专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2008133796A1 METHOD AND SYSTEM FOR ION BEAM PROFILING 审中-公开
标题翻译：离子光谱分析方法与系统
公开(公告)号：WO2008133796A1
公开(公告)日：2008-11-06
申请号：PCT/US2008/004374
申请日：2008-04-03
申请人： AXCELIS TECHNOLOGIES, INC. , GRAF, Michael , YE, John , VANDERBERG, Bo , CRISTOFORO, Michael , HUANG, Yongzhang
发明人： GRAF, Michael , YE, John , VANDERBERG, Bo , CRISTOFORO, Michael , HUANG, Yongzhang
IPC分类号： H01J37/244 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/244 , H01J37/304 , H01J2237/24405 , H01J2237/2446 , H01J2237/24507 , H01J2237/24542 , H01J2237/24578 , H01J2237/30477
摘要： One embodiment of the invention relates to an apparatus for profiling an ion beam. The apparatus includes a current measuring device having a measurement region, wherein a cross-sectional area of the ion beam enters the measurement region. The apparatus also includes a controller configured to periodically take beam current measurements of the ion beam and to determine a two dimensional profile of the ion beam by relating the beam current measurements to sub-regions within the current measuring device. Other apparatus and methods are also disclosed.
摘要翻译：本发明的一个实施例涉及一种用于对离子束进行成像的装置。该装置包括具有测量区域的电流测量装置，其中离子束的横截面面积进入测量区域。该装置还包括控制器，其被配置为周期性地对离子束进行束电流测量并且通过将束电流测量值与当前测量装置内的子区域相关联来确定离子束的二维轮廓。还公开了其它装置和方法。

2. 发明申请

WO2009061485A1 PLASMA ELECTRON FLOOD FOR ION BEAM IMPLANTER 审中-公开
标题翻译：用于离子束植绒的等离子体电子水
公开(公告)号：WO2009061485A1
公开(公告)日：2009-05-14
申请号：PCT/US2008/012599
申请日：2008-11-06
申请人： AXCELIS TECHNOLOGIES, INC , VANDERBERG, Bo , DIVERGILIO, William
发明人： VANDERBERG, Bo , DIVERGILIO, William
IPC分类号： H01J37/077 , H01J3/00 , H01J37/02 , H01J37/317
CPC分类号： H01J37/026 , H01J37/3171 , H01J2237/0041 , H01J2237/06366
摘要： A plasma electron flood system, comprising a housing configured to contain a gas, and comprising an elongated extraction slit, and a cathode and a plurality of anodes residing therein and wherein the elongated extraction slit is in direct communication with an ion implanter, wherein the cathode emits electrons that are drawn to the plurality of anodes through a potential difference therebetween, wherein the electrons are released through the elongated extraction slit as an electron band for use in neutralizing a ribbon ion beam traveling within the ion implanter.
摘要翻译：一种等离子体电子泛洪系统，包括构造成容纳气体的壳体，并且包括细长的提取狭缝以及驻留在其中的阴极和多个阳极，并且其中所述细长的提取狭缝与离子注入机直接连通，其中所述阴极发射通过它们之间的电位差吸引到多个阳极的电子，其中电子通过细长的提取狭缝释放，作为用于中和在离子注入机内行进的带状离子束的电子带。

3. 发明申请

WO2008042094A3 NEW AND IMPROVED BEAM LINE ARCHITECTURE FOR ION IMPLANTER 审中-公开
公开(公告)号：WO2008042094A3
公开(公告)日：2008-04-10
申请号：PCT/US2007/019904
申请日：2007-09-13
申请人： AXCELIS TECHNOLOGIES, INC. , VANDERBERG, Bo , SPLINTER, Patrick
发明人： VANDERBERG, Bo , SPLINTER, Patrick
IPC分类号： H01J37/147 , H01J37/317
摘要： A parallelizing component (439) of an ion implantation system (410) comprises two angled dipole magnets (439a, 439b) that mirror one another and serve to bend an ion beam (424) traversing therethrough to have a substantially "s" shape. This s bend serves to filter out contaminants of the beam, while the dipoles also parallelize the beam to facilitate uniform implant properties across the wafer (430), such as implant angle, for example. Additionally, a " deceleration stage (457) is included toward the end of the implantation system so that the energy of the beam can be kept relatively high throughout the beamlihe to mitigate beam blowup.

