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1. 发明申请

WO2007120623A2 ION BEAM SCANNING CONTROL METHODS AND SYSTEMS FOR ION IMPLANTATION UNIFORMITY 审中-公开
标题翻译：离子注入均匀性的离子束扫描控制方法和系统
公开(公告)号：WO2007120623A2
公开(公告)日：2007-10-25
申请号：PCT/US2007/008784
申请日：2007-04-10
申请人： AXCELIS TECHNOLOGIES, INC. , BENVENISTE, Vistor , EISNER, Edward , VANDERBERG, Bo
发明人： BENVENISTE, Vistor , EISNER, Edward , VANDERBERG, Bo
CPC分类号： H01J37/3171 , G21K5/04 , H01J37/304 , H01J2237/24507 , H01J2237/3045 , H01J2237/30455 , H01J2237/31703
摘要： One embodiment of the invention relates to a method for adjusting the ribbon beam flux of a scanned ion beam. In this method, an ion beam is scanned at a scan rate, and a plurality of dynamic beam profiles are measured as the ion beam is scanned. A corrected scan rate is calculated based on the plurality of measured dynamic beam profiles of the scanned beam. The ion beam is scanned at the corrected scan rate to produce a corrected ribbon ion beam. Other methods and systems are also disclosed.
摘要翻译：本发明的一个实施例涉及用于调节扫描离子束的带状束通量的方法。在该方法中，以扫描速率扫描离子束，并且在扫描离子束时测量多个动态射束轮廓。基于扫描光束的多个测量的动态光束轮廓来计算校正的扫描速率。以校正的扫描速率扫描离子束以产生经校正的带状离子束。其他方法和系统也被公开。

2. 发明申请

WO2011139340A1 THROUGHPUT ENHANCEMENT FOR SCANNED BEAM ION IMPLANTERS 审中-公开
标题翻译：扫描光束离子植入物的强化增强
公开(公告)号：WO2011139340A1
公开(公告)日：2011-11-10
申请号：PCT/US2011/000735
申请日：2011-04-27
申请人： AXCELIS TECHNOLOGIES INC. , EISNER, Edward , VANDERBERG, Bo
发明人： EISNER, Edward , VANDERBERG, Bo
IPC分类号： H01J37/147 , H01J37/317 , H01J37/302
CPC分类号： H01J37/3171 , H01J37/1472 , H01J37/3026 , H01J2237/30455 , H01J2237/30488 , H01J2237/31703
摘要： An ion implantation method and system for providing greater throughput is disclosed. An ion beam (112) is scanned across the surface of a workpiece at a first scan rate (V slowScan ) when a cross-sectional area of the ion beam is entirely impingent on the surface of the workpiece; and the first scan rate is increased to a second rate (V FastScan ) at a location (214) where a portion of the cross sectional area of the beam extends beyond the outer edge (140) of the workpiece. Some embodiments use a scan pattern where beam flux measurements are taken off-workpiece during actual implantation, and where the implantation routine can be changed in real-time to account for changes in beam flux.
摘要翻译：公开了一种用于提供更大吞吐量的离子注入方法和系统。当离子束的横截面积完全冲击在工件的表面上时，离子束（112）以第一扫描速率（VslowScan）横跨工件的表面扫描; 并且在位置（214）处的第一扫描速率增加到第二速率（VFastScan），其中梁的横截面积的一部分延伸超过工件的外边缘（140）。一些实施例使用扫描模式，其中在实际植入期间将工件的光束通量测量值取消，并且其中可以实时改变注入程序以考虑光束通量的变化。

