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1. 发明申请

WO2008070003A2 HIGH THROUGHPUT SERIAL WAFER HANDLING END STATION 审中-公开
标题翻译：高吞吐量串行晶圆处理终端站
公开(公告)号：WO2008070003A2
公开(公告)日：2008-06-12
申请号：PCT/US2007/024698
申请日：2007-11-30
申请人： AXCELIS TECHNOLOGIES, INC. , FERRARA, Joseph , MITCHELL, Robert
发明人： FERRARA, Joseph , MITCHELL, Robert
IPC分类号： H01L21/00 , H01L21/687
CPC分类号： H01L21/67213 , C23C14/48 , H01L21/67201 , H01L21/67265 , H01L21/67745
摘要： An ion implantation apparatus, system, and method are provided for transferring a plurality of workpieces between vacuum and atmospheric pressures, wherein an alignment mechanism is operable to align a plurality of workpieces for generally simultaneous transportation to a dual-workpiece load lock chamber. The alignment mechanism comprises a characterization device, an elevator, and two vertically-aligned workpiece supports for supporting two workpieces. First and second atmospheric robots are configured to generally simultaneously transfer two workpieces at a time between load lock modules, the alignment mechanism, and a FOUP. Third and fourth vacuum robots are configured to transfer one workpiece at a time between the load lock modules and a process module.
摘要翻译：提供了一种用于在真空和大气压力之间传送多个工件的离子注入设备，系统和方法，其中对齐机构可操作以将多个工件对齐以用于通常同时传送到双重工件加载锁定室。对准机构包括表征装置，升降器和用于支撑两个工件的两个垂直对齐的工件支撑件。第一大气机器人和第二大气机器人被配置为一次同时传送两个工件，在加载锁定模块，对齐机构和FOUP之间。第三台和第四台真空机器人配置为每次在加载锁模块和加工模块之间传送一个工件。

2. 发明申请

WO2018063848A1 INTEGRATED EMISSIVITY SENSOR ALIGNMENT CHARACTERIZATION 审中-公开
标题翻译：集成发射传感器对准特性
公开(公告)号：WO2018063848A1
公开(公告)日：2018-04-05
申请号：PCT/US2017/052139
申请日：2017-09-19
申请人： AXCELIS TECHNOLOGIES, INC.
发明人： BAGGETT, John , FERRARA, Joseph
IPC分类号： H01L21/67 , G01N21/95 , H01L21/68
摘要： A workpiece alignment system has a workpiece support to support a workpiece. A first light emitter directs a first light beam toward the workpiece. A first light receiver receives the first light beam. A rotation device rotates the workpiece support about a support axis. A second light emitter directs a second light beam toward a peripheral region of the workpiece. A second light receiver receives the second light beam concurrent with the rotation of the workpiece. A controller determines a transmissivity of the workpiece based on a total initial emittance of the first light beam a transmission of the first fight beam through the workpiece. The controller determines a position of the workpiece with respect to the support axis based, at least in part, on a rotational position of the workpiece, a portion of the second light beam received, and the determined transmissivity.
摘要翻译：工件对准系统具有支撑工件的工件支撑件。第一光发射器将第一光束导向工件。第一光接收器接收第一光束。旋转装置围绕支撑轴线旋转工件支撑件。第二光发射器将第二光束导向工件的周边区域。第二光接收器在工件旋转的同时接收第二光束。控制器基于第一光束通过工件的传输的第一光束的总初始发射度来确定工件的透射率。控制器至少部分地基于工件的旋转位置，接收的第二光束的一部分以及确定的透射率来确定工件相对于支撑轴的位置。

3. 发明申请

WO2004006283A1 ADJUSTABLE IMPLANTATION ANGLE WORKPIECE SUPPORT STRUCTURE FOR AN ION BEAM IMPLANTER 审中-公开
标题翻译：可调植入角度工件用于离子束植入物的支撑结构
公开(公告)号：WO2004006283A1
公开(公告)日：2004-01-15
申请号：PCT/US2003/021527
申请日：2003-07-10
申请人： AXCELIS TECHNOLOGIES, INC.
发明人： FERRARA, Joseph
IPC分类号： H01J37/317
CPC分类号： H01L21/68764 , H01J37/3171 , H01J2237/20207 , H01J2237/20235
摘要： An ion beam implanter includes an ion beam source for generating an ion beam (14) moving along a beam line and a vacuum or implantation chamber (22) wherein a workpiece (24) is positioned to intersect the ion beam for ion implantation of a surface (25) of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure (100) coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a rotation member (110) rotatably affixed to the implantation chamber. Rotation of the rotation member with respect to the implantation chamber changes an implantation angle (A) of the workpiece with respect to the portion of the ion beam beam line within the implantation chamber. The workpiece support structure further includes a translation member movably (150) coupled to the rotation member and supporting the workpiece for linear movement along a path of travel. The translation member moves along a direction of movement such that a distance that the ion beam moves through the implantation chamber remains constant during movement of the workpiece along its path of travel.
摘要翻译：离子束注入机包括用于产生沿着束线和真空或注入室（22）移动的离子束（14）的离子束源，其中工件（24）定位成与离子束相交以离子注入表面（25）的离子束。离子束注入机还包括耦合到注入室并支撑工件的工件支撑结构（100）。工件支撑结构包括可旋转地固定到植入室的旋转构件（110）。旋转构件相对于注入室的旋转改变了植入物相对于离子束束线的部分的注入角度（A）。工件支撑结构还包括可移动地平移（150）的平移构件，其联接到旋转构件并且支撑工件以沿着行进路径线性移动。平移构件沿着移动方向移动，使得离子束移动通过植入室的距离在工件沿其行进路径移动期间保持恒定。

