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1. 发明申请

WO1993009472A1 LIGHT EXPOSURE DEVICE 审中-公开
标题翻译：灯光曝光装置
公开(公告)号：WO1993009472A1
公开(公告)日：1993-05-13
申请号：PCT/DE1991000860
申请日：1991-10-30
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , VOGT, Holger , KÜCK, Heinz , HESS, Günther , GEHNER, Andreas
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： G03F07/20
CPC分类号： G03F7/70283 , G03F7/70291 , G03F7/70358
摘要： A light exposure device for directly exposing photosensitive layers has a light source (2) and a pattern generator (3). The pattern generator (3) has an optical schlieren system (14) and an active, matrix-addressable surface light modulator (13). The schlieren system (14) has a schlieren objective (15) and a projection objective (16), as well as a reflecting device (17) arranged between both objectives that directs the light from the light source (2) onto the surface (19) of the surface light modulator (13). A filtering device (17, 17b) filters out diffracted light and lets through non diffracted light from the surface light modulator (13) to the projection objective (16). The structure to be exposed is secured on a movable positioning table (7). The surface light modulator is (13) addressed so that its non-addressed surface areas (19a, 19b, ...) correspond to the projection areas of the structure to be exposed.
摘要翻译：用于直接曝光感光层的曝光装置具有光源（2）和图案发生器（3）。图案发生器（3）具有光学施胶系统（14）和有源矩阵寻址表面光调制器（13）。所述分光镜系统（14）具有分光镜（15）和投影物镜（16），以及布置在两个物镜之间的反射装置（17），其将来自光源（2）的光引导到表面（19））表面光调制器（13）。过滤装置（17,17b）滤出衍射光并通过来自表面光调制器（13）到投影物镜（16）的非衍射光。要暴露的结构被固定在可动定位台（7）上。表面光调制器（13）被寻址，使得其未寻址的表面区域（19a，19b，...）对应于要暴露的结构的投影区域。

2. 发明申请

WO1993009469A1 EXPOSURE DEVICE 审中-公开
标题翻译：曝光装置
公开(公告)号：WO1993009469A1
公开(公告)日：1993-05-13
申请号：PCT/DE1991000859
申请日：1991-10-30
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , VOGT, Holger , KÜCK, Heinz , HESS, Günther , GEHNER, Andreas
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： G03F01/00
CPC分类号： G03F7/70283 , G03F7/70291 , G03F7/70358
摘要： An exposure device (1) useful for producing originals (6) or for directly exposing electronic elements has a light source (2) and a pattern generator (3). In order to shorten the required write or exposure time with an exposure device (1) having a simplified structure, the pattern generator (3) has an optical schlieren system (15, 17) and an active, matrix-addressable surface light modulator (13). The surface light modulator (13) has a reflecting surface whose addressed areas diffractively reflect incident light and whose non-addressed surface areas reflect incident light without diffraction. The schlieren system (15, 17) has a schlieren objective (15), a projection objective (16) and a reflecting device (17) which directs the light from the light source (2) onto the surface of the surface light modulator (13). The schlieren objective (15) is arranged at a short distance from the surface light modulator (13), in relation to its focal depth. A focussing device (4c) focusses the light from the light source (2) in at least one point (P) spaced apart from the reflecting device (17). At least one virtual punctual light source (P') can be associated to the point (P) by reflection of the point (P) on the reflecting device (17). A filtering device (18) is arranged on the diffraction plane of the virtual punctual light source (P'), between the schlieren objective (15) and the projection objective (16), and a movable positioning table (7) is provided, upon which the original (6), the electronic element or the structure may be secured.
摘要翻译：用于产生原稿（6）或直接暴露电子元件的曝光装置（1）具有光源（2）和图案发生器（3）。为了通过具有简化结构的曝光装置（1）缩短所需的写入或曝光时间，图案发生器（3）具有光学均匀系统（15,17）和有源矩阵寻址表面光调制器（13））。表面光调制器（13）具有反射表面，其寻址区域衍射地反射入射光，并且其未寻址的表面区域反射入射光而不衍射。分光光度计系统（15,17）具有均匀物镜（15），投影物镜（16）和反射装置（17），其将来自光源（2）的光引导到表面光调制器（13）的表面上）。散射物镜（15）相对于其焦深设置在与表面光调制器（13）相距很短的距离处。聚焦装置（4c）将来自光源（2）的光聚焦在与反射装置（17）间隔开的至少一个点（P）中。通过反射装置（17）上的点（P）的反射，至少一个虚拟准时光源（P'）可以与点（P）相关联。过滤装置（18）被布置在虚拟准时光源（P'）的衍射平面上，在施胶物镜（15）和投影物镜（16）之间，并且提供可动定位台（7）原始（6），电子元件或结构可以被固定。

