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1. 发明申请

WO2012030488A1 TWO-AXIS MAGNETIC FIELD SENSOR HAVING REDUCED COMPENSATION ANGLE FOR ZERO OFFSET 审中-公开
标题翻译：具有减速补偿角度的双轴磁场传感器用于零偏移
公开(公告)号：WO2012030488A1
公开(公告)日：2012-03-08
申请号：PCT/US2011/047113
申请日：2011-08-09
申请人： EVERSPIN TECHNOLOGIES, INC. , SUN, Jijun , MATHER, Phillip , PIETAMBARAM, Srinivas , SLAUGHTER, Jon , WHIG, Renu , RIZZO, Nicholas
发明人： SUN, Jijun , MATHER, Phillip , PIETAMBARAM, Srinivas , SLAUGHTER, Jon , WHIG, Renu , RIZZO, Nicholas
IPC分类号： G11B5/33
CPC分类号： H01L43/10 , G01R33/098 , H01L43/12 , Y10T29/49117
摘要： A sensor and fabrication process are provided for forming reference layers with substantially orthogonal magnetization directions having zero offset with a small compensation angle. An exemplary embodiment includes a sensor layer stack of a magnetoresistive thin-film based magnetic field sensor, the sensor layer stack comprising a pinning layer; a pinned layer including a layer of amorphous material over the pinning layer, and a first layer of crystalline material over the layer of amorphous material; a nonmagnetic coupling layer over the pinned layer; a fixed layer over the nonmagnetic coupling layer; a tunnel barrier over the fixed layer; and a sense layer over the nonmagnetic intermediate layer. Another embodiment includes a sensor layer stack where a pinned layer including two crystalline layers sepatared by a amorphous layer.
摘要翻译：提供传感器和制造工艺，用于形成具有基本上正交的磁化方向的参考层，具有零偏移并且具有小的补偿角。示例性实施例包括基于磁阻薄膜的磁场传感器的传感器层堆叠，传感器层堆叠包括钉扎层; 包括在钉扎层上的无定形材料层的钉扎层和在非晶材料层上的第一层结晶材料; 在被钉扎层上的非磁性耦合层; 在非磁耦合层上的固定层; 固定层上的隧道势垒; 以及在非磁性中间层上的感测层。另一个实施例包括传感器层堆叠，其中包括由非晶层隔开的两个结晶层的钉扎层。

2. 发明申请

WO2011038343A1 THREE AXIS MAGNETIC FIELD SENSOR 审中-公开
标题翻译：三轴磁场传感器
公开(公告)号：WO2011038343A1
公开(公告)日：2011-03-31
申请号：PCT/US2010/050398
申请日：2010-09-27
申请人： EVERSPIN TECHNOLOGIES, INC. , MATHER, Phillip , SLAUGHTER, Jon , RIZZO, Nicholas
发明人： MATHER, Phillip , SLAUGHTER, Jon , RIZZO, Nicholas
IPC分类号： G11C5/12
CPC分类号： H01L27/22 , B82Y25/00 , G01R33/093 , H01L43/08
摘要： Three bridge circuits (101, 111, 121), each include magnetoresistive sensors coupled as a Wheatstone bridge (100) to sense a magnetic field (160) in three orthogonal directions (110, 120, 130) that are set with a single pinning material deposition and bulk wafer setting procedure. One of the three bridge circuits (121) includes a first magnetoresistive sensor (141) comprising a first sensing element (122) disposed on a pinned layer (126), the first sensing element (122) having first and second edges and first and second sides, and a first flux guide (132) disposed non-parallel to the first side of the substrate and having an end that is proximate to the first edge and on the first side of the first sensing element (122). An optional second flux guide (136) may be disposed non-parallel to the first side of the substrate and having an end that is proximate to the second edge and the second side of the first sensing element (122).
摘要翻译：三桥电路（101,111,121）各自包括耦合为惠斯通电桥（100）的磁阻传感器，用于在三个垂直方向（110,120,130）上感测磁场（160），所述三个正交方向（110,120,130）设置有单个钉扎材料沉积和体晶片设置程序。三个桥接电路（121）中的一个包括第一磁阻传感器（141），其包括设置在被钉扎层（126）上的第一感测元件（122），第一感测元件（122）具有第一和第二边缘以及第一和第二侧面，以及第一磁通引导件（132），其布置成不平行于衬底的第一侧面并且具有靠近第一边缘并且在第一感测元件（122）的第一侧上的端部。可选的第二磁通引导件136可以布置成不平行于衬底的第一侧并且具有靠近第一感测元件（122）的第二边缘和第二侧的端部。

