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1. 发明申请

WO2011157643A1 MASK FOR EUV LITHOGRAPHY, EUV LITHOGRAPHY SYSTEM AND METHOD FOR OPTIMISING THE IMAGING OF A MASK 审中-公开
标题翻译：用于EUV算法的掩码，用于优化掩模成像的EUV算法系统和方法
公开(公告)号：WO2011157643A1
公开(公告)日：2011-12-22
申请号：PCT/EP2011/059669
申请日：2011-06-10
申请人： CARL ZEISS SMT GMBH , RUOFF, Johannes , KRÄHMER, Daniel
发明人： RUOFF, Johannes , KRÄHMER, Daniel
IPC分类号： G03F1/14
CPC分类号： G03F7/70141 , B82Y10/00 , B82Y40/00 , G03F1/22 , G03F1/24
摘要： The invention relates to a mask (105) for EUV lithography- comprising : a substrate (107), a multi-layer coating (108) applied to the substrate (107) and a mask structure (109) which is applied to the multi-layer coating (108) and which has an absorber material, the mask structure (109) having a maximum thickness of less than 100 nm, preferably not exceeding a maximum thickness of 30 nm, particularly preferably 20 nm, in particular 10 nm. The invention also relates to an EUV lithography system having such a mask (105) and a method for optimising the imaging of a mask (105).
摘要翻译：本发明涉及一种用于EUV光刻的掩模（105），包括：衬底（107），施加到衬底（107）的多层涂层（108）和掩模结构（109）（108），并且具有吸收材料，所述掩模结构（109）的最大厚度小于100nm，优选不超过最大厚度为30nm，特别优选为20nm，特别优选为10nm。本发明还涉及具有这种掩模（105）的EUV光刻系统和用于优化掩模（105）的成像的方法。

2. 发明申请

WO2012041339A1 OPTICAL SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS AND METHOD OF REDUCING IMAGE PLACEMENT ERRORS 审中-公开
标题翻译：微型投影曝光装置的光学系统和减少图像放置误差的方法
公开(公告)号：WO2012041339A1
公开(公告)日：2012-04-05
申请号：PCT/EP2010/005901
申请日：2010-09-28
申请人： CARL ZEISS SMT GMBH , RUOFF, Johannes , NEUMANN, Jens Timo , ZIMMERMANN, Jörg , HELLWEG, Dirk , JÜRGENS, Dirk
发明人： RUOFF, Johannes , NEUMANN, Jens Timo , ZIMMERMANN, Jörg , HELLWEG, Dirk , JÜRGENS, Dirk
IPC分类号： G03F7/20
CPC分类号： G03F7/70141 , G03F7/70116 , G03F7/70466 , G03F7/70566 , G03F7/70633
摘要： A method of reducing image placement errors in a microlithographic projection exposure apparatus comprises the steps of providing a mask (16), a light sensitive layer (22) and a microlithographic projection exposure apparatus (10) which images features (19) contained in the mask (16) onto the light sensitive surface (22) using projection light. In a next step image placement errors associated with an image of the features (10) formed on the light sensitive surface (22) are determined either by simulation or metrologically. Then an input state of polarization of the projection light is changed to an elliptical output state of polarization which is selected such that the image placement errors are reduced.
摘要翻译：一种在微光刻投影曝光装置中减少图像放置误差的方法包括以下步骤：提供掩模（16），光敏层（22）和微影印制投影曝光装置（10），其对包含在掩模中的特征（19）进行成像（16）使用投影光到达光敏表面（22）。在下一步骤中，通过模拟或计量确定与形成在光敏表面（22）上的特征（10）的图像相关联的图像放置误差。然后，投影光的输入偏振状态变为偏振的椭圆输出状态，其被选择为使得图像放置误差减小。