4. 发明申请

WO2007120623A2 ION BEAM SCANNING CONTROL METHODS AND SYSTEMS FOR ION IMPLANTATION UNIFORMITY 审中-公开
标题翻译：离子注入均匀性的离子束扫描控制方法和系统
公开(公告)号：WO2007120623A2
公开(公告)日：2007-10-25
申请号：PCT/US2007/008784
申请日：2007-04-10
申请人： AXCELIS TECHNOLOGIES, INC. , BENVENISTE, Vistor , EISNER, Edward , VANDERBERG, Bo
发明人： BENVENISTE, Vistor , EISNER, Edward , VANDERBERG, Bo
CPC分类号： H01J37/3171 , G21K5/04 , H01J37/304 , H01J2237/24507 , H01J2237/3045 , H01J2237/30455 , H01J2237/31703
摘要： One embodiment of the invention relates to a method for adjusting the ribbon beam flux of a scanned ion beam. In this method, an ion beam is scanned at a scan rate, and a plurality of dynamic beam profiles are measured as the ion beam is scanned. A corrected scan rate is calculated based on the plurality of measured dynamic beam profiles of the scanned beam. The ion beam is scanned at the corrected scan rate to produce a corrected ribbon ion beam. Other methods and systems are also disclosed.
摘要翻译：本发明的一个实施例涉及用于调节扫描离子束的带状束通量的方法。在该方法中，以扫描速率扫描离子束，并且在扫描离子束时测量多个动态射束轮廓。基于扫描光束的多个测量的动态光束轮廓来计算校正的扫描速率。以校正的扫描速率扫描离子束以产生经校正的带状离子束。其他方法和系统也被公开。

5. 发明申请

WO2007064515A2 MEANS TO ESTABLISH ORIENTATION OF ION BEAM TO WAFER AND CORRECT ANGLE ERRORS 审中-公开
标题翻译：意味着建立离子束到波形和正确角度误差的方向
公开(公告)号：WO2007064515A2
公开(公告)日：2007-06-07
申请号：PCT/US2006/044891
申请日：2006-11-17
申请人： AXCELIS TECHNOLOGIES, INC. , RATHMELL, Robert , VANDERBERG, Bo
发明人： RATHMELL, Robert , VANDERBERG, Bo
CPC分类号： H01J37/3171 , H01J37/244 , H01J2237/24507 , H01J2237/24528 , H01J2237/24578 , H01J2237/31703
摘要： One or more aspects of the present invention pertain to a measurement component that facilitates determining a relative orientation between an ion beam and a workpiece. The measurement component is sensitive to ion radiation and allows a relative orientation between the measurement component and the ion beam to be accurately determined by moving the measurement component relative to the ion beam. The measurement component is oriented at a known relationship relative to the workpiece so that a relative orientation between the workpiece and beam can be established. Knowing the relative orientation between the ion beam and workpiece allows the workpiece to be oriented to a specific angle relative to the measured beam angle for more accurate and precise doping of the workpiece, which enhances semiconductor fabrication.
摘要翻译：本发明的一个或多个方面涉及有助于确定离子束和工件之间的相对取向的测量部件。测量部件对离子辐射敏感，并允许通过相对于离子束移动测量部件来精确地确定测量部件和离子束之间的相对取向。测量部件相对于工件以已知的关系定向，从而可以建立工件和梁之间的相对取向。了解离子束和工件之间的相对取向允许工件相对于测量的光束角定向到特定的角度，以更准确和精确地掺杂工件，这增强了半导体制造。