4. 发明申请

WO2017023583A1 HIGH THROUGHPUT COOLED ION IMPLANTATION SYSTEM AND METHOD 审中-公开
标题翻译：高通量冷却离子植入系统和方法
公开(公告)号：WO2017023583A1
公开(公告)日：2017-02-09
申请号：PCT/US2016/043648
申请日：2016-07-22
申请人： AXCELIS TECHNOLOGIES, INC.
发明人： HUSEINOVIC, Armin , FERRARA, Joseph , TERRY, Brian
IPC分类号： H01J37/317 , H01J37/18 , H01L21/265
CPC分类号： H01J37/20 , H01J37/185 , H01J37/3171 , H01J2237/184 , H01J2237/2001 , H01J2237/31705 , H01L21/26593 , H01L21/67109 , H01L21/67213 , H01L21/6831
摘要： An ion implantation system (100) for implanting ions into a workpiece (118) within a process chamber (122) further comprises a load lock chamber (136), and an isolation chamber (146) coupled to the process chamber with a pre-implant cooling environment defined therein. An isolation gate valve (150) selectively isolates the pre-implant environment from the process environment wherein the isolation chamber comprises a workpiece support (152) for supporting and cooling the workpiece. The isolation gate valve is the only access path for the workpiece to enter and exit the isolation chamber. A pressurized gas source (159) selectively pressurizes the pre-implant cooling environment to a pre-implant cooling pressure that is greater than the process pressure for expeditious cooling of the workpiece. A workpiece transfer arm (164) transfers the workpiece between the various chambers. A controller (166) controls the workpiece transfer arm and selectively cools the workpiece to a pre-implant cooling temperature in the isolation chamber at the pre-implant cooling pressure via a control of the isolation gate valve, pre-implant cooling workpiece support, and pressurized gas source.
摘要翻译：用于将离子注入到处理室（122）内的工件（118）中的离子注入系统（100）还包括负载锁定室（136）和隔离室（146），其与预植入物联接到处理室其中定义的冷却环境。隔离闸阀（150）选择性地将植入前环境与过程环境隔离，其中隔离室包括用于支撑和冷却工件的工件支撑件（152）。隔离闸阀是工件进出隔离室的唯一进入路径。加压气体源（159）选择性地将植入物前冷却环境加压到大于工件压力的预植入物冷却压力，以便于快速冷却工件。工件传送臂（164）在各个室之间传送工件。控制器（166）控制工件传送臂，并且通过隔离闸阀的控制，植入物前冷却工件支撑件，以植入物前冷却压力选择性地将工件冷却到隔离室中的植入前冷却温度，以及加压气源。

