medium as the exciting light. Since the Bragg reflection and associated induced emission show excellent responsiveness to voltage signals having pulses widths of 1x10 second on shorter, an optical communication system which can transmit optical signals at a transmitting speed of up to 100 Gb/s can be realized.
摘要翻译：即使当使用光信号发送的信息的发送速度和容量增加时，也可适当使用的光信号通信设备和光通信系统。在光信号发送侧，根据发送信号，通过向有源介质引起感应发射，向介质供给激励光，从而产生信号光。将激发光以这样的方式提供给有源介质，使得自然发射的光入射到半导体层，并且具有特定波长的光的分量通过调制半导体层的折射率而被布拉格反射，电压脉冲对应于半导体层上的发送信息，然后将反射光作为激发光提供给介质。由于布拉格反射和相关联的感应发射对较短的具有1×10 -9秒的脉冲宽度的电压信号具有优异的响应性，因此可以实现以高达100Gb / s的发送速度传输光信号的光通信系统。

2. 发明申请

WO1996028852A1 GROUP IV SEMICONDUCTOR OPTICAL DEVICE 审中-公开
标题翻译：第IV组半导体光学器件
公开(公告)号：WO1996028852A1
公开(公告)日：1996-09-19
申请号：PCT/JP1995000435
申请日：1995-03-15
申请人： HITACHI, LTD. , NAKAGAWA, Kiyokazu , NISHIDA, Akio , KIMURA, Yoshinobu , TAKAGI, Kazumasa
发明人： HITACHI, LTD.
IPC分类号： H01L33/00
CPC分类号： H01L33/34 , B82Y20/00 , H01S5/0262 , H01S5/0424 , H01S5/18319 , H01S5/18341 , H01S5/3427
摘要： A semiconductor optical device which uses a mixed crystal comprising Ge, C, Sn, etc., of Group IV semiconductors having a different atomic radius from that of Si as a light emission layer, disposes light emission layers at a period of integral multiples of the half of the light emission wavelength, and separates the light emission layer from a light modulation region. Since a multi-layered structure of the Group IV semiconductors such as Si and Ge, C, Sn is used, local strain due to a difference in atomic radius increases light emission efficiency, and the multi-layered film functions as an interference device of light. Because only light with a wavelength twice this period can exist inside the multi-layered film, light emission efficiency can be increased. Further, since the multi-layered structure has a periodical structure which is integral multiples of the half of the light emission wavelength, the light emission intensity can be increased. Since the light emission region and the light modulation region are formed adjacent to each other on the same substrate, a semiconductor optical device capable of high-speed light modulation can be accomplished. Because this structure can extremely reduce lattice mismatching with the substrate, no limitation on a layer thickness such as a critical film thickness exists. Accordingly, a design freedom for a film thickness for confining light and carriers and a band discontinuity value can increase, and a light emission intensity can be improved to about ten times that with the prior art devices.
摘要翻译：使用具有与Si的原子半径不同的第IV族半导体的Ge，C，Sn等的混晶作为发光层的半导体光学器件，以发光层的整数倍的周期配置发光层一半的发光波长，并且将发光层与光调制区域分离。由于使用诸如Si和Ge，C，Sn的IV族半导体的多层结构，因原子半径的差异导致的局部应变增加了发光效率，并且多层膜用作光的干涉装置。因为在多层膜内只能存在波长为两倍的波长的光，所以可以提高发光效率。此外，由于多层结构具有作为发光波长的一半的整数倍的周期结构，所以可以提高发光强度。由于发光区域和光调制区域在相同的基板上彼此相邻地形成，因此可以实现能够进行高速调光的半导体光学器件。因为这种结构可以极大地减少与衬底的晶格失配，所以不存在诸如临界膜厚度等层厚度的限制。因此，用于限制光和载流子的膜厚度的设计自由度和带不连续值可以增加，并且发光强度可以提高到现有技术装置的约10倍。