3. 发明申请

WO2013066905A1 APPARATUS AND METHOD FOR RESET AND STABILIZATION CONTROL OF A MAGNETIC SENSOR 审中-公开
标题翻译：磁传感器复位和稳定控制的装置和方法
公开(公告)号：WO2013066905A1
公开(公告)日：2013-05-10
申请号：PCT/US2012/062638
申请日：2012-10-31
申请人： EVERSPIN TECHNOLOGIES INC. , LIU, Lianjun , MATHER, Phillip , SLAUGHTER, Jon
发明人： LIU, Lianjun , MATHER, Phillip , SLAUGHTER, Jon
IPC分类号： H01L29/82
CPC分类号： G01R33/0029 , G01R33/0041 , G01R33/04 , G01R33/098
摘要： A magnitude and direction of at least one of a reset current and a second stabilization current (that produces a reset field and a second stabilization field, respectively) is determined that, when applied to an array of magnetic sense elements, minimizes the total required stabilization field and reset field during the operation of the magnetic sensor and the measurement of the external field. Therefore, the low field sensor operates optimally (with the highest sensitivity and the lowest power consumption) around the fixed external field operating point. The fixed external field is created by other components in the sensor device housing (such as speaker magnets) which have a high but static field with respect to the low (earth's) magnetic field that describes orientation information.
摘要翻译：确定复位电流和第二稳定电流（分别产生复位场和第二稳定场）中的至少一个的幅度和方向，当应用于磁感测元件的阵列时，使总要求的稳定性最小化在磁传感器运行期间的场和复位场以及外场测量。因此，低场传感器在固定的外场操作点周围最佳地运行（具有最高的灵敏度和最低的功耗）。固定的外部场是由传感器装置外壳（例如扬声器磁体）中的其它部件产生的，这些部件相对于描述取向信息的低（地球）磁场具有高但静止的场。

4. 发明申请

WO2011079121A1 METHOD OF VERTICALLY MOUNTING AN INTEGRATED CIRCUIT 审中-公开
标题翻译：垂直安装集成电路的方法
公开(公告)号：WO2011079121A1
公开(公告)日：2011-06-30
申请号：PCT/US2010/061556
申请日：2010-12-21
申请人： EVERSPIN TECHNOLOGIES, INC. , SLAUGHTER, Jon , MATHER, Phillip
发明人： SLAUGHTER, Jon , MATHER, Phillip
IPC分类号： H01L23/02
CPC分类号： H01L27/22 , B82Y25/00 , G01R33/093 , G01R33/098 , H01L24/03 , H01L24/06 , H01L2224/0401 , H01L2224/05554 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01047 , H01L2924/01073 , H01L2924/01075 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14
摘要： A method of mounting a first integrated circuit (102, 500, 704) on a circuit board (300, 700) or a second integrated circuit (706), the first Integrated circuit (102, 500, 704) formed over a substrate (104) and having a surface (119) opposed to the substrate (104) and a side (122, 530, 930) substantially orthogonal to the surface (119), and Including a conductive element (116, 117, 118, 522, 524, 526, 528, 528', 528") coupled to circuitry (102, 500, 704) and lormed within a dielectric material (120, 518), the circuit board or the second integrated circuit including a contact point (304, 306, 314), the method including singulating (1104) the first Integrated circuit to expose the conductive element (116,117,118,522,524,526,528,52β',528') on the side (222,630, 1030), and mounting (1108) the first integrated circuit on a circuit board or a second integrated circuit by aligning the conductive element exposed on the side to make electrical contact.
摘要翻译：一种将第一集成电路（102,500,704）安装在电路板（300,700）或第二集成电路（706）上的方法，所述第一集成电路（102,500,604）形成在衬底（104）上），并且具有与所述基板（104）相对的表面（119）和与所述表面（119）基本正交的侧面（122,530,930），并且包括导电元件（116,117,128,522,524）耦合到电路（102,50,704）并且在电介质材料（120,518）内延伸的电路板，所述电路板或所述第二集成电路包括接触点（304,306,314）），所述方法包括将所述第一集成电路（1104）单独化以暴露所述一侧（222,630,1030）上的所述导电元件（116,117,118,522,524,526,528,52β'，528'），并将所述第一集成电路安装（1108）在电路板上，或第二集成电路，通过对准暴露在侧面上的导电元件以进行电接触。