3. 发明申请

WO1991017483A1 ILLUMINATION DEVICE 审中-公开
标题翻译：照明装置
公开(公告)号：WO1991017483A1
公开(公告)日：1991-11-14
申请号：PCT/DE1991000375
申请日：1991-05-02
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , VOGT, Holger , KÜCK, Heinz , HESS, Gunther , GEHNER, Andreas
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： G03F07/20
CPC分类号： G03F7/70283 , G03F7/70291 , G03F7/70358 , G03F7/70425
摘要： The illumination device (1) proposed is designed to produce patterns (6), or for the direct illumination of electronic elements, and includes a light source (2) and an original generator (3). In order to shorten the exposure time necessary with a simplified illumination-device structure, the original generator (3) includes an optical schlieren system (15, 17) and an active, matrix-addressable surface light modulator (13) which has a visco-elastic control film with a reflective surface (19). Disposed between the schlieren lens (15) and the projection lens (16) in the schlieren system (14) is a mirror (17) which preferably has two functions, not only reflecting the light from the light source (2) to the light modulator (13) but also filtering out undiffracted reflected light. The schlieren lens is located at a distance from the light modulator (13) which is short relative to the focal length of the lens. A positioning table (7) designed to hold the pattern (6) or the electronic element is disposed in such a way that sharp images of areas (19a, 19b) on the surface of the light modulator (13) can be produced on the pattern or the electronic element.
摘要翻译：提出的照明装置（1）被设计成产生图案（6）或用于电子元件的直接照明，并且包括光源（2）和原始发生器（3）。为了缩短使用简化的照明装置结构所需的曝光时间，原始发生器（3）包括光学施胶系统（15,17）和有源矩阵寻址表面光调制器（13）具有反射表面的弹性控制膜（19）。布置在施莱伦系统（14）中的均匀透镜（15）和投影透镜（16）之间的是镜子（17），其优选地具有两个功能，不仅将来自光源（2）的光反射到光调制器（13），而且滤除未衍射的反射光。色散透镜位于离调制器（13）一段距离处，该光调制器相对于透镜的焦距较短。设计成保持图案（6）或电子元件的定位台（7）以这样的方式设置，使得可以在图案上产生光调制器（13）表面上的区域（19a，19b）的清晰图像或电子元件。

4. 发明申请

WO1994009517A1 IR-ABSORPTION DEVICE 审中-公开
标题翻译： DEVICE FOR吸收红外辐射
公开(公告)号：WO1994009517A1
公开(公告)日：1994-04-28
申请号：PCT/DE1993000954
申请日：1993-10-07
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , MÜLLER, Michael , GOTTFRIED-GOTTFRIED, Ralf , KÜCK, Heinz
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： H01L31/0236
CPC分类号： H01L31/02164
摘要： The invention concerns an IR-absorption device which can be manufactured using CMOS materials and techniques without any limitations. The absorber structure proposed consists of a lower layer (1) with a low transmission coefficient, a middle layer (2) with a high absorption coefficient and an upper, absorbing, element (3) with a low reflection coefficient for the radiation which is to be absorbed, which is incident from above. The upper element may consist of recesses in the middle layer, the walls of the recesses being coated with metal. The absorber structure is suitable for use in manufacturing inexpensive integrated thermal IR detectors.

