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1. 发明申请

WO2009142646A1 OPTICAL INTERCONNECT 审中-公开
标题翻译：光学互联
公开(公告)号：WO2009142646A1
公开(公告)日：2009-11-26
申请号：PCT/US2008/064761
申请日：2008-05-23
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , FATTAL, David, A. , STEWART, Duncan , WU, Wei
发明人： FATTAL, David, A. , STEWART, Duncan , WU, Wei
IPC分类号： G02B6/26
CPC分类号： G02B6/34 , B82Y20/00 , G02B6/1225 , G02B6/29311 , G02B6/29334 , G02B6/43
摘要： An optical interconnect has first (101) and second (103) substantially perpendicular optical waveguides and an optical grating (105) disposed between and evanescently coupled to the waveguides (101, 103). The optical grating (105) includes a plurality perforated rows (107) that are oriented at an angle of approximately 45 degrees with respect to the first (101) and second (103) optical waveguides.
摘要翻译：光学互连具有第一（101）和第二（103）基本上垂直的光波导和设置在波导（101,103）之间并且ev逝地耦合到波导（101,103）的光栅（105）。光栅（105）包括相对于第一（101）和第二（103）光波导以大约45度的角度定向的多个穿孔列（107）。

2. 发明申请

WO2010011207A1 LIGHT-EMITTING DEVICES 审中-公开
标题翻译：发光装置
公开(公告)号：WO2010011207A1
公开(公告)日：2010-01-28
申请号：PCT/US2008/009077
申请日：2008-07-25
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , FATTAL, David, A. , STEWART, Duncan
发明人： FATTAL, David, A. , STEWART, Duncan
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/08
摘要： Various embodiments of the present invention are directed to semiconductor light-emitting devices that provide energy efficient, high-speed modulation rates in excess of 10 Gbits/sec. These devices include a light-emitting layer embedded between two relatively thicker semiconductor layers. The energy efficient, high-speed modulation rates result from the layers adjacent to the light-emitting layer being composed of semiconductor materials with electronic states that facilitate injection of carriers into the light-emitting layer for light emission when an appropriate light-emitting voltage is applied and facilitate the removal of carriers when an appropriate light-quenching voltage is applied.
摘要翻译：本发明的各种实施例涉及提供超过10G比特/秒的节能高速调制速率的半导体发光器件。这些器件包括嵌入两个较厚的半导体层之间的发光层。能量效率高的调制速率是由与发光层相邻的层组成的，这些半导体材料由具有电子状态的半导体材料构成，当电流为适当的发光电压时，有助于将载流子注入发光层进行发光当施加适当的光熄灭电压时，施加并促进载体的去除。

3. 发明申请

WO2008048215A2 CONTACT LITHOGRAPHY APPARATUS, SYSTEM AND METHOD 审中-公开
标题翻译：联系人地平线设备，系统和方法
公开(公告)号：WO2008048215A2
公开(公告)日：2008-04-24
申请号：PCT/US2006/028299
申请日：2006-07-21
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , STEWART, Duncan , WU, Wei
发明人： STEWART, Duncan , WU, Wei
IPC分类号： G03F7/00 , G03F7/20
CPC分类号： G03F7/7035 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A contact lithography apparatus 100, 220, system 200 and method 300 use a deformation 320 to facilitate pattern transfer 300. The apparatus 100, 220, system 200 and method 300 include a spacer 120, 226 that provides a spaced apart parallel and proximal orientation 310 of lithographic elements, such as a mask 110, 228a, 222 and a substrate 130, 228b, 224, when in mutual contact with the spacer 120, 226. One or more of the mask 110, 228a, 222, the substrate 130, 228b, 224 and the spacer 120, 226 is deformable, such that deformation 320 thereof facilitates the pattern transfer 300.
摘要翻译：接触式光刻设备100,220，系统200和方法300使用变形320以便于图案转移300.设备100,220，系统200和方法300包括间隔物120,226，其间隔开的平行和近端取向310 当与间隔物120,226相互接触时，诸如掩模110,228a，222和衬底130,228b，224之间的光刻元件的一个或多个掩模110,228a，222，衬底130,228b ，224和间隔件120,226是可变形的，使得其变形320有利于图案转移300。