5. 发明申请

WO2009137802A1 TWO-AXIS MAGNETIC FIELD SENSOR WITH MULTIPLE PINNING DIRECTIONS AND METHOD TO PRODUCE THE SENSOR 审中-公开
标题翻译：具有多个固定方向的双轴磁场传感器和生产传感器的方法
公开(公告)号：WO2009137802A1
公开(公告)日：2009-11-12
申请号：PCT/US2009/043354
申请日：2009-05-08
申请人： EVERSPIN TECHNOLOGIES, INC. , ENGEL, Bradley , MATHER, Phillip , SLAUGHTER, Jon
发明人： ENGEL, Bradley , MATHER, Phillip , SLAUGHTER, Jon
IPC分类号： H01L27/22 , H01L43/08 , H01L43/12 , G01R33/09 , H01F41/30 , H01F41/34 , H01F10/32
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G01R33/093 , H01F10/3272 , H01F41/304 , H01F41/308 , H01L27/22
摘要： A fabrication process and apparatus provide a high-performance magnetic field sensor (200) from two differential sensor configurations (201, 211) which require only two distinct pinning axes (206, 216) which are formed from a single reference layer (60) that is etched into high aspect ratio shapes (62, 63) with their long axes drawn with different orientations so that, upon treating the reference layers with a properly aligned saturating field (90) and then removing the saturating field, the high aspect ratio patterns provide a shape anisotropy that forces the magnetization of each patterned shape (62, 63) to relax along its respective desired axis. Upon heating and cooling, the ferromagnetic film is pinned in the different desired directions.
摘要翻译：制造工艺和装置从两个差异传感器配置（201,211）提供高性能磁场传感器（200），其仅需要由单个参考层（60）形成的两个不同的钉扎轴（206,216），所述单个参考层被蚀刻成高纵横比形状（62,63），其长轴以不同取向绘制，使得在用适当对齐的饱和场（90）处理参考层，然后去除饱和场时，高纵横比图案提供使得各图案形状（62,63）的磁化强制沿其各自期望的轴松弛的形状各向异性。在加热和冷却时，铁磁膜被固定在不同的期望方向上。

6. 发明申请

WO2012106357A1 FABRICATION PROCESS AND LAYOUT FOR MAGNETIC SENSOR ARRAYS 审中-公开
标题翻译：磁传感器阵列的制造工艺和布局
公开(公告)号：WO2012106357A1
公开(公告)日：2012-08-09
申请号：PCT/US2012/023363
申请日：2012-01-31
申请人： EVERSPIN TECHNOLOGIES, INC. , MATHER, Phillip , SLAUGHTER, Jon
发明人： MATHER, Phillip , SLAUGHTER, Jon
IPC分类号： G11B5/33
CPC分类号： H01L43/02 , G01R33/098 , H01L27/22 , H01L43/08 , H01L43/12
摘要： A magnetic sensor includes a plurality of groups, each group comprising a plurality of magnetic tunnel junction (MTJ) devices having a plurality of conductors configured to couple the MTJ devices within one group in parallel and the groups in series enabling independent optimization of the material resistance area (RA) of the MTJ and setting total device resistance so that the total bridge resistance is not so high that Johnson noise becomes a signal limiting concern, and yet not so low that CMOS elements may diminish the read signal. Alternatively, the magnetic tunnel junction devices within each of at least two groups in series and the at least two groups in parallel resulting in the individual configuration of the electrical connection path and the magnetic reference direction of the reference layer, leading to independent optimization of both functions, and more freedom in device design and layout. The X and Y pitch of the sense elements are arranged such that the line segment that stabilizes, for example, the right side of one sense element; also stabilizes the left side of the adjacent sense element.
摘要翻译：磁传感器包括多个组，每个组包括多个磁隧道结（MTJ）装置，其具有多个导体，其被配置成并联连接一组内的MTJ装置，并且该组可串联实现材料电阻的独立优化面积（RA），并设置总的器件电阻，使得总的桥接电阻不是很高，以至于Johnson噪声成为限制信号的关键，而不是那么低，使得CMOS元件可能会削弱读取信号。或者，串联的至少两组中的每一个中的磁隧道结装置和并联的至少两个组，导致电连接路径的单独配置和参考层的磁参考方向，导致两者的独立优化功能，以及更多设备设计和布局自由。感测元件的X和Y间距被布置成使得例如稳定一个感测元件的右侧的线段; 也稳定了相邻感测元件的左侧。

7. 发明申请

WO2011123454A1 PROCESS INTEGRATION OF A SINGLE CHIP THREE AXIS MAGNETIC FIELD SENSOR 审中-公开
标题翻译：单芯片三轴磁场传感器的工艺集成
公开(公告)号：WO2011123454A1
公开(公告)日：2011-10-06
申请号：PCT/US2011/030361
申请日：2011-03-29
申请人： EVERSPIN TECHNOLOGIES, INC. , WHIG, Renu , MATHER, Phillip , SMITH, Kenneth , AGGARWAL, Sanjeev , SLAUGHTER, Jon
发明人： WHIG, Renu , MATHER, Phillip , SMITH, Kenneth , AGGARWAL, Sanjeev , SLAUGHTER, Jon
IPC分类号： G01R33/02
CPC分类号： H01L43/12 , B82Y25/00 , G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/098 , H01L27/22 , H01L43/02 , H01L43/08
摘要： A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a "Z" axis magnetic field onto sensors orientated in the XY plane.
摘要翻译：半导体工艺集成了三个桥接电路，每个电路包括在单个芯片上作为惠斯登电桥耦合的磁阻传感器，以在三个正交方向上感测磁场。该过程包括形成磁阻传感器的各种沉积和蚀刻步骤以及在三个桥接电路中的一个上的多个通量引导器，用于将“Z”轴磁场传送到在XY平面中定向的传感器上。

