专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2004107386A2 METHOD AND SYSTEM FOR ION BEAM CONTAINMENT IN AN ION BEAM GUIDE 审中-公开
标题翻译：离子束指南中离子束容纳的方法和系统
公开(公告)号：WO2004107386A2
公开(公告)日：2004-12-09
申请号：PCT/US2004/016073
申请日：2004-05-21
申请人： AXCELIS TECHNOLOGIES INC. , YE, John Zheng , BENVENISTE, Victor , CRISTOFORO, Michael
发明人： YE, John Zheng , BENVENISTE, Victor , CRISTOFORO, Michael
IPC分类号： H01J37/00
CPC分类号： H01J37/05 , H01J37/147 , H01J37/3171 , H01J37/32623 , H01J37/32678 , H01J2237/1508
摘要： Ion implantation systems and beamline assemblies therefor are provided, in which multi-cusped magnetic fields are provided in a beamguide and the beamguide is energized to provide microwave electric fields in a traveling wave along the beamguide passageway. The magnetic and electric fields interact to provide an electron-cyclotron resonance condition for beam containment in the beamguide passageway.
摘要翻译：提供了离子注入系统和其束线组件，其中在光束导向器中设置多通道磁场，并且激光束导向器沿着光束通道在行波中提供微波电场。磁场和电场相互作用，为光束通道中的光束收容提供电子回旋共振条件。

2. 发明申请

WO2004095477A2 HIGH-PERFORMANCE ELECTROSTATIC CLAMP COMPRISING A RESISTIVE LAYER, MICRO-GROOVES, AND DIELECTRIC LAYER 审中-公开
标题翻译：包含电阻层，微孔和电介质层的高性能静电夹
公开(公告)号：WO2004095477A2
公开(公告)日：2004-11-04
申请号：PCT/US2004/012549
申请日：2004-04-21
申请人： AXCELIS TECHNOLOGIES INC. , KELLERMAN, Peter , BENVENISTE, Victor , PHARAND, Michel , STONE, Dale
发明人： KELLERMAN, Peter , BENVENISTE, Victor , PHARAND, Michel , STONE, Dale
IPC分类号： H01G
CPC分类号： H01L21/6833 , H02N13/00
摘要： An electrostatic clamp for securing a semiconductor wafer during processing. The electrostatic clamp comprises a base member, a resistive layer, a dielectric layer including a gas pressure distribution micro-groove network, a gas gap positioned between a backside of a semiconductor wafer and the dielectric layer, and a pair of high voltage electrodes positioned between the resistive layer and the dielectric layer. The electrostatic clamp can further comprise at least one ground electrode positioned between the resistive layer and the dielectric layer that provides shielding for the gas pressure distribution micro-groove network. The electrostatic clamp is characterized by a heat transfer coefficient of greater than or about 200 mW/Kcm 2 , a response time of less than or about 1 second, and gas leakage of less than or about 0.5 sccm. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. .
摘要翻译：一种用于在加工过程中固定半导体晶片的静电夹。静电夹具包括基底构件，电阻层，包括气体压力分布微槽网络的电介质层，位于半导体晶片的背面与电介质层之间的气隙，以及一对位于电阻层和电介质层。静电夹具还可以包括位于电阻层和电介质层之间的至少一个接地电极，其为气体压力分布微槽网络提供屏蔽。静电夹具的特征在于传热系数大于或约200mW / Kcm 2，响应时间小于或约1秒，气体泄漏小于或约0.5sccm。要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。。