5. 发明申请

WO2004012219A1 ADJUSTABLE IMPLANTATION ANGLE WORKPIECE SUPPORT STRUCTURE FOR AN ION BEAM IMPLANTER 审中-公开
标题翻译：可调植入角度工件用于离子束植入物的支撑结构
公开(公告)号：WO2004012219A1
公开(公告)日：2004-02-05
申请号：PCT/US2003/023687
申请日：2003-07-29
申请人： AXCELIS TECHNOLOGIES, INC.
发明人： FERRARA, Joseph
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/20207 , H01J2237/20214 , H01J2237/24528 , H01L21/68764 , H01L21/68771
摘要： An ion beam implanter includes an ion beam source for generating an ion beam (14) moving along a beam line and an implantation chamber wherein a workpiece (24) is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure (100) coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a first rotation member (110) rotatably coupled to the implantation chamber and including an opening (121) extending through the rotation member and aligned with an opening in a wall of the implantation chamber. The workpiece support structure further includes a second rotation member (150) rotatably coupled to the first rotation member and having an axis of rotation offset from an axis of rotation of the first rotation member, the second rotation member overlying the opening of the first rotation member. The workpiece support structure also includes a third member fixedly attached to the second rotation member, the third member including a rotatable drive (200, 204) supporting the workpiece. The first rotation member, the second rotation member and the rotatable drive of the third rotation member rotate to move the workpiece along a path of travel for implantation of the implantation surface wherein a distance that the ion beam moves through the implantation chamber before striking the implantation surface of the workpiece is constant.
摘要翻译：离子束注入机包括用于产生沿着束线移动的离子束（14）的离子束源和注入室，其中工件（24）被定位成与离子束相交，用于离子注入工件的表面离子束。离子束注入机还包括耦合到注入室并支撑工件的工件支撑结构（100）。工件支撑结构包括可旋转地联接到植入室的第一旋转构件（110），并且包括延伸穿过旋转构件并与植入室的壁中的开口对准的开口（121）。所述工件支撑结构还包括可旋转地联接到所述第一旋转构件并具有偏离所述第一旋转构件的旋转轴线的旋转轴线的第二旋转构件，所述第二旋转构件覆盖所述第一旋转构件的开口。工件支撑结构还包括固定地附接到第二旋转构件的第三构件，第三构件包括支撑工件的可旋转驱动器（200,204）。第一旋转构件，第二旋转构件和第三旋转构件的可旋转驱动器旋转以沿着用于注入植入表面的移动路径移动工件，其中在撞击植入之前离子束移动通过注入室的距离工件表面是恒定的。

6. 发明申请

WO2008070004A2 HIGH THROUGHPUT WAFER NOTCH ALIGNER 审中-公开
标题翻译：高通量WAFER NOTCH对准器
公开(公告)号：WO2008070004A2
公开(公告)日：2008-06-12
申请号：PCT/US2007/024699
申请日：2007-11-30
申请人： AXCELIS TECHNOLOGIES, INC. , MITCHELL, Robert , FERRARA, Joseph
发明人： MITCHELL, Robert , FERRARA, Joseph
IPC分类号： H01L21/00 , H01L21/68
CPC分类号： H01L21/681 , H01L21/67265 , H01L21/67745
摘要： An ion implantation apparatus, system, and method are provided for a transferring a plurality of workpieces between vacuum and atmospheric pressures, wherein an alignment mechanism is operable to align a plurality of workpieces for generally simultaneous transportation to a dual-workpiece load lock chamber. The alignment mechanism comprises a characterization device, an elevator, and two vertically-aligned workpiece supports for supporting two workpieces. First and second atmospheric robots are configured to generally simultaneously transfer two workpieces at a time between load lock modules, the alignment mechanism, and a FOUP. Third and fourth vacuum robots are configured to transfer one workpiece at a time between the load lock modules and a process module.
摘要翻译：提供一种用于在真空和大气压之间传送多个工件的离子注入装置，系统和方法，其中对准机构可操作以对准多个工件，以便大体上同时传送到双工件加载锁定室。对准机构包括表征装置，电梯和用于支撑两个工件的两个垂直对齐的工件支撑件。第一和第二大气机器人被配置为一般在负载锁定模块，对准机构和FOUP之间同时传送两个工件。第三和第四真空机器人被配置为在加载锁模块和处理模块之间一次传送一个工件。

7. 发明申请

WO2006041530A3 WORK-PIECE PROCESSING SYSTEM 审中-公开
公开(公告)号：WO2006041530A3
公开(公告)日：2006-04-20
申请号：PCT/US2005/013273
申请日：2005-04-18
申请人： AXCELIS TECHNOLOGIES, INC. , FERRARA, Joseph
发明人： FERRARA, Joseph
IPC分类号： H01L21/00
摘要： A transfer system for use with a tool for processing a work-piece at low or vacuum pressure such as an ion implanter for implanting silicon wafers. An enclosure defines a low pressure region for processing of work-pieces placed at a work-piece processing station within the low pressure region. A two tier multiple work-piece isolation load lock transfers work-pieces from a higher pressure region to the lower pressure for processing and back to said higher pressure subsequent to said processing. A first robot transfers work-pieces within the low pressure region from the load locks to a processing station within the low pressure region. Multiple other robots positioned outside the low pressure region transfers work-pieces to and from the two tier work-piece isolation load locks from a source of said work-pieces prior to processing and to a destination of said work-pieces after said processing.