8. 发明申请

WO2010126722A1 TWO-AXIS MAGNETIC FIELD SENSOR WITH SUBSTANTIALLY ORTHOGONAL PINNING DIRECTIONS 审中-公开
标题翻译：双轴磁场传感器，具有极大的正交螺线方向
公开(公告)号：WO2010126722A1
公开(公告)日：2010-11-04
申请号：PCT/US2010/031378
申请日：2010-04-16
申请人： EVERSPIN TECHNOLOGIES, INC. , MATHER, Phillip , SLAUGHTER, Jon
发明人： MATHER, Phillip , SLAUGHTER, Jon
IPC分类号： G11B5/33
CPC分类号： G01R31/318357 , B82Y25/00 , G01R33/072 , G01R33/093 , G01R33/098 , Y10T29/4902
摘要： A fabrication process and apparatus provide a high-performance magnetic field sensor (200) from two differential sensor configurations (502, 512) requiring only two distinct pinning axes formed from a single reference layer that is etched into high aspect ratio shapes with their long axes (506, 516) drawn with different oπentations so that the high aspect ratio patterns provide a shape anisotropy that forces the magnetization of each patterned shape to relax along its respective desired axis. Upon heating and cooling, the ferromagnetic film is pinned in the different desired directions by one of 1) tailoring the intrinsic anisotropy of the reference layer duπng the depositing step, 2) forming a long axes of one of the patterned shapes at a non-orthogonal angle to the long axes of the other patterned shape when etched, or 3) applying a compensating field when pinning the reference layers.
摘要翻译：制造工艺和装置从两个差分传感器配置（502,512）提供高性能磁场传感器（200），仅需要由单个参考层形成的两个不同的钉扎轴，该单个参考层被刻蚀成高长宽比形状，其长轴（506,516），其具有不同的凸度，使得高纵横比图案提供形状各向异性，其迫使每个图案形状的磁化沿其相应的期望轴线松弛。在加热和冷却时，铁磁膜通过以下之一来固定在不同的期望方向：1）调整沉积步骤的参考层的固有各向异性，2）以非正交的方式形成一个图案形状的长轴当蚀刻时与另一图案形状的长轴成角度，或3）在固定参考层时施加补偿场。

9. 发明申请

WO2013130404A3 AN APPARATUS AND METHOD FOR RESETTING A Z-AXIS SENSOR FLUX GUIDE 审中-公开
公开(公告)号：WO2013130404A3
公开(公告)日：2013-09-06
申请号：PCT/US2013/027653
申请日：2013-02-25
申请人： LIU, Lianjun , MATHER, Phillip , EVERSPIN TECHNOLOGIES, INC.
发明人： LIU, Lianjun , MATHER, Phillip
IPC分类号： G01R33/02
摘要： A method and apparatus eliminate magnetic domain walls in a flux guide by applying, either simultaneously or sequentially, a current pulse along serially positioned reset lines to create a magnetic field along the flux guide, thereby removing the magnetic domain walls. By applying the current pulses in parallel and stepping through pairs of shorter reset lines segments via switches, less voltage is required.

10. 发明申请

WO2009049122A1 MAGNETIC ELEMENT HAVING REDUCED CURRENT DENSITY 审中-公开
标题翻译：具有降低电流密度的磁性元件
公开(公告)号：WO2009049122A1
公开(公告)日：2009-04-16
申请号：PCT/US2008/079471
申请日：2008-10-10
申请人： EVERSPIN TECHNOLOGIES, INC. , RIZZO, Nicholas , MATHER, Phillip
发明人： RIZZO, Nicholas , MATHER, Phillip
IPC分类号： G11C11/16
CPC分类号： G11C11/1675 , G11C11/161
摘要： A memory device includes a fixed magnetic layer, a tunnel barrier layer over the fixed magnetic layer, and a free magnetic structure formed over the tunnel barrier layer, wherein the free magnetic structure has layers of sub-layers that are weakly magnetically coupled. Thus, a low programming voltage can be used to avoid tunnel barrier breakdown, and a small pass transistor can be used to save die real estate.
摘要翻译：存储器件包括固定磁性层，固定磁性层上的隧道势垒层和形成在隧道势垒层上的自由磁结构，其中自由磁结构具有弱磁耦合的子层层。因此，可以使用低编程电压来避免隧道势垒击穿，并且可以使用小通道晶体管来节省管芯空间。

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