3. 发明申请

WO2013013947A2 OPTICAL SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS, AND MICROLITHOGRAPHIC EXPOSURE METHOD 审中-公开
标题翻译：微型投影曝光装置的光学系统及微型曝光方法
公开(公告)号：WO2013013947A2
公开(公告)日：2013-01-31
申请号：PCT/EP2012/063102
申请日：2012-07-05
申请人： CARL ZEISS SMT GMBH , SÄNGER, Ingo , ZIMMERMANN, Jörg , RUOFF, Johannes , MEIER, Martin , SCHLESENER, Frank , HENNERKES, Christoph
发明人： SÄNGER, Ingo , ZIMMERMANN, Jörg , RUOFF, Johannes , MEIER, Martin , SCHLESENER, Frank , HENNERKES, Christoph
IPC分类号： G03F7/20 , G02B27/10 , G02B27/28 , G02B5/09
CPC分类号： G03F7/70191 , G02B27/283 , G03F7/70108 , G03F7/70116 , G03F7/70566
摘要： The disclosure relates to optical systems of a microlithographic projection exposure apparatus, and to a microlithographic exposure method. According to an aspect of the disclosure, an optical system has a light source, a ray-splitting optical element (110, 310, 410, 510, 706), which splits a light ray incident on this element when the projection exposure apparatus is in operation into a first partial ray (S101, S301, S401, S501, S701) and a second partial ray (S102, S302, S402, S502, S702), with the first and the second partial ray having mutually orthogonal polarization directions, and at least one ray-deflecting optical element (205, 206, 330, 340, 350, 360, 370, 470, 530, 540, 710, 720, 730, 810, 820, 830) for generating a desired polarized illumination setting from the first partial ray (S101, S301, S401, S501, S701) and the second partial ray (S102, S302, S402, S502, S702), wherein the ray-splitting optical element (110, 310, 410, 510, 706) is arranged such that light incident on this ray-splitting optical element when the projection exposure apparatus is in operation has a degree of polarization of less than one.
摘要翻译：本公开涉及微光刻投影曝光设备的光学系统，并且涉及微光刻曝光方法。根据本公开的一个方面，光学系统具有光源，当投影曝光设备处于入射时将入射在该元件上的光线分开的光线分离光学元件（110,310,410,510,706）在第一和第二部分光线具有相互正交的偏振方向的情况下将第一部分光线（S101，S301，S401，S501，S701）和第二部分光线（S102，S302，S402，S502，S702）至少一个用于从第一个偏振照明装置产生期望的偏振照明设置的光线偏转光学元件（205,206,330,340,350,360,370,470,530,540,710,720,730,810,820,830）（110,310,410,510,706）排列的部分光线（S101，S301，S401，S501，S701）和第二部分光线（S102，S302，S402，S502，S702）使得当投影曝光装置在操作中时入射到该光线分离光学元件上的光具有小于1的偏振度。

4. 发明申请

WO2013007731A1 ILLUMINATION OPTICAL UNIT FOR PROJECTION LITHOGRAPHY 审中-公开
标题翻译：投影光刻照明光学单元
公开(公告)号：WO2013007731A1
公开(公告)日：2013-01-17
申请号：PCT/EP2012/063520
申请日：2012-07-11
申请人： CARL ZEISS SMT GMBH , HENNERKES, Christoph , SÄNGER, Ingo , ZIMMERMANN, Jörg , RUOFF, Johannes , MEIER, Martin , SCHLESENER, Frank
发明人： HENNERKES, Christoph , SÄNGER, Ingo , ZIMMERMANN, Jörg , RUOFF, Johannes , MEIER, Martin , SCHLESENER, Frank
IPC分类号： G03F7/20
CPC分类号： G03F7/70191 , G02B7/1815 , G02B17/06 , G02B26/0816 , G03F7/70108 , G03F7/70116 , G03F7/70891
摘要： An illumination optical unit for projection lithography has a first polarization mirror device (16) for the reflection and polarization of illumination light (3). A second mirror device (22), which is disposed downstream of the polarization mirror device (16), serves for the reflection of an illumination light beam (25). At least one drive device (21; 27) is operatively connected to at least one of the two mirror devices (16; 22). The two mirror devices (16; 22) are displaceable relative to one another with the aid of the drive device (21; 27) between a first relative position, which leads to a first beam geometry of the illumination light beam (25) after reflection at the second mirror device (22), and a second relative position, which leads to a second beam geometry of the illumination light beam (25) after reflection at the second mirror device (22), which is different from the first beam geometry. This results in a flexible predefinition of different illumination geometries, in particular of different illumination geometries with rotationally symmetrical illumination.
摘要翻译：用于投影光刻的照明光学单元具有用于照明光（3）的反射和偏振的第一偏振镜装置（16）。设置在偏振镜装置（16）下游的第二镜装置（22）用于照明光束（25）的反射。至少一个驱动装置（21; 27）可操作地连接到两个反射镜装置（16; 22）中的至少一个。借助于驱动装置（21; 27），两个反射镜装置（16; 22）可相对于彼此移动，该第一相对位置在第一相对位置之间，该第一相对位置在反射之后导致照明光束（25）的第一光束几何形状在第二反射镜装置（22）和第二相对位置，其在第二反射镜装置（22）反射之后导致照明光束（25）的第二光束几何形状，其与第一光束几何形状不同。这导致不同照明几何形状的灵活预定义，特别是具有旋转对称照明的不同照明几何形状。

