专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2008133796A1 METHOD AND SYSTEM FOR ION BEAM PROFILING 审中-公开
标题翻译：离子光谱分析方法与系统
公开(公告)号：WO2008133796A1
公开(公告)日：2008-11-06
申请号：PCT/US2008/004374
申请日：2008-04-03
申请人： AXCELIS TECHNOLOGIES, INC. , GRAF, Michael , YE, John , VANDERBERG, Bo , CRISTOFORO, Michael , HUANG, Yongzhang
发明人： GRAF, Michael , YE, John , VANDERBERG, Bo , CRISTOFORO, Michael , HUANG, Yongzhang
IPC分类号： H01J37/244 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/244 , H01J37/304 , H01J2237/24405 , H01J2237/2446 , H01J2237/24507 , H01J2237/24542 , H01J2237/24578 , H01J2237/30477
摘要： One embodiment of the invention relates to an apparatus for profiling an ion beam. The apparatus includes a current measuring device having a measurement region, wherein a cross-sectional area of the ion beam enters the measurement region. The apparatus also includes a controller configured to periodically take beam current measurements of the ion beam and to determine a two dimensional profile of the ion beam by relating the beam current measurements to sub-regions within the current measuring device. Other apparatus and methods are also disclosed.
摘要翻译：本发明的一个实施例涉及一种用于对离子束进行成像的装置。该装置包括具有测量区域的电流测量装置，其中离子束的横截面面积进入测量区域。该装置还包括控制器，其被配置为周期性地对离子束进行束电流测量并且通过将束电流测量值与当前测量装置内的子区域相关联来确定离子束的二维轮廓。还公开了其它装置和方法。

2. 发明申请

WO2007143110A3 DOSE CLOSE LOOP CONTROL FOR ION IMPLANTATION 审中-公开
公开(公告)号：WO2007143110A3
公开(公告)日：2007-12-13
申请号：PCT/US2007/012966
申请日：2007-06-01
申请人： AXCELIS TECHNOLOGIES, INC. , HUANG, Yongzhang , YE, John , GRAF, Michael , FREER, Brian , GODFREY, Christopher , SPLINTER, Patrick
发明人： HUANG, Yongzhang , YE, John , GRAF, Michael , FREER, Brian , GODFREY, Christopher , SPLINTER, Patrick
IPC分类号： H01J37/317
摘要： A method derives a terminal return current to adjust and/or compensate for variations in beam current during ion implantation. One or more individual upstream current measurements are obtained from a region of an ion implantation system. A terminal return current, or composite upstream current, is derived from the one or more current measurements. The terminal return current is then employed to adjust scanning or dose of an ion beam in order to facilitate beam current uniformity at a target wafer.

3. 发明申请

WO2007111822A2 A METHOD OF ION BEAM CONTROL FOR GLITCH RECOVERY 审中-公开
标题翻译：一种用于玻璃恢复的离子束控制方法
公开(公告)号：WO2007111822A2
公开(公告)日：2007-10-04
申请号：PCT/US2007/006069
申请日：2007-03-09
申请人： AXCELIS TECHNOLOGIES, INC. , WEIGUO, Que , HUANG, Yongzhang , YE, John , TAO, David , SPLINTER, Patrick
发明人： WEIGUO, Que , HUANG, Yongzhang , YE, John , TAO, David , SPLINTER, Patrick
CPC分类号： H01J37/3171 , H01J37/241 , H01J37/248 , H01J37/304
摘要： The present invention is directed to a circuit and method for quickly quenching an arc that may form between high voltage extraction and/or suppression electrodes associated with an ion source of an ion implantation system to shorten the duration of the arc and mitigate non-uniform ion implantations, for example. The circuit and method also facilitates repainting the ion beam over those areas where an arc was detected to recover any dose loss during such arcing. A high voltage high speed switching circuit is added between each high voltage supply and its respective electrode to quickly extinguish the arc which may otherwise substantially discharge a HV capacitor of the supply and disrupt ion beam current which slowly recovers. The high voltage switch is controlled by a trigger circuit which detects voltage or current changes to each electrode. Protection circuits for the HV switch absorb energy from reactive components and clamp any overvoltages to protect the HV switches.
摘要翻译：本发明涉及用于快速淬灭与离子注入系统的离子源相关的高电压提取和/或抑制电极之间形成的电弧的电路和方法，以缩短电弧的持续时间并减轻非均匀离子植入例如。电路和方法还有助于在检测到电弧的那些区域上再次离子束，以在这种电弧过程中恢复任何剂量损失。在每个高压电源和其各自的电极之间增加一个高电压高速开关电路，以快速熄灭电弧，否则电弧可能会大大放电电源的HV电容器，并破坏缓慢恢复的离子束电流。高压开关由触发电路控制，该触发电路检测每个电极的电压或电流变化。 HV开关的保护电路从无功元件吸收能量，并夹紧任何过电压以保护HV开关。

4. 发明申请

WO2007106395A3 ARC QUENCHING CIRCUIT TO MITIGATE ION BEAM DISRUPTION 审中-公开
公开(公告)号：WO2007106395A3
公开(公告)日：2007-09-20
申请号：PCT/US2007/006073
申请日：2007-03-09
申请人： AXCELIS TECHNOLOGIES, INC. , WEIGUO, Que , HUANG, Yongzhang , YE, John , TAO, David
发明人： WEIGUO, Que , HUANG, Yongzhang , YE, John , TAO, David
IPC分类号： H01J37/248 , H01J37/317 , H02H7/00 , G05F1/569
摘要： The present invention is directed to a circuit (100) for quenching an arc that may form between high voltage extraction or suppression electrodes associated with an ion source (120) of an ion implantation system to mitigate an erratic ion beam current and avoid non-uniform ion implantations, for example. High voltage high speed switching circuits (104) are added in series with the high voltage supplies (102) for the suppression and/or extraction electrodes to extinguish the harmful arcs which may nearly discharge the high voltage capacitors of such HV power supplies, which dramatically affects the ion beam current and takes considerable time thereafter to recover. The high voltage switches are controlled by trigger circuits (108) which detect current or voltages changes in the HV supplies (102) to the electrodes. The arc quenching circuit also comprises protection circuits (110,115) for the HV switches that absorb excess energy from reactive components and clamp any overvoltages to protect the HV switches (104).

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式