6. 发明申请

WO2011136851A1 MAGNETIC SCANNING SYSTEM WITH IMPROVED EFFICIENCY 审中-公开
标题翻译：具有提高效率的磁扫描系统
公开(公告)号：WO2011136851A1
公开(公告)日：2011-11-03
申请号：PCT/US2011/000736
申请日：2011-04-27
申请人： AXCELIS TECHNOLOGIES INC. , VANDERBERG, Bo
发明人： VANDERBERG, Bo
IPC分类号： H01J37/147 , H01J37/317
CPC分类号： H01J37/1475 , H01J37/3171 , H01J2237/1523 , H01J2237/1526
摘要： Some aspects of the present invention facilitate ion implantation by using a magnetic beam scanner (106, 300) that includes first and second magnetic elements having a beam path region therebetween. One or more magnetic flux compression elements (140a, b, 302, 304) are disposed proximate to the beam path region and between the first and second magnetic elements. During operation, the first and magnetic elements cooperatively generate an oscillatory time-varying magnetic field in the beam path region to scan an ion beam back and forth in time. The one or more magnetic flux compression elements compress the magnetic flux provided by the first and second magnetic elements, thereby reducing the amount of power required to magnetically scan the beam back and forth (relative to previous implementations). Other scanners, systems, and methods are also disclosed.
摘要翻译：本发明的一些方面通过使用包括其间具有光束路径区域的第一和第二磁性元件的磁束扫描器（106,300）来促进离子注入。一个或多个磁通量压缩元件（140a，b，302,304）设置在光束路径区域附近以及第一和第二磁性元件之间。在操作期间，第一和磁性元件协同地在光束路径区域中产生振荡时变磁场，以及时扫描离子束。一个或多个磁通量压缩元件压缩由第一和第二磁性元件提供的磁通量，从而减少磁力扫描光束所需的功率量（相对于先前的实施方式）。还公开了其他扫描仪，系统和方法。

7. 发明申请

WO2010011252A1 METHOD AND APPARATUS FOR MEASUREMENT OF BEAM ANGLE IN ION IMPLANTATION 审中-公开
标题翻译：用于测量离子植入中的光束角的方法和装置
公开(公告)号：WO2010011252A1
公开(公告)日：2010-01-28
申请号：PCT/US2009/003743
申请日：2009-06-23
申请人： AXCELIS TECHNOLOGIES, INC. , MITCHELL, Robert , VANDERBERG, Bo
发明人： MITCHELL, Robert , VANDERBERG, Bo
IPC分类号： H01J37/317 , H01J37/147 , H01J37/304
CPC分类号： H01J37/1471 , H01J37/304 , H01J37/3171 , H01J2237/24507 , H01J2237/24528 , H01J2237/24578
摘要： An ion beam angle detection apparatus (440), comprising a linear drive assembly (460) fixedly attached to a moveable profiler assembly (450), wherein the profiler assembly comprises, a profiler having a profiler aperture (454) formed within a profiler top plate (455) and a profiler sensor assembly, a moveable angle mask assembly (446) comprising a moveable angle mask with a mask aperture (448), wherein the angle mask assembly is non-fixedly attached to the profiler assembly, the mask aperture is movable relative to the profiler aperture by energizing an mask linear drive (464) fixedly attached to the profiler assembly and the profiler aperture is movable through a length greater than the elongated length of the ion beam (456).
摘要翻译：一种离子束角度检测装置（440），其包括固定地连接到可移动轮廓仪组件（450）的线性驱动组件（460），其中所述轮廓仪组件包括：轮廓仪，其具有形成在轮廓仪顶板内的轮廓仪孔（455）和轮廓仪传感器组件，可移动角度掩模组件（446），其包括具有掩模孔（448）的可移动角度掩模，其中所述角度掩模组件不固定地附接到所述轮廓仪组件，所述掩模孔可移动相对于轮廓仪孔径，通过激励固定地附接到轮廓仪组件的掩模线性驱动器（464），并且轮廓仪孔径可移动通过大于离子束（456）的细长长度的长度。

