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1. 发明申请

WO2010030329A1 HIGH GAIN READ CIRCUIT FOR 3D INTEGRATED PIXEL 审中-公开
标题翻译：用于3D集成像素的高增益读取电路
公开(公告)号：WO2010030329A1
公开(公告)日：2010-03-18
申请号：PCT/US2009/004989
申请日：2009-09-04
申请人： EASTMAN KODAK COMPANY , MCCARTEN, John P. , SUMMA, Joseph R. , ANDERSON, Todd , TIVARUS, Christian Alexandru
发明人： MCCARTEN, John P. , SUMMA, Joseph R. , ANDERSON, Todd , TIVARUS, Christian Alexandru
IPC分类号： H01L27/146
CPC分类号： H01L27/14634 , H01L27/14609 , H01L27/14636 , H01L27/14641
摘要： An image sensor includes (a) a first wafer having (i) a photosensitive area; (ii) a charge-to-voltage conversion region; (b) a second wafer having (i) a first amplifier that receives a signal from the charge-to-voltage conversion region; (c) an electrical interconnect connecting the charge-to-voltage conversion region to an input of the amplifier; (d) an electrically biased shield at least partially enclosing at least a portion of the electrical interconnect.
摘要翻译：图像传感器包括（a）第一晶片，具有（i）感光区域; （ii）电荷 - 电压转换区域; （b）第二晶片，具有（i）第一放大器，其接收来自所述电荷/电压转换区域的信号; （c）将电荷 - 电压转换区域连接到放大器的输入端的电互连; （d）至少部分地包围电互连的至少一部分的电偏置屏蔽。

2. 发明申请

WO2010151324A1 IMAGE SENSORS HAVING FRONTSIDE AND BACKSIDE PHOTODETECTORS 审中-公开
标题翻译：具有FRONTSIDE和背光源的图像传感器
公开(公告)号：WO2010151324A1
公开(公告)日：2010-12-29
申请号：PCT/US2010/001813
申请日：2010-06-24
申请人： EASTMAN KODAK COMPANY , MCCARTEN, John P. , TIVARUS, Christian Alexandru , SUMMA, Joseph R.
发明人： MCCARTEN, John P. , TIVARUS, Christian Alexandru , SUMMA, Joseph R.
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/14632 , H01L27/1464 , H01L27/14647 , H01L27/14687 , H01L27/14689 , H01L31/035272
摘要： A back-illuminated image sensor ( 306) includes a sensor layer (702) of a first conductivity type having a frontside (704) and a backside (706) opposite the frontside. One or more frontside regions (726, 728, 730) of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region (740) of the second conductivity type is formed in the backside (706) of the sensor layer. A plurality of frontside photodetectors (718f, 72Of, 722f ) of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors (718b, 720b, 722b) of the first conductivity type separate from the plurality of frontside photodetectors are formed in the sensor layer contiguous to portions of the region of the second conductivity type. A voltage terminal (732) is disposed on the frontside of the sensor layer. One or more connecting regions (742, 744) of the second conductivity type are disposed in respective portions of the sensor layer between the voltage terminal and the backside region for electrically connecting the voltage terminal to the backside region.
摘要翻译：背照式图像传感器（306）包括具有前侧（704）的第一导电类型的传感器层（702）和与前侧相对的背面（706）。在传感器层的前侧的至少一部分中形成有第二导电类型的一个或多个前侧区域（726,728,730）。第二导电类型的背面区域（740）形成在传感器层的背面（706）中。第一导电类型的多个前端光电探测器（718f，720f，722f）设置在传感器层中。在与第二导电类型的区域的部分相邻的传感器层中形成与多个前端光电检测器分离的第一导电类型的不同的多个背面光电检测器（718b，720b，722b）。电压端子（732）设置在传感器层的前侧。第二导电类型的一个或多个连接区域（742,744）设置在电压端子和背面区域之间的传感器层的相应部分中，用于将电压端子电连接到背面区域。