5. 发明申请

WO2021073821A1 VERFAHREN UND VORRICHTUNG ZUR CHARAKTERISIERUNG DER OBERFLÄCHENFORM EINES OPTISCHEN ELEMENTS 审中-公开
公开(公告)号：WO2021073821A1
公开(公告)日：2021-04-22
申请号：PCT/EP2020/075737
申请日：2020-09-15
申请人： CARL ZEISS SMT GMBH , SIEGLER, Steffen , RUOFF, Johannes , WOLF, Alexander , CARL, Michael , GRUNER, Toralf , SCHICKETANZ, Thomas
发明人： SIEGLER, Steffen , RUOFF, Johannes , WOLF, Alexander , CARL, Michael , GRUNER, Toralf , SCHICKETANZ, Thomas
IPC分类号： G01B9/02 , G01B11/24 , G01M11/00 , G03F7/20
摘要： Die Erfindung betrifft ein Verfahren und eine Vorrichtung zur Charakterisierung der Oberflächenform eines optischen Elements. Ein erfindungsgemäßes Verfahren weist folgende Schritte auf: Durchführen, in einer interferometrischen Prüfanordnung, wenigstens einer ersten Interferogramm-Messung an dem optischen Element durch Überlagerung einer durch Beugung elektromagnetischer Strahlung an einem diffraktiven Element erzeugten und an dem optischen Element reflektierten Prüfwelle mit einer nicht an dem optischen Element reflektierten Referenzwelle, Durchführen wenigstens einer weiteren Interferogramm-Messung an jeweils einem Kalibrierspiegel zur Ermittlung von Kalibrierkorrekturen, und Bestimmen der Passe des optischen Elements basierend auf der an dem optischen Element durchgeführten ersten Interferogramm-Messung und der ermittelten Kalibrierkorrekturen. Dabei werden für den wenigstens einen Kalibrierspiegel wenigstens zwei Interferogramm-Messungen durchgeführt, welche sich hinsichtlich des Polarisationszustandes der elektromagnetischen Strahlung voneinander unterscheiden.

