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1. 发明申请

WO2009123693A1 ACTIVE PIXEL SENSOR HAVING TWO WAFERS 审中-公开
标题翻译：具有两个波形的主动像素传感器
公开(公告)号：WO2009123693A1
公开(公告)日：2009-10-08
申请号：PCT/US2009/001951
申请日：2009-03-27
申请人： EASTMAN KODAK COMPANY , MCCARTEN, John, P. , SUMMA, Joseph, R. , GUIDASH, Robert, Michael , ANDERSON, Todd, Jeffery
发明人： MCCARTEN, John, P. , SUMMA, Joseph, R. , GUIDASH, Robert, Michael , ANDERSON, Todd, Jeffery
IPC分类号： H01L27/146
CPC分类号： H01L27/14634 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14687 , H01L27/1469
摘要： A vertically-integrated image sensor (400) includes a sensor wafer (402) connected to a support circuit wafer (404). Each pixel region on the sensor wafer includes a photodetector (302), a charge-to-voltage conversion mechanism (306), a transfer mechanism (304) for transferring charge from the photodetetor to the charge-to-voltage conversion mechanism, and a reset mechanism (308) for discharging the charge-to-voltage conversion mechanism. The support circuit wafer includes an amplifier (312) and other support circuitry for each pixel region on the sensor wafer. An inter-wafer connector (320) directly connects each charge-to-voltage mechanism on the sensor wafer to a respective gate (416) to an amplifier on the support circuit wafer.
摘要翻译：垂直集成的图像传感器（400）包括连接到支撑电路晶片（404）的传感器晶片（402）。传感器晶片上的每个像素区域包括光电检测器（302），电荷 - 电压转换机构（306），用于将电荷从光电转换器传送到电荷 - 电压转换机构的转移机构（304）用于对电荷 - 电压转换机构进行放电的复位机构（308）。支撑电路晶片包括用于传感器晶片上的每个像素区域的放大器（312）和其它支撑电路。晶片间连接器（320）将传感器晶片上的每个电荷 - 电压机构直接连接到支撑电路晶片上的相应的门（416）到放大器。

2. 发明申请

WO2010053557A2 BACK-ILLUMINATED CMOS IMAGE SENSORS 审中-公开
标题翻译：后置照明CMOS图像传感器
公开(公告)号：WO2010053557A2
公开(公告)日：2010-05-14
申请号：PCT/US2009/005989
申请日：2009-11-05
申请人： EASTMAN KODAK COMPANY , ANDERSON, Todd, Jeffery , MCCARTEN, John, P. , SUMMA, Joseph, R. , TIVARUS, Cristian, Alexandru , STEVENS, Eric, Gordon
发明人： ANDERSON, Todd, Jeffery , MCCARTEN, John, P. , SUMMA, Joseph, R. , TIVARUS, Cristian, Alexandru , STEVENS, Eric, Gordon
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14689
摘要： A back-illuminated image sensor includes a sensor layer disposed between an insulating layer and a circuit layer electrically connected to the sensor layer. An imaging area includes a plurality of photodetectors is formed in the sensor layer and a well that spans the imaging area. The well can be disposed between the backside of the sensor layer and the photodetectors, or the well can be a buried well formed adjacent to the backside of the sensor layer with a region including formed between the photodetectors and the buried well. One or more side wells can be formed laterally adjacent to each photodetector. The dopant in the well has a segregation coefficient that causes the dopant to accumulate on the sensor layer side of an interface between the sensor layer and the insulating layer.
摘要翻译：背照式图像传感器包括设置在电连接到传感器层的绝缘层和电路层之间的传感器层。成像区域包括在传感器层中形成多个光电检测器和跨越成像区域的阱。阱可以设置在传感器层的背面和光电检测器之间，或者阱可以是与传感器层的背面相邻形成的掩埋阱，其中区域包括形成在光电探测器和掩埋阱之间。一个或多个侧孔可以横向邻近于每个光电检测器形成。阱中的掺杂剂具有使掺杂剂积聚在传感器层和绝缘层之间的界面的传感器层侧上的分离系数。

