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1. 发明申请

WO2015042121A1 TWO STEP METHOD OF RAPID CURING A SEMICONDUCTOR POLYMER LAYER 审中-公开
标题翻译：快速固化半导体聚合物层的两步法
公开(公告)号：WO2015042121A1
公开(公告)日：2015-03-26
申请号：PCT/US2014/056042
申请日：2014-09-17
申请人： DECA TECHNOLOGIES INC.
发明人： ROGERS, William, Boyd , VAN DEN HOEK, Willibrordus Gerardus, Maria
IPC分类号： H01L21/312
CPC分类号： H01L21/02118 , H01L21/31058 , H01L21/56 , H01L21/76802 , H01L21/76804 , H01L21/76814 , H01L23/3192 , H01L24/05 , H01L24/13 , H01L2224/0401 , H01L2224/05008 , H01L2224/05022 , H01L2224/05569 , H01L2224/05572 , H01L2224/05575 , H01L2224/056 , H01L2224/13006 , H01L2224/131 , H01L2924/13091 , H01L2924/00014 , H01L2924/00 , H01L2924/014
摘要： A semiconductor device and method of making the semiconductor device is described. A semiconductor die is provided. A polymer layer is formed over the semiconductor die. A via is formed in the polymer layer. The polymer layer is crosslinked in a first process. The polymer layer is thermally cured in a second process. The polymer layer can comprise polybenzoxazoles (PBO), polyimide, benzocyclobutene (BCB), or siloxane-based polymers. A surface of the polymer layer can be crosslinked by a UV bake to control a slope of the via during subsequent curing. The second process can further comprise thermally curing the polymer layer using conduction, convection, infrared, or microwave heating. The polymer layer can be thermally cured by increasing a temperature of the polymer at a rate greater than or equal to 10 degrees Celsius per minute, and can be completely cured in less than or equal to 60 minutes.
摘要翻译：描述制造半导体器件的半导体器件和方法。提供半导体管芯。聚合物层形成在半导体管芯上。在聚合物层中形成通孔。聚合物层在第一工艺中交联。聚合物层在第二工序中热固化。聚合物层可以包含聚苯并恶唑（PBO），聚酰亚胺，苯并环丁烯（BCB）或硅氧烷基聚合物。聚合物层的表面可以通过UV烘烤来交联，以在后续固化期间控制通孔的斜率。第二种方法还可以包括使用传导，对流，红外或微波加热来热固化聚合物层。聚合物层可以通过以大于或等于10摄氏度/分钟的速率增加聚合物的温度来热固化，并且可以在小于或等于60分钟内完全固化。

2. 发明申请

WO2017087956A1 FULLY MOLDED PERIPHERAL PACKAGE ON PACKAGE DEVICE 审中-公开
标题翻译：包装设备上完全成型外围包装
公开(公告)号：WO2017087956A1
公开(公告)日：2017-05-26
申请号：PCT/US2016/063117
申请日：2016-11-21
申请人： DECA TECHNOLOGIES INC.
发明人： SCANLAN, Christopher, M. , ROGERS, William, Boyd , BISHOP, Craig
IPC分类号： H01L21/768 , H01L21/50
CPC分类号： H01L24/19 , H01L21/486 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/3731 , H01L23/5384 , H01L23/5389 , H01L24/97 , H01L25/105 , H01L2221/68331 , H01L2221/68345 , H01L2221/6835 , H01L2221/68359 , H01L2221/68372 , H01L2221/68381 , H01L2224/04105 , H01L2224/12105 , H01L2224/19 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2224/97 , H01L2225/1035 , H01L2225/1041 , H01L2225/1058 , H01L2924/3511 , H01L2224/83
摘要： A method of making a semiconductor device can comprise providing a temporary carrier comprising a semiconductor die mounting site, and forming an insulating layer over the temporary carrier. Conductive pads can be formed within openings in the insulating layer and be positioned both within and without the die mounting area. A backside redistribution layer (RDL) can be formed over the temporary carrier before mounting a semiconductor die at the die mounting site. Conductive interconnects can be formed over the temporary carrier in a periphery of the semiconductor die mounting site. A semiconductor die can be mounted face up to the insulating layer. The conductive interconnects, backside RDL, and semiconductor die can be encapsulated with a mold compound. A build-up interconnect structure can be formed and connected to the semiconductor die and the conductive interconnects. The temporary carrier can be removed and the conductive pads exposed in a grinding process.
摘要翻译：制造半导体器件的方法可以包括提供包括半导体管芯安装部位的临时载体，并且在临时载体上形成绝缘层。导电焊盘可以形成在绝缘层的开口内，并且可以位于和不位于管芯安装区域内。在将半导体管芯安装在管芯安装位置之前，可以在临时载体上形成背侧重新分布层（RDL）。导电互连可以形成在半导体管芯安装位置周围的临时载体上。可以将半导体管芯面朝上安装到绝缘层。导电互连，背面RDL和半导体管芯可以用模塑化合物封装。构建互连结构可以形成并连接到半导体管芯和导电互连。临时载体可以被移除并且导电垫在研磨过程中暴露。