6. 发明申请

WO2013045597A1 IMAGING CATOPTRIC EUV PROJECTION OPTICAL UNIT 审中-公开
标题翻译：成像光电EUV投影光学单元
公开(公告)号：WO2013045597A1
公开(公告)日：2013-04-04
申请号：PCT/EP2012/069158
申请日：2012-09-28
申请人： CARL ZEISS SMT GMBH , RUOFF, Johannes , SCHICKETANZ, Thomas
发明人： RUOFF, Johannes , SCHICKETANZ, Thomas
IPC分类号： G02B17/06 , G03F7/20
CPC分类号： G03F7/70233 , G02B17/06 , G02B17/0663 , G03F7/7015 , G03F7/70566
摘要： An imaging catoptric optical unit (7) has at least four mirrors (Ml to M4), which image an object field (4) in an object plane (5) into an image field (8) in an image plane (9). A first chief ray plane (yz) of the optical unit is prescribed by propagation of a chief ray (16) of a central object field point during the reflection at one of the mirrors (Ml). A second chief ray plane (xz) of the optical unit is prescribed by propagation of the chief ray (16) of the central object field point during the reflection at one of the other mirrors (M3, M4). The two chief ray planes (yz, xz) include an angle that differs from 0. In an alternative or additional aspect, the imaging optical unit (7), considered via the image field (8), has a maximum diattenuation (D) of 10% or a diattenuation that prefers a tangential polarization of the imaging light for a respectively considered illumination angle. The result of both aspects is an imaging optical unit in which bothersome polarization influences are reduced during the reflection of imaging light at the mirrors of the imaging optical unit.
摘要翻译：成像反射光学单元（7）具有至少四个镜（M1至M4），其将物平面（5）中的物场（4）成像为图像平面（9）中的图像场（8）。光学单元的第一主射线平面（yz）由反射镜（M1）之一的反射期间的中心物场点的主射线（16）的传播来规定。光学单元的第二主光线平面（xz）是通过在其它反射镜（M3，M4）之一的反射期间中心物场点的主射线（16）的传播来规定的。两个主射线平面（yz，xz）包括与0不同的角度。在替代或另外的方面，通过图像场（8）考虑的成像光学单元（7）具有最大减光度（D） 10％或偏心，其偏好对于分别考虑的照明角度的成像光的切向极化。两个方面的结果是成像光学单元，其中在成像光学单元的反射镜的成像光的反射期间，麻烦的偏振影响减小。

7. 发明申请

WO2013123973A1 METHOD AND APPARATUS FOR COMPENSATING AT LEAST ONE DEFECT OF AN OPTICAL SYSTEM 审中-公开
标题翻译：用于补偿光学系统的至少一个缺陷的方法和装置
公开(公告)号：WO2013123973A1
公开(公告)日：2013-08-29
申请号：PCT/EP2012/052909
申请日：2012-02-21
申请人： CARL ZEISS SMS LTD. , CARL ZEISS SMT GMBH , DMITRIEV, Vladimir , SÄNGER, Ingo , SCHLESENER, Frank , MENGEL, Markus , RUOFF, Johannes
发明人： DMITRIEV, Vladimir , SÄNGER, Ingo , SCHLESENER, Frank , MENGEL, Markus , RUOFF, Johannes
IPC分类号： G03F7/20
CPC分类号： G03F7/70591 , G01M11/0242 , G02B5/3091 , G02B27/0043 , G03F7/70191 , G03F7/70308 , G03F7/70566
摘要： The invention relates to a method for compensating at least one defect of an optical system which comprises introducing an arrangement of local persistent modifications in at least one optical element of the optical system, so that the at least one defect is at least partially compensated. Ultra-short laser pulses are used to create strain induced birefringence for compensating local polarization variations or to create local scattering distribution for compensating intensity variations.
摘要翻译：本发明涉及一种用于补偿光学系统的至少一个缺陷的方法，其包括在所述光学系统的至少一个光学元件中引入本地持续修改的布置，使得所述至少一个缺陷至少部分被补偿。使用超短激光脉冲来产生应变诱导双折射以补偿局部偏振变化或产生用于补偿强度变化的局部散射分布。

8. 发明申请

WO2012041807A1 MIRROR, OPTICAL SYSTEM FOR EUV PROJECTION EXPOSURE SYSTEM AND METHOD OF PRODUCING A COMPONENT 审中-公开
标题翻译：镜子，用于EUV投影曝光系统的光学系统和生产组件的方法
公开(公告)号：WO2012041807A1
公开(公告)日：2012-04-05
申请号：PCT/EP2011/066667
申请日：2011-09-26
申请人： CARL ZEISS SMT GMBH , RUOFF, Johannes , FELDMANN, Heiko
发明人： RUOFF, Johannes , FELDMANN, Heiko
IPC分类号： G03F7/20
CPC分类号： G02B5/0891 , G03F7/70066 , G03F7/70225 , G03F7/70283
摘要： A mirror (20) for EUV radiation (14) comprises a mirror body, which has at least one EUV radiation-reflecting region (23) and at least two EUV radiation-permeable regions (22). As a result, a spatial separation of the illumination and imaging beam paths is also possible with small angles of incidence and a large object-side numerical aperture.
摘要翻译：用于EUV辐射的反射镜（20）（14）包括具有至少一个EUV辐射反射区域（23）和至少两个EUV辐射透射区域（22）的镜体。结果，照射和成像光束路径的空间分离也可以具有小的入射角和大的物体侧数值孔径。