3. 发明申请

WO2006049817A2 SYSTEMS AND METHODS FOR ION BEAM FOCUSING 审中-公开
标题翻译：离子束聚焦的系统和方法
公开(公告)号：WO2006049817A2
公开(公告)日：2006-05-11
申请号：PCT/US2005/036509
申请日：2005-10-12
申请人： AXCELIS TECHNOLOGIES, INC. , BENVENISTE, Victor , KELLERMAN, Peter
发明人： BENVENISTE, Victor , KELLERMAN, Peter
CPC分类号： H01J37/3171 , H01J37/147
摘要： Systems and methods are provided for focusing a scanned ion beam in an ion implanter. A beam focusing system is provided, comprising first and second magnets providing corresponding magnetic fields that cooperatively provide a magnetic focusing field having a time-varying focusing field center generally corresponding to a time-varying beam position of a scanned ion beam along a scan direction. Methods are presented, comprising providing a focusing field having a focusing field center in the scan plane, and dynamically adjusting the focusing field such that the focusing field center is generally coincident with a time-varying beam position of the scanned ion beam along the scan direction.
摘要翻译：提供了将扫描离子束聚焦在离子注入机中的系统和方法。提供了一种束聚焦系统，包括提供相应磁场的第一和第二磁体，其协作地提供磁聚焦场，其具有通常对应于扫描离子束沿扫描方向的时变束位置的时变聚焦场中心。提出了方法，其包括提供在扫描平面中具有聚焦场中心的聚焦场，以及动态地调整聚焦场，使得聚焦场中心大体上与扫描离子束沿着扫描方向的时变束位置重合。

4. 发明申请

WO2005098894A1 METHOD AND APPARATUS FOR SELECTIVE PRE-DISPERSION OF EXTRACTED ION BEAMS IN ION IMPLANTATION SYSTEMS 审中-公开
标题翻译：用于离子植入系统中提取离子束的选择性预分散的方法和装置
公开(公告)号：WO2005098894A1
公开(公告)日：2005-10-20
申请号：PCT/US2005/011328
申请日：2005-04-01
申请人： AXCELIS TECHNOLOGIES, INC. , BENVENISTE, Victor
发明人： BENVENISTE, Victor
IPC分类号： H01J37/05
CPC分类号： H01J37/05 , H01J37/3171
摘要： Ion implantation systems are provided, comprising a dispersion system (140) located between an ion source (120) and a mass analyzer (26), that operates to selectively pass an extracted ion beam from the ion source toward the mass analyzer or to direct a dispersed ion beam toward the mass analyzer, where the dispersed ion beam has fewer ions of an undesired mass range than the extracted ion beam.
摘要翻译：提供离子注入系统，其包括位于离子源（120）和质量分析器（26）之间的分散系统（140），其操作以选择性地将离子源从离子源向质量分析器传递，或者引导分散的离子束朝向质量分析器，其中分散的离子束具有比提取的离子束更少的不期望质量范围的离子。

5. 发明申请

WO2004114358A3 THIN MAGNETRON STRUCTURES FOR PLASMA GENERATION IN ION IMPLANTATION SYSTEMS 审中-公开
公开(公告)号：WO2004114358A3
公开(公告)日：2004-12-29
申请号：PCT/US2004/019588
申请日：2004-06-18
申请人： AXCELIS TECHNOLOGIES INC. , BENVENISTE, Victor , DEVERGILIO, William , VANDERBERG, Bo
发明人： BENVENISTE, Victor , DEVERGILIO, William , VANDERBERG, Bo
IPC分类号： H01J37/317
摘要： A plasma generator for space charge neutralization of an ion beam is disclosed and resides within an ion implantation system operable to generate an ion beam and direct the ion beam along a beamline path. The plasma generator comprises an electric field generation system operable to generate an electric field in a portion of the beamline path, and a magnetic field generation system operable to generate a magnetic field in the portion of the beamline path, wherein the magnetic field is perpendicular to the electric field. The plasma generator further comprises a gas source operable to introduce a gas in a region occupied by the electric field and the magnetic field. Electrons in the region move in the region due to the electric field and the magnetic field, respectively, and at least some of the electrons collide with the gas in the region to ionize a portion of the gas, thereby generating a plasma in the region.