8. 发明申请

WO2007145849A3 BEAM ANGLE ADJUSTMENT IN ION IMPLANTERS 审中-公开
公开(公告)号：WO2007145849A3
公开(公告)日：2007-12-21
申请号：PCT/US2007/012934
申请日：2007-06-01
申请人： AXCELIS TECHNOLOGIES, INC. , VANDERBERG, Bo , XIANGYANG, Wu
发明人： VANDERBERG, Bo , XIANGYANG, Wu
IPC分类号： H01J37/147 , H01J37/317
摘要： A steering element is included in an ion implantation system to direct or "steer" an ion beam (624) to a scan vertex (651) of a scanning element (636) downstream of the steering element. In this manner, the scan vertex of the scanning element coincides with the focal point of a parallelizing element (630) downstream of the scanning element. This allows the beam to emerge from the parallelizing element at an expected angle so that ions can be implanted in a desired manner into a workpiece located downstream of the parallelizing element.

9. 发明申请

WO2004114358A3 THIN MAGNETRON STRUCTURES FOR PLASMA GENERATION IN ION IMPLANTATION SYSTEMS 审中-公开
公开(公告)号：WO2004114358A3
公开(公告)日：2004-12-29
申请号：PCT/US2004/019588
申请日：2004-06-18
申请人： AXCELIS TECHNOLOGIES INC. , BENVENISTE, Victor , DEVERGILIO, William , VANDERBERG, Bo
发明人： BENVENISTE, Victor , DEVERGILIO, William , VANDERBERG, Bo
IPC分类号： H01J37/317
摘要： A plasma generator for space charge neutralization of an ion beam is disclosed and resides within an ion implantation system operable to generate an ion beam and direct the ion beam along a beamline path. The plasma generator comprises an electric field generation system operable to generate an electric field in a portion of the beamline path, and a magnetic field generation system operable to generate a magnetic field in the portion of the beamline path, wherein the magnetic field is perpendicular to the electric field. The plasma generator further comprises a gas source operable to introduce a gas in a region occupied by the electric field and the magnetic field. Electrons in the region move in the region due to the electric field and the magnetic field, respectively, and at least some of the electrons collide with the gas in the region to ionize a portion of the gas, thereby generating a plasma in the region.

10. 发明申请

WO2011139340A1 THROUGHPUT ENHANCEMENT FOR SCANNED BEAM ION IMPLANTERS 审中-公开
标题翻译：扫描光束离子植入物的强化增强
公开(公告)号：WO2011139340A1
公开(公告)日：2011-11-10
申请号：PCT/US2011/000735
申请日：2011-04-27
申请人： AXCELIS TECHNOLOGIES INC. , EISNER, Edward , VANDERBERG, Bo
发明人： EISNER, Edward , VANDERBERG, Bo
IPC分类号： H01J37/147 , H01J37/317 , H01J37/302
CPC分类号： H01J37/3171 , H01J37/1472 , H01J37/3026 , H01J2237/30455 , H01J2237/30488 , H01J2237/31703
摘要： An ion implantation method and system for providing greater throughput is disclosed. An ion beam (112) is scanned across the surface of a workpiece at a first scan rate (V slowScan ) when a cross-sectional area of the ion beam is entirely impingent on the surface of the workpiece; and the first scan rate is increased to a second rate (V FastScan ) at a location (214) where a portion of the cross sectional area of the beam extends beyond the outer edge (140) of the workpiece. Some embodiments use a scan pattern where beam flux measurements are taken off-workpiece during actual implantation, and where the implantation routine can be changed in real-time to account for changes in beam flux.
摘要翻译：公开了一种用于提供更大吞吐量的离子注入方法和系统。当离子束的横截面积完全冲击在工件的表面上时，离子束（112）以第一扫描速率（VslowScan）横跨工件的表面扫描; 并且在位置（214）处的第一扫描速率增加到第二速率（VFastScan），其中梁的横截面积的一部分延伸超过工件的外边缘（140）。一些实施例使用扫描模式，其中在实际植入期间将工件的光束通量测量值取消，并且其中可以实时改变注入程序以考虑光束通量的变化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式