8. 发明申请

WO2006020643A2 ION BEAM MEASUREMENT SYSTEMS AND METHODS FOR ION IMPLANT DOSE AND UNIFORMITY CONTROL 审中-公开
标题翻译：离子束测量系统和离子植入剂量和均匀性控制的方法
公开(公告)号：WO2006020643A2
公开(公告)日：2006-02-23
申请号：PCT/US2005/028278
申请日：2005-08-08
申请人： AXCELIS TECHNOLOGIES, INC. , PETRY, Klaus , FERRARA, Joseph , BECKER, Klaus
发明人： PETRY, Klaus , FERRARA, Joseph , BECKER, Klaus
CPC分类号： H01J37/3171 , H01J37/20 , H01J37/304 , H01J2237/20207 , H01J2237/20214 , H01J2237/20235 , H01J2237/20242 , H01J2237/24528 , H01J2237/31703
摘要： Dosimetry systems and methods are also presented for measuring a scanned ion beam at a plurality of points along a curvilinear path at a workpiece location in a process chamber. An illustrated dosimetry system comprises a sensor and a mounting apparatus that supports support the sensor and selectively positions the sensor at a plurality of points along the curvilinear path, wherein the mounting apparatus can selectively position the sensor to point toward a vertex of the scanned ion beam.
摘要翻译：还提出了测量系统和方法，用于在处理室中的工件位置处沿着曲线路径的多个点处测量扫描离子束。所示的剂量测定系统包括传感器和安装设备，其支撑传感器并且选择性地将传感器定位在沿着曲线路径的多个点处，其中安装设备可以选择性地将传感器定位成朝向扫描离子束的顶点。

9. 发明申请

WO2018132408A1 ACTIVE WORKPIECE HEATING OR COOLING FOR AN ION IMPLANTATION SYSTEM 审中-公开
公开(公告)号：WO2018132408A1
公开(公告)日：2018-07-19
申请号：PCT/US2018/013068
申请日：2018-01-10
申请人： AXCELIS TECHNOLOGIES, INC.
发明人： FERRARA, Joseph , TERRY, Brian , BAGGETT, John
IPC分类号： H01L21/67
摘要： A heated chuck for an ion implantation system selectively clamps a workpiece to a carrier plate having heaters to selectively heat a clamping surface. A gap between a base plate and carrier plate of the heated chuck contains a heat transfer media. A cooling fluid source is coupled to cooling channels in the base plate. A controller operates the heated chuck in a first mode and second mode. In the first mode, the controller does not activate the heaters and flows the cooling fluid through the cooling channel, where heat is transferred through the heat transfer media and to the cooling fluid. In the second mode, the controller activates the heaters and optionally purges the cooling fluid from the cooling channel or otherwise alters its cooling capacity. A gas can be selectively provided in the gap to further control heat transfer in the first and second modes.

10. 发明申请

WO2015200005A1 HIGH THROUGHPUT HEATED ION IMPLANTATION SYSTEM AND METHOD 审中-公开
标题翻译：高强度加热离子植入系统和方法
公开(公告)号：WO2015200005A1
公开(公告)日：2015-12-30
申请号：PCT/US2015/035512
申请日：2015-06-12
申请人： AXCELIS TECHNOLOGIES, INC.
发明人： HUSEINOVIC, Armin , FERRARA, Joseph , TERRY, Brian
IPC分类号： H01J37/317 , H01J37/18 , H01J37/20 , H01L21/67
CPC分类号： H01L21/67201 , H01J37/185 , H01J37/20 , H01J37/3171 , H01L21/265 , H01L21/67103 , H01L21/67109 , H01L21/67115 , H01L21/67161 , H01L21/67213 , H01L21/67712
摘要： An ion implantation system has an ion implantation apparatus coupled to first and second dual load lock assemblies (136), each having a respective first (138) and second (140) chamber separated by a common wall (146). Each first chamber has a pre-heat apparatus configured to heat a workpiece to a first temperature. Each second chamber has a post-cool apparatus configured to cool the workpiece to a second temperature. A thermal chuck retains the workpiece in a process chamber for ion implantation, and the thermal chuck is configured to heat the workpiece to a third temperature. A pump and vent are in selective fluid communication with the first and second chambers. A controller is configured to heat the workpiece to the first temperature in an atmospheric environment via the pre-heat apparatus, to heat the workpiece to the second temperature via the thermal chuck, to implant ions into the workpiece via the ion implantation apparatus, and to transfer the workpiece between atmospheric and vacuum environments via a control of the pre-heat apparatus, post-cool apparatus, pump, vent, and thermal chuck.
摘要翻译：离子注入系统具有耦合到第一和第二双负载锁定组件（136）的离子注入装置，每个具有由公共壁（146）分隔的相应的第一（138）和第二（140）室。每个第一室具有构造成将工件加热到第一温度的预热装置。每个第二腔室具有后冷却装置，其被配置为将工件冷却至第二温度。热卡盘将工件保持在用于离子注入的处理室中，并且热卡盘构造成将工件加热到第三温度。泵和排气口与第一和第二室选择性地流体连通。控制器被配置为经由预热装置在大气环境中将工件加热到第一温度，以经由热卡盘将工件加热到第二温度，以通过离子注入装置将离子注入工件，并且通过预热装置，后冷却装置，泵，通风口和热卡盘的控制在大气和真空环境之间传送工件。

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