6. 发明申请

WO2006074200A2 ION BEAM SCANNING CONTROL METHODS AND SYSTEMS FOR ION IMPLANTATION UNIFORMITY 审中-公开
标题翻译：离子束扫描控制方法和系统用于离子植入均匀性
公开(公告)号：WO2006074200A2
公开(公告)日：2006-07-13
申请号：PCT/US2006/000141
申请日：2006-01-04
申请人： AXCELIS TECHNOLOGIES, INC. , BENVENISTE, Victor , DIVERGILIO, William , KELLERMAN, Peter
发明人： BENVENISTE, Victor , DIVERGILIO, William , KELLERMAN, Peter
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J2237/31703
摘要： Methods are provided for calibrating an ion beam scanner in an ion implantation system, comprising measuring a plurality of initial current density values at a plurality of locations along a scan direction, where the values individually correspond to one of a plurality of initial voltage scan intervals and one of a corresponding plurality of initial scan time values, creating a system of linear equations based on the measured initial current density values and the initial voltage scan intervals, and determining a set of scan time values that correspond to a solution to the system of linear equations that reduces current density profile deviations. A calibration system is provided for calibrating an ion beam scanner in an ion implantation system, comprising a dosimetry system and a control system.
摘要翻译：提供了用于在离子注入系统中校准离子束扫描器的方法，包括在沿着扫描方向的多个位置处测量多个初始电流密度值，其中所述值分别对应于多个初始电压扫描间隔中的一个，以及相应的多个初始扫描时间值中的一个，基于测量的初始电流密度值和初始电压扫描间隔创建线性方程组，并且确定与线性系统的解的对应的一组扫描时间值减小电流密度分布偏差的方程式。提供校准系统用于在离子注入系统中校准离子束扫描器，包括剂量测定系统和控制系统。

7. 发明申请

WO2004088732A1 GAS-COOLED CLAMP FOR RAPID THERMAL PROCESSING 审中-公开
标题翻译：用于快速热处理的气体冷却夹具
公开(公告)号：WO2004088732A1
公开(公告)日：2004-10-14
申请号：PCT/US2004/009891
申请日：2004-03-29
申请人： AXCELIS TECHNOLOGIES INC. , KELLERMAN, Peter , BENVENISTE, Victor , CARLSON, Frederick
发明人： KELLERMAN, Peter , BENVENISTE, Victor , CARLSON, Frederick
IPC分类号： H01L21/00
CPC分类号： H01L21/68721 , C23C16/4586 , C23C16/463 , H01L21/67109 , H01L21/6875 , Y10T279/23
摘要： The present invention is directed to a semiconductor thermal processing apparatus and a method for thermally cooling a semiconductor substrate. According to one aspect of the present invention, a gas-cooled clamp and associated method is disclosed which provides cooling of a substrate by thermal conduction generally in the free molecular regime. The gas-cooled clamp comprises a clamping plate having a plurality of protrusions that define gaps therebetween, wherein a distance or depth of the gaps are associated with a mean free path of the cooling gas therein. The gas-cooled clamp further comprises a pressure control system operable to control a backside pressure of the cooling gas within the plurality of gaps to thus control a heat transfer coefficient of the cooling gas, wherein the heat transfer coefficient of the cooling gas is primarily a function of the pressure and substantially independent of the gap distance.
摘要翻译：本发明涉及一种用于半导体衬底的热冷却的半导体热处理设备和方法。根据本发明的一个方面，公开了一种气冷夹和相关方法，其通常通过自由分子状态的热传导来提供衬底的冷却。气冷夹具包括夹板，该夹板具有限定其间的间隙的多个突起，其中间隙的距离或深度与其中的冷却气体的平均自由程度相关联。气冷夹具还包括压力控制系统，其可操作以控制多个间隙内的冷却气体的背侧压力，从而控制冷却气体的传热系数，其中冷却气体的传热系数主要为功能的压力和基本上与间隙距离无关。