3. 发明申请

WO2017087427A1 FULLY MOLDED PERIPHERAL PACKAGE ON PACKAGE DEVICE 审中-公开
标题翻译：包装设备上完全成型外围包装
公开(公告)号：WO2017087427A1
公开(公告)日：2017-05-26
申请号：PCT/US2016/062112
申请日：2016-11-15
申请人： DECA TECHNOLOGIES INC.
发明人： SCANLAN, Christopher, M. , ROGERS, William, Boyd , BISHOP, Craig
IPC分类号： H01L21/768 , H01L21/50
CPC分类号： H01L23/5389 , H01L21/561 , H01L21/768 , H01L23/3128 , H01L23/49811 , H01L2224/16225 , H01L2224/97
摘要： A method of making a semiconductor device can include providing a temporary carrier with a semiconductor die mounting site, and forming conductive interconnects over the temporary carrier in a periphery of the semiconductor die mounting site. A semiconductor die can be mounted at the semiconductor die mounting site. The conductive interconnects and semiconductor die can be encapsulated with mold compound. First ends of the conductive interconnects can be exposed. The temporary carrier can be removed to expose second ends of the conductive interconnects opposite the first ends of the conductive interconnects. The conductive interconnects can be etched to recess the second ends of the conductive interconnects with respect to the mold compound. The conductive interconnects can comprise a first portion, a second portion, and an etch stop layer disposed between the first portion and the second portion.
摘要翻译：制造半导体器件的方法可以包括提供具有半导体管芯安装部位的临时载体，以及在半导体管芯安装部位的外围中的临时载体上形成导电互连。半导体管芯可以安装在半导体管芯安装地点。导电互连和半导体管芯可以用模塑化合物封装。导电互连的第一端可以暴露。临时载体可被移除以暴露与导电互连的第一端相对的导电互连的第二端。导电互连可以被蚀刻以使导电互连的第二端相对于模制化合物凹陷。导电互连可以包括第一部分，第二部分和设置在第一部分和第二部分之间的蚀刻停止层。

4. 发明申请

WO2017007988A1 SEMICONDUCTOR DEVICE PROCESSING METHOD FOR MATERIAL REMOVAL 审中-公开
标题翻译：用于材料去除的半导体器件处理方法
公开(公告)号：WO2017007988A1
公开(公告)日：2017-01-12
申请号：PCT/US2016/041443
申请日：2016-07-08
申请人： DECA TECHNOLOGIES INC.
发明人： OLSON, Timothy, L. , ROGERS, William, Boyd , ALDAS, Ferdinand
IPC分类号： H01L21/308
CPC分类号： H01L21/30604 , H01L21/568 , H01L21/67784 , H01L24/03 , H01L24/05 , H01L24/19 , H01L24/75 , H01L24/76 , H01L24/96 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/03614 , H01L2224/0381 , H01L2224/0391 , H01L2224/0401 , H01L2224/04105 , H01L2224/05111 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/742 , H01L2224/7501 , H01L2224/75651 , H01L2224/7665 , H01L2224/94 , H01L2924/18162 , H01L2224/214
摘要： A method of removing at least a portion of a layer of material from over a semiconductor substrate that can include dispensing an etching solution over the semiconductor substrate to form a pool of etching solution on the layer of material, wherein a footprint of the pool of etching solution is less than a footprint of the semiconductor substrate. The pool of etching solution and the semiconductor substrate can be moved with respect to each other. A pool boundary of the pool of etching solution can be defined on the semiconductor substrate with at least one air-knife such that the pool of etching solution etches the layer of material over the semiconductor substrate within the footprint of the pool of etching solution. The etching solution and at least a portion of the layer of material etched by the etching solution can be removed with the at least one air-knife.
摘要翻译：一种从半导体衬底上去除材料层的至少一部分的方法，其可以包括在半导体衬底上分配蚀刻溶液以在该材料层上形成蚀刻溶液池，其中蚀刻池的覆盖区溶液小于半导体衬底的覆盖区。蚀刻溶液池和半导体衬底可以相对于彼此移动。可以使用至少一个气刀在半导体衬底上限定蚀刻溶液池的池边界，使得蚀刻溶液池在蚀刻溶液池的覆盖区内蚀刻半导体衬底上的材料层。蚀刻溶液和由蚀刻溶液蚀刻的材料层的至少一部分可以用至少一个气刀去除。

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