3. 发明申请

WO2010074716A1 ULTRAVIOLET LIGHT FILTER LAYER IN IMAGE SENSORS 审中-公开
标题翻译：超声波滤光片在图像传感器中的应用
公开(公告)号：WO2010074716A1
公开(公告)日：2010-07-01
申请号：PCT/US2009/006486
申请日：2009-12-10
申请人： EASTMAN KODAK COMPANY , TIVARUS, Christian Alexandru , MCCARTEN, John P. , SUMMA, Joseph R.
发明人： TIVARUS, Christian Alexandru , MCCARTEN, John P. , SUMMA, Joseph R.
IPC分类号： H01L27/146 , H01L23/552 , G02B5/20 , H01L31/0232
CPC分类号： G02B5/208 , H01L27/1462 , H01L27/14621 , H01L27/1464 , H01L27/14689 , H01L31/02164 , H01L31/0232
摘要： An image sensor (500) includes one or more ultraviolet (UV) light filter layers (520) disposed between an insulating layer (518) and a color filter array (CFA) layer (522) The one or more UV light filter layers reflect or absorb UV light while transmitting visible light.
摘要翻译：图像传感器（500）包括设置在绝缘层（518）和滤色器阵列（CFA）层（522）之间的一个或多个紫外（UV）滤光器层（520）。一个或多个UV光滤光器层反射或在透过可见光的同时吸收紫外线。

4. 发明申请

WO2009117046A1 STACKED IMAGE SENSOR WITH SHARED DIFFUSION REGIONS 审中-公开
标题翻译：具有共享扩展区域的堆叠图像传感器
公开(公告)号：WO2009117046A1
公开(公告)日：2009-09-24
申请号：PCT/US2009/000892
申请日：2009-02-12
申请人： EASTMAN KODAK COMPANY , ANDERSON, Todd Jeffery , MCCARTEN, John P. , SUMMA, Joseph R. , TIVARUS, Cristian Alexandru , COMPTON, John Thomas
发明人： ANDERSON, Todd Jeffery , MCCARTEN, John P. , SUMMA, Joseph R. , TIVARUS, Cristian Alexandru , COMPTON, John Thomas
IPC分类号： H01L27/146
CPC分类号： H01L27/14634 , G02B3/0056 , G02B5/201 , H01L27/14603 , H01L27/14621 , H01L27/14636 , H01L27/14645 , H01L27/1469 , H04N5/37457 , H04N9/045
摘要： A CMOS image sensor (100) or other type of image sensor comprises a sensor wafer (106) and an underlying circuit wafer (108) The sensor wafer comprises a plurality of photosensitive elements (Al, A3, B4, C2, Dl, D3) arranged in respective positions of a two-dimensional array of positions in which a subset of the array positions do not include photosensitive elements but instead include diffusion regions (103A,103D) each of which is shared by two or more of the photosensitive elements. The sensor wafer is interconnected with the circuit wafer utilizing a plurality of inter-wafer interconnects (104A,104D) coupled to respective ones of the shared diffusion regions in respective ones of the array positions that do not include photosensitive elements. The image sensor may be implemented in a digital camera or other type of image capture device.
摘要翻译： CMOS图像传感器（100）或其他类型的图像传感器包括传感器晶片（106）和底层电路晶片（108）。传感器晶片包括多个感光元件（A1，A3，B4，C2，D1，D3）布置在其中阵列位置的子集不包括光敏元件的位置的二维阵列的相应位置，而是包括每个由两个或更多个感光元件共享的扩散区域（103A，103D）。传感器晶片与电路晶片互连，利用多个晶片间互连（104A，104D），其耦合到不包括感光元件的相应阵列位置中的相应一个共享扩散区。图像传感器可以在数字照相机或其他类型的图像捕获装置中实现。

5. 发明申请

WO2010151288A1 IMAGE SENSORS HAVING FRONTSIDE AND BACKSIDE PHOTODETECTORS 审中-公开
标题翻译：具有FRONTSIDE和背光源的图像传感器
公开(公告)号：WO2010151288A1
公开(公告)日：2010-12-29
申请号：PCT/US2010/001679
申请日：2010-06-11
申请人： EASTMAN KODAK COMPANY , MCCARTEN, John P. , TIVARUS, Cristian Alexandru , SUMMA, Joseph R.
发明人： MCCARTEN, John P. , TIVARUS, Cristian Alexandru , SUMMA, Joseph R.
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14605 , H01L27/14632 , H01L27/1464 , H01L27/14647 , H01L27/14687 , H01L27/14689 , H01L31/035272
摘要： A back-illuminated image sensor includes a sensor layer (702) of a first conductivity type having a frontside (704) and a backside (706) opposite the front side. An insulating layer (708) is disposed over the backside. A circuit layer (710) is formed adjacent to the front side such that the sensor layer is positioned between the circuit layer and the insulating layer. One or more front side regions (728) of a second conductivity type are formed in at least a portion of the front side of the sensor layer. A backside region (740) of the second conductivity type is formed in the backside of the sensor layer. A plurality of front side photodetectors (718f, 720f, 722f) of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors (718b, 720b, 722b) of the first conductivity type separate from the plurality of front side photodetectors is formed in the sensor layer contiguous to portions of the backside region of the second conductivity type.
摘要翻译：背照式图像传感器包括具有前侧（704）和与前侧相对的背面（706）的第一导电类型的传感器层（702）。绝缘层（708）设置在背面上。电路层（710）邻近前侧形成，使得传感器层位于电路层和绝缘层之间。第二导电类型的一个或多个前侧区域（728）形成在传感器层的前侧的至少一部分中。在传感器层的背面形成有第二导电类型的背面区域（740）。第一导电类型的多个前侧光电检测器（718f，720f，722f）设置在传感器层中。在与第二导电类型的背侧区域的部分相邻的传感器层中形成有与多个前侧光电检测器分离的第一导电类型的不同的多个背面光电检测器（718b，720b，722b）。

