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    • 1. 发明申请
    • IMAGING OPTICAL SYSTEM FOR MICROLITHOGRAPHY
    • 成像光学系统
    • WO2012041459A2
    • 2012-04-05
    • PCT/EP2011/004744
    • 2011-09-22
    • CARL ZEISS SMT GMBHROGALSKY, OlafSCHNEIDER, SonjaBITTNER, BorisKUGLER, JensGELLRICH, BernhardFREIMANN, Rolf
    • ROGALSKY, OlafSCHNEIDER, SonjaBITTNER, BorisKUGLER, JensGELLRICH, BernhardFREIMANN, Rolf
    • G03F7/20
    • G02B17/06G02B17/0663G02B27/0012G03F7/70258G03F7/70308G03F7/70891
    • An imaging optical system (10), in particular a projection objective, for microlithography, comprises optical elements (M1-M6) configured to guide electromagnetic radiation (19) with a wavelength λ in an imaging beam path for imaging an object field (13) into an image plane (14), and a pupil (24), having coordinates (p, q) which, together with the image field (16), having coordinates (x, y), of the optical system (10), spans an extended 4-dimensional pupil space, having coordinates (x, y, p, q) as a function of which a wavefront W(x, y, p, q) of the radiation (19) passing through the optical system is defined. At least a first of the optical elements (M1-M6) has a non-rotationally symmetrical surface (26) having a respective surface deviation in relation to every rotationally symmetrical surface (28), which two-dimensional surface has a difference between its greatest elevation and its deepest valley of at least λ. A sub-aperture ratio of the non- rotationally symmetrical surface deviates at every point (Ο 1 , O 2 ) of the object field (13) by at least 0.01 from the sub-aperture ratio of every other surface of the optical elements, which is located in the imaging beam path, at the respective point (O 1 , O 2 ) of the object field (13). Furthermore, the surface (26) of the first optical element (M4) is configured such that by displacing the first optical element relative to the other optical elements a change to the wavefront of the optical system (10) can be brought about which has a portion with at least 2-fold symmetry, the maximum value of the wavefront change in the extended 4- dimensional pupil space being at least 1 x 10 -5 of the wavelength λ.
    • 用于微光刻的成像光学系统(10),特别是投影物镜,包括被配置为在成像光束路径中引导具有波长λ的电磁辐射(19)的光学元件(M1-M6) 用于将物场(13)成像到图像平面(14)中,以及瞳孔(24),其具有与图像场(16)一起具有坐标(x,y)的坐标(p,q), 光学系统(10)跨越具有坐标(x,y,p,q)的扩展的4维光瞳空间,其作为辐射(19)的波前W(x,y,p,q) 通过光学系统的定义。 至少第一光学元件(M1-M6)具有相对于每个旋转对称表面(28)具有各自的表面偏差的非旋转对称表面(26),该二维表面具有其最大值 海拔及其最深的谷至少为λ。 非旋转对称表面的子孔径比在物场(13)的每个点(0 1,0 2,0 2)处偏离至少0.01 位于成像光束路径中的光学元件的每个其他表面的子孔径比在物体的各个点(0 1,0 2,2) 字段(13)。 此外,第一光学元件(M4)的表面(26)被配置为使得通过相对于其他光学元件移位第一光学元件,可以实现对光学系统(10)的波前的改变,其具有 部分具有至少2倍对称性,扩展的四维光瞳空间中波前变化的最大值至少为波长λ的1×10-5。
    • 2. 发明申请
    • PROJECTION ARRANGEMENT
    • 投影安排
    • WO2012175501A1
    • 2012-12-27
    • PCT/EP2012/061718
    • 2012-06-19
    • CARL ZEISS SMT GMBHFREIMANN, RolfBITTNER, Boris
    • FREIMANN, RolfBITTNER, Boris
    • G03F7/20G02B26/06
    • G03F7/7015G03F7/70266G03F7/70308G03F7/70891
    • A projection arrangement (1) for imaging lithographic structure information com- prises: an optical element (2), which has at least partly a coating (14) composed of an electrically conductive layer material. The coating (14) comprises a continuous region (100), which has no elements that shade projection light. In this case, the layer material and/or the optical element (2) change(s) an optical property, in particular a refractive index or an optical path length, depending on a temperature change. At least one means (3) for coupling energy into the layer material is provided, which couples in energy in such a way that the layer material converts coupled-in energy into thermal energy. The layer material may comprise graphene, chromium and/or molybdenum sulfide (MoS2).