3. 发明申请

WO2010151326A1 IMAGE SENSOR WITH BIASED FRONTSIDE AND BACKSIDE 审中-公开
标题翻译：图像传感器与偏心FRONTSIDE和背面
公开(公告)号：WO2010151326A1
公开(公告)日：2010-12-29
申请号：PCT/US2010/001816
申请日：2010-06-24
申请人： EASTMAN KODAK COMPANY , MCCARTEN, John, P. , TIVARUS, Christian, Alexandru , SUMMA, Joseph, R.
发明人： MCCARTEN, John, P. , TIVARUS, Christian, Alexandru , SUMMA, Joseph, R.
IPC分类号： H01L27/146
CPC分类号： H01L27/14645 , H01L27/14609 , H01L27/1464
摘要： A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. One or more regions of a second conductivity type are formed in at least a portion of the sensor layer adjacent to the frontside. The one or more regions are connected to a voltage terminal for biasing these regions to a predetermined voltage. A backside well of the second conductivity type is formed in the sensor layer adjacent to the backside. The backside well is electrically connected to another voltage terminal for biasing the backside well at a second predetermined voltage that is different from the first predetermined voltage.
摘要翻译：背照式图像传感器包括第一导电类型的传感器层，其具有前侧和与前侧相对的背面。第二导电类型的一个或多个区域形成在邻近前侧的传感器层的至少一部分中。一个或多个区域连接到电压端子，用于将这些区域偏置到预定电压。第二导电类型的背面孔形成在邻近背面的传感器层中。背面孔电连接到另一个电压端子，用于以与第一预定电压不同的第二预定电压来偏置背面阱。

4. 发明申请

WO2010151288A1 IMAGE SENSORS HAVING FRONTSIDE AND BACKSIDE PHOTODETECTORS 审中-公开
标题翻译：具有FRONTSIDE和背光源的图像传感器
公开(公告)号：WO2010151288A1
公开(公告)日：2010-12-29
申请号：PCT/US2010/001679
申请日：2010-06-11
申请人： EASTMAN KODAK COMPANY , MCCARTEN, John P. , TIVARUS, Cristian Alexandru , SUMMA, Joseph R.
发明人： MCCARTEN, John P. , TIVARUS, Cristian Alexandru , SUMMA, Joseph R.
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14605 , H01L27/14632 , H01L27/1464 , H01L27/14647 , H01L27/14687 , H01L27/14689 , H01L31/035272
摘要： A back-illuminated image sensor includes a sensor layer (702) of a first conductivity type having a frontside (704) and a backside (706) opposite the front side. An insulating layer (708) is disposed over the backside. A circuit layer (710) is formed adjacent to the front side such that the sensor layer is positioned between the circuit layer and the insulating layer. One or more front side regions (728) of a second conductivity type are formed in at least a portion of the front side of the sensor layer. A backside region (740) of the second conductivity type is formed in the backside of the sensor layer. A plurality of front side photodetectors (718f, 720f, 722f) of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors (718b, 720b, 722b) of the first conductivity type separate from the plurality of front side photodetectors is formed in the sensor layer contiguous to portions of the backside region of the second conductivity type.
摘要翻译：背照式图像传感器包括具有前侧（704）和与前侧相对的背面（706）的第一导电类型的传感器层（702）。绝缘层（708）设置在背面上。电路层（710）邻近前侧形成，使得传感器层位于电路层和绝缘层之间。第二导电类型的一个或多个前侧区域（728）形成在传感器层的前侧的至少一部分中。在传感器层的背面形成有第二导电类型的背面区域（740）。第一导电类型的多个前侧光电检测器（718f，720f，722f）设置在传感器层中。在与第二导电类型的背侧区域的部分相邻的传感器层中形成有与多个前侧光电检测器分离的第一导电类型的不同的多个背面光电检测器（718b，720b，722b）。

5. 发明申请

WO2010151287A1 ALIGNING ELEMENTS IN BACK-ILLUMINATED IMAGE SENSORS 审中-公开
标题翻译：在后照明图像传感器中对准元件
公开(公告)号：WO2010151287A1
公开(公告)日：2010-12-29
申请号：PCT/US2010/001678
申请日：2010-06-11
申请人： EASTMAN KODAK COMPANY , MCCARTEN, John P. , TIVARUS, Cristian Alexandru , SUMMA, Joseph R.
发明人： MCCARTEN, John P. , TIVARUS, Cristian Alexandru , SUMMA, Joseph R.
IPC分类号： H01L27/146
CPC分类号： H01L27/14687 , H01L27/1464
摘要： A back-illuminated image sensor includes a sensor layer disposed between a circuit layer adjacent to a frontside of the sensor layer and a layer disposed on a backside of the sensor layer. One or more first alignment marks are formed in a layer in the circuit layer. A masking layer is aligned to the one or more first alignment marks. The masking layer includes openings that define locations for one or more second alignment marks. The one or more second alignment marks are then formed in or through the layer disposed on a backside of a sensor layer. One or more elements are formed in or on the backside of the sensor layer. The one or more elements are aligned to one or more second alignment marks.
摘要翻译：背照式图像传感器包括设置在与传感器层的前侧相邻的电路层与设置在传感器层的背面之间的层之间的传感器层。一个或多个第一对准标记形成在电路层中的一层中。掩模层与一个或多个第一对准标记对准。掩模层包括限定一个或多个第二对准标记的位置的开口。一个或多个第二对准标记然后形成在或设置在传感器层的背面上的层中。一个或多个元件形成在传感器层的背面中或其上。一个或多个元件与一个或多个第二对准标记对准。