3. 发明申请

WO2010033199A1 ADJUSTABLE DEFLECTION OPTICS FOR ION IMPLANTATION 审中-公开
标题翻译：用于离子植入的可调偏差光学
公开(公告)号：WO2010033199A1
公开(公告)日：2010-03-25
申请号：PCT/US2009/005182
申请日：2009-09-17
申请人： AXCELIS TECHNOLOGIES INC. , GRAF, Mike , EISNER, Edward , VANDERBERG, Bo
发明人： GRAF, Mike , EISNER, Edward , VANDERBERG, Bo
IPC分类号： H01J37/147 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/147 , H01J2237/04735 , H01J2237/04756 , H01J2237/049 , H01J2237/12
摘要： A deflection component (236) suitable for use in an ion implantation system comprises multiple electrodes (236a, 236b) that can be selectively biased to cause an ion beam (124) passing therethrough to bend, deflect, focus, converge, diverge, accelerate, decelerate, and/or decontaminate. Since the electrodes can be selectively biased, and thus one or more of them can remain unbiased or off, the effective length of the beam path can be selectively adjusted as desired (e.g., based upon beam properties, such as energy, dose, species, etc. ).
摘要翻译：适合用于离子注入系统的偏转组件（236）包括多个电极（236a，236b），其可被选择性地偏置，以使离子束（124）穿过其中弯曲，偏转，聚焦，发散，加速，减速和/或净化。由于电极可以被选择性地偏置，并且因此它们中的一个或多个可以保持不偏差或截止，可以根据需要选择性地调节光束路径的有效长度（例如，基于光束性质，例如能量，剂量，物种，等等）。

4. 发明申请

WO2008036192A2 SYSTEM AND MAGNETIC SCANNING AND CORRECTION OF AN ION BEAM 审中-公开
标题翻译：离子束的系统和磁性扫描和校正
公开(公告)号：WO2008036192A2
公开(公告)日：2008-03-27
申请号：PCT/US2007/019903
申请日：2007-09-13
申请人： AXCELIS TECHNOLOGIES, INC. , VANDERBERG, Bo , RATHMELL, Robert , EISNER, Edward
发明人： VANDERBERG, Bo , RATHMELL, Robert , EISNER, Edward
IPC分类号： H01J37/317 , H01J37/147
CPC分类号： H01J37/026 , H01J37/1475 , H01J37/3171 , H01J2237/004 , H01J2237/0041 , H01J2237/055
摘要： A magnetic scanner employs constant magnetic fields to mitigate zero field effects. The scanner includes an upper pole piece and a lower pole piece that generate an oscillatory time varying magnetic field across a path of an ion beam and deflect the ion beam in a scan direction. A set of entrance magnets are positioned about an entrance of the scanner and generate a constant entrance magnetic field across the path of the ion beam. A set of exit magnets are positioned about an exit of the scanner and generate a constant exit magnetic field across the path of the ion beam.
摘要翻译：磁扫描仪采用恒定磁场来减轻零场效应。该扫描器包括上极片和下极片，其在离子束的路径上产生振荡时变磁场并使扫描方向偏转离子束。一组入口磁体围绕扫描器的入口定位，并且在离子束的路径上产生恒定的入射磁场。一组出口磁体围绕扫描器的出口定位，并在离子束的路径上产生恒定的出射磁场。

5. 发明申请

WO2008033448A2 SYSTEMS AND METHODS FOR BEAM ANGLE ADJUSTMENT IN ION IMPLANTERS 审中-公开
标题翻译：离子植入物中光束角度调整的系统和方法
公开(公告)号：WO2008033448A2
公开(公告)日：2008-03-20
申请号：PCT/US2007/019902
申请日：2007-09-13
申请人： AXCELIS TECHNOLOGIES, INC. , VANDERBERG, Bo , EISNER, Edward
发明人： VANDERBERG, Bo , EISNER, Edward
CPC分类号： H01J37/3171 , H01J37/1471 , H01J37/1472 , H01J2237/24528
摘要： An ion implantation system employs a mass analyzer for both mass analysis and angle correction. An ion source generates an ion beam along a beam path. A mass analyzer is located downstream of the ion source that performs mass analysis and angle correction on the ion beam. A resolving aperture within an aperture assembly is located downstream of the mass analyzer component and along the beam path. The resolving aperture has a size and shape according to a selected mass resolution and a beam envelope of the ion beam. An angle measurement system is located downstream of the resolving aperture and obtains an angle of incidence value of the ion beam. A control system derives a magnetic field adjustment for the mass analyzer according to the angle of incidence value of the ion beam from the angle measurement system.
摘要翻译：离子注入系统采用质量分析仪进行质量分析和角度校正。离子源沿着光束路径产生离子束。质量分析仪位于离子源的下游，对离子束进行质量分析和角度校正。孔组件内的分辨孔位于质量分析器部件的下游并且沿着光束路径。分辨孔径根据所选质量分辨率和离子束的束包络具有尺寸和形状。角度测量系统位于分辨孔径的下游，并获得离子束的入射角。控制系统根据来自角度测量系统的离子束的入射角度，对质量分析器进行磁场调整。