    • 用于对光刻结构信息进行成像的投影装置(1)包括:至少部分地由导电层材料构成的涂层(14)的光学元件(2)。 涂层(14)包括连续区域(100),其没有遮蔽投射光的元件。 在这种情况下,层材料和/或光学元件(2)根据温度变化而改变光学特性,特别是折射率或光程长度。 提供了用于将能量耦合到层材料中的至少一个装置(3),其以能量耦合,使得层材料将耦合的能量转换成热能。 层材料可以包括石墨烯,铬和/或硫化钼(MoS 2)。
    • 3. 发明申请
    • OPTICAL DEVICE
    • 光学装置
    • WO2012126887A1
    • 2012-09-27
    • PCT/EP2012/054813
    • 2012-03-19
    • CARL ZEISS SMT GMBHFREIMANN, RolfFELDMANN, Heiko
    • FREIMANN, RolfFELDMANN, Heiko
    • G01M11/02G03F7/20
    • G01M11/00G01M11/02G03F7/70358G03F7/70591Y10T428/24802
    • A device comprising an imaging optical unit (9) for imaging an object field (5) in an image field (10), a structured mask (7), which is arranged in the region of the object field (5) by means of a reticle holder (8) that can be displaced in a reticle scanning direction (21), and a sensor apparatus (25), which is arranged in the region of the image field (10) by means of a substrate holder (13) that can be displaced in a substrate scanning direction (22), wherein the mask (7) has at least one measurement structure (27; 33) to be imaged on the sensor apparatus (25), wherein the sensor apparatus (25) comprises at least one sensor row (28) with a multiplicity of sensor elements (29), and wherein the sensor apparatus (25) is embodied such that it affords the possibility of testing the imaging optical unit (9) during the displacement of the substrate holder (13) for exposing a substrate (12) arranged on the latter.
    • 一种装置,包括用于对图像场(10)中的物场(5)进行成像的成像光学单元(9),结构化掩模(7),其被布置在物场(5)的区域中,借助于 可以在掩模版扫描方向(21)上移位的标线保持器(8)和传感器装置(25),其通过衬底保持器(13)布置在图像场(10)的区域中,该衬底保持器 在衬底扫描方向(22)上移位,其中掩模(7)具有要在传感器装置(25)上成像的至少一个测量结构(27; 33),其中传感器装置(25)包括至少一个 具有多个传感器元件(29)的传感器行(28),并且其中所述传感器装置(25)被实施为使得其在所述基板保持器(13)的位移期间提供测试所述成像光学单元(9)的可能性, 用于暴露布置在其上的衬底(12)。
    • 5. 发明申请
    • VERFAHREN ZUM JUSTIEREN EINES SPIEGELS EINER MIKROLITHOGRAPHISCHEN PROJEKTIONSBELICHTUNGSANLAGE
    • 方法用于调整的微光刻投射曝光装置的反射镜的
    • WO2015150301A1
    • 2015-10-08
    • PCT/EP2015/056843
    • 2015-03-30
    • CARL ZEISS SMT GMBHFREIMANN, RolfDÖRBAND, BerndHETZLER, Jochen
    • FREIMANN, RolfDÖRBAND, BerndHETZLER, Jochen
    • G03F7/20
    • G03F7/70141G02B5/09G03F7/70233G03F7/70258G03F7/706
    • Die Erfindung betrifft ein Verfahren zum Justieren eines Spiegels einer mikrolithographischen Projektionsbelichtungsanlage. Gemäß einem Aspekt der Erfindung weist ein erfindungsgemäßes Verfahren folgende Schritte auf: Aufnehmen eines ersten Teil-Interferogramms zwischen einer an einem ersten Spiegelsegment (101) reflektierten Welle und einer an einer Referenzfläche (110, 310, 510) reflektierten Referenzwelle, Aufnehmen eines zweiten Teil- Interferogramms zwischen einer an einem zweiten Spiegelsegment (102) reflektierten Welle und einer an der Referenzfläche (110, 310, 510) reflektierten Referenzwelle, Ermitteln eines Phasenversatzes zwischen dem ersten Teil-Interferogramm und dem zweiten Teil-Interferogramm, und Justieren des ersten Spiegelsegments (101) und des zweiten Spiegelsegments (102) zueinander auf Basis des ermittelten Phasenversatzes derart, dass der Abstand der betreffenden Spiegelsegmente (101, 102) in Richtung der jeweiligen Oberflächennormalen von einer fiktiven, vorgegebenen Sollfläche in jedem Punkt auf den Spiegelsegmenten kleiner ist als λ/10, wobei λ die Arbeitswellenlänge bezeichnet.