3. 发明申请

WO1997046949A1 MOLECULAR MODELING SYSTEM AND MOLECULAR MODELING METHOD 审中-公开
标题翻译：分子建模系统和分子建模方法
公开(公告)号：WO1997046949A1
公开(公告)日：1997-12-11
申请号：PCT/JP1997001951
申请日：1997-06-09
申请人： HITACHI, LTD. , SCHULTE, Jurgen , USHIO, Jiro , TAKEMURA, Yoshiaki , MARUIZUMI, Takuya
发明人： HITACHI, LTD.
IPC分类号： G06F17/00
CPC分类号： C07K1/00 , G06F19/16
摘要： A molecular modeling system and a molecular modeling method comprsing a molecular dynamics (MD) tool using a new potential related to a heterogeneous intermolecular interaction, a molecular modeling (MM) tool carrying out a new fast self-regulating optimization, a new molecular potential generator (MPG) tool, and a molecular modeling expert database tool in order to solve the problems concerning specified intermolecular interactions in modeling homogeneous and heterogeneous intermolecular interactions, such that the accuracy of the potential functional is poor and that either the potential function or the potential parameter is unknown. The above system and method serve to solve the problem that a parameter related to the functional of a specified interaction is unknown, the problem that the cost of calculation for the optimization of a new potential functional is high, and the problem of selection of an initial value of optimization procedures.
摘要翻译：一种分子模拟系统和分子模拟方法，其使用与异质分子间相互作用相关的新潜力的分子动力学（MD）工具，进行新的快速自我调节优化的分子建模（MM）工具，新的分子潜能发生器（MPG）工具和分子建模专家数据库工具，以解决在均匀和异质分子间相互作用建模中涉及指定的分子间相互作用的问题，使得潜在功能的准确性差，并且潜在的功能或潜在参数是未知数上述系统和方法用于解决与指定交互的功能相关的参数未知的问题，新的潜在功能的优化计算成本高的问题以及初始化的选择问题优化程序的价值。

4. 发明申请

WO1990004169A1 METHOD AND APPARATUS FOR DETECTING PARTICULAR SUBSTANCE 审中-公开
标题翻译：用于检测特定物质的方法和装置
公开(公告)号：WO1990004169A1
公开(公告)日：1990-04-19
申请号：PCT/JP1989001032
申请日：1989-10-06
申请人： HITACHI, LTD. , MARUIZUMI, Takuya , YAJIMA, Yusuke , MITSUI, Yasuhiro
发明人： HITACHI, LTD.
IPC分类号： G01N24/00
CPC分类号： G01V3/14 , G01N23/04 , G01R33/441
摘要： A substance to be inspected is irradiated with electromagnetic waves having energy close to transition energy between the spin conditions of atomic nuclei in the particular substance, the atomic nuclei having energies split by the electrostatic mutual action of the atomic nuclei and the electric field in the substance specific to said particular substance. Transition between the spin conditions is detected in order to detect the presence of said particular substance in the substance that is being inspected.

5. 发明申请

WO1999031877A1 MULTI-PROJECTION IMAGE DISPLAY DEVICE 审中-公开
标题翻译：多投影图像显示装置
公开(公告)号：WO1999031877A1
公开(公告)日：1999-06-24
申请号：PCT/JP1997004588
申请日：1997-12-12
申请人： HITACHI, LTD. , YAMASAKI, Masami , TAKEDA, Haruo
发明人： HITACHI, LTD.
IPC分类号： H04N05/74
CPC分类号： H04N9/3147 , H04N9/12
摘要： A multi-projection image display device using a plurality of image projectors to form one picture on a screen, in which images projected from the projectors are smoothly connected with one another, so that seams of the images do not appear conspicuously. The image display device has projectors (0121, 0122, 0123, 0124) and a screen (0140) laid out in such a manner that maximum image projection ranges (0151, 0152, 0153, 0154) of the respective projectors ovelap the adjacent ranges. An image signal control unit (0110) for processing an image signal supplied from an external image input (0180) has, therein, a member for cutting out a partial image area dealt with by each projector, an image converting member for performing geometric transformation and local color correction of the partial image, and an arithmetic control member for controlling the image converting member on the basis of image information inputted from a screen state monitor camera (0130). With this structure, smoothing of the seams between the images may be realized simply by image signal processing, and precise adjustment of the optical system of the projectors becomes unnecessary.
摘要翻译：一种多投影图像显示装置，其使用多个图像投影仪在屏幕上形成一个图像，其中从投影仪投影的图像彼此平滑地连接，使得图像的接缝不显着。图像显示装置具有投影仪（0121，0122，0123，0124）和以相应投影仪的最大图像投影范围（0151,022,033,0154）相邻范围的方式布置的屏幕（0140）。一种用于处理从外部图像输入（0180）提供的图像信号的图像信号控制单元（0110），其中具有用于切割由每个投影仪处理的部分图像区域的部件，用于执行几何变换的图像转换部件，部分图像的局部颜色校正，以及用于基于从屏幕状态监视摄像机（0130）输入的图像信息来控制图像转换部件的运算控制部件。利用这种结构，可以简单地通过图像信号处理来实现图像之间的接缝的平滑化，并且不需要投影仪的光学系统的精确调整。