6. 发明申请

WO2013106220A1 BEAM LINE DESIGN TO REDUCE ENERGY CONTAMINATION 审中-公开
标题翻译：光束线设计，以减少能源污染
公开(公告)号：WO2013106220A1
公开(公告)日：2013-07-18
申请号：PCT/US2013/000017
申请日：2013-01-14
申请人： AXCELIS TECHNOLOGIES, INC. , EISNER, Edward , VANDERBERG, Bo
发明人： EISNER, Edward , VANDERBERG, Bo
IPC分类号： H01J37/317 , H01J37/05 , H01J37/16
CPC分类号： H01J37/147 , G01K5/00 , H01J37/05 , H01J37/16 , H01J37/3171 , H01J2237/0213 , H01J2237/022 , H01J2237/31705
摘要： Methods and apparatus for reducing energy contamination can be provided to a beam line assembly for ion implantation. Protrusions comprising surface areas and grooves therebetween can face neutral trajectories within a line of sight view from the workpiece within the beam line assembly. The protrusions can alter the course of the neutral trajectories away from the workpiece or cause alternate trajectories for further impacting before hitting a workpiece, and thereby, further reduce energy contamination for more sensitive implants.
摘要翻译：可以将用于减少能量污染的方法和装置提供给用于离子注入的束线组件。包括其间的表面区域和凹槽的突起物可以在束线组件内的工件的视线范围内面对中性轨迹。突起可以改变中立轨迹离开工件的过程，或者在撞击工件之前引起交替的轨迹以进一步冲击，从而进一步降低更敏感的植入物的能量污染。

7. 发明申请

WO2013089807A1 SYSTEM AND METHOD FOR ION IMPLANTATION WITH IMPROVED PRODUCTIVITY AND UNIFORMITY 审中-公开
标题翻译：具有改善生产力和均匀性的离子植入系统和方法
公开(公告)号：WO2013089807A1
公开(公告)日：2013-06-20
申请号：PCT/US2012/000575
申请日：2012-12-13
申请人： AXCELIS TECHNOLOGIES, INC. , EISNER, Edward , VANDERBERG, Bo
发明人： EISNER, Edward , VANDERBERG, Bo
IPC分类号： H01J37/317 , H01J37/244 , H01J37/304
CPC分类号： H01J37/3171 , H01J37/244 , H01J37/304 , H01J2237/15 , H01J2237/24405 , H01J2237/24514 , H01J2237/31703
摘要： A scanning system including a scanning element, a beam profiler, analysis system, and a ZFE-limiting element, is disclosed. The scanning element is configured to scan an ion beam over an ion beam scan path. The beam profiler measures beam current of the ion beam as it is scanned over the ion beam scan path, and the analysis system analyzes the measured beam current to detect a ZFE condition. The ZFE-limiting element, which is upstream of the beam profiler and is coupled to the analysis system via a feedback path, is configured to selectively apply an electric field to the scanned ion beam based on whether the ZFE condition is detected. The selectively applied electric field induces a change in the scanned beam to limit the ZFE condition.
摘要翻译：公开了一种包括扫描元件，光束轮廓仪，分析系统和ZFE限制元件的扫描系统。扫描元件被配置为在离子束扫描路径上扫描离子束。光束轮廓仪在离子束扫描路径上扫描时测量离子束的束电流，分析系统分析测量的束电流以检测ZFE条件。 ZFE限制元件，其在光束轮廓仪的上游并且经由反馈路径耦合到分析系统，被配置为基于是否检测到ZFE条件来选择性地向扫描的离子束施加电场。选择性施加的电场引起扫描光束的变化以限制ZFE条件。