4. 发明申请

WO2008045545A2 DEFORMATION-BASED CONTACT LITHOGRAPHY SYSTEMS, APPARATUS AND METHODS 审中-公开
标题翻译：基于变形的联系人LITHOGRAPHY SYSTEMS，APPARATUS AND METHODS
公开(公告)号：WO2008045545A2
公开(公告)日：2008-04-17
申请号：PCT/US2007/021850
申请日：2007-10-12
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , STEWART, Duncan , WALMSLEY, Robert, G. , HARTWELL, Peter , WU, Wei
发明人： STEWART, Duncan , WALMSLEY, Robert, G. , HARTWELL, Peter , WU, Wei
IPC分类号： G03F7/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F1/38 , G03F1/50
摘要： A pattern tool (200 or 200a) and/or substrate (300 or 300a) including one or more strain control regions (208 or 308) to prevent deformation-related misalignment.
摘要翻译：包括一个或多个应变控制区域（208或308）的图形工具（200或200a）和/或基板（300或300a），以防止变形相关的未对准。

5. 发明申请

WO2010085241A1 MULTILAYER MEMRISTIVE DEVICES 审中-公开
标题翻译：多层复合器件
公开(公告)号：WO2010085241A1
公开(公告)日：2010-07-29
申请号：PCT/US2009/031458
申请日：2009-01-20
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , TONG, William M. , QUITORIANO, Nathaniel J. , STEWART, Duncan , KUEKES, Philip J.
发明人： TONG, William M. , QUITORIANO, Nathaniel J. , STEWART, Duncan , KUEKES, Philip J.
IPC分类号： H01L27/115 , H01L21/8247 , H01L21/265
CPC分类号： H01L21/26586 , H01L45/08 , H01L45/1233 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/165
摘要： A multilayer memristive device includes a first electrode (410); a second electrode (405); a first memristive region (430) and a second memristive region (435) which created by directional ion implantation of dopant ions (420, 425) and are interposed between the first electrode (410) and the second electrode (405); and mobile dopants (315) which move within the first memristive region (430) and the second memristive region (435) in response to an applied electrical field.
摘要翻译：多层回忆装置包括第一电极（410）; 第二电极（405）; 通过定向离子注入掺杂剂离子（420,425）而形成的第一忆阻区（430）和第二忆阻区（435），并置于第一电极（410）和第二电极（405）之间; 以及响应于施加的电场在第一忆阻区（430）和第二忆阻区（435）内移动的移动掺杂剂（315）。

6. 发明申请

WO2010014064A1 MULTI-LAYER RECONFIGURABLE SWITCHES 审中-公开
标题翻译：多层可重构开关
公开(公告)号：WO2010014064A1
公开(公告)日：2010-02-04
申请号：PCT/US2008/009246
申请日：2008-07-31
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Jianhua , BORGHETTI, Julien , STEWART, Duncan , WILLIAMS, R. Stanley
发明人： YANG, Jianhua , BORGHETTI, Julien , STEWART, Duncan , WILLIAMS, R. Stanley
IPC分类号： H01L29/41
CPC分类号： H01L29/861 , H01L27/101 , H01L27/1021 , H01L29/8615 , H01L29/8616 , H01L29/872 , H01L45/08 , H01L45/1233 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147
摘要： Embodiments of the present invention are directed to reconfigurable two-terminal electronic switch devices (100) comprising a compound (102) sandwiched between two electrodes (104,106). These devices are configured so that the two electrode/compound interface regions can be either rectifying or conductive, depending on the concentration of dopants at the respective interface, which provides four different device operating characteristics. By forcing charged dopants into or out of the interface regions with an applied electric field pulse, a circuit element can be switched from one type of stable operation to another in at least three different ways. A family of devices built to express these properties display behaviors that provide new opportunities for nanoscale electronic devices.
摘要翻译：本发明的实施例涉及包括夹在两个电极（104,106）之间的化合物（102）的可重新配置的两端子电子开关装置（100）。这些器件被配置为使得两个电极/复合界面区域可以是整流或导电，这取决于各个界面处的掺杂剂的浓度，其提供四种不同的器件工作特性。通过用施加的电场脉冲将带电荷的掺杂剂强制进出界面区域，电路元件可以以至少三种不同的方式从一种类型的稳定操作切换到另一种。一系列用于表现这些属性的设备显示出为纳米级电子设备提供新机会的行为。