9. 发明申请

WO2011120821A1 METHOD FOR OPERATING A PROJECTION EXPOSURE APPARATUS WITH CORRECTION OF IMAGING ABERRATIONS INDUCED BY THE MASK 审中-公开
标题翻译：投影曝光装置的操作方法，用于校正由MASK引起的成像异常
公开(公告)号：WO2011120821A1
公开(公告)日：2011-10-06
申请号：PCT/EP2011/054084
申请日：2011-03-17
申请人： CARL ZEISS SMT GMBH , RUOFF, Johannes
发明人： RUOFF, Johannes
IPC分类号： G03F7/20
CPC分类号： G03F7/70283 , G03F7/705 , G03F7/70566 , G03F7/706
摘要： The invention relates to a method for adapting a projection exposure apparatus for microlithography to a mask having structures having different pitches and/or different structure widths in different structure directions, wherein the wavefront aberrations induced by the mask are reduced by a manipulator of the projection exposure apparatus for microlithography.
摘要翻译：本发明涉及一种用于将微光刻的投影曝光装置适应于具有在不同结构方向具有不同间距和/或不同结构宽度的结构的掩模的方法，其中由掩模引起的波前像差由投影曝光的操纵器减小微光刻机。

10. 发明申请

WO2012041720A2 PROJECTION EXPOSURE APPARATUS FOR EUV MICROLITHOGRAPHY AND METHOD FOR MICROLITHOGRAPHIC EXPOSURE 审中-公开
标题翻译： EUV微型摄影用投影曝光装置及微型曝光方法
公开(公告)号：WO2012041720A2
公开(公告)日：2012-04-05
申请号：PCT/EP2011/066104
申请日：2011-09-16
申请人： CARL ZEISS SMT GMBH , BIENERT, Marc , FELDMANN, Heiko , GÖHNERMEIER, Aksel , NATT, Oliver , RUOFF, Johannes
发明人： BIENERT, Marc , FELDMANN, Heiko , GÖHNERMEIER, Aksel , NATT, Oliver , RUOFF, Johannes
IPC分类号： G03F7/20
CPC分类号： G03F7/70091 , G03F7/701 , G03F7/70425
摘要： The invention relates to a projection exposure apparatus for EUV microlithography comprising an illumination system (1) for illuminating a pattern and a projection objective (2) for imaging the pattern onto a light-sensitive substrate (5). The projection objective (2) has a pupil plane (30) with an obscuration. The illumination system (1) generates light with an angular distribution. The angular distribution has an illumination pole (35, 36) which extends over a range of polar angles and a range of azimuth angles and within which the light intensity is greater than an illumination pole minimum value. From the illumination pole (35, 36) toward large polar angles a dark zone (41, 42) is excluded within which the light intensity is less than the illumination pole minimum value, and which has in regions a form corresponding to the form of the obscuration of the pupil plane (30).
摘要翻译：本发明涉及一种用于EUV微光刻的投影曝光设备，其包括用于照射图案的照射系统（1）和用于将图案成像到光敏基底（5）上的投影物镜（2）。投影物镜（2）具有遮光的光瞳平面（30）。照明系统（1）产生具有角度分布的光。角度分布具有在极角范围和方位角范围上延伸的照明极（35,36），并且在该范围内光强度大于照明极点最小值。从照明极（35,36）朝向大极角，排除了暗区（41,42），在暗区内光强度小于照明极点最小值，并且在区域中具有对应于照明极的最小值的形式模糊瞳孔飞机（30）。

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