8. 发明申请

WO2004064100A2 MOUNTING MECHANISM FOR PLASMA EXTRACTION APERTURE 审中-公开
标题翻译：等离子体萃取孔安装机理
公开(公告)号：WO2004064100A2
公开(公告)日：2004-07-29
申请号：PCT/US2004/000190
申请日：2004-01-07
申请人： AXCELIS TECHNOLOGIES INC. , BENVENISTE, Victor
发明人： BENVENISTE, Victor
IPC分类号： H01J
CPC分类号： H01J37/08 , H01J2237/31701
摘要： An improved electrode subassembly for an ion implanter is provided. The subassembly comprises (i) a first generally planar electrode residing in a first plane and having a first aperture; (ii) a second generally planar electrode residing in a second plane generally parallel to the first plane and having a second aperture aligned with the first aperture; and (iii) a pair of connecting rods connecting the first generally planar electrode to the second generally planar electrode. The connecting rods permit generally parallel and slidable movement of the second generally planar electrode with respect to the first generally planar electrode. The connecting rods are positioned in a non-parallel relationship to each other, so that the first and second electrodes when undergoing thermal expansion slide with respect to each other upon the non-parallel connecting rods, to increase or decrease a distance therebetween, while maintaining a parallel relationship.
摘要翻译：提供了用于离子注入机的改进的电极子组件。子组件包括（i）驻留在第一平面中并具有第一孔的第一大致平面的电极; （ii）位于大致平行于第一平面并具有与第一孔对准的第二孔的第二平面中的第二大体平面电极; 和（iii）将第一大致平面的电极连接到第二大致平面的电极的一对连接杆。连接杆允许第二大体上平面的电极相对于第一大致平面的电极大致平行且可滑动地移动。连接杆以不平行的关系定位，使得第一和第二电极在经历热膨胀时在非平行的连接杆上相对于彼此滑动，以增加或减少它们之间的距离，同时保持一个平行的关系。

9. 发明申请

WO2007136722A3 NEW AND IMPROVED ION SOURCE 审中-公开
公开(公告)号：WO2007136722A3
公开(公告)日：2007-11-29
申请号：PCT/US2007/011863
申请日：2007-05-17
申请人： AXCELIS TECHNOLOGIES, INC. , VANDERBERG, Bo , BENVENISTE, Victor , FALLON, John , POKIDOV, Ilya
发明人： VANDERBERG, Bo , BENVENISTE, Victor , FALLON, John , POKIDOV, Ilya
IPC分类号： H01J37/317 , H01J27/02 , H01J37/08 , H01J27/08
摘要： An exemplary ion source (12) for creating a stream of ions has an aluminum alloy arc chamber body (76) that at least partially bounds an ionization region (R) of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode (124) to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. Λ temperature sensor monitors temperatures within the arc chamber (76) and provides a signal related to sensed temperature. A controller monitors sensed temperature as measured by the sensor and adjusts the temperature to maintain the sensed temperature within a range.

10. 发明申请

WO2006126997A1 TWO DIMENSIONAL STATIONARY BEAM PROFILE AND ANGULAR MAPPING 审中-公开
标题翻译：两维静态光束轮廓和角度映射
公开(公告)号：WO2006126997A1
公开(公告)日：2006-11-30
申请号：PCT/US2005/018083
申请日：2005-05-23
申请人： AXCELIS TECHNOLOGIES, INC. , BENVENISTE, Victor
发明人： BENVENISTE, Victor
IPC分类号： H01J37/317 , H01J37/244
CPC分类号： H01J37/3171 , H01J2237/244 , H01J2237/24507 , H01J2237/24528 , H01J2237/304 , H01J2237/31703
摘要： An ion beam uniformity detector (300) of the present invention includes a number of horizontal rods (302) and a number of vertical rods (301) placed on parallel planes and separated by a selected distance. Crossover measurement points are defined by intersections of the horizontal and vertical rods. By selectively and sequentially applying a pulse to the vertical rods and concurrently biasing horizontal rods, measurements can be obtained for the crossover measurement points, which can then be employed to determine ion beam shape and ion beam intensity at the crossover measurement points. Based on these measurements, adjustments can be made to a continuing ion implantation process in order to increase uniformity with respect to intensity as well as to provide a desired beam shape. Additionally, pairs of vertical and horizontal rods can be employed to also obtain measurements that indicate angle of incidence in two dimensions at the various crossover points.
摘要翻译：本发明的离子束均匀性检测器（300）包括多个水平杆（302）和多个垂直杆（301），放置在平行平面上并分离出选定的距离。交叉测量点由水平杆和垂直杆的交点定义。通过选择性地并且顺序地向垂直杆施加脉冲并且同时偏置水平杆，可以获得交叉测量点的测量值，然后可以采用该测量点来确定交叉测量点处的离子束形状和离子束强度。基于这些测量，可以进行连续离子注入工艺的调整，以便增加相对于强度的均匀性以及提供期望的光束形状。此外，可以使用成对的垂直杆和水平杆来获得在各个交叉点处二维地指示入射角的测量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式