5. 发明申请

WO1993020584A1 PROCESS FOR PRODUCING A MONOCRYSTALLINE SILICON LAYER ON AN EMBEDDED DIELECTRIC 审中-公开
标题翻译：工艺制作影片硅单晶掩埋的介电层
公开(公告)号：WO1993020584A1
公开(公告)日：1993-10-14
申请号：PCT/EP1993000734
申请日：1993-03-25
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , GASSEL, Helmut , VOGT, Holger
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： H01L21/76
CPC分类号： H01L21/76251 , H01L21/2007
摘要： A process is disclosed for producing a monocrystalline silicon layer separated by an embedded insulating layer from an underlying silicon substrate. Besides the process steps carried out in a SIMOX process which lead to a SIMOX wafer structure with an embedded SIMOX oxide layer and an overlying silicon layer, the following steps are provided: generating a dielectric layer on the SIMOX silicon wafer and/or a silicon substrate wafer, wafer bonding these wafers so they are bonded to each other by their front sides; applying an etching protection layer on the silicon substrate wafer and etching the back of the SIMOX silicon wafer down to the embedded SIMOX oxide layer.

6. 发明申请

WO1993011561A1 PROCESS FOR MANUFACTURING A POWER INTEGRATED CIRCUIT WITH A VERTICAL POWER COMPONENT 审中-公开
标题翻译：使用垂直电源组件制造功率集成电路的过程
公开(公告)号：WO1993011561A1
公开(公告)日：1993-06-10
申请号：PCT/DE1992000955
申请日：1992-11-12
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , GASSEL, Helmut , MÜTTERLEIN, Bernward , VOGT, Holger , ZIMMER, Günther
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： H01L21/76
CPC分类号： H01L29/7802 , H01L21/76264 , H01L21/76275 , H01L21/76289 , H01L21/764 , H01L27/088 , H01L29/0661
摘要： A power integrated circuit (1) has either a vertical power component (2, 3) and a control circuit (4) for driving the vertical power component (2, 3), or only vertical power components (2, 3). In order to prevent the switching processes of the vertical power component (2, 3) from affecting in an undesirable manner the control circuit (4), an etching stopping layer (12) is applied underneath the semiconductive area where the control circuit (4) is to be produced, during the power integrated circuit (1) manufacturing process. The control circuit (4) and the vertical power component (2, 3) are then produced by usual processing steps, and a front protective layer and a rear masking layer are applied on the wafer. Once the mask is structured in order to create an opening underneath the etching stopping layer (12), the backside of the substrate is etched until the etching stopping layer (12) is reached. Alternatively, once the processing steps for producing the vertical power components (2, 3) have been carried out and once a lateral insulating layer (13) has been applied between the vertical power components, a front protective layer and a rear masking layer are produced, then the rear masking layer is provided with a recess underneath the lateral insulating layer (13) through which the backside of the substrate is etched until the lateral insulating layer is reached.
摘要翻译：功率集成电路（1）具有垂直功率分量（2,3）和用于驱动垂直功率分量（2,3）的控制电路（4），或仅具有垂直功率分量（2,3）。为了防止垂直功率分量（2,3）的切换过程以不期望的方式影响控制电路（4），在半导体区域的下方施加蚀刻停止层（12），其中控制电路（4）是在电力集成电路（1）的制造过程中生产的。然后通过常规处理步骤产生控制电路（4）和垂直功率分量（2,3），并且在晶片上施加前保护层和后掩蔽层。一旦掩模被构造以在蚀刻停止层（12）下面形成开口，则蚀刻基板的背面直到到达蚀刻停止层（12）。或者，一旦已经执行用于产生垂直功率部件（2,3）的处理步骤，并且一旦横向绝缘层（13）已经施加在垂直功率部件之间，则产生前保护层和后掩模层那么后掩蔽层在横向绝缘层（13）的下面设置有凹槽，通过该凹槽蚀刻衬底的背面，直到达到横向绝缘层。