6. 发明申请

WO2010077315A1 BACK ILLUMINATED SENSOR WITH LOW CROSSTALK 审中-公开
标题翻译：背面照明传感器与低CROSSTALK
公开(公告)号：WO2010077315A1
公开(公告)日：2010-07-08
申请号：PCT/US2009/006593
申请日：2009-12-16
申请人： EASTMAN KODAK COMPANY , MCCARTEN, John P. , SUMMA, Joseph R. , TIVARUS, Cristian Alexandru
发明人： MCCARTEN, John P. , SUMMA, Joseph R. , TIVARUS, Cristian Alexandru
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L27/1463 , H01L27/1464 , H01L27/14656
摘要： A back-illuminated image sensor includes a sensor layer having a frontside and a backside opposite the frontside. An insulating layer is situated adjacent the backside and a circuit layer is adjacent the frontside. A plurality of photodetectors of a first type conductivity convert light incident on the backside into photo-generated charges. The photodetectors are disposed in the sensor layer adjacent the frontside. A region of a second type conductivity is formed in at least a portion of the sensor layer adjacent the frontside and is connected to a voltage terminal for biasing the second type conductivity region at a predetermined voltage. A well of the second type conductivity is formed in the sensor layer adjacent the backside. Trench isolations in the sensor layer start at the frontside and extend beyond the depletion region of the photodiodes.
摘要翻译：背照式图像传感器包括具有前侧和与前侧相对的背面的传感器层。绝缘层位于背面附近，并且电路层邻近前侧。多个第一类型的光电检测器将入射到背面的光转换为光生电荷。光电检测器设置在邻近前侧的传感器层中。在邻近前侧的传感器层的至少一部分中形成有第二导电类型的区域，并连接到用于以预定电压偏置第二类型导电区域的电压端子。第二类电导率阱形成在靠近背面的传感器层中。传感器层中的沟槽隔离从前侧开始并延伸超过光电二极管的耗尽区。

7. 发明申请

WO2010074716A1 ULTRAVIOLET LIGHT FILTER LAYER IN IMAGE SENSORS 审中-公开
标题翻译：超声波滤光片在图像传感器中的应用
公开(公告)号：WO2010074716A1
公开(公告)日：2010-07-01
申请号：PCT/US2009/006486
申请日：2009-12-10
申请人： EASTMAN KODAK COMPANY , TIVARUS, Christian Alexandru , MCCARTEN, John P. , SUMMA, Joseph R.
发明人： TIVARUS, Christian Alexandru , MCCARTEN, John P. , SUMMA, Joseph R.
IPC分类号： H01L27/146 , H01L23/552 , G02B5/20 , H01L31/0232
CPC分类号： G02B5/208 , H01L27/1462 , H01L27/14621 , H01L27/1464 , H01L27/14689 , H01L31/02164 , H01L31/0232
摘要： An image sensor (500) includes one or more ultraviolet (UV) light filter layers (520) disposed between an insulating layer (518) and a color filter array (CFA) layer (522) The one or more UV light filter layers reflect or absorb UV light while transmitting visible light.
摘要翻译：图像传感器（500）包括设置在绝缘层（518）和滤色器阵列（CFA）层（522）之间的一个或多个紫外（UV）滤光器层（520）。一个或多个UV光滤光器层反射或在透过可见光的同时吸收紫外线。