6. 发明申请

WO1999031656A1 MAGNETIC RECORDING MEDIUM AND MAGNETIC STORAGE 审中-公开
标题翻译：磁记录介质和磁存储
公开(公告)号：WO1999031656A1
公开(公告)日：1999-06-24
申请号：PCT/JP1997004586
申请日：1997-12-12
申请人： HITACHI, LTD. , DAVID, Djulianto Djayaprawira , ISHIKAWA, Akira , KOJIMA, Shuuichi , MATSUDA, Yoshibumi , YAHISA, Yotsuo , SUZUKI, Hiroyuki
发明人： HITACHI, LTD.
IPC分类号： G11B05/66
CPC分类号： G11B5/012
摘要： The ratio BrOR of the residual magnetic flux density in a circumferential direction to the residual magnetic flux density in a radial direction is 0.95 - 1.05 and the ratio HcOR of the coercive force in a circumferential direction to the coercive force in a radial direction is 1.05 - 1.2 in the substrate surface of a magnetic recording medium. Therefore, a high output resolution, a low medium noise and a high track recording density are simultaneously achieved in recording at a high line recording density. When a magnetic storage apparatus is constituted by using a high S/N magnetic recording medium like this, a magnetic disc apparatus which has a high surface recording density, is low in cost and small in size, and a large capacity and a high reliability can be provided.
摘要翻译：圆周方向的剩余磁通密度与径向残留磁通密度的比率BrOR为0.95〜1.05，圆周方向的矫顽力的比率HcOR与径向的矫顽力的比值为1.05〜 1.2在磁记录介质的基板表面中。因此，在高线路记录密度的记录中同时实现高输出分辨率，低中等噪声和高记录密度。当通过使用这样的高S / N磁记录介质构成磁存储装置时，具有高表面记录密度的磁盘装置成本低，尺寸小，容量大，可靠性高提供。

7. 发明申请

WO1999031608A1 METHOD FOR DEVELOPING SYSTEM BOARD 审中-公开
标题翻译：开发系统板的方法
公开(公告)号：WO1999031608A1
公开(公告)日：1999-06-24
申请号：PCT/JP1997004620
申请日：1997-12-16
申请人： HITACHI, LTD. , SHIMIZU, Isao , SATOU, Masayuki
发明人： HITACHI, LTD.
IPC分类号： G06F17/50
CPC分类号： G06F17/5022
摘要： A method for developing a system board using a semiconductor integrated circuit device, wherein the development of a system board is made before the development of the circuit device used for the system board is actually acquired by verifying (S31 and S32) whether or not the system board meets the target specifications of the system board by carrying out simulation using a device model in which the functions of the circuit device are modeled by using a function describing language in such a way that the target specifications of the circuit device can be met and the description of the state of the external interface of the circuit device defined conformable to the target specifications. Since the device model in which the functions of the circuit device are described meets the target specifications of the circuit device, the device model is simulated together with the description of the interface state, whether or not the circuit part related to the description of the state of the interface, namely, the interface with the circuit device is appropriate can be verified from the results of the simulation, and the design of the system board can be carried out before the completion of the development of the circuit device or the device is acquired.
摘要翻译：一种用于使用半导体集成电路器件开发系统板的方法，其中系统板的开发是在通过验证（S31和S32）是否实际获取用于系统板的电路器件的开发之前进行的（S31和S32）通过使用使用功能描述语言来对电路装置的功能进行建模的装置模型进行仿真来实现系统板的目标规格，使得可以满足电路装置的目标规格和描述符合目标规格的电路设备外部接口的状态。由于描述了电路装置的功能的装置模型符合电路装置的目标规格，因此将与接口状态的描述一起模拟装置模型，无论电路部分是否与状态描述相关的接口，即与电路设备的接口是合适的，可以从仿真结果中验证，并且系统板的设计可以在完成电路设备或设备的开发之前进行。