7. 发明申请

WO2008088720A1 CAPACITIVELY COUPLING LAYERS OF A MULTILAYER DEVICE 审中-公开
标题翻译：多层设备的电容耦合层
公开(公告)号：WO2008088720A1
公开(公告)日：2008-07-24
申请号：PCT/US2008/000367
申请日：2008-01-10
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , KAMINS, Theodore, I. , STEWART, Duncan , QUITORIANO, Nathaniel, J.
发明人： KAMINS, Theodore, I. , STEWART, Duncan , QUITORIANO, Nathaniel, J.
IPC分类号： H05K3/46
CPC分类号： H01L31/02002 , G02B6/43 , H01L2924/0002 , H01L2924/00
摘要： A multilayer device (100, 200, 300, 400, 500) includes an electronic device layer (104, 204, 304, 404, 504) a first electrode (110, 210, 410, 510) associated witht electronic layer (104, 204, 304, 404, 504), an optical layer (108, 208, 308, 408, 508), a second electrode (112, 212, 412, 512) associated with the optical layer (108, 208, 308, 408, 508), and an insulator layer (106, 206, 306, 406, 506) provided between the first and second electrodes. The first and second electrodes are capacitively coupled to each other to faciliate electrical communication between the electronic device layer (104, 204, 304, 404, 504) and the optical layer (108, 208, 308, 408, 508) through transmission of an electrical signal between the first and second electrodes. The electrical signal may be transmiited through the insulator layer (106, 206, 306, 406, 506). In additional, the electronic device layer (104, 204, 304, 404, 504 and the optical layer (108, 208, 308, 408, 508) may be in electrical communication with each other through capacitive coupling of the first electrode (110, 210, 410, 510) and the second electrode (112, 212, 412, 512).
摘要翻译：多层器件（100,200,300,400,500）包括与电子层（104,204）相关联的第一电极（110,210,410,510）的电子器件层（104,204,304,404,504），304,404,504），光学层（108,208,308,408,508），与所述光学层（108,208,308,408,508）508相关联的第二电极（112,212,412,512））和设置在第一和第二电极之间的绝缘体层（106,206,306,406,506）。第一和第二电极彼此电容耦合以通过传输电子装置层（104,204,304,504）和光学层（108,208,308,408,508）之间的电通信来促进电子设备层第一和第二电极之间的电信号。电信号可以透过绝缘体层（106,206,306,406,506）传输。另外，电子器件层（104,204,304,404,504）和光学层（108,208,308,408,508）可以通过第一电极（110,104）的电容耦合而彼此电连通， 210,410,510）和所述第二电极（112,212,412,512）。

8. 发明申请

WO2010087836A1 ELECTRICALLY ACTUATED DEVICE 审中-公开
标题翻译：电动启动装置
公开(公告)号：WO2010087836A1
公开(公告)日：2010-08-05
申请号：PCT/US2009/032496
申请日：2009-01-29
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , PICKETT, Matthew, D. , CHO, Hans, S. , BORGHETTI, Julien , STEWART, Duncan
发明人： PICKETT, Matthew, D. , CHO, Hans, S. , BORGHETTI, Julien , STEWART, Duncan
IPC分类号： H01L29/40 , H03K19/0948 , H03K17/687 , G06F13/00
CPC分类号： H01L45/145 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/14 , H01L45/146 , H01L45/147 , H01L45/165
摘要： An electrically actuated device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle, thereby forming a junction therebetween. A material is established on the first electrode and at the junction. At least a portion of the material is a matrix region. A current conduction channel extends substantially vertically between the first and second electrodes, and is defined in at least a portion of the material positioned at the junction. The current conduction channel has a controlled profile of dopants therein.
摘要翻译：电驱动装置包括第一电极和第二电极，其以非零角度与第一电极交叉，从而在它们之间形成接合部。在第一电极和接合处建立材料。材料的至少一部分是矩阵区域。电流传导通道在第一和第二电极之间基本垂直地延伸，并且限定在位于结处的材料的至少一部分中。电流传导通道在其中具有受控的掺杂剂分布。