8. 发明申请

WO2012134600A1 IMPROVED UNIFORMITY OF A SCANNED ION BEAM 审中-公开
标题翻译：改善扫描离子束的均匀性
公开(公告)号：WO2012134600A1
公开(公告)日：2012-10-04
申请号：PCT/US2012/000178
申请日：2012-03-29
申请人： AXCELIS TECHNOLOGIES, INC. , EISNER, Edward , RAY, Andy , VANDERBERG, Bo
发明人： EISNER, Edward , RAY, Andy , VANDERBERG, Bo
IPC分类号： H01J37/302 , H01J37/317
CPC分类号： H01J37/3171 , G21K5/02 , G21K5/04 , G21K5/10 , H01J37/302 , H01J2237/30483
摘要： One embodiment relates to an ion implanter. The ion implanter includes an ion source to generate an ion beam, as well as a scanner to scan the ion beam across a surface of a workpiece along a first axis. The ion implanter also includes a deflection filter downstream of the scanner to ditheredly scan the ion beam across the surface of the workpiece along a second axis.
摘要翻译：一个实施例涉及一种离子注入机。离子注入机包括用于产生离子束的离子源以及沿着第一轴沿着工件的表面扫描离子束的扫描仪。离子注入机还包括在扫描器下游的偏转滤波器，以沿着第二轴度将离子束沿工件的表面抖动扫描。

9. 发明申请

WO2008021334A2 THROUGHPUT ENHANCEMENT FOR SCANNED BEAM ION IMPLANTERS 审中-公开
标题翻译：扫描光束离子植入物的强化增强
公开(公告)号：WO2008021334A2
公开(公告)日：2008-02-21
申请号：PCT/US2007/017935
申请日：2007-08-13
申请人： AXCELIS TECHNOLOGIES, INC. , EISNER, Edward , VANDERBERG, Bo
发明人： EISNER, Edward , VANDERBERG, Bo
CPC分类号： H01J37/3171 , H01J37/1474 , H01J37/3023 , H01J2237/30488
摘要： An ion implantation system that optimizes productivity that includes an ion generator configured to implant ions into a workpiece by scanning the ions along an axis in a first direction, a movable stage configured to move the workpiece in a second direction generally orthogonal to the first direction, an ion detection component configured to measure ion dosage at approximately an outer edge of the workpiece, a first direction driver that receives commands from the controller to move in a fast scan speed on wafer or a fast scan speed off wafer and a second direction driver that receives commands from the controller to move the workpiece movable stage in a slow scan speed.
摘要翻译：一种离子植入系统，其优化生产率，其包括离子发生器，其被配置为通过沿着第一方向的轴扫描离子将离子注入到工件中;可移动台，被配置为沿大致垂直于所述第一方向的第二方向移动所述工件，离子检测部件，被配置为测量在工件的大致外边缘处的离子剂量;第一方向驱动器，其接收来自控制器的命令以晶片上的快速扫描速度移动或离开晶片的快速扫描速度;以及第二方向驱动器，从控制器接收命令，以缓慢的扫描速度移动工件移动台。

10. 发明申请

WO2009061485A1 PLASMA ELECTRON FLOOD FOR ION BEAM IMPLANTER 审中-公开
标题翻译：用于离子束植绒的等离子体电子水
公开(公告)号：WO2009061485A1
公开(公告)日：2009-05-14
申请号：PCT/US2008/012599
申请日：2008-11-06
申请人： AXCELIS TECHNOLOGIES, INC , VANDERBERG, Bo , DIVERGILIO, William
发明人： VANDERBERG, Bo , DIVERGILIO, William
IPC分类号： H01J37/077 , H01J3/00 , H01J37/02 , H01J37/317
CPC分类号： H01J37/026 , H01J37/3171 , H01J2237/0041 , H01J2237/06366
摘要： A plasma electron flood system, comprising a housing configured to contain a gas, and comprising an elongated extraction slit, and a cathode and a plurality of anodes residing therein and wherein the elongated extraction slit is in direct communication with an ion implanter, wherein the cathode emits electrons that are drawn to the plurality of anodes through a potential difference therebetween, wherein the electrons are released through the elongated extraction slit as an electron band for use in neutralizing a ribbon ion beam traveling within the ion implanter.
摘要翻译：一种等离子体电子泛洪系统，包括构造成容纳气体的壳体，并且包括细长的提取狭缝以及驻留在其中的阴极和多个阳极，并且其中所述细长的提取狭缝与离子注入机直接连通，其中所述阴极发射通过它们之间的电位差吸引到多个阳极的电子，其中电子通过细长的提取狭缝释放，作为用于中和在离子注入机内行进的带状离子束的电子带。

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