    • 本发明涉及一种用于调节微光刻投射曝光设备的水平的方法。 根据本发明的一个方面,根据本发明的方法包括以下步骤:在第一反射镜部段(101)接收之间干涉的第一部分反射波和上基准表面(110,310,510)所反射的参考波,接收第二部分 在第二反射镜部段(102)之间的干涉反射的参考表面上的波和一个(110,310,510)所反射的参考波,检测相位的第一干涉和第二部分干涉,并且第一反射镜区段的调整之间的偏移量(101 )和这样确定的第二反射镜部段(102),以彼此的相位的偏移量的基础上,在各表面法线在上反射镜区段的每个点的虚构预定目标区域的方向上的相应的反射镜部分(101,102)的距离小于λ/ 10 其中bezeλ为工作波长 ichnet。
    • 8. 发明申请
    • PROJECTION OBJECTIVE OF A MICROLITHOGRAPHIC EXPOSURE APPARATUS
    • 微观曝光装置的投影目标
    • WO2012059537A1
    • 2012-05-10
    • PCT/EP2011/069308
    • 2011-11-03
    • CARL ZEISS SMT GMBHENKISCH, HartmutMUELLENDER, StephanMANN, Hans-JuergenFREIMANN, Rolf
    • ENKISCH, HartmutMUELLENDER, StephanMANN, Hans-JuergenFREIMANN, Rolf
    • G03F7/20
    • G03F7/702G02B7/198G03F7/70233G03F7/70308
    • The invention concerns a projection objective of a microlithographic projection exposure apparatus designed for EUV, for imaging an object plane illuminated in operation of the projection exposure apparatus into an image plane, wherein the projection objective has at least one mirror segment arrangement (160, 260, 280, 310, 410, 500) comprising a plurality of separate mirror segments (161 -163; 261-266, 281 -284; 31 1, 312; 41 1, 412; 510-540); and wherein associated with the mirror segments of the same mirror segment arrangement are partial beam paths which are different from each other and which respectively provide for imaging of the object plane (OP) into the image plane (IP), wherein said partial beam paths are superposed in the image plane (IP) and wherein at least two partial beams which are superposed in the same point in the image plane (IP) were reflected by different mirror segments of the same mirror segment arrangement.
    • 本发明涉及一种用于EUV设计的微光刻投影曝光装置的投影目标,用于将在投影曝光装置的操作中照亮的物体成像成像面,其中投影物镜具有至少一个镜片段布置(160,260, 包括多个分离的镜片段(161-163; 261-266,281-284; 31 1,312; 41 1,412; 510-540); 并且其中与相同镜片段布置的镜片段相关联的部分光束路径彼此不同并且分别提供用于将物平面(OP)成像到图像平面(IP)中的部分光束路径,其中所述部分光束路径为 叠加在图像平面(IP)中,并且其中叠加在图像平面(IP)中的相同点上的至少两个部分光束被相同镜像段布置的不同镜像段反射。
    • 9. 发明申请
    • MIRROR, PROJECTION OBJECTIVE COMPRISING SUCH A MIRROR, AND PROJECTION EXPOSURE APPARATUS FOR MICROLITHOGRAPHY COMPRISING SUCH A PROJECTION OBJECTIVE
    • 镜子,包括这种镜子的投影目标和投影曝光装置,用于包含这样的投影目标的微型计算机
    • WO2012041697A1
    • 2012-04-05
    • PCT/EP2011/065873
    • 2011-09-13
    • CARL ZEISS SMT GMBHFREIMANN, RolfBAER, NormanLIMBACH, GuidoBOEHM, ThureWITTICH, Gero
    • FREIMANN, RolfBAER, NormanLIMBACH, GuidoBOEHM, ThureWITTICH, Gero
    • G21K1/06
    • G02B5/0891B82Y10/00G03F7/70316G03F7/70958G21K1/062G21K2201/061
    • The invention relates to a mirror (la; la'; lb; lb'; lc; lc') comprising a substrate (S) and a layer arrangement, wherein the layer arrangement is designed in such a way that light (32) having a wavelength of less than 250 nm that is incident on the mirror (la; la'; lb; lb'; lc; lc') at at least an angle of incidence of between 0° and 30° is reflected with more than 20% of its intensity, and the layer arrangement comprises at least one surface layer system (Ρ"') consisting of a periodic sequence of at least two periods (P3) of individual layers, wherein the periods (P3) comprise two individual layers composed of different materials for a high refractive index layer (Η"') and a low refractive index layer (L'"), wherein the layer arrangement comprises at least one layer (G, SPL, B) composed of graphene. Furthermore, the invention relates to the use of graphene (G, SPL, B) on optical elements for reducing the surface roughness to less than 0.1 nm rms HSFR and/or for protecting the optical element in the EUV wavelength range against a radiation-induced irreversible change in volume of more than 1% and/or as a barrier layer for preventing interdiffusion between layers of so-called multilayer layer mirrors in the EUV wavelength range.