8. 发明申请

WO1999027646A1 HIGH-FREQUENCY AMPLIFIER CIRCUIT DEVICE AND HIGH-FREQUENCY TRANSMISSION SYSTEM USING THE SAME 审中-公开
标题翻译：高频放大器电路装置及其高频传输系统
公开(公告)号：WO1999027646A1
公开(公告)日：1999-06-03
申请号：PCT/JP1997004248
申请日：1997-11-21
申请人： HITACHI, LTD. , SAKAMOTO, Kozo , KATSUEDA, Mineo , YOSHIDA, Isao , HOTTA, Masao
发明人： HITACHI, LTD.
IPC分类号： H03F03/60
CPC分类号： H01L24/05 , H01L23/66 , H01L24/06 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2223/6611 , H01L2223/6644 , H01L2224/02166 , H01L2224/04042 , H01L2224/05 , H01L2224/05554 , H01L2224/32225 , H01L2224/48095 , H01L2224/48101 , H01L2224/48227 , H01L2224/4847 , H01L2224/48472 , H01L2224/49113 , H01L2224/49175 , H01L2224/73265 , H01L2924/00014 , H01L2924/01058 , H01L2924/01074 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/3011 , H03F3/601 , H01L2924/00 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599
摘要： A high-frequency power amplifier circuit device, with the frequency of the operating band between 500 MHz and approximately 10 GHz and power level of not lower than 0.5 W, has a problem to be settled that no increase in power level can be expected in proportion to the increase in the gate width of a power transistor. In addition to the solution of the above problem, an optimal high-frequency power amplifier circuit device and a high-frequency transmission system using the device are constituted to reduce the space in the matching circuit, to improve the linearity and to prevent oscillation in a power transistor (10) and an input/output matching circuit in such a way that the grounds (2) and (4) of an input-side strip line (61) and output-side strip line (62) are separated from each other and the grounds (2) and (4) are respectively connected to an input-side ground electrode (24a) and output-side ground electrode (23a) provided on a semiconductor chip carrying the power transistor (10). Consequently, the effective source impedance component which has been the cause of the deterioration of high-frequency power amplifier circuit in mutual conductance can be reduced.
摘要翻译：具有500MHz至约10GHz之间的工作频带的频率和不低于0.5W的功率电平的高频功率放大器电路装置有一个问题需要解决，不能预期功率级别的增加可以按比例到功率晶体管的栅极宽度的增加。除了上述问题的解决之外，还构成了使用该装置的最佳高频功率放大器电路装置和高频传输系统，以减小匹配电路中的空间，从而提高线性度和防止振荡功率晶体管（10）和输入/输出匹配电路，使得输入侧带状线（61）和输出侧带状线（62）的接地（2）和（4）彼此分离并且接地（2）和（4）分别连接到设置在承载功率晶体管（10）的半导体芯片上的输入侧接地电极（24a）和输出侧接地电极（23a）。因此，可以降低高频功率放大器电路在互导中的恶化的有效源阻抗分量。

9. 发明申请

WO1999021789A1 DOOR DEVICE FOR ELEVATOR 审中-公开
标题翻译：电梯门设备
公开(公告)号：WO1999021789A1
公开(公告)日：1999-05-06
申请号：PCT/JP1997003875
申请日：1997-10-24
申请人： HITACHI, LTD. , SAKAI, Mitsuru , MATSUURA, Atsushi , ONODERA, Minoru , IIDA, Takaaki , SHIBATA, Tadashi , TAKEDA, Kazutoshi
发明人： HITACHI, LTD.
IPC分类号： B66B13/30
CPC分类号： B66B13/08 , E05D15/0626 , E05Y2900/104
摘要： A door device for elevators, in which a door is hung by a door hanger and driven in a horizontal direction, is constructed such that two adjacent different planes connect the door and the door hanger to each other in order to provide a simple construction of the door device for elevators, in which a connection between the door and the door hanger is not easily bent.
摘要翻译：门被挂在门架上并沿水平方向驱动的电梯的门装置被构造成使得两个相邻的不同的平面将门与门挂架相互连接，以便提供简单的结构电梯的门装置，其中门和门吊架之间的连接不容易弯曲。

10. 发明申请

WO1999017302A1 NUCLEAR PLANT AND ITS WATER QUALITY CONTROL METHOD 审中-公开
标题翻译：核工厂及其水质控制方法
公开(公告)号：WO1999017302A1
公开(公告)日：1999-04-08
申请号：PCT/JP1997003502
申请日：1997-10-01
申请人： HITACHI, LTD. , UETAKE, Naohito , WADA, Yoichi
发明人： HITACHI, LTD.
IPC分类号： G21D01/00
CPC分类号： G21C17/0225 , G21Y2002/103 , G21Y2004/20
摘要： Water quality control method used when hydrogen is injected into reactor water of a BWR plant. Even if low concentration hydrogen is injected, SCC of the core internals can be suppressed and, further, local corrosion can be avoided. A metal oxide which reacts as an oxidation catalyst of hydrogen is applied to the surfaces of the core internals of a boiling water reactor beforehand and then hydrogen is injected into the reactor water with which the core internals are in contact.
摘要翻译：将氢气注入BWR工厂的反应堆水中时使用的水质控制方法。即使注入低浓度的氢，也可以抑制芯内部的SCC，进一步避免局部腐蚀。将作为氢氧化催化剂反应的金属氧化物预先施加到沸水反应堆的核心内部表面，然后将氢气注入核心内部与之接触的反应器水中。

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