7. 发明申请

WO1991013463A1 PROCESS FOR PRODUCING AN INSULATED MONOCRYSTALLINE SILICON ISLAND 审中-公开
标题翻译：生产绝缘单晶硅岛的工艺
公开(公告)号：WO1991013463A1
公开(公告)日：1991-09-05
申请号：PCT/DE1991000162
申请日：1991-02-26
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , VOGT, Holger
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： H01L21/76
CPC分类号： H01L21/26533 , H01L21/76264 , H01L21/76267 , H01L21/76281 , H01L21/76283 , H01L21/76286 , H01L21/76289
摘要： A process for improving the electrical and thermal insulation of a silicon island comprises the following steps: implantation of oxygen in a highly doped, monocrystalline silicon region (1; 4a) in order to produce an embedded, insulated SiO2 layer (2), the highly doped, monocrystalline silicon region being produced by high doping of a layer near the surface of a low-doped substrate by means of ion implantation and subsequent annealing, the ion implantation being carried out before the production of the embedded, insulated SiO2 layer (2) by implantation of oxygen; annealing of the laminar structure (1, 2, 3) produced; deposition of a monocrystalline silicon epitaxial layer (4, 4a, 4b) the doping of which is low in comparison with that of the highly doped silicon region; production of a trench etching mask (5, 6, 7) containing a doping substance diffusion barrier (6) on the silicon epitaxial layer (4, 4b); definition of the trench (8) by means of photolithography; etching of the trench (8) as far as the embedded, insulated SiO2 layer (2), which acts as an etching stop mask; introduction of a high doping into the trench side walls (9); insulation (10) of the trench walls (9); filling (11) in of the trench (8).

8. 发明申请

WO1992012541A1 INTEGRATED POWER SWITCH STRUCTURE 审中-公开
标题翻译：集成式电源开关结构
公开(公告)号：WO1992012541A1
公开(公告)日：1992-07-23
申请号：PCT/DE1992000011
申请日：1992-01-07
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , MÜTTERLEIN, Bernward , VOGT, Holger
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： H01L29/74
CPC分类号： H01L29/7455 , H01L29/0649 , H01L29/749
摘要： An integrated power switch structure comprises a lateral MOS transistor (3) and a lateral or vertical thyristor (2). The drain-source path of the lateral MOS transistor (3) is in series with the cathode-anode path of the thyristor (2). In order to ensure that the power switch structure reliably switches on and off with great dielectric strength and low switch-on resistance, according to the invention at least the source electrode of the lateral MOS transistor (3) is insulated against the substrate (7) via an embedded oxide layer (8).

9. 发明申请

WO1990009679A1 POWER CIRCUIT WITH AN INTEGRATED CMOS OR BIPOLAR CIRCUIT AND PROCESS FOR MANUFACTURING AN INTEGRATED CIRCUIT 审中-公开
标题翻译：具有集成CMOS或双极电路的功率电路和用于制造集成电路的工艺
公开(公告)号：WO1990009679A1
公开(公告)日：1990-08-23
申请号：PCT/EP1989001505
申请日：1989-12-08
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , VOGT, Holger
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： H01L27/08
CPC分类号： H01L21/76243 , H01L27/0623 , H01L27/088 , H01L29/0619 , H01L29/0653 , H01L29/7803 , H01L29/7811
摘要： In a power circuit with integrated CMOS or bipolar circuit which is arranged on a semiconductor island insulated by a buried insulation layer, improved electric strength and minimal crosstalk is achieved if the buried insulation layer lies in a semiconductor region whose doping is opposite to that in the semiconductor material adjacent to the semiconductor region.

10. 发明申请

WO1994009176A1 DEVICE FOR PLASMA-SUPPORTED ELECTRON BEAM HIGH-RATE VAPOUR DEPOSIITION 审中-公开
标题翻译： DEVICE等离子辅助电子HOCHRATEBEDAMPFEN
公开(公告)号：WO1994009176A1
公开(公告)日：1994-04-28
申请号：PCT/DE1993000750
申请日：1993-08-18
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ... , NEUMANN, Manfred , SCHILLER, Siegfried , MORGNER, Henry
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ...
IPC分类号： C23C14/32
CPC分类号： C23C14/10 , C23C14/32 , H01J37/3053 , H01J37/3266 , H01J2237/3137
摘要： It is known that improved coating properties can be obtained by plasma action in vacuum deposition, especially by vaporisation. Substantially higher coating rates can be attained in vapour deposition, but, with high plasma densities, they result in excessive scattering of the electron beam and reduce the power density. According to the invention, a plasma source, preferably a hollow cathode arc source, is arranged in the immediate vicinity of the substrate. Between the evaporator and the substrate there is a device for generating a magnetic field so that the region of high plasma density is separated from the evaporator and the electron beam by the magnetic field. The boundary field lines of this magnetic field run along an arc curving with respect to the substrate.

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