    • 本发明涉及一种包括衬底(S)和层布置的反射镜(1a; 1a'; 1b; 1b; 1c; 1c),其中所述层布置被设计成使得具有 入射在反射镜(1a; 1a'; lb; lb'; lc; lc')上的小于250nm的波长在0°至30°之间的入射角至少有20%以上 其强度和层布置包括由各层的至少两个周期(P3)的周期性序列组成的至少一个表层系统(“),其中周期(P3)包括由不同材料组成的两个单独层 对于高折射率层(α“')和低折射率层(L'”),其中层布置包括由石墨烯组成的至少一层(G,SPL,B),此外,本发明涉及 在光学元件上使用石墨烯(G,SPL,B)将表面粗糙度降低到小于0.1nm rms HSFR和/或用于保护光学元件 EUV波长范围内的α元素相对于辐射诱发的不可逆体积变化大于1%和/或作为阻挡层用于防止EUV波长范围内所谓的多层反射镜层之间的相互扩散。
    • 10. 发明申请
    • APPARATUS AND METHOD FOR THE LOCALLY RESOLVED MEASUREMENT OF A RADIATION DISTRIBUTION PRODUCED USING A LITHOGRAPHY MASK
    • 使用LITHOGRAPHY MASK产生的辐射分布的局部分辨率测量的装置和方法
    • WO2011157407A1
    • 2011-12-22
    • PCT/EP2011/002933
    • 2011-06-15
    • CARL ZEISS SMT GMBHFREIMANN, Rolf
    • FREIMANN, Rolf
    • G03F7/20
    • G01N21/9515G01T1/16G01T1/2006G03F7/70591G03F7/70666G03F7/7085
    • A method for the locally resolved measurement of a radiation distribution (24) produced using a lithography mask (16) comprises providing a radiation converter (31, 131) having an at least two-dimensional arrangement of converter elements (32, 132) which can respectively be put in an active and a passive state, and are configured to convert incoming radiation in respect of its wavelength in the active state. The method further comprises: manipulating the radiation converter (31, 131) several times such that respectively only a fraction of the converter elements (32, 132) adopts the active state, irradiating the radiation converter (31, 131) with the radiation distribution (24) after every manipulation of the radiation converter (31, 131) so that the active converter elements (32, 132) emit wavelength- converted measuring radiation (34), recording respective places of origin (54) of the measuring radiation at every irradiation with the radiation distribution (24). Moreover, the radiation distribution (24) produced by the lithography mask (16) is determined from the places of origin (54) recorded with the different irradiation steps.
    • 使用光刻掩模(16)产生的辐射分布(24)的局部解析测量的方法包括提供具有至少二维排列的转换器元件(32,132)的辐射转换器(31,131),其可以 分别被置于主动和被动状态,并被配置成相对于处于活动状态的波长转换入射辐射。 该方法还包括:多次操纵辐射转换器(31,131),使得分别只有一部分转换器元件(32,132)采用活动状态,用辐射分布(31,131)照​​射辐射转换器 24)在辐射转换器(31,131)的每次操纵之后,使得有源转换器元件(32,132)发射波长转换测量辐射(34),在每次照射下记录测量辐射的原点(54) 与辐射分布(24)。 此外,由光刻掩模(16)产生的辐射分布(24)由从不同照射步骤记录的原点位置(54)确定。