8. 发明申请

WO2010071670A1 IMAGE SENSOR WITH THREE-DIMENSIONAL INTERCONNECT AND CCD 审中-公开
标题翻译：具有三维互连和CCD的图像传感器
公开(公告)号：WO2010071670A1
公开(公告)日：2010-06-24
申请号：PCT/US2009/006401
申请日：2009-12-07
申请人： EASTMAN KODAK COMPANY , SUMMA, Joseph, R. , MCCARTEN, John, P.
发明人： SUMMA, Joseph, R. , MCCARTEN, John, P.
IPC分类号： H01L27/146
CPC分类号： H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/1469
摘要： An image sensor and associated image capture device and method include a sensing wafer with a plurality of charge storage elements. One or more floating diffusions are associated with the plurality of charge storage elements, and charge is transferred among the charge storage elements to the one or more floating diffusions. The one or more floating diffusions on the sensing wafer are electrically connected to support circuitry on a circuit wafer.
摘要翻译：图像传感器和相关联的图像捕获装置和方法包括具有多个电荷存储元件的感测晶片。一个或多个浮动扩散与多个电荷存储元件相关联，并且电荷在电荷存储元件之间传递到一个或多个浮动扩散。感测晶片上的一个或多个浮动扩散电连接到电路晶片上的支撑电路。

9. 发明申请

WO2005047976A3 VARYING FEATURE SIZE IN RESIST 审中-公开
标题翻译：变化的特征尺寸
公开(公告)号：WO2005047976A3
公开(公告)日：2006-03-30
申请号：PCT/US2004037354
申请日：2004-11-09
申请人： EASTMAN KODAK CO , FABINSKI ROBERT PIERRE , SUMMA JOSEPH R
发明人： FABINSKI ROBERT PIERRE , SUMMA JOSEPH R
IPC分类号： G03F1/14 , G03F7/00 , G03F7/20
CPC分类号： G03F7/70466 , B82Y10/00 , G03F1/70 , G03F7/0005 , G03F7/0035 , G03F7/203
摘要： A method for creating a pattern on a substrate, the method includes the steps of imprinting a first pattern on the substrate; and imprinting a second substantially similar pattern which is mis-registered with regard to the first pattern so that the combination of the first and second patterns cause a systematic variation in a final size of defined elements across the substrate.
摘要翻译：一种用于在基板上形成图案的方法，所述方法包括以下步骤：将第一图案压印在所述基板上; 并且记录关于第一图案错误登记的第二基本相似的图案，使得第一和第二图案的组合引起跨越基底的限定元件的最终尺寸的系统变化。

10. 发明申请

WO2010053557A3 BACK-ILLUMINATED CMOS IMAGE SENSORS 审中-公开
标题翻译：后置照明CMOS图像传感器
公开(公告)号：WO2010053557A3
公开(公告)日：2010-08-19
申请号：PCT/US2009005989
申请日：2009-11-05
申请人： EASTMAN KODAK CO , ANDERSON TODD JEFFERY , MCCARTEN JOHN P , SUMMA JOSEPH R , TIVARUS CRISTIAN ALEXANDRU , STEVENS ERIC GORDON
发明人： ANDERSON TODD JEFFERY , MCCARTEN JOHN P , SUMMA JOSEPH R , TIVARUS CRISTIAN ALEXANDRU , STEVENS ERIC GORDON
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14689
摘要： A back-illuminated image sensor (500) includes a sensor layer (606) disposed between an insulating layer (604) and a circuit layer electrically connected to the sensor layer. An imaging area includes a plurality of photodetectors (616) formed in the sensor layer and a well (800) that spans the imaging area. The well can be disposed between the backside of the sensor layer and the photodetectors, or the well can be a buried well formed adjacent to the backside of the sensor layer including a region formed between the photodetectors and the buried well. One or more side wells can be formed laterally adjacent to each photodetector. The dopant in the well has a segregation coefficient that causes the dopant to accumulate on the sensor layer side of an interface (704) between the sensor layer and the insulating layer.
摘要翻译：背照式图像传感器（500）包括设置在绝缘层（604）和电连接到传感器层的电路层之间的传感器层（606）。成像区域包括形成在传感器层中的多个光电检测器（616）和跨越成像区域的阱（800）。阱可以设置在传感器层的背面和光电检测器之间，或者阱可以是与传感器层的背面相邻形成的掩埋阱，包括形成在光电检测器和埋置阱之间的区域。一个或多个侧孔可以横向邻近于每个光电检测器形成。阱中的掺杂剂具有使掺杂剂积聚在传感器层和绝缘层之间的界面（704）的传感器层侧上的分离系数。

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