9. 发明申请

WO2009017769A2 MICRORESONATOR SYSTEM AND METHODS OF FABRICATING THE SAME 审中-公开
标题翻译：微波炉系统及其制造方法
公开(公告)号：WO2009017769A2
公开(公告)日：2009-02-05
申请号：PCT/US2008/009224
申请日：2008-07-30
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , TAN, Michael , WANG, Shih-Yuan , STEWART, Duncan , FATTAL, David
发明人： TAN, Michael , WANG, Shih-Yuan , STEWART, Duncan , FATTAL, David
IPC分类号： H01S3/08 , H01S3/109
CPC分类号： H01S5/1075 , B82Y20/00 , G02B6/12007 , H01S5/021 , H01S5/0215 , H01S5/026 , H01S5/0422 , H01S5/1032 , H01S5/1042 , H01S5/2063 , H01S5/222 , H01S5/3211 , H01S5/34306
摘要： Various embodiments of the present invention are related to microresonator systems that can be used as a laser, a modulator, and a photodetector and to methods for fabricating the microresonator systems. In one embodiment, a microresonator system (100) comprises a substrate (106) having a top surface layer (104), at least one waveguide (114,116) embedded within the substrate (106), and a microdisk (102) having a top layer (118), an intermediate layer (122), a bottom layer (120), current isolation region (128), and a peripheral annular region (124,126). The bottom layer (120) of the microdisk (102) is in electrical communication with the top surface layer (104) of the substrate (106) and is positioned so that at least a portion of the peripheral annular region (124,126) is located above the at least one waveguide (114,116). The current isolation region (128) is configured to occupy at least a portion of a central region of the microdisk and has a relatively lower refractive index and relatively larger bandgap than the peripheral annular region.
摘要翻译：本发明的各种实施方案涉及可用作激光的微谐振器系统，调制器和光电检测器以及用于制造微谐振器系统的方法。在一个实施例中，微谐振器系统（100）包括具有顶表面层（104），嵌入衬底（106）内的至少一个波导（114,116）的衬底（106）和具有顶层（118），中间层（122），底层（120），电流隔离区域（128）和外围环形区域（124,126）。微盘（102）的底层（120）与衬底（106）的顶表面层（104）电连通并且被定位成使周边环形区域（124,126）的至少一部分位于所述至少一个波导（114,116）。电流隔离区128被配置为占据微盘的中心区域的至少一部分，并且具有比周边环形区域相对更低的折射率和相对较大的带隙。

10. 发明申请

WO2006115968A2 ACTIVE INTERCONNECTS AND CONTROL POINTS IN INTEGRATED CIRCUITS 审中-公开
标题翻译：集成电路中的主动互连和控制点
公开(公告)号：WO2006115968A2
公开(公告)日：2006-11-02
申请号：PCT/US2006/014856
申请日：2006-04-19
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , WILLIAMS, R., Stanley , KUEKES, Phillip, J. , PERNER, Frederick, A. , SNIDER, Gregory, S. , STEWART, Duncan
发明人： WILLIAMS, R., Stanley , KUEKES, Phillip, J. , PERNER, Frederick, A. , SNIDER, Gregory, S. , STEWART, Duncan
IPC分类号： H01L21/66
CPC分类号： H05K7/1092 , H01L23/5228 , H01L2924/0002 , H01L2924/00
摘要： In various embodiments of the present invention, tunable resistors (1102) are introduced at the interconnect layer of the integrated circuits (102) in order to provide a means for adjusting internal voltage and/or current levels within the integrated circuit to repair defective components or to configure the integrated circuit following manufacture. For example, when certain internal components, such as transistors, do not have specified electronics characteristics due to manufacturing defects, adjustment of the variable resistances of the tunable resistors (1102) included in the interconnect layer of integrated circuits according to embodiments of the present invention can be used to adjust internal voltage and/or levels in order to ameliorate the defective components. In other cases, the tunable resistors may be used as switches to configure integrated circuit components, including individual transistors and logic gates as well as larger, hierarchically structured functional modules and domains. In some cases, components and modules may be turned off, while, in other cases, components and modules may be turned on.
摘要翻译：在本发明的各种实施例中，可调谐电阻器（1102）被引入集成电路（102）的互连层，以便提供用于调整集成电路内的内部电压和/或电流水平以修复有缺陷的部件或配置后续制造的集成电路。例如，当诸如晶体管的某些内部部件由于制造缺陷而没有指定的电子特性时，根据本发明的实施例调整包括在集成电路的互连层中的可调电阻器（1102）的可变电阻可以用于调整内部电压和/或电平，以改善有缺陷的部件。在其他情况下，可调谐电阻器可以用作开关来配置集成电路组件，包括单独的晶体管和逻辑门以及更大的分层结构的功能模块和域。在某些情况下，可能会关闭组件和模块，而在其他情况下，可能会打开组件和模块。

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