6. 发明申请

WO2010151287A1 ALIGNING ELEMENTS IN BACK-ILLUMINATED IMAGE SENSORS 审中-公开
标题翻译：在后照明图像传感器中对准元件
公开(公告)号：WO2010151287A1
公开(公告)日：2010-12-29
申请号：PCT/US2010/001678
申请日：2010-06-11
申请人： EASTMAN KODAK COMPANY , MCCARTEN, John P. , TIVARUS, Cristian Alexandru , SUMMA, Joseph R.
发明人： MCCARTEN, John P. , TIVARUS, Cristian Alexandru , SUMMA, Joseph R.
IPC分类号： H01L27/146
CPC分类号： H01L27/14687 , H01L27/1464
摘要： A back-illuminated image sensor includes a sensor layer disposed between a circuit layer adjacent to a frontside of the sensor layer and a layer disposed on a backside of the sensor layer. One or more first alignment marks are formed in a layer in the circuit layer. A masking layer is aligned to the one or more first alignment marks. The masking layer includes openings that define locations for one or more second alignment marks. The one or more second alignment marks are then formed in or through the layer disposed on a backside of a sensor layer. One or more elements are formed in or on the backside of the sensor layer. The one or more elements are aligned to one or more second alignment marks.
摘要翻译：背照式图像传感器包括设置在与传感器层的前侧相邻的电路层与设置在传感器层的背面之间的层之间的传感器层。一个或多个第一对准标记形成在电路层中的一层中。掩模层与一个或多个第一对准标记对准。掩模层包括限定一个或多个第二对准标记的位置的开口。一个或多个第二对准标记然后形成在或设置在传感器层的背面上的层中。一个或多个元件形成在传感器层的背面中或其上。一个或多个元件与一个或多个第二对准标记对准。

7. 发明申请

WO2010077315A1 BACK ILLUMINATED SENSOR WITH LOW CROSSTALK 审中-公开
标题翻译：背面照明传感器与低CROSSTALK
公开(公告)号：WO2010077315A1
公开(公告)日：2010-07-08
申请号：PCT/US2009/006593
申请日：2009-12-16
申请人： EASTMAN KODAK COMPANY , MCCARTEN, John P. , SUMMA, Joseph R. , TIVARUS, Cristian Alexandru
发明人： MCCARTEN, John P. , SUMMA, Joseph R. , TIVARUS, Cristian Alexandru
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L27/1463 , H01L27/1464 , H01L27/14656
摘要： A back-illuminated image sensor includes a sensor layer having a frontside and a backside opposite the frontside. An insulating layer is situated adjacent the backside and a circuit layer is adjacent the frontside. A plurality of photodetectors of a first type conductivity convert light incident on the backside into photo-generated charges. The photodetectors are disposed in the sensor layer adjacent the frontside. A region of a second type conductivity is formed in at least a portion of the sensor layer adjacent the frontside and is connected to a voltage terminal for biasing the second type conductivity region at a predetermined voltage. A well of the second type conductivity is formed in the sensor layer adjacent the backside. Trench isolations in the sensor layer start at the frontside and extend beyond the depletion region of the photodiodes.
摘要翻译：背照式图像传感器包括具有前侧和与前侧相对的背面的传感器层。绝缘层位于背面附近，并且电路层邻近前侧。多个第一类型的光电检测器将入射到背面的光转换为光生电荷。光电检测器设置在邻近前侧的传感器层中。在邻近前侧的传感器层的至少一部分中形成有第二导电类型的区域，并连接到用于以预定电压偏置第二类型导电区域的电压端子。第二类电导率阱形成在靠近背面的传感器层中。传感器层中的沟槽隔离从前侧开始并延伸超过光